JPH09258246A - Wiring board, method of manufacturing the same, and liquid crystal device including the wiring board - Google Patents
Wiring board, method of manufacturing the same, and liquid crystal device including the wiring boardInfo
- Publication number
- JPH09258246A JPH09258246A JP8066444A JP6644496A JPH09258246A JP H09258246 A JPH09258246 A JP H09258246A JP 8066444 A JP8066444 A JP 8066444A JP 6644496 A JP6644496 A JP 6644496A JP H09258246 A JPH09258246 A JP H09258246A
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- JP
- Japan
- Prior art keywords
- layer
- metal
- wiring board
- wiring
- liquid crystal
- Prior art date
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Abstract
(57)【要約】
【課題】金属配線と基板間の密着性の向上と、金属配線
と透明電極との安定した導通を図れるようにする。
【解決手段】透明電極9の下に形成される金属配線8
を、ガラス基板6上に該基板6と密着性のよい金属から
なる第1の層11と、この第1の層11上に低抵抗の金
属からなる第2の層12と、この第2の層12上に該第
2の層12の酸化を防止する金属からなる第3の層を順
に形成した多層構造としたことにより、金属配線8とガ
ラス基板6間の密着性が向上し、且つ金属配線8と透明
電極9との安定した導通を得ることができる。
(57) Abstract: [PROBLEMS] To improve adhesion between a metal wiring and a substrate and to achieve stable conduction between the metal wiring and a transparent electrode. A metal wiring (8) formed under a transparent electrode (9)
On the glass substrate 6, a first layer 11 made of a metal having good adhesion to the substrate 6, a second layer 12 made of a low-resistance metal on the first layer 11, and a second layer Since the third layer made of a metal for preventing the oxidation of the second layer 12 is sequentially formed on the layer 12, the adhesion between the metal wiring 8 and the glass substrate 6 is improved, and the metal Stable conduction between the wiring 8 and the transparent electrode 9 can be obtained.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、配線基板、特に金
属配線上に透明電極を形成した配線基板、その製造方法
及び該配線基板を備えた液晶素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board, particularly a wiring board having a transparent electrode formed on a metal wiring, a method for manufacturing the wiring board, and a liquid crystal element having the wiring board.
【0002】[0002]
【従来の技術】TN(Twisted Nematic )やSTN(Su
per Twisted Nematic )型等の液晶素子では、従来よ
り、ガラス基板上に形成される透明電極にはITO(In
dium TinOxide )膜が一般に用いられている。2. Description of the Related Art TN (Twisted Nematic) and STN (Sutured Nematic)
In a liquid crystal device such as a per Twisted Nematic (Twisted Nematic) type, a transparent electrode formed on a glass substrate has conventionally been provided with ITO (In).
dium TinOxide) film is commonly used.
【0003】上述した透明電極を構成するITO膜は抵
抗値が高いため、最近のように表示面積の大型化、高精
細化に伴って印加される電圧波形の遅延が問題になって
きた。特に、強誘電性液晶を用いた液晶素子ではセルギ
ャップが1〜3μmとより狭いため、電圧波形の遅延が
顕著であった。また、抵抗値を低くするために透明電極
を厚く形成することも考えられるが、膜厚を厚くすると
成膜に時間を要し、且つコストもかかり、更に透明性も
悪くなる等の問題点があった。Since the above-mentioned ITO film forming the transparent electrode has a high resistance value, the delay of the applied voltage waveform has become a problem with the recent increase in the display area and the definition. In particular, the liquid crystal element using the ferroelectric liquid crystal has a narrow cell gap of 1 to 3 μm, so that the delay of the voltage waveform is remarkable. It is also possible to form a thick transparent electrode in order to reduce the resistance value, but if the film thickness is made thick, it takes time to form the film, the cost is high, and the transparency is deteriorated. there were.
【0004】このような問題点を解決するために、膜厚
の薄い透明電極に併設して低抵抗値の金属配線を形成す
る構成の電極基板が提案されている(例えば、特開平2
−63019号公報)。この公報に開示されている電極
基板は、金属配線を透明な絶縁物で埋め込み、表面に金
属パターンを露出した金属配線上に、ITO膜等の透明
電極を形成したものである。In order to solve such a problem, an electrode substrate has been proposed in which a transparent electrode having a small film thickness is provided side by side to form a metal wiring having a low resistance value (for example, Japanese Unexamined Patent Publication No. HEI-2)
-63019). The electrode substrate disclosed in this publication is one in which a metal wiring is embedded with a transparent insulator, and a transparent electrode such as an ITO film is formed on the metal wiring having a metal pattern exposed on the surface.
【0005】上述したような構成の電極基板を作製する
場合、金属配線間を埋めて平坦化する絶縁物として透明
な樹脂を用いる構成の電極基板が提案されている(例え
ば、特開平6−347810号公報)。When manufacturing an electrode substrate having the above-mentioned structure, an electrode substrate having a structure in which a transparent resin is used as an insulating material for filling and flattening between metal wirings has been proposed (for example, JP-A-6-347810). Issue).
【0006】このような低抵抗率の金属配線を、透明電
極を構成する下地のガラス基板に形成して電極基板(配
線基板)を作製する場合、従来、例えば図10乃至図1
1に示すような製造方法によって行われていた。When an electrode substrate (wiring substrate) is manufactured by forming such a low-resistivity metal wiring on a base glass substrate which constitutes a transparent electrode, conventionally, for example, FIGS.
The manufacturing method as shown in FIG.
【0007】先ず、平滑な透明な型板101の表面上
に、UV(紫外線)硬化樹脂102を定量化治具(図示
省略)で所定量滴下する(図10(a)参照)。次に、
UV硬化樹脂102が滴下された型板101上に、予め
1μm程度の膜厚からなる金属配線103が形成された
ガラス基板104を、金属配線103を型板101に向
けてUV硬化樹脂102を挟むように接触させる(図1
0(b)参照)。金属配線103は、例えばスパッタ法
等によってガラス基板104上に銅等の金属膜層を形成
した後、フォトリソ法によりパターンニングして形成す
ることができる。次に、型板101とガラス基板104
とでUV硬化樹脂102を挟んだ一対物をプレス機10
5内に入れ、加圧して型板101とガラス基板104を
密着させる(図11(a)参照)。この時、後の工程で
ITO膜等の透明電極と金属配線103が接触して導通
性を保つようにするため、UV硬化樹脂102を金属配
線103の表面上から除去するか、又は極薄く樹脂が残
る程度になるように、型板101とガラス基板104と
を強く、且つ基板全面に均一に密着させる。First, a predetermined amount of UV (ultraviolet) curing resin 102 is dropped on a smooth transparent template 101 surface by a quantifying jig (not shown) (see FIG. 10A). next,
A glass substrate 104 on which metal wiring 103 having a film thickness of about 1 μm is previously formed is placed on a template 101 on which the UV curing resin 102 is dropped, and the UV curing resin 102 is sandwiched with the metal wiring 103 facing the template 101. Contact (Fig. 1
0 (b)). The metal wiring 103 can be formed, for example, by forming a metal film layer of copper or the like on the glass substrate 104 by a sputtering method or the like and then patterning by a photolithography method. Next, the template 101 and the glass substrate 104
A pair of objects sandwiching the UV curable resin 102 with the press machine 10
5 and pressurize the template 101 and the glass substrate 104 into close contact (see FIG. 11A). At this time, the UV curing resin 102 is removed from the surface of the metal wiring 103 or an extremely thin resin is used so that the transparent electrode such as an ITO film and the metal wiring 103 contact with each other in a later step to maintain the electrical conductivity. The template 101 and the glass substrate 104 are strongly and uniformly adhered to the entire surface of the substrate so that the remaining amount remains.
【0008】次に、このUV硬化樹脂102を硬化させ
るために、型板101とガラス基板104の一体物をプ
レス機105内から取り出し、型板101側からUV
(紫外線)光106を照射してUV硬化樹脂102を硬
化させる(図11(b)参照)。Next, in order to cure the UV curable resin 102, an integrated product of the template 101 and the glass substrate 104 is taken out from the press machine 105 and UV is applied from the template 101 side.
The (UV) light 106 is irradiated to cure the UV curable resin 102 (see FIG. 11B).
【0009】次に、離型治具(図示省略)により型板1
01からガラス基板104とUV硬化樹脂102の一体
物を剥離し(図11(c),(d)参照)、UV硬化樹
脂102上に金属配線103と電気的に接するようにし
てITO膜からなる透明電極107を形成して、UV硬
化樹脂102を埋め込んだ電極基板(配線基板)100
を得ていた(図11(e)参照)。Next, the template 1 is removed by a releasing jig (not shown).
The glass substrate 104 and the UV curable resin 102 are separated from 01 (see FIGS. 11C and 11D), and an ITO film is formed on the UV curable resin 102 so as to make electrical contact with the metal wiring 103. An electrode substrate (wiring substrate) 100 in which a transparent electrode 107 is formed and a UV curable resin 102 is embedded.
Was obtained (see FIG. 11 (e)).
【0010】[0010]
【発明が解決しようとする課題】ところで、上述した従
来の製造方法によって作製される電極基板(配線基板)
100では、金属配線103の金属として、体積抵抗値
が2〜10×10-8Ωmと最も小さいCu(銅)が一般
的に用いられている。銅で形成した金属配線103は、
他の金属を用いた場合に比べて膜厚を薄く設定でき、且
つ材料費が安価なことから最も経済的である。By the way, an electrode substrate (wiring substrate) manufactured by the above-described conventional manufacturing method.
In 100, Cu (copper), which has the smallest volume resistance value of 2 to 10 × 10 −8 Ωm, is generally used as the metal of the metal wiring 103. The metal wiring 103 made of copper is
It is the most economical because the film thickness can be set thinner and the material cost is lower than when other metals are used.
【0011】しかしながら、銅を金属配線103として
用いた場合、銅で形成された金属配線103はガラス基
板104との密着力が小さいために、図11(c),
(d)に示した離型工程において、離型治具(図示省
略)により型板101からガラス基板104とUV硬化
樹脂102の一体物を剥離する際に、ガラス基板104
から金属配線103が剥離する恐れがあり、得られる電
極基板(配線基板)100の歩留りが大幅に低下すると
いう問題点があった。However, when copper is used as the metal wiring 103, the metal wiring 103 made of copper has a small adhesion to the glass substrate 104, and therefore, FIG.
In the releasing step shown in (d), the glass substrate 104 is removed when the integrated body of the glass substrate 104 and the UV curable resin 102 is released from the template 101 by a releasing jig (not shown).
Therefore, the metal wiring 103 may be peeled off, and the yield of the obtained electrode substrate (wiring substrate) 100 may be significantly reduced.
【0012】また、金属配線103を形成する銅は酸化
しやすい金属であり、図11(e)に示した工程でIT
O膜等の透明電極107を金属配線103上に形成する
際に、金属配線103を形成する銅の表面酸化により、
透明電極との安定した電気的導通が得られなくなる問題
点があった。Further, the copper forming the metal wiring 103 is a metal that is easily oxidized, and IT is used in the step shown in FIG.
