JPH09264858A - Multifunctional sample surface analyzer - Google Patents

Abstract

(57) Abstract: A multifunctional sample surface analyzer capable of clearly distinguishing and analyzing an extrinsic sample surface adsorbent of a material and the analysis of the material itself and its surface. An electron gun (1) for obtaining a primary electron beam (16) for excitation, at least a condenser lens (3) for focusing the primary electron beam (16) from the electron gun (1), an objective lens (6), and a sample of the primary electron beam (16). The means for generating the desorbed positive ions 18 and the secondary electron beam 17 by irradiating 7 and the means for guiding the desorbed positive ions 18 and the secondary electron beam 17 to the upper part, and the desorption positive ion guided to the upper part. A deflection electrode 5 that distributes the ions 18 and the secondary electron beam 17 by utilizing the polarity difference between them, an electron beam detection system that detects the secondary electron beam 17, and a desorption positive ion detection system that detects the desorbed positive ions 18. To provide.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a multifunctional sample surface analyzer.

[0002]

2. Description of the Related Art Conventionally, ESD (electron impact desorption: El
electron Stimulated Desorpti
on) or SIMS (secondary ion mass spectrometer: Sec)
only Ion Mass Spectrometer
An analysis method having a single function of try) has been developed, and SIMS in particular is widely used. In principle, ESD is difficult to analyze except for adsorbates (physical adsorption) and contaminants that are weakly bound. With SIMS, surface analysis of the sample itself or bulk analysis is possible, but sensitivity to analysis of surface adsorbed molecules and contaminants is poor.

On the other hand, ESD is effective in detecting extrinsic impurity contamination derived from the environment in which the sample is placed and the history of the sample, but intrinsic impurity analysis of the sample itself (sample itself) is difficult. is there. This can be said to be an essential problem due to the use of electrons with a small mass. In addition, this technique is characterized in that the sample itself is less damaged and the extrinsic contaminant detection sensitivity is high.

There are known examples as follows. Known examples of SIMS: Japan Society for the Promotion of Science, Microanalysis 141st Committee Editing; Microbeam Analysis,
P. 289 (1985) Known examples of SEM: Japan Society for the Promotion of Science, Microanalysis 141st Committee Editing; Microbeam Analysis,
P. 187 (1985) Known example of ESD: C.I. G. FIG. Panta and T.M.
E. FIG. Mayday; Appl. Surface Sci,
7 (1981) 115 In addition, as a conventional technique using an electron as an excitation source, EDX
(Energy dispersive X-ray analysis); There is elemental analysis by energy selection of specific X-rays generated by electron irradiation (light elements less than Li cannot be analyzed), and AES (Auger electron spectroscopy); generated by electron irradiation Elemental analysis by measuring the energy of Auger electrons (light elements below He cannot be analyzed) can be mentioned.

[0005]

Various fine devices such as LSIs (Large Scale Integrated Circuits) are composed of a stack of thin films, that is, a multilayer film, and the performance and yield thereof are determined by contamination at the interface and impurity elements. Strongly depends on the type. Therefore, it is important to sufficiently control the properties of both the surface and the film itself in the laminating process, and evaluation means for them is essential.

However, at present, there is no analytical technique for distinguishing the extrinsic adsorbate on the material from the material itself and its surface with high accuracy. In view of the above situation, the present invention performs high-resolution image observation of an extremely small area on the material surface, and at the same time, analyzes by distinctly distinguishing the extrinsic surface adsorbate of the material in the same area, the material itself and the analysis of the surface thereof. It is an object of the present invention to provide a multifunctional surface sample analyzer having both an extremely surface analysis method capable of performing the same.

[0007]

In order to achieve the above object, the present invention provides [1] an electron gun for obtaining a primary electron beam for excitation in a multifunctional sample surface analyzer, and the primary gun from the electron gun. At least a condenser lens and an objective lens for focusing an electron beam, means for generating desorbed positive ions and a secondary electron beam by irradiating the sample with the primary electron beam, the desorbed positive ions and the secondary electron beam Means for guiding the electron beam to the upper part, a deflection electrode which distributes the desorbed positive ions and the secondary electron beam guided to the upper part by using the polarity difference, an electron beam detection system for detecting the secondary electron beam, and the desorption electrode. A desorption positive ion detection system for detecting desorption positive ions is provided.

[2] In the multi-functional sample surface analyzer according to the above [1], the deflection electrode is a deflection plate. [3] In the multifunctional sample surface analyzer of the above [1], the deflection electrode is a parallel plate mesh deflection electrode. [4] In the multifunctional surface analyzer according to the above [1],
The deflection electrode is a deflection plate having an opening.