When the transparent electrode 107 such as an O film is formed on the metal wiring 103, by the surface oxidation of copper forming the metal wiring 103,
There is a problem that stable electrical conduction with the transparent electrode cannot be obtained.
【0013】そこで、本発明は、金属配線とこの金属配
線を表面に形成する基板との密着性の向上と、金属配線
とその上に形成する透明電極との安定した導通を図るこ
とができる配線基板、その製造方法及び該配線基板を備
えた液晶素子を提供することを目的とする。In view of the above, the present invention is a wiring which can improve the adhesion between the metal wiring and the substrate on which the metal wiring is formed, and can achieve stable conduction between the metal wiring and the transparent electrode formed thereon. An object of the present invention is to provide a substrate, a method for manufacturing the substrate, and a liquid crystal device including the wiring substrate.
【0014】[0014]
【課題を解決するための手段】上記のような問題を解決
するために、基板表面に配線パターンされた金属配線
と、前記金属配線の間に該金属配線とほぼ同じ厚さで充
填された樹脂と、前記樹脂上に前記金属配線と電気的に
接するようにして形成された透明電極と、を有する配線
基板において、前記金属配線を、前記基板上に該基板と
密着性のよい金属からなる第1の層と、前記第1の層上
に低抵抗の金属からなる第2の層と、前記第2の層上に
該第2の層の酸化を防止する金属からなる第3の層を順
に形成して多層構造としたことを特徴としている。In order to solve the above problems, a metal wiring having a wiring pattern on a surface of a substrate and a resin filled between the metal wiring with substantially the same thickness as the metal wiring. And a transparent electrode formed on the resin so as to be in electrical contact with the metal wiring, wherein the metal wiring is made of a metal having good adhesion to the substrate. A first layer, a second layer made of a low resistance metal on the first layer, and a third layer made of a metal for preventing the oxidation of the second layer on the second layer in this order. It is characterized in that it is formed into a multilayer structure.
【0015】また、基板上に金属配線を形成する第1の
工程と、前記金属配線の間に樹脂を充填する第2の工程
と、前記樹脂に光を照射して硬化させる第3の工程と、
前記樹脂上に前記金属配線と電気的に接するようにして
前記透明電極を形成する第4の工程と、を有する配線基
板の製造方法において、前記第1の工程で、前記基板上
に該基板と密着性のよい金属からなる第1の層を形成し
て、前記第1の層上に低抵抗の金属からなる第2の層
し、更に、前記第2の層上に該第2の層の酸化を防止す
る金属からなる第3の層を形成して多層構造の前記金属
配線を形成することを特徴としている。Also, a first step of forming metal wiring on the substrate, a second step of filling a resin between the metal wirings, and a third step of irradiating the resin with light to cure the resin. ,
A fourth step of forming the transparent electrode on the resin so as to make electrical contact with the metal wiring, in the first step, the substrate is formed on the substrate in the first step. A first layer made of a metal having good adhesion is formed, a second layer made of a low-resistance metal is formed on the first layer, and a second layer made of the second layer is formed on the second layer. It is characterized in that the metal wiring having a multi-layered structure is formed by forming a third layer made of a metal for preventing oxidation.
【0016】また、互いに対向するように配置された一
対の電極基板の間に液晶を挟持してなる液晶素子におい
て、少なくとも一方の前記電極基板は、基板と、前記基
板表面に配線パターンされた金属配線と、前記金属配線
の間に該金属配線とほぼ同じ厚さに充填された樹脂と、
前記樹脂上に前記金属配線と電気的に接するようにして
形成された透明電極と、からなり、前記金属配線を、前
記基板上に該基板と密着性のよい金属からなる第1の層
と、前記第1の層上に低抵抗の金属からなる第2の層
と、前記第2の層上に該第2の層の酸化を防止する金属
からなる第3の層を順に形成して多層構造としたことを
特徴としている。Further, in a liquid crystal element in which a liquid crystal is sandwiched between a pair of electrode substrates arranged to face each other, at least one of the electrode substrates is a substrate and a metal having a wiring pattern on the substrate surface. A wire and a resin filled between the metal wires to have substantially the same thickness as the metal wires;
A transparent electrode formed on the resin so as to be in electrical contact with the metal wiring, the metal wiring on the substrate, a first layer made of a metal having good adhesion to the substrate, A multi-layer structure in which a second layer made of a low resistance metal and a third layer made of a metal for preventing the oxidation of the second layer are sequentially formed on the first layer and the second layer. It is characterized by
【0017】[0017]
【発明の実施の形態】以下、図面に基づいて本発明の実
施の形態を説明する。Embodiments of the present invention will be described below with reference to the drawings.
【0018】図1は、本発明の第1の実施の形態に係る
配線基板を備えた液晶素子を示す概略断面図である。こ
の液晶素子1は、偏光板2a,2b間に対向して配置さ
れた一対の配線基板である電極基板3a,3bを備えて
おり、電極基板3a,3bは、径が均一な粒状のスペー
サ4により所定のセルギャップ(例えば、1.5μm)
で貼り付けられており、その間に電界に対して双安定性
を有する強誘電性液晶であるカイラルスメクティック液
晶5が注入され、シール部材(図示省略)によって封止
されている。FIG. 1 is a schematic sectional view showing a liquid crystal element provided with a wiring board according to a first embodiment of the present invention. The liquid crystal element 1 is provided with electrode substrates 3a and 3b, which are a pair of wiring substrates arranged facing each other between the polarizing plates 2a and 2b, and the electrode substrates 3a and 3b are granular spacers 4 having a uniform diameter. A predetermined cell gap (for example, 1.5 μm)
A chiral smectic liquid crystal 5 which is a ferroelectric liquid crystal having bistability against an electric field is injected between them and sealed by a seal member (not shown).
【0019】電極基板(配線基板)3a,3bは、ガラ
ス基板6a,6bと、ガラス基板6a,6b上で絶縁膜
であるUV(紫外線)硬化樹脂7(電極基板3b側は図
示されていない)内に埋め込まれている3層構造の金属
配線8a,8bと、金属配線8a,8b上に形成されて
金属配線8a,8bと電気的に接しているITO膜から
なる透明電極9a,9bとでそれぞれ構成されている。
透明電極9a,9b上には、配向膜10a,10bがそ
れぞれ形成されている。The electrode substrates (wiring substrates) 3a and 3b are glass substrates 6a and 6b, and UV (ultraviolet) curing resin 7 which is an insulating film on the glass substrates 6a and 6b (the electrode substrate 3b side is not shown). The metal wirings 8a and 8b having a three-layer structure embedded therein and the transparent electrodes 9a and 9b formed of the ITO film and formed on the metal wirings 8a and 8b and in electrical contact with the metal wirings 8a and 8b. Each is configured.
Alignment films 10a and 10b are formed on the transparent electrodes 9a and 9b, respectively.
【0020】各電極基板3a,3bの金属配線8a,8
b、透明電極9a,9bは、ストライプ状にそれぞれ形
成されて単純マトリクス配置され、その交差部で画素が
形成されている。Metal wiring 8a, 8 of each electrode substrate 3a, 3b
b and the transparent electrodes 9a and 9b are respectively formed in stripes and arranged in a simple matrix, and pixels are formed at the intersections thereof.
【0021】ガラス基板6a,6bは、液晶基板用とし
てよく用いられる厚さが1mm程度で、材質はソーダガ
ラス(青板ガラス)のような一般的なものでよく、両面
を研磨した平行度のよいものが好ましい。The glass substrates 6a and 6b have a thickness of about 1 mm, which is often used for liquid crystal substrates, and may be made of a common material such as soda glass (blue plate glass), and both surfaces are polished to have a high degree of parallelism. Those are preferable.
【0022】UV硬化樹脂7は、UV硬化型樹脂モノマ
ー、オリゴマー及び光開始剤の混合物であり、アクリル
系、エポキシ系、エン・チオール系等のいかなる重合方
式の物でもよいが、電極基板作製工程であるITOスパ
ッタ成膜工程や配向膜焼成工程に耐えうる耐熱性、耐薬
品性、耐洗浄性を備えていることが必要である。例え
ば、主成分である反応性オリゴマーに耐熱性のある分子
構造を導入したものや、多官能モノマーにより架橋密度
を高めたものが好ましい。The UV curable resin 7 is a mixture of UV curable resin monomers, oligomers and photoinitiators, and may be of any polymerization type such as acryl type, epoxy type, ene / thiol type, etc. It is necessary to have heat resistance, chemical resistance, and cleaning resistance that can withstand the ITO sputter film forming process and the alignment film baking process. For example, those obtained by introducing a heat-resistant molecular structure into the reactive oligomer which is the main component, and those obtained by increasing the crosslink density by a polyfunctional monomer are preferable.
【0023】尚、UV硬化樹脂7にはUV(紫外線)光
が照射されるが、UV硬化樹脂以外にも、例えば可視光
や赤外線光等の照射によって硬化する樹脂を用いること
もできる。The UV curable resin 7 is irradiated with UV (ultraviolet) light. However, other than the UV curable resin, it is possible to use a resin which is cured by irradiation with visible light or infrared light.
【0024】金属配線8a,8bは、それぞれガラス基
板6a,6b上に形成される下地層11a,11b、そ
の上に低抵抗金属層12a,12b、更にその上に保護
層13a,13bを形成した3層構造で構成されてい
る。The metal wirings 8a and 8b have underlying layers 11a and 11b formed on the glass substrates 6a and 6b, low resistance metal layers 12a and 12b formed thereon, and protective layers 13a and 13b formed thereon. It has a three-layer structure.
【0025】下地層11a,11bとしては、例えばT
i(チタン),Mo(モリブデン),W(タングステ
ン),Al(アルミニウム),Ta(タンタル),Ni
(ニッケル)等のガラス基板6a,6bとの密着性のよ
い金属、あるいはそれらの合金からなる薄膜が好適に用
いられる。また、低抵抗金属層12a,12bとして
は、例えば低抵抗のCu(銅)からなる薄膜が好適に用
いられる。また、保護層13a,13bとしては、例え
ばMo(モリブデン),Ta(タンタル),W(タング
ステン),Ti(チタン)等の高融点金属、あるいはそ
れらの合金からなる酸化防止膜として機能する薄膜が好
適に用いられる。As the underlayers 11a and 11b, for example, T
i (titanium), Mo (molybdenum), W (tungsten), Al (aluminum), Ta (tantalum), Ni
A thin film made of a metal such as (nickel) having good adhesion to the glass substrates 6a and 6b, or an alloy thereof is preferably used. Further, as the low resistance metal layers 12a and 12b, for example, thin films made of low resistance Cu (copper) are preferably used. Further, as the protective layers 13a and 13b, for example, a high melting point metal such as Mo (molybdenum), Ta (tantalum), W (tungsten), Ti (titanium), or a thin film functioning as an antioxidant film made of an alloy thereof is used. It is preferably used.
【0026】次に、上述した液晶素子1の電極基板3
a,3bに適用される本実施の形態に係る配線基板の製
造方法を、図2乃至図4を参照して説明する。Next, the electrode substrate 3 of the liquid crystal element 1 described above
A method of manufacturing the wiring board according to the present embodiment applied to a and 3b will be described with reference to FIGS.
【0027】先ず、例えば寸法300×310mmで厚
さ1.1mmの両面研磨された透明なガラス基板6上の
全面に、例えばスパッタ法によりガラス基板6との密着
性のよいMo(モリブデン)を500Å程度の膜厚で成
膜して下地層11を形成した後、その上に、例えばスパ
ッタ法により低抵抗のCu(銅)を1μm程度の膜厚で
成膜して低抵抗金属層12を形成し、更にその上に、例
えばスパッタ法により酸化防止膜として機能するTa
(タンタル)を500Å程度の膜厚で成膜して保護層1
3を形成した(図2(a)参照)。First, for example, 500 liters of Mo (molybdenum) having good adhesion to the glass substrate 6 is sputtered on the entire surface of the transparent glass substrate 6 having a size of 300 × 310 mm and a thickness of 1.1 mm and polished on both sides. After forming the underlayer 11 with a film thickness of about 1 μm, a low resistance Cu (copper) film with a film thickness of about 1 μm is formed thereon by, for example, a sputtering method to form the low resistance metal layer 12. On top of that, Ta which functions as an antioxidant film is formed by, for example, a sputtering method.
(Tantalum) is deposited to a thickness of about 500Å to form a protective layer 1
3 was formed (see FIG. 2 (a)).
【0028】次に、フォトリソグラフィー法によって、
この保護層13上にフォトレジスト(図示省略)をスピ
ンコート法により2μm程度の膜厚で全面塗布してプリ
ベークし、所望パターンのフォトマスク(図示省略)を
用いて露光装置(例えば、キヤノン(株)社製、商品
名:MPA−1500)により、例えば80mmJ/c
m2 のエネルギーで露光し、フォトマスク(図示省略)
を現像、ポストベークしてフォトレジストパターン(図
示省略)を形成した後、エッチング液によりエッチング
処理を施して、ガラス基板6上に、例えば幅20μmで
ピッチ320μmのストライプ形状の下地層11、低抵
抗金属層12、保護層13の3層からなる金属配線8を
パターンニングした(図2(b)参照)。Next, by the photolithography method,
A photoresist (not shown) is applied to the entire surface of the protective layer 13 by a spin coating method so as to have a thickness of about 2 μm, prebaked, and a photomask (not shown) having a desired pattern is used to expose an exposure device (for example, Canon ) Manufactured by the company, trade name: MPA-1500), for example, 80 mmJ / c
Exposure with m 2 energy, photomask (not shown)
Is developed and post-baked to form a photoresist pattern (not shown), which is then subjected to etching treatment with an etching solution to form a stripe-shaped base layer 11 having a width of 20 μm and a pitch of 320 μm on the glass substrate 6, and a low resistance. The metal wiring 8 composed of three layers of the metal layer 12 and the protective layer 13 was patterned (see FIG. 2B).
【0029】次に、平滑で透明な型板14の表面上に、
UV(紫外線)硬化樹脂(例えば、ペンタエリスリトー
ルトリアクリレート50重量部、ネオペンチルグリコー
ルジアクリレート50重量部、1−ヒドロキシシクロヘ
キシルフェニルケトン2重量部からなる樹脂)7を定量
化治具(図示省略)で所定量滴下し(図2(c)参
照)、このUV硬化樹脂7が滴下された型板14に、図
2(b)で示した金属配線8が形成されたガラス基板6
を、金属配線8側を型板14に向けてUV硬化樹脂7を
挟むように接触させる(図2(d)参照)。Next, on the surface of the smooth and transparent template 14,
A UV (ultraviolet) curing resin (for example, a resin consisting of 50 parts by weight of pentaerythritol triacrylate, 50 parts by weight of neopentyl glycol diacrylate, and 2 parts by weight of 1-hydroxycyclohexyl phenyl ketone) 7 is quantified with a jig (not shown). A predetermined amount is dropped (see FIG. 2C), and the glass substrate 6 having the metal wiring 8 shown in FIG. 2B formed on the template 14 on which the UV curable resin 7 is dropped.
With the metal wiring 8 side facing the template 14 so as to sandwich the UV curable resin 7 (see FIG. 2D).
【0030】次に、UV硬化樹脂7を挟んだガラス基板
6と型板14の一体物に対して、プレス機15で上下か
ら例えば1分間かけて所定の圧力(例えば、プレス圧3
トン)を加えて全面にわたって密着させる(図3(a)
参照)。この時、後の工程でITO膜等の透明電極と金
属配線8が接触して導通性を保つようにするため、UV
硬化樹脂7を金属配線8の表面上から除去するか、又は
極薄く樹脂が残る程度になるように、型板14とガラス
基板6とを強く、且つ基板全面に均一に密着させる。Next, a predetermined pressure (for example, pressing pressure 3
Tons) to bring them into close contact with each other (FIG. 3 (a))
reference). At this time, in order to keep the transparent electrode such as an ITO film and the metal wiring 8 in contact with each other in a later process to maintain the conductivity, UV
The cured resin 7 is removed from the surface of the metal wiring 8, or the template 14 and the glass substrate 6 are strongly and uniformly adhered to the entire surface of the substrate so that the resin remains in an extremely thin thickness.
【0031】その後(例えば、約10分後)、プレス機
15から取り外したガラス基板6と型板14の一体物に
対し、型板14側からUV光(例えば、100wの高圧
水銀ランプ4本で構成された紫外線ランプから照射され
るUV光)16を照射してUV硬化樹脂7を硬化させる
(図3(b)参照)。After that (for example, after about 10 minutes), UV light (for example, four 100 w high-pressure mercury lamps) was applied to the integrated glass substrate 6 and template 14 removed from the press 15 from the template 14 side. The UV curing resin 7 is cured by irradiating the UV light 16 emitted from the configured ultraviolet lamp (see FIG. 3B).
【0032】尚、UV硬化樹脂7を加圧するプレス機1
4としては、例えば、油圧シリンダーやエアーシリンダ
ーによるプレス機、ロールプレス機等を用いることがで
きる。また、プレス機14で加圧する際に、電熱ヒータ
又は加熱流体等に通して加熱しておくことにより、UV
硬化樹脂7の粘土が低下してガラス基板6上に良好に広
がる。The press 1 for pressing the UV curable resin 7
As 4, a press machine using a hydraulic cylinder or an air cylinder, a roll press machine, or the like can be used. In addition, when pressure is applied by the press machine 14, UV is applied by heating through an electric heater or a heating fluid.
The clay of the cured resin 7 decreases and spreads well on the glass substrate 6.
【0033】次に、離型治具(図示省略)により型板1
4からガラス基板6とUV硬化樹脂7の一体物を剥離し
(図3(c),(d)参照)、UV硬化樹脂7上に金属
配線8と電気的に接するように金属配線8の配線パター
ンに合わせて、例えば幅300μmのITO膜からなる
透明電極9をスパッタ形成してパターンニングし、その
上に配向膜(図示省略)を形成して、配線基板(図1の
液晶素子1の電極基板3a,3bに相当している)3を
得た(図4参照)。Next, the template 1 is released by a releasing jig (not shown).
The glass substrate 6 and the UV curable resin 7 are separated from the glass substrate 4 (see FIGS. 3C and 3D), and the metal wiring 8 is electrically connected to the UV curable resin 7 so that the metal wiring 8 is electrically connected to the metal wiring 8. A transparent electrode 9 made of, for example, an ITO film having a width of 300 μm is formed by sputtering in accordance with the pattern and patterned, and an alignment film (not shown) is formed on the transparent electrode 9, and a wiring substrate (electrode of the liquid crystal element 1 of FIG. 1 is formed. 3 (corresponding to the substrates 3a and 3b) was obtained (see FIG. 4).
【0034】そして、この配線基板3を2枚作製して対
向配置し、1.5μm程度のセルギャップで貼り合わせ
てその間にカイラルスメクティック液晶を注入すること
によって、図1に示した液晶素子1を得た。Then, two of these wiring boards 3 are prepared and arranged so as to face each other, and they are bonded together with a cell gap of about 1.5 μm, and a chiral smectic liquid crystal is injected between them, whereby the liquid crystal element 1 shown in FIG. 1 is obtained. Obtained.
【0035】このように、本実施の形態では、金属配線
8を下地層11、低抵抗金属層12、保護層13の3層
とし、ガラス基板6の表面にガラス基板6と密着性のよ
い下地層(本実施の形態ではMo(モリブデン)膜)1
1を形成し、中間層の低抵抗金属層(本実施の形態では
Cu(銅)膜)12上に酸化防止膜として機能する保護
層(本実施の形態ではTa(タンタル)膜)13を形成
した構造により、図3(c),(d)に示した離型工程
において、離型治具(図示省略)により型板14からガ
ラス基板6とUV硬化樹脂7の一体物を剥離する際に、
ガラス基板6と金属配線8の下地層11との剥離が抑制
されて、歩留りの大幅な向上を図ることができた。As described above, in this embodiment, the metal wiring 8 has three layers of the underlayer 11, the low-resistance metal layer 12, and the protective layer 13, and the lower surface of the glass substrate 6 having good adhesion to the glass substrate 6. Strata (Mo (molybdenum) film in this embodiment) 1
1 is formed, and a protective layer (Ta (tantalum) film in this embodiment) 13 functioning as an antioxidant film is formed on the low resistance metal layer (Cu (copper) film in this embodiment) 12 of the intermediate layer. With this structure, when the glass substrate 6 and the UV curable resin 7 are separated from the template 14 by a releasing jig (not shown) in the releasing step shown in FIGS. 3C and 3D. ,
Peeling between the glass substrate 6 and the underlying layer 11 of the metal wiring 8 was suppressed, and the yield could be significantly improved.
【0036】更に、金属配線8の低抵抗金属層12上に
酸化防止膜として機能する保護層13を形成したことに
より、金属配線8と透明電極9との安定した導通を得る
ことができた。Further, by forming the protective layer 13 functioning as an antioxidant film on the low resistance metal layer 12 of the metal wiring 8, stable conduction between the metal wiring 8 and the transparent electrode 9 can be obtained.
【0037】また、この金属配線8を有する配線基板
(図1の液晶素子1の電極基板3a,3bに相当してい
る)3を備えた液晶素子1は、ガラス基板6a,6bと
金属配線8a,8bの剥離が抑制され、且つ金属配線8
a,8bと透明電極9a,9bとが安定して導通するこ
とにより、高品位な表示を行うことができる。Further, the liquid crystal element 1 provided with the wiring substrate 3 (corresponding to the electrode substrates 3a and 3b of the liquid crystal element 1 in FIG. 1) having the metal wiring 8 has the glass substrates 6a and 6b and the metal wiring 8a. , 8b are suppressed from being peeled off, and the metal wiring 8
Since a and 8b and the transparent electrodes 9a and 9b are stably conducted, high-quality display can be performed.