[5] In the multifunctional sample surface analysis device according to the above [1], an ion / electron extraction electrode is arranged above the sample. [6] In the multifunctional sample surface analyzer of the above [5], the ion / electron extraction electrode is a mesh electrode. [7] In the multifunctional sample surface analyzer of the above [5], the ion / electron extraction electrode is a perforated plate electrode.

[8] In the multifunctional sample surface analysis device according to the above [5], the ion / electron extraction electrode is a hemispherical mesh electrode.

[9] In the multifunctional sample surface analyzer according to the above [5], [6], [7] or [8], a negative voltage is applied to the ion / electron extraction electrode to detect the desorbed positive ions. It is designed to be in mode.

[10] In the multi-functional sample surface analyzer according to the above [5], [6], [7] or [8], a secondary voltage is applied to the secondary electrode by applying a positive voltage to the ion / electron extraction electrode. The electronic detection mode is set. [11] The multifunctional sample surface analyzer according to the above [1], wherein an adsorbed substance on the sample surface is detected.

[12] The multifunctional sample surface analyzer according to the above [1], wherein the constituent substances of the sample are detected. [13] The multifunctional sample surface analyzer according to the above [1], wherein a monoatomic layer of the sample is measured. [14] In the multi-functional sample surface analyzer described in [1] above, a trace analysis is performed by integrating detection signals.

[15] The multi-functional sample surface analyzer according to the above [1], wherein the adsorbed material and the constituent material of the sample are detected separately by changing the current and energy of the primary electron beam. Is. As described above, the positions of the secondary electron detector and the mass spectrometer are arranged above the objective lens, and the secondary electrons and ESD ions are detected above the objective lens. This way,
Compared with the case where it is arranged between the sample and the objective lens, the focal length of the objective lens can be shortened, so that the working distance (work
ng distance) can be shortened, the spot of the electron beam can be narrowed down, and the aberration can be reduced. Therefore, the resolution of the SEM can be increased. In addition, this arrangement allows the secondary ions and the ESD ions to be extracted with a large solid angle in the direction of the primary electron beam having a high emission distribution thereof, thereby improving sensitivity.

In fact, with such an arrangement, the resolution of the secondary electron image and the ESD ion image was remarkably improved, and the sensitivity was improved about 2.4 times in the micro area analysis.

[0015]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a block diagram of a multi-functional sample surface analyzer showing a first embodiment of the present invention. In this figure, 1 is an electron gun, 2 is a diaphragm, 3 is a condenser lens, 4 is a deflection electrode for scanning, 5 is a deflection plate as a deflection electrode, 6 is an objective lens, 7 is a sample, and 8 is quadrupole mass spectrometry. Total, 9 is a CPU (central processing unit), 10 is a scanning power source, 11 is an ion image CRT, 12 is a post-stage acceleration electrode, 1
3 is a scintillator, 14 is a photomultiplier, 15 is an electron image CRT, 16 is a primary electron beam for excitation, 17 is a secondary electron, 18 is a desorption positive ion (ESD ion), 19
Is a sample table.

In this embodiment, desorption positive ions (ESD ions) 18 and secondary electrons 17 are emitted from the sample 7 by irradiation of the excitation primary electron beam 16 from the electron gun 1. The desorbed positive ions (ESD ions) 18 and the secondary electrons 17 are raised to a considerable height by the objective lens 6 and the deflection plate 5. Therefore, voltages of the same positive and negative values are applied to the deflection plate 5 to deflect the secondary electrons 17 and the desorbed positive ions 18 to the left and right, and the desorbed positive ions 18 are quadrupole mass spectrometer 8
Detected by the CPU 9, processed by the CPU 9, and the scanning power supply 10
Can be displayed on the ion image CRT 11.

In this way, it becomes possible to simultaneously observe the elemental image of the same region on the surface and the secondary electron image (SEM image),
Analysis and observation can be performed simultaneously. In addition, first, by observing the secondary electron image (SEM image), selecting a desired analysis place, irradiating the position with the electron beam, and measuring the mass spectrum mode, the element at that place is measured. Analysis can also be performed.

On the other hand, the secondary electrons 17 emitted from the sample 7
Is detected by the photomultiplier 14 through the post-acceleration electrode 12 and the scintillator 13, and can be displayed on the CRT 15 for electronic image by scanning with the scanning power supply 10.
And introduce it into the secondary electron detection system for analysis and observation. FIG. 2 is a diagram showing a modification in which a parallel plate mesh deflection electrode 5a is used instead of the deflection plate 5 as the deflection electrode in FIG.