【0038】また、この液晶素子1は、透明電極9a,
9bの下に金属配線8a,8bが併設される構成によ
り、電極の抵抗値が小さくなることによって、強誘電性
液晶(本実施の形態ではカイラルスメクティック液晶)
を用いていても電圧波形の遅延を低減することができ
る。Further, this liquid crystal element 1 has a transparent electrode 9a,
Due to the structure in which the metal wirings 8a and 8b are provided underneath 9b, the resistance value of the electrode is reduced, so that the ferroelectric liquid crystal (chiral smectic liquid crystal in this embodiment) is formed.
The delay of the voltage waveform can be reduced even by using.
【0039】更に、この液晶素子1は、金属配線8a,
8bの併設により透明電極9a,9bの膜厚を厚くする
必要がないので、透明電極9a,9bの透過率が下がっ
てこの透明電極9a,9bが認識されることはない。Further, this liquid crystal element 1 has metal wiring 8a,
Since it is not necessary to increase the film thickness of the transparent electrodes 9a and 9b due to the provision of the 8b, the transparent electrodes 9a and 9b are not perceived and the transparent electrodes 9a and 9b are not recognized.
【0040】また、上述した実施の形態との比較のため
に、金属配線8の保護層13をTa(タンタル)の代わ
りにAl(アルミニウム)で形成したところ、その上の
透明電極9との間で導通不良の配線が確認された。これ
は、Al(アルミニウム)が酸化して表面にAl2 O3
の不導体膜が形成されたことによるものと考えられる。For comparison with the above-described embodiment, when the protective layer 13 of the metal wiring 8 is formed of Al (aluminum) instead of Ta (tantalum), the protective layer 13 is formed between the protective layer 13 and the transparent electrode 9 on the protective layer 13. A wiring with poor continuity was confirmed at. This is because Al (aluminum) is oxidized and Al 2 O 3 appears on the surface.
It is considered that this is due to the formation of the non-conductive film.
【0041】また、Au(金)やPt(白金)等の酸化
しない金属を保護層13として用いた場合、Au(金)
は低抵抗金属層(本実施の形態ではCu(銅)膜)12
と密着性に難があり、また、Au(金)及びPt(白
金)はパターンニングの際に特殊なエッチャントを用い
らければならず、エッチング工程が複雑になり効率的で
ない。When a non-oxidizing metal such as Au (gold) or Pt (platinum) is used as the protective layer 13, Au (gold)
Is a low resistance metal layer (Cu (copper) film in this embodiment) 12
Adhesion is difficult, and Au (gold) and Pt (platinum) require a special etchant for patterning, which complicates the etching process and is not efficient.
【0042】更に、Cr(クロム)を下地層11及び保
護層13として用いた場合、Cr(クロム)はパターン
ニングの際に発生するエッチング廃液が有毒であるため
に、特別な廃液処理装置を必要とし、コストが高くな
る。Further, when Cr (chrome) is used as the underlayer 11 and the protective layer 13, Cr (chrome) requires a special waste liquid treatment device because the etching waste liquid generated during patterning is toxic. And, the cost becomes high.
【0043】以上のことから、下地層11に用いる金属
としては、上述したようにMo(モリブデン),Ti
(チタン),W(タングステン),Al(アルミニウ
ム),Ta(タンタル),Ni(ニッケル)、あるいは
それらの合金が適しており、保護層13に用いる金属と
しては、上述したようにTa(タンタル),Mo(モリ
ブデン),W(タングステン),Ti(チタン)、ある
いはそれらの合金が適している。From the above, the metals used for the underlayer 11 are Mo (molybdenum) and Ti as described above.
(Titanium), W (tungsten), Al (aluminum), Ta (tantalum), Ni (nickel), or alloys thereof are suitable, and the metal used for the protective layer 13 is Ta (tantalum) as described above. , Mo (molybdenum), W (tungsten), Ti (titanium), or alloys thereof are suitable.
【0044】図5(a),(b)は、本発明の第2の実
施の形態に係る上述した液晶素子1の電極基板3a,3
bに適用される配線基板を模式的に示したものである。FIGS. 5 (a) and 5 (b) show the electrode substrates 3a, 3 of the above-described liquid crystal element 1 according to the second embodiment of the present invention.
3 is a schematic view of a wiring board applied to b.
【0045】本実施の形態では、図5(a)に示すよう
に、例えば寸法300×310mmで厚さ1.1mmの
両面研磨された透明なガラス基板6上の全面に、例えば
スパッタ法によりガラス基板6との密着性のよい金属
(例えば、Mo)を500Å程度の膜厚で成膜して下地
層11を形成し、その上に、下地層11の金属(例え
ば、Mo)と、下地層11上に形成される低抵抗金属層
12の金属(例えば、Cu)とを例えばスパッタ法によ
り同時にスパッタリングを行い、500Å程度の膜厚で
第1のミキシング層17を成膜した後、この第1のミキ
シング層17上に、例えばスパッタ法により低抵抗の金
属(例えば、Cu)を1μm程度の膜厚で成膜して低抵
抗金属層12を形成する。In this embodiment, as shown in FIG. 5A, the entire surface of a transparent glass substrate 6 having a size of 300 × 310 mm and a thickness of 1.1 mm and having both sides polished, for example, a glass by a sputtering method. A metal (for example, Mo) having good adhesion to the substrate 6 is formed to a film thickness of about 500 Å to form the underlayer 11, and the metal (for example, Mo) for the underlayer 11 and the underlayer are formed thereon. The metal (for example, Cu) of the low-resistance metal layer 12 formed on 11 is simultaneously sputtered by, for example, a sputtering method to form a first mixing layer 17 with a film thickness of about 500 Å, and then the first mixing layer 17 is formed. On the mixing layer 17, the low resistance metal layer 12 is formed by depositing a low resistance metal (eg, Cu) with a film thickness of about 1 μm by, for example, a sputtering method.
【0046】次に、この低抵抗金属層12上に低抵抗金
属層12の金属(例えば、Cu)と、保護層13の金属
(例えば、Ta)とを例えばスパッタ法により同時にス
パッタリングを行い、500Å程度の膜厚で第2のミキ
シング層18を成膜した後、この第2のミキシング層1
8上に、例えばスパッタ法により酸化防止膜として機能
する金属(例えば、Ta)を500Å程度の膜厚で成膜
して保護層13を形成する。Next, a metal (for example, Cu) of the low resistance metal layer 12 and a metal (for example, Ta) of the protective layer 13 are simultaneously sputtered on the low resistance metal layer 12 by, for example, a sputtering method to obtain 500 Å. After the second mixing layer 18 is formed to a film thickness of about the same, the second mixing layer 1 is formed.
A metal (for example, Ta) that functions as an anti-oxidation film is formed on the film 8 by sputtering, for example, to a film thickness of about 500 Å to form the protective layer 13.
【0047】その後、第1の実施の形態と同様の工程を
経て、下地層11,第1のミキシング層17,低抵抗金
属層12,第2のミキシング層18及び保護層13で構
成される金属配線19をUV硬化樹脂7で埋め込み、金
属配線19上に透明電極9、配向膜(図示省略)を形成
して、配線基板(図1の液晶素子1の電極基板3a,3
bに相当している)20を得た(図5(b)参照)。After that, through a step similar to that of the first embodiment, a metal composed of the underlayer 11, the first mixing layer 17, the low resistance metal layer 12, the second mixing layer 18 and the protective layer 13 is formed. The wiring 19 is embedded with the UV curable resin 7, the transparent electrode 9 and the alignment film (not shown) are formed on the metal wiring 19, and the wiring board (the electrode substrates 3a, 3a of the liquid crystal element 1 of FIG. 1) is formed.
20 (corresponding to b) was obtained (see FIG. 5 (b)).
【0048】このように、本実施の形態では、第1の実
施の形態で得られる効果以外に、金属配線19の下地層
11と低抵抗金属層12の界面、及び低抵抗金属層12
と保護層13の界面に、それぞれの界面を構成する元素
が混合した第1のミキシング層17と第2のミキシング
層18を形成した構造により、第1の実施の形態と同様
に離型工程において、離型治具(図示省略)により型板
14からガラス基板6とUV硬化樹脂7の一体物を剥離
する際に、ガラス基板6と金属配線19の下地層11、
及び低抵抗金属層12と保護層13は、それぞれ第1の
ミキシング層17と第2のミキシング層18を介して良
好に密着しているので、それぞれの界面での剥離は全く
観察されなかった。As described above, in this embodiment, in addition to the effects obtained in the first embodiment, the interface between the underlying layer 11 and the low resistance metal layer 12 of the metal wiring 19 and the low resistance metal layer 12 are obtained.
By the structure in which the first mixing layer 17 and the second mixing layer 18 in which the elements constituting the respective interfaces are mixed are formed on the interface between the protective layer 13 and the protective layer 13, in the releasing step as in the first embodiment, When the integrated body of the glass substrate 6 and the UV curable resin 7 is peeled from the template 14 by a releasing jig (not shown), the base layer 11 of the glass substrate 6 and the metal wiring 19,
Since the low resistance metal layer 12 and the protective layer 13 were in good contact with each other via the first mixing layer 17 and the second mixing layer 18, no peeling was observed at each interface.
【0049】図6(a),(b)は、本発明の第3の実
施の形態に係る上述した液晶素子1の電極基板3a,3
bに適用される配線基板を模式的に示したものである。FIGS. 6 (a) and 6 (b) show the electrode substrates 3a, 3 of the above-described liquid crystal element 1 according to the third embodiment of the present invention.
3 is a schematic view of a wiring board applied to b.
【0050】本実施の形態では、例えば寸法300×3
10mmで厚さ1.1mmの両面研磨された透明なガラ
ス基板6上の全面に、不飽和の金属酸化膜層21を例え
ばスパッタ法により500Å程度の膜厚で形成し(図6
(a)参照)、その上に、第1の実施の形態と同様、下
地層11、低抵抗金属層12、保護層13を例えばスパ
ッタ形成して、フォトリソエッチング法により幅20μ
m、ピッチ320μmのストライプ形状のパターンニン
グして3層構造からなる金属配線22を作製した。In this embodiment, for example, the size is 300 × 3.
An unsaturated metal oxide film layer 21 having a film thickness of about 500 Å is formed on the entire surface of a transparent glass substrate 6 having a thickness of 10 mm and a thickness of 1.1 mm by double-side polishing (see FIG. 6).
(See (a)), and similarly to the first embodiment, an underlayer 11, a low resistance metal layer 12, and a protective layer 13 are formed thereon by, for example, sputtering, and a width of 20 μm is formed by a photolithography etching method.
A metal wiring 22 having a three-layer structure was prepared by patterning a stripe shape having a pitch of m and a pitch of 320 μm.
【0051】金属酸化膜21は、例えばMo,Ti,T
a,Ni,W、あるいはそれらの合金のいずれかをスパ
ッタ用ターゲットとして用い、Arガス中に酸素を混合
したプラズマ中でスパッタリングを行う反応性スパッタ
法によって形成した。The metal oxide film 21 is made of, for example, Mo, Ti, T.
It was formed by a reactive sputtering method in which a, Ni, W, or an alloy thereof was used as a sputtering target and sputtering was performed in plasma in which oxygen was mixed in Ar gas.
【0052】その後、第1の実施の形態と同様の工程を
経て、金属配線22をUV硬化樹脂7で埋め込み、金属
配線22上に透明電極9、配向膜(図示省略)を形成し
て、配線基板(図1の液晶素子1の電極基板3a,3b
に相当している)23を得た(図6(b)参照)。After that, through the same steps as those in the first embodiment, the metal wiring 22 is embedded with the UV curable resin 7, the transparent electrode 9 and the alignment film (not shown) are formed on the metal wiring 22, and the wiring is formed. Substrate (electrode substrates 3a, 3b of the liquid crystal element 1 of FIG. 1
(Corresponding to the above) was obtained (see FIG. 6 (b)).
【0053】このように、本実施の形態では、ガラス基
板6と金属配線22の間に金属酸化膜21を形成した構
造により、第1の実施の形態で得られる効果以外に、ガ
ラス基板6側から入射する外光のガラス基板6と金属配
線22の界面での反射を金属酸化膜21によって大幅に
低減することができた。この時のガラス基板6と金属配
線22の界面での光の反射率を測定したところ、10%
以下に低減していた。また、この配線基板(図1の液晶
素子1の電極基板3a,3bに相当している)23を備
えた液晶素子は、金属配線22の金属酸化膜21により
外光の反射を低減できるので、表示品質の向上を図るこ
とができる。As described above, in this embodiment, due to the structure in which the metal oxide film 21 is formed between the glass substrate 6 and the metal wiring 22, in addition to the effects obtained in the first embodiment, the glass substrate 6 side is provided. Reflection of external light incident from the interface between the glass substrate 6 and the metal wiring 22 could be greatly reduced by the metal oxide film 21. At this time, the light reflectance at the interface between the glass substrate 6 and the metal wiring 22 was measured and found to be 10%.
It was reduced below. Further, since the liquid crystal element provided with this wiring board (corresponding to the electrode substrates 3a and 3b of the liquid crystal element 1 of FIG. 1) 23 can reduce the reflection of external light by the metal oxide film 21 of the metal wiring 22, The display quality can be improved.
【0054】図7(a),(b),(c)は、本発明の
第4の実施の形態に係る上述した液晶素子1の電極基板
3a,3bに適用される配線基板の製造工程を模式的に
示したものである。7 (a), 7 (b) and 7 (c) show manufacturing steps of a wiring board applied to the electrode boards 3a and 3b of the liquid crystal element 1 according to the fourth embodiment of the present invention. It is shown schematically.
【0055】本実施の形態では、ガラス基板6上に、第
1の実施の形態と同様、下地層11、低抵抗金属層1
2、保護層13を例えばスパッタ形成して、フォトリソ
エッチング法により幅20μm、ピッチ320μmのス
トライプ形状のパターンニングして3層構造からなる金
属配線8を作製した後、ガラス基板6上の金属配線8間
に赤(R),緑(G),青(B)の各画素で構成される
顔料系のカラーフィルター24を、例えばフォトリソエ
ッチング法により約1μmの膜厚で形成した(図7
(a)参照)。In this embodiment, the underlying layer 11 and the low resistance metal layer 1 are formed on the glass substrate 6 as in the first embodiment.
2. The protective layer 13 is formed by sputtering, for example, and is patterned into a stripe shape having a width of 20 μm and a pitch of 320 μm by a photolithographic etching method to form a metal wiring 8 having a three-layer structure, and then the metal wiring 8 on the glass substrate 6 is formed. A pigment-based color filter 24 including red (R), green (G), and blue (B) pixels is formed between them by a photolithographic etching method to have a film thickness of about 1 μm (FIG. 7).
(A)).
【0056】その後、第1の実施の形態と同様の工程
で、カラーフィルター24上の各金属配線8間にUV硬
化樹脂7を充填して硬化させ(図7(b)参照)、金属
配線8の配線パターンに合わせて、例えば幅300μ
m、ピッチ320μmのITO膜からなる透明電極9を
スパッタ形成、パターンニングし、その上に配向膜(図
示省略)を形成して、配線基板(図1の液晶素子1の電
極基板3a,3bに相当している)25を得た(図7
(c)参照)。Thereafter, in the same process as in the first embodiment, the UV curable resin 7 is filled between the metal wirings 8 on the color filter 24 and cured (see FIG. 7B), and the metal wirings 8 are formed. Width of 300μ
m, a transparent electrode 9 made of an ITO film having a pitch of 320 μm is formed by sputtering, and an alignment film (not shown) is formed on the transparent electrode 9 to form a wiring substrate (on the electrode substrates 3a and 3b of the liquid crystal element 1 of FIG. 1). 25 was obtained (corresponding) (FIG. 7).
(C)).
【0057】このように、本実施の形態によれば、カラ
ーフィルター機能を有する配線基板25においても第1
の実施の形態と同様、金属配線8を下地層11、低抵抗
金属層12、保護層13の3層構造とし、ガラス基板6
の表面にガラス基板6と密着性のよい下地層(本実施の
形態ではMo(モリブデン)膜)11を形成し、中間層
の低抵抗金属層(本実施の形態ではCu(銅)膜)12
上に酸化防止膜として機能する保護層(本実施の形態で
はTa(タンタル)膜)13を形成した構造により、第
1の実施の形態と同様に、離型治具(図示省略)により
型板14からガラス基板6とUV硬化樹脂7の一体物を
剥離する際に、ガラス基板6と金属配線8の下地層11
との剥離が抑制されて、歩留りの大幅な向上を図ること
ができた。As described above, according to this embodiment, the first wiring board 25 having the color filter function is also provided.
In the same manner as in the above embodiment, the metal wiring 8 has a three-layer structure of the underlayer 11, the low resistance metal layer 12, and the protective layer 13, and the glass substrate 6
An underlayer (Mo (molybdenum) film in this embodiment) 11 having good adhesion to the glass substrate 6 is formed on the surface of, and a low resistance metal layer (Cu (copper) film in this embodiment) 12 as an intermediate layer is formed.
With a structure in which a protective layer (Ta (tantalum) film in the present embodiment) 13 that functions as an anti-oxidation film is formed on the template plate by a releasing jig (not shown) as in the first embodiment. When the integrated body of the glass substrate 6 and the UV curable resin 7 is peeled from the substrate 14, the underlayer 11 of the glass substrate 6 and the metal wiring 8
It was possible to suppress the peeling from the substrate and to significantly improve the yield.
【0058】更に、金属配線8の低抵抗金属層12上に
酸化防止膜として機能する保護層13を形成したことに
より、金属配線8と透明電極9との安定した導通を得る
ことができた。Further, by forming the protective layer 13 functioning as an anti-oxidation film on the low resistance metal layer 12 of the metal wiring 8, stable conduction between the metal wiring 8 and the transparent electrode 9 can be obtained.
【0059】尚、カラーフィルター24は、フォトリソ
エッチング法以外にも、例えば印刷法、昇華転写法、イ
ンクジェット法によっても形成することができる。The color filter 24 can be formed by a printing method, a sublimation transfer method, or an ink jet method other than the photolithographic etching method.
【0060】また、金属配線8には、第2の実施の形態
で示したように、下地層11と低抵抗金属層12の界
面、及び低抵抗金属層12と保護層13の界面に、それ
ぞれの界面を構成する元素が混合した第1のミキシング
層と第2のミキシング層を形成してもよく、更に、第3
の実施の形態で示したように、ガラス基板6と金属配線
8の間に金属酸化膜を形成してもよい。Further, as shown in the second embodiment, the metal wiring 8 is formed at the interface between the underlayer 11 and the low resistance metal layer 12 and at the interface between the low resistance metal layer 12 and the protective layer 13, respectively. The first mixing layer and the second mixing layer may be formed by mixing the elements constituting the interface of
As shown in the above embodiment, a metal oxide film may be formed between the glass substrate 6 and the metal wiring 8.
【0061】図8(a),(b),(c)は、本発明の
第5の実施の形態に係る上述した液晶素子1の電極基板
3a,3bに適用される配線基板の製造工程を模式的に
示したものである。FIGS. 8A, 8B and 8C show a manufacturing process of a wiring substrate applied to the electrode substrates 3a and 3b of the liquid crystal element 1 described above according to the fifth embodiment of the present invention. It is shown schematically.
【0062】本実施の形態では、先ず、第1の実施の形
態で用いたガラス基板6上に親水性アクリル系のインク
受容層(カラーフィルター層)26を、例えばスピンコ
ートにより0.8μmの膜厚に形成し、その後、カラー
フィルター用インクジェットプリンタ(図示省略)によ
り水性のカラーフィルター用染料インキを、例えば幅3
00μm、ピッチ320μmで打ち込んでインク受容層
26に染み込ませ、更に、200℃で30分加熱し硬化
処理してカラーフィルター27を形成した(図8(a)
参照)。In this embodiment, first, a hydrophilic acrylic ink receiving layer (color filter layer) 26 is formed on the glass substrate 6 used in the first embodiment, for example, by spin coating to form a 0.8 μm film. After being formed to a thickness, an ink-jet printer for color filters (not shown) is used to form an aqueous dye ink for color filters, for example, with a width of 3
A color filter 27 is formed by driving the ink into the ink receiving layer 26 at a pitch of 00 μm and a pitch of 320 μm, and then heating at 200 ° C. for 30 minutes for curing treatment (FIG. 8A).
reference).
【0063】そして、このカラーフィルター27上に第
1の実施の形態と同様、下地層11、低抵抗金属層1
2、保護層13を例えばスパッタ形成して、フォトリソ
エッチング法により幅20μm、ピッチ320μmのス
トライプ形状のパターンニングして3層構造からなる金
属配線8を作製した(図8(a)参照)。Then, on the color filter 27, as in the first embodiment, the underlayer 11 and the low resistance metal layer 1 are formed.
2. The protective layer 13 was formed by sputtering, for example, and patterned by a photolithographic etching method in a stripe shape having a width of 20 μm and a pitch of 320 μm to produce a metal wiring 8 having a three-layer structure (see FIG. 8A).
【0064】その後、第1の実施の形態と同様の工程で
カラーフィルター27上の各金属配線8間にUV硬化樹
脂7を充填して硬化させ(図8(b)参照)、金属配線
8の配線パターンに合わせて、例えば幅300μm、ピ
ッチ320μmのITO膜からなる透明電極9をスパッ
タ形成、パターンニングし、その上に配向膜(図示省
略)を形成して、配線基板(図1の液晶素子1の電極基
板3a,3bに相当している)28を得た(図8(c)
参照)。Then, in the same process as in the first embodiment, the UV curable resin 7 is filled between the metal wirings 8 on the color filter 27 and cured (see FIG. 8B), and the metal wirings 8 are formed. A transparent electrode 9 made of, for example, an ITO film having a width of 300 μm and a pitch of 320 μm is formed by sputtering in accordance with the wiring pattern and patterned, and an alignment film (not shown) is formed on the transparent electrode 9 to form a wiring substrate (the liquid crystal element of FIG. 1). 28 (corresponding to the electrode substrates 3a and 3b of No. 1) was obtained (FIG. 8C).
reference).
【0065】このように、本実施の形態によれば、カラ
ーフィルター27上に金属配線8を有する配線基板28
においても第1の実施の形態と同様、金属配線8を下地
層11、低抵抗金属層12、保護層13の3層構造と
し、ガラス基板6の表面にガラス基板6と密着性のよい
下地層(本実施の形態ではMo(モリブデン)膜)11
を形成し、中間層の低抵抗金属層(本実施の形態ではC
u(銅)膜)12上に酸化防止膜として機能する保護層
(本実施の形態ではTa(タンタル)膜)13を形成し
た構造により、第1の実施の形態と同様に離型工程にお
いて、離型治具(図示省略)により型板14からガラス
基板6とUV硬化樹脂7の一体物を剥離する際に、ガラ
ス基板6と金属配線8の下地層11との剥離が抑制され
て、歩留りの大幅な向上を図ることができた。As described above, according to the present embodiment, the wiring board 28 having the metal wiring 8 on the color filter 27.
In the same manner as in the first embodiment, the metal wiring 8 has a three-layer structure of the underlayer 11, the low resistance metal layer 12, and the protective layer 13, and the underlayer having good adhesion to the glass substrate 6 is provided on the surface of the glass substrate 6. (Mo (molybdenum) film in this embodiment) 11
To form an intermediate low resistance metal layer (in this embodiment, C
Due to the structure in which the protective layer (Ta (tantalum) film in the present embodiment) 13 functioning as an anti-oxidation film is formed on the u (copper) film 12, in the mold release step as in the first embodiment, When the glass substrate 6 and the UV curable resin 7 are separated from the template 14 by a releasing jig (not shown), the glass substrate 6 and the underlying layer 11 of the metal wiring 8 are prevented from being separated, and the yield is improved. We were able to achieve a significant improvement in
【0066】更に、金属配線8の低抵抗金属層12上に
酸化防止膜として機能する保護層13を形成したことに
より、金属配線8と透明電極9との安定した導通を得る
ことができた。Further, by forming the protective layer 13 functioning as an antioxidant film on the low resistance metal layer 12 of the metal wiring 8, stable conduction between the metal wiring 8 and the transparent electrode 9 can be obtained.
【0067】図9(a),(b),(c)は、本発明の
第6の実施の形態に係る上述した液晶素子1の電極基板
3a,3bに適用される配線基板の製造工程を模式的に
示したものである。9 (a), 9 (b) and 9 (c) show the manufacturing process of the wiring substrate applied to the electrode substrates 3a and 3b of the liquid crystal device 1 according to the sixth embodiment of the present invention. It is shown schematically.
【0068】本実施の形態では、上述した第5の実施の
形態と同様な方法で第1の実施の形態で用いたガラス基
板6上のインク受容層(カラーフィルー層)26にカラ
ーフィルター27を形成し、更に、その表面にカラーフ
ィルー保護層(例えば、ポリアミド系の透明コーティン
グ剤)29を、約0.5μmの膜厚でスピンコート及び
ベーキングにより形成した。その後、このカラーフィル
ー保護層29上に第1の実施の形態と同様、下地層1
1、低抵抗金属層12、保護層13を例えばスパッタ形
成して、フォトリソエッチング法により幅20μm、ピ
ッチ320μmのストライプ形状のパターンニングして
3層構造からなる金属配線8を作製した(図9(a)参
照)。In this embodiment, a color filter 27 is formed on the ink receiving layer (color filter layer) 26 on the glass substrate 6 used in the first embodiment in the same manner as in the fifth embodiment. Further, a color filter protective layer (for example, a polyamide-based transparent coating agent) 29 was formed on its surface by spin coating and baking to a film thickness of about 0.5 μm. After that, as in the first embodiment, the underlayer 1 is formed on the color filter protective layer 29.
1. The low resistance metal layer 12 and the protective layer 13 were formed by sputtering, for example, and patterned by a photolithographic etching method in a stripe shape having a width of 20 μm and a pitch of 320 μm to produce a metal wiring 8 having a three-layer structure (see FIG. See a)).
【0069】その後、第1の実施の形態と同様の工程で
カラーフィルター27上の各金属配線8間にUV硬化樹
脂7を充填して硬化させ(図9(b)参照)、金属配線
8の配線パターンに合わせて、例えば幅300μm、ピ
ッチ320μmのITO膜からなる透明電極9をスパッ
タ形成、パターンニングし、その上に配向膜(図示省
略)を形成して、配線基板(図1の液晶素子1の電極基
板3a,3bに相当している)30を得た(図8(c)
参照)。Then, in the same process as in the first embodiment, the UV curable resin 7 is filled between the metal wirings 8 on the color filter 27 and hardened (see FIG. 9B), and the metal wirings 8 are formed. A transparent electrode 9 made of, for example, an ITO film having a width of 300 μm and a pitch of 320 μm is formed by sputtering in accordance with the wiring pattern and patterned, and an alignment film (not shown) is formed on the transparent electrode 9 to form a wiring substrate (the liquid crystal element of FIG. 1). 1 (corresponding to the electrode substrates 3a and 3b) 30 was obtained (FIG. 8C).
reference).
【0070】このように、本実施の形態によれば、カラ
ーフィルター27のカラーフィルター保護層29上に金
属配線8を有する配線基板30においても第1の実施の
形態と同様、金属配線8を下地層11、低抵抗金属層1
2、保護層13の3層構造とし、ガラス基板6の表面に
ガラス基板6と密着性のよい下地層(本実施の形態では
Mo(モリブデン)膜)11を形成し、中間層の低抵抗
金属層(本実施の形態ではCu(銅)膜)12上に酸化
防止膜として機能する保護層(本実施の形態ではTa
(タンタル)膜)13を形成した構造により、第1の実
施の形態と同様に離型工程において、離型治具(図示省
略)により型板14からガラス基板6とUV硬化樹脂7
の一体物を剥離する際に、ガラス基板6と金属配線8の
下地層11との剥離が抑制されて、歩留りの大幅な向上
を図ることができた。As described above, according to the present embodiment, even in the wiring board 30 having the metal wiring 8 on the color filter protection layer 29 of the color filter 27, the metal wiring 8 is formed under the same condition as in the first embodiment. Formation 11, low resistance metal layer 1
2. A three-layer structure of the protective layer 13 is formed, and a base layer (Mo (molybdenum) film in this embodiment) 11 having good adhesion to the glass substrate 6 is formed on the surface of the glass substrate 6, and a low resistance metal of the intermediate layer is formed. A protective layer (Ta in the present embodiment) functioning as an antioxidant film is formed on the layer (Cu (copper) film in the present embodiment) 12.
Due to the structure in which the (tantalum) film 13 is formed, in the releasing step as in the first embodiment, the glass plate 6 and the UV curing resin 7 are removed from the template 14 by the releasing jig (not shown).
It was possible to suppress the peeling between the glass substrate 6 and the underlying layer 11 of the metal wiring 8 when peeling the integrated body, and to significantly improve the yield.
【0071】更に、金属配線8の低抵抗金属層12上に
酸化防止膜として機能する保護層13を形成したことに
より、金属配線8と透明電極9との安定した導通を得る
ことができた。Further, by forming the protective layer 13 functioning as an anti-oxidation film on the low resistance metal layer 12 of the metal wiring 8, stable conduction between the metal wiring 8 and the transparent electrode 9 can be obtained.
【0072】また、カラーフィルター27上に形成した
カラーフィルター保護層29により、フォトリソエッチ
ング法により金属配線8を形成した際に、酸等のエッチ
ング液によるカラーフィルター27の脱色等を防止する
ことができる。Further, the color filter protective layer 29 formed on the color filter 27 can prevent the color filter 27 from being discolored by an etching solution such as an acid when the metal wiring 8 is formed by the photolithographic etching method. .
【0073】更に、上述した第4乃至第6の各実施の形
態において、第2の実施の形態で示したように、金属配
線8の下地層11と低抵抗金属層12の界面、及び低抵
抗金属層12と保護層13の界面に、それぞれの界面を
構成する元素が混合した第1のミキシング層と第2のミ
キシング層を形成してもよく、更に、第3の実施の形態
で示したように、ガラス基板6と金属配線8の間に金属
酸化膜を形成してもよい。Furthermore, in each of the fourth to sixth embodiments described above, as shown in the second embodiment, the interface between the underlying layer 11 of the metal wiring 8 and the low resistance metal layer 12, and the low resistance. At the interface between the metal layer 12 and the protective layer 13, a first mixing layer and a second mixing layer may be formed in which the elements forming the respective interfaces are mixed, and further, as shown in the third embodiment. Thus, a metal oxide film may be formed between the glass substrate 6 and the metal wiring 8.
【0074】[0074]
【発明の効果】以上説明したように、本発明によれば、
金属配線を、基板上に該基板と密着性のよい金属からな
る第1の層と、この第1の層上に低抵抗の金属からなる
第2の層と、この第2の層上に該第2の層の酸化を防止
する金属からなる第3の層を順に形成して多層構造とし
たことにより、基板と金属配線とが良好に密着され、且
つ金属配線と透明電極との安定した導通を図ることがで
きる配線基板を提供することができる。As described above, according to the present invention,
The metal wiring is formed on the substrate by a first layer made of a metal having good adhesion to the substrate, a second layer made of a low-resistance metal on the first layer, and a second layer formed on the second layer. Since the third layer made of a metal for preventing the oxidation of the second layer is sequentially formed to have a multilayer structure, the substrate and the metal wiring are well adhered to each other, and stable conduction between the metal wiring and the transparent electrode is provided. It is possible to provide a wiring board that can achieve the above.
【0075】また、本発明に係る配線基板の製造方法に
よれば、基板上に該基板と密着性のよい金属からなる第
1の層を形成して、この第1の層上に低抵抗の金属から
なる第2の層を形成し、更に、この第2の層上に該第2
の層の酸化を防止する金属からなる第3の層を形成して
多層構造の金属配線を形成することにより、基板と金属
配線とが良好に密着して歩留りが向上し、且つ金属配線
と透明電極との安定した導通を図ることができる。Further, according to the method for manufacturing a wiring board of the present invention, the first layer made of a metal having good adhesion to the substrate is formed on the substrate, and the low resistance film is formed on the first layer. A second layer of metal is formed, and the second layer is formed on the second layer.
By forming a third layer made of a metal for preventing the oxidation of the above layer to form a metal wiring having a multi-layered structure, the substrate and the metal wiring are well adhered to each other, the yield is improved, and the metal wiring is transparent. Stable conduction with the electrodes can be achieved.
【0076】また、本発明に係る配線基板を備えた液晶
素子によれば、基板と金属配線とが良好に密着され、且
つ金属配線と透明電極との安定して導通することによ
り、高品位な表示を行うことができる。Further, according to the liquid crystal element provided with the wiring substrate according to the present invention, the substrate and the metal wiring are well adhered to each other, and the metal wiring and the transparent electrode are stably conducted, so that the quality is high. The display can be done.
【図1】本発明の第1の実施の形態に係る配線基板を備
えた液晶素子を示す概略断面図。FIG. 1 is a schematic cross-sectional view showing a liquid crystal element including a wiring board according to a first embodiment of the present invention.
【図2】第1の実施の形態に係る配線基板の製造方法を
説明するための図で、(a)は金属配線を形成する金属
層の成膜工程を示す図、(b)は基板上に形成された金
属配線を示す図、(c)は型板上にUV硬化樹脂を滴下
した状態を示す図、(d)は金属配線を形成した基板で
型板上のUV硬化樹脂を挟む状態を示す図。2A and 2B are views for explaining the method of manufacturing the wiring board according to the first embodiment, where FIG. 2A is a view showing a film forming process of a metal layer for forming a metal wiring, and FIG. The figure which shows the metal wiring which is formed in Figure, (c) the figure which shows the state where the UV hardening resin is dripped onto the mold board, (d) the state which sandwiches the UV hardening resin on the mold board with the baseplate where the metal wiring is formed FIG.
【図3】第1の実施の形態に係る配線基板の製造方法を
説明するための図で、(a)は基板と型板間に挟んだU
V硬化樹脂をプレス機で加圧している状態を示す図、
(b)はUV硬化樹脂にUV光を照射している状態を示
す図、(c),(d)は型板を基板の金属配線上から剥
離した状態を示す図。FIG. 3 is a diagram for explaining the method of manufacturing the wiring board according to the first embodiment, in which (a) is a U sandwiched between the board and the template.
The figure which shows the state which presses V hardening resin with the press machine,
(B) is a figure which shows the state which irradiates UV light to UV curing resin, (c), (d) is a figure which shows the state which peeled the template from the metal wiring of a board | substrate.
【図4】金属配線上に透明電極を形成して得られた第1
の実施の形態に係る配線基板を示す図。FIG. 4 shows a first obtained by forming a transparent electrode on a metal wiring.
FIG. 6 is a diagram showing a wiring board according to the embodiment of FIG.
【図5】第2の実施の形態に係る配線基板の製造方法を
説明するための図で、(a)は金属配線を形成する金属
層の成膜工程を示す図、(b)は金属配線上に透明電極
を形成して得られた第2の実施の形態に係る配線基板を
示す図。5A and 5B are views for explaining a method of manufacturing a wiring board according to a second embodiment, FIG. 5A is a diagram showing a film forming process of a metal layer for forming metal wiring, and FIG. 5B is a metal wiring. The figure which shows the wiring board which concerns on 2nd Embodiment obtained by forming a transparent electrode on it.
【図6】第3の実施の形態に係る配線基板の製造方法を
説明するための図で、(a)は金属配線を形成する金属
層の成膜工程を示す図、(b)は金属配線上に透明電極
を形成して得られた第3の実施の形態に係る配線基板を
示す図。6A and 6B are views for explaining a method for manufacturing a wiring board according to a third embodiment, FIG. 6A is a diagram showing a metal layer forming process for forming a metal wiring, and FIG. 6B is a metal wiring. The figure which shows the wiring board which concerns on 3rd Embodiment obtained by forming a transparent electrode on it.
【図7】第4の実施の形態に係る配線基板の製造方法を
説明するための図で、(a)は金属配線の間にカラーフ
ィルターを形成した状態を示す図、(b)はカラーフィ
ルター上にUV硬化樹脂を充填して硬化した状態を示す
図、(c)はUV硬化樹脂上に透明電極を形成して得ら
れた第4の実施の形態に係る配線基板を示す図。7A and 7B are views for explaining a method of manufacturing a wiring board according to a fourth embodiment, FIG. 7A shows a state in which a color filter is formed between metal wirings, and FIG. 7B is a color filter. The figure which shows the state which filled up UV hardening resin on it and hardened | cured, (c) is a figure which shows the wiring board which concerns on 4th Embodiment obtained by forming a transparent electrode on UV hardening resin.
【図8】第5の実施の形態に係る配線基板の製造方法を
説明するための図で、(a)はカラーフィルター上に金
属配線を形成した状態を示す図、(b)はカラーフィル
ター上にUV硬化樹脂を充填して硬化した状態を示す
図、(c)はUV硬化樹脂上に透明電極を形成して得ら
れた第5の実施の形態に係る配線基板を示す図。8A and 8B are views for explaining a method of manufacturing a wiring board according to a fifth embodiment, FIG. 8A shows a state in which metal wiring is formed on a color filter, and FIG. The figure which shows the state which filled with UV curable resin and hardened | cured, and (c) is a figure which shows the wiring board which concerns on 5th Embodiment obtained by forming a transparent electrode on UV curable resin.
【図9】第6の実施の形態に係る配線基板の製造方法を
説明するための図で、(a)はカラーフィルター上にカ
ラーフィルター保護層を介して金属配線を形成した状態
を示す図、(b)はカラーフィルター保護層上にUV硬
化樹脂を充填して硬化した状態を示す図、(c)はUV
硬化樹脂上に透明電極を形成して得られた第6の実施の
形態に係る配線基板を示す図。FIG. 9 is a view for explaining the method of manufacturing the wiring board according to the sixth embodiment, FIG. 9A is a view showing a state in which metal wiring is formed on the color filter via a color filter protective layer; (B) is a diagram showing a state in which a UV curable resin is filled on the color filter protective layer and cured, and (c) is UV.
The figure which shows the wiring board which concerns on 6th Embodiment obtained by forming a transparent electrode on hardened resin.
【図10】従来例に係る配線基板の製造方法を説明する
ための図で、(a)は型板上にUV硬化樹脂を滴下した
状態を示す図、(b)は金属配線を形成した基板で型板
上のUV硬化樹脂を挟む状態を示す図。10A and 10B are views for explaining a method for manufacturing a wiring board according to a conventional example, in which FIG. 10A is a view showing a state in which a UV curable resin is dropped on a template, and FIG. 10B is a board having metal wiring formed thereon. The figure which shows the state which pinches | interposes UV hardening resin on a template.
【図11】従来例に係る配線基板の製造方法を説明する
ための図で、(a)はプレス機により型板でUV硬化樹
脂を加圧した状態を示す図、(b)はUV硬化樹脂にU
V光を照射している状態を示す図、(c),(d)は型
板を基板の金属配線上から剥離した状態を示す図、
(e)は金属配線上に透明電極を形成して得られた従来
例に係る配線基板を示す図。11A and 11B are views for explaining a method for manufacturing a wiring board according to a conventional example, FIG. 11A is a view showing a state where a UV curing resin is pressed by a template by a press machine, and FIG. To U
The figure which shows the state which irradiates V light, (c) and (d) the figure which shows the state which peeled the template from the metal wiring of the baseplate,
(E) is a figure which shows the wiring board which concerns on the prior art example obtained by forming a transparent electrode on a metal wiring.
1 液晶素子 3、3a,3b、20、23、25、28、30
電極基板(配線基板) 5 カイラルスメクティック液晶(液晶) 6、6a,6b ガラス基板(基板) 7 UV硬化樹脂(樹脂) 8、8a,8b 金属配線 9、9a,9b 透明電極 10a,10b 配向膜 11、11a,11b 下地層 12、12a,12b 低抵抗層 13、13a,13b 保護層 14 型板 15 プレス機 16 UV光(光) 17 第1のミキシング層(ミキシング層) 18 第2のミキシング層(ミキシング層) 24,27 カラーフィルター 26 インク受容層 29 カラーフィルター保護層1 liquid crystal element 3, 3a, 3b, 20, 23, 25, 28, 30
Electrode substrate (wiring substrate) 5 Chiral smectic liquid crystal (liquid crystal) 6, 6a, 6b Glass substrate (substrate) 7 UV curable resin (resin) 8, 8a, 8b Metal wiring 9, 9a, 9b Transparent electrode 10a, 10b Alignment film 11 , 11a, 11b Underlayer 12, 12a, 12b Low resistance layer 13, 13a, 13b Protective layer 14 Template 15 Press machine 16 UV light (light) 17 First mixing layer (mixing layer) 18 Second mixing layer ( Mixing layer) 24,27 Color filter 26 Ink receiving layer 29 Color filter protective layer
Claims (41)
と、前記金属配線の間に該金属配線とほぼ同じ厚さで充
填された樹脂と、前記樹脂上に前記金属配線と電気的に
接するようにして形成された透明電極と、を有する配線
基板において、 前記金属配線を、前記基板上に該基板と密着性のよい金
属からなる第1の層と、前記第1の層上に低抵抗の金属
からなる第2の層と、前記第2の層上に該第2の層の酸
化を防止する金属からなる第3の層を順に形成して多層
構造とした、 ことを特徴とする配線基板。1. A metal wiring having a wiring pattern formed on a surface of a substrate, a resin filled between the metal wirings with substantially the same thickness as the metal wirings, and electrically contacting the metal wirings on the resin. A transparent electrode formed in accordance with the present invention, wherein the metal wiring is formed on the substrate by a first layer made of a metal having good adhesion to the substrate, and a low resistance is formed on the first layer. A wiring board, wherein a second layer made of a metal and a third layer made of a metal for preventing the oxidation of the second layer are sequentially formed on the second layer to form a multilayer structure. .
Ta,Ni、あるいはそれらの合金のいずれかで形成さ
れる、 請求項1記載の配線基板。2. The first layer comprises Mo, Ti, W, Al,
The wiring board according to claim 1, which is formed of either Ta, Ni, or an alloy thereof.
で形成される、 請求項1記載の配線基板。3. The wiring board according to claim 1, wherein the second layer is formed of Cu or an alloy thereof.
Ni、あるいはそれらの合金のいずれかで形成される、 請求項1記載の配線基板。4. The third layer comprises Mo, Ti, W, Ta,
The wiring board according to claim 1, which is formed of either Ni or an alloy thereof.
及び前記第2の層と前記第3の層との界面に、それぞれ
の界面を構成する元素が混合したミキシング層をそれぞ
れ形成した、 請求項1乃至4のいずれか1項記載の配線基板。5. An interface between the first layer and the second layer,
The wiring board according to any one of claims 1 to 4, wherein a mixing layer in which an element forming each interface is mixed is formed at an interface between the second layer and the third layer.
の間に、酸素を含有した不飽和の金属酸化膜を形成し
た、 請求項1乃至5のいずれか1項記載の配線基板。6. The wiring board according to claim 1, wherein an unsaturated metal oxide film containing oxygen is formed between the substrate and the first layer of the metal wiring. .
置した、 請求項1乃至6のいずれか1項記載の配線基板。7. The wiring board according to claim 1, wherein a color filter is arranged between the metal wirings.
との間にカラーフィルターを配置した、 請求項1乃至7のいずれか1項記載の配線基板。8. The wiring board according to claim 1, further comprising a color filter disposed between the board and the first layer of the metal wiring.
前記第1の層との間に前記カラーフィルターを保護する
カラーフィルター保護層を形成した、 請求項8記載の配線基板。9. The wiring board according to claim 8, wherein a color filter protective layer for protecting the color filter is formed between the color filter and the first layer of the metal wiring.
程と、前記金属配線の間に樹脂を充填する第2の工程
と、前記樹脂に光を照射して硬化させる第3の工程と、
前記樹脂上に前記金属配線と電気的に接するようにして
前記透明電極を形成する第4の工程と、を有する配線基
板の製造方法において、 前記第1の工程で、前記基板上に該基板と密着性のよい
金属からなる第1の層を形成して、前記第1の層上に低
抵抗の金属からなる第2の層を形成し、更に、前記第2
の層上に該第2の層の酸化を防止する金属からなる第3
の層を形成して多層構造の前記金属配線を形成する、 ことを特徴とする配線基板の製造方法。13. A first step of forming metal wiring on a substrate, a second step of filling a resin between the metal wirings, and a third step of irradiating the resin with light to cure the resin. ,
A fourth step of forming the transparent electrode on the resin so as to be in electrical contact with the metal wiring, the method including the steps of: A first layer made of a metal having good adhesiveness is formed, a second layer made of a metal having a low resistance is formed on the first layer, and the second layer is further formed.
A third metal layer overlying the second metal layer to prevent oxidation of the second layer
And forming the metal wiring having a multi-layered structure.
l,Ta,Ni、あるいはそれらの合金のいずれかで形
成される、 請求項13記載の配線基板の製造方法。14. The first layer is Mo, Ti, W, A
The method for manufacturing a wiring board according to claim 13, wherein the wiring board is formed of any one of 1, 1, Ta, Ni, or an alloy thereof.
金で形成される、 請求項13記載の配線基板の製造方法。15. The method of manufacturing a wiring board according to claim 13, wherein the second layer is formed of Cu or an alloy thereof.
a,Ni、あるいはそれらの合金のいずれかで形成され
る、 請求項13記載の配線基板の製造方法。16. The third layer comprises Mo, Ti, W, T
The method for manufacturing a wiring board according to claim 13, wherein the wiring board is formed of a, Ni, or an alloy thereof.
面、及び前記第2の層と前記第3の層との界面に、それ
ぞれの界面を構成する元素が混合したミキシング層をそ
れぞれ形成した、 請求項13乃至16のいずれか1項記載の配線基板の製
造方法。17. A mixing layer in which an element forming each interface is mixed is provided at an interface between the first layer and the second layer and at an interface between the second layer and the third layer. The method for manufacturing a wiring board according to claim 13, which is formed respectively.
層との間に、酸素を含有した不飽和の金属酸化膜を形成
した、 請求項13乃至17のいずれか1項記載の配線基板の製
造方法。18. The wiring board according to claim 13, wherein an unsaturated metal oxide film containing oxygen is formed between the substrate and the first layer of the metal wiring. Manufacturing method.
配置した、 請求項13乃至18のいずれか1項記載の配線基板の製
造方法。19. The method for manufacturing a wiring board according to claim 13, wherein a color filter is arranged between the metal wirings.
層との間にカラーフィルターを配置した、 請求項13乃至19のいずれか1項記載の配線基板の製
造方法。20. The method of manufacturing a wiring board according to claim 13, wherein a color filter is arranged between the substrate and the first layer of the metal wiring.
の前記第1の層との間に前記カラーフィルターを保護す
るカラーフィルター保護層を形成した、 請求項20記載の配線基板の製造方法。21. The method of manufacturing a wiring board according to claim 20, wherein a color filter protective layer for protecting the color filter is formed between the color filter and the first layer of the metal wiring.
の電極基板の間に液晶を挟持してなる液晶素子におい
て、 少なくとも一方の前記電極基板は、基板と、 前記基板表面に配線パターンされた金属配線と、 前記金属配線の間に該金属配線とほぼ同じ厚さに充填さ
れた樹脂と、 前記樹脂上に前記金属配線と電気的に接するようにして
形成された透明電極と、からなり、 前記金属配線を、前記基板上に該基板と密着性のよい金
属からなる第1の層と、前記第1の層上に低抵抗の金属
からなる第2の層と、前記第2の層上に該第2の層の酸
化を防止する金属からなる第3の層を順に形成して多層
構造とした、 ことを特徴とする液晶素子。26. In a liquid crystal device comprising a pair of electrode substrates arranged so as to face each other with a liquid crystal sandwiched therebetween, at least one of the electrode substrates is a substrate, and a metal having a wiring pattern on the substrate surface. Wirings, a resin filled between the metal wirings to have substantially the same thickness as the metal wirings, and a transparent electrode formed on the resin so as to be in electrical contact with the metal wirings, Metal wiring on the substrate, a first layer made of a metal having good adhesion to the substrate, a second layer made of a low-resistance metal on the first layer, and a second layer formed on the second layer. A liquid crystal element, wherein a third layer made of a metal that prevents oxidation of the second layer is sequentially formed to have a multilayer structure.
l,Ta,Ni、あるいはそれらの合金のいずれかで形
成される、 請求項26記載の液晶素子。27. The first layer comprises Mo, Ti, W, A
27. The liquid crystal device according to claim 26, which is formed of any one of 1, Ta, Ni, or an alloy thereof.
金で形成される、 請求項26記載の液晶素子。28. The liquid crystal device according to claim 26, wherein the second layer is formed of Cu or an alloy thereof.
a,Ni、あるいはそれらの合金のいずれかで形成され
る、 請求項26記載の液晶素子。29. The third layer comprises Mo, Ti, W, T
27. The liquid crystal element according to claim 26, which is formed of either a, Ni, or an alloy thereof.
面、及び前記第2の層と前記第3の層との界面に、それ
ぞれの界面を構成する元素が混合したミキシング層をそ
れぞれ形成した、 請求項26乃至29のいずれか1項記載の液晶素子。30. At the interface between the first layer and the second layer, and at the interface between the second layer and the third layer, a mixing layer in which an element constituting each interface is mixed is provided. 30. The liquid crystal element according to claim 26, which is formed respectively.
層との間に、酸素を含有した不飽和の金属酸化膜を形成
した、 請求項26乃至30のいずれか1項記載の液晶素子。31. The liquid crystal device according to claim 26, wherein an unsaturated metal oxide film containing oxygen is formed between the substrate and the first layer of the metal wiring. .
配置した、 請求項26乃至31のいずれか1項記載の液晶素子。32. The liquid crystal device according to claim 26, wherein a color filter is arranged between the metal wirings.
層との間にカラーフィルターを配置した、 請求項26乃至32のいずれか1項記載の液晶素子。33. The liquid crystal element according to claim 26, wherein a color filter is arranged between the substrate and the first layer of the metal wiring.
の前記第1の層との間に前記カラーフィルターを保護す
るカラーフィルター保護層を形成した、 請求項33記載の液晶素子。34. The liquid crystal element according to claim 33, wherein a color filter protective layer for protecting the color filter is formed between the color filter and the first layer of the metal wiring.
ィック液晶である、 請求項38記載の液晶素子。39. The liquid crystal device according to claim 38, wherein the ferroelectric liquid crystal is a chiral smectic liquid crystal.
記金属配線は単純マトリクス配置される、 請求項26記載の液晶素子。41. The liquid crystal device according to claim 26, wherein the transparent electrodes and the metal wirings of each electrode substrate are arranged in a simple matrix.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8066444A JPH09258246A (en) | 1996-03-22 | 1996-03-22 | Wiring board, method of manufacturing the same, and liquid crystal device including the wiring board |
| US08/814,318 US6208400B1 (en) | 1996-03-15 | 1997-03-11 | Electrode plate having metal electrodes of aluminum or nickel and copper or silver disposed thereon |
| DE69717889T DE69717889D1 (en) | 1996-03-15 | 1997-03-14 | Electrode plate, method of manufacturing the plate, liquid crystal device containing the plate, and method of manufacturing the device |
| CN97110064A CN1111291C (en) | 1996-03-15 | 1997-03-14 | Electrode plate, process for producing plate, liquid crystal device including plate and process for producing the device |
| EP97301727A EP0795776B1 (en) | 1996-03-15 | 1997-03-14 | Electrode plate, process for producing the plate, liquid crystal, device incluiding the plate and process for producing the device |
| KR1019970008879A KR100262062B1 (en) | 1996-03-15 | 1997-03-15 | An electrode plate, a method of manufacturing the same, a liquid crystal device comprising the same, and a method of manufacturing the device |
| US09/328,468 US6184964B1 (en) | 1996-03-15 | 1999-06-09 | Electrode plate with two-layer metal electrodes including copper or silver layer, and flattened anti-oxidation and insulating layers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8066444A JPH09258246A (en) | 1996-03-22 | 1996-03-22 | Wiring board, method of manufacturing the same, and liquid crystal device including the wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09258246A true JPH09258246A (en) | 1997-10-03 |
Family
ID=13315959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8066444A Pending JPH09258246A (en) | 1996-03-15 | 1996-03-22 | Wiring board, method of manufacturing the same, and liquid crystal device including the wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09258246A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6491378B2 (en) | 1998-12-08 | 2002-12-10 | Seiko Epson Corporation | Ink jet head, ink jet printer, and its driving method |
| US6873383B1 (en) | 1998-04-08 | 2005-03-29 | Seiko Epson Corporation | Liquid crystal device and electronic apparatus |
| US7586197B2 (en) | 2005-07-15 | 2009-09-08 | Samsung Electronics, Co., Ltd | Wire structure, method of forming wire, thin film transistor substrate, and method of manufacturing thin film transistor substrate |
-
1996
- 1996-03-22 JP JP8066444A patent/JPH09258246A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6873383B1 (en) | 1998-04-08 | 2005-03-29 | Seiko Epson Corporation | Liquid crystal device and electronic apparatus |
| US7092055B2 (en) | 1998-04-08 | 2006-08-15 | Seiko Epson Corporation | Liquid crystal device and electronic apparatus |
| US7483100B2 (en) | 1998-04-08 | 2009-01-27 | Seiko Epson Corporation | Liquid crystal device and electronic apparatus |
| US6491378B2 (en) | 1998-12-08 | 2002-12-10 | Seiko Epson Corporation | Ink jet head, ink jet printer, and its driving method |
| US7586197B2 (en) | 2005-07-15 | 2009-09-08 | Samsung Electronics, Co., Ltd | Wire structure, method of forming wire, thin film transistor substrate, and method of manufacturing thin film transistor substrate |
| US8173492B2 (en) | 2005-07-15 | 2012-05-08 | Samsung Electronics Co., Ltd. | Method of manufacturing thin film transistor substrate |
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