Hereinafter, the operation will be described. By irradiation with the primary electron beam 16 for excitation, the desorbed positive ions 18 and secondary electrons 17 emitted from the surface of the sample 7 are guided to the upper part of the objective lens 6, and the parallel plate mesh deflection electrode 5a provided there.
To the quadrupole mass spectrometer 8 and the secondary electron 17 to the secondary electron 17 and the desorbed positive ion 18 are deflected to the left and right. Introduced to the secondary electron detection system (post-stage acceleration electrode 12, scintillator 13, etc.),
Perform analysis and observation.

As the parallel plate mesh deflection electrode 5a,
100 mesh with high transmittance was adopted. That is, the parallel plate mesh-made deflection electrode 5a has 100 mesh and has a high transmittance of 80 to 90%. FIG. 3 is a diagram showing a modified example in which a deflection electrode 5b having an electron / ion passage port 5-1 is used in place of the deflection plate 5 as the deflection electrode in FIG. 1 or the parallel plate mesh deflection electrode 5a in FIG. FIG. 4 is a diagram showing the potential distribution of the deflection electrode.

Here, as shown in FIG. 4, a voltage is applied so that the central portion of the deflection electrode has a zero potential so that the excitation primary electron beam 16 is not deflected. That is, the method of applying the voltage to the deflection electrode 5b is the same for all the three modified deflection electrodes, and positive and negative voltages are applied so that the absolute values are equal. As a result, the center of the optical axis was set to zero potential. This is the primary electron beam for excitation 16
This is to eliminate the effect on

FIG. 5 shows an ion / electron extraction mesh electrode 20 as an ion / electron extraction electrode above the sample 7.
It is a figure which shows the example which has. FIG. 6 is a view showing an example in which the perforated plate electrode 20a is used as the ion / electron extraction electrode. FIG. 7 is a diagram showing an example in which the hemispherical mesh electrode 20b is used as the ion / electron extraction electrode.

These ion / electron extraction mesh electrodes 20 (perforated plate electrode 20a, hemispherical mesh electrode 2)
0b is also the same), a variable DC power supply 21 for mesh electrodes is connected, a voltage Vm is applied to the ion / electron extraction mesh electrode 20, and a variable DC power supply 22 for adjusting the sample potential is connected between the sample stage 19 and ground. Then, the voltage Vs is applied to the sample table 19.

By changing the voltage Vm and the voltage Vs, the detection mode of this device can be changed. (1) Desorption positive ion (ESD ion) detection mode The voltages Vs and Vm are changed under the conditions of each electrode potential Vs <0, Vm <0, | Vs | <| Vm |.

Under these conditions, a negative electric field is applied to the surface of the sample (positive ion extraction electric field), and desorbed positive ions can be extracted with high efficiency. That is, the extraction electric field causes the ions to be collected in the central portion (formation of a kind of lens), and the desorption positive ions can be extracted highly efficiently because the neutralization probability is reduced. Therefore,
The detection limit as ESDMS is improved.

(2) ESDMS-SEM simultaneous measurement mode With each electrode potential Vs = V _m = 0, the secondary electrons 17 and the desorbed positive ions 18 which are secondary emitted by irradiation of the primary electron beam 16 for excitation are While retaining its initial energy, they are introduced to a secondary electron detection system and a mass spectrometry system, respectively, and used for observation and analysis. As an effect, observation of an extremely small area and elemental analysis of the same area are possible at the same time.

(3) SEM observation mode With each electrode potential: 0 <Vs <Vm, (1) Vs and Vm can be finely adjusted to observe the potential distribution on the sample surface. This is because if there is a minute potential distribution on the sample surface,
This is due to the change in the initial energy of secondary electrons.
(2) The electric field improves the extraction efficiency of secondary electrons.
As a result, the image quality of the SEM image is significantly improved.

The experimental results will be described below. (1) Detection of Adsorbed Substances on Sample Surface The ESD phenomenon itself has been known for a long time and is a phenomenon in which an adsorbate bound to the surface of a sample is desorbed by electron irradiation with a weak force. Also in this embodiment, ESDMS
By measurement, it was found that contaminants and adsorbed substances on the sample surface can be effectively detected.

For example, FIG. 8 shows an ESDMS (Electron Stimul) on the surface of a silicon wafer as a sample.
aged Destruction Mass Spec
FIG. 8 is a diagram showing a trometry spectrum.
FIG. 8A is a spectrum immediately after opening, and FIG. 8B is a spectrum 3 months after opening. In these figures, the vertical axis represents ionic strength (CPS) and the horizontal axis represents mass number (m / z).

As shown in FIG. 8 (a), H
[M / z (mass number): 1], O [16], H ₂ O [1
8] etc. are observed, but as shown in FIG. 8 (b), contamination progressed three months after opening, and many adsorbed substances were observed. Such changes are clearly visible in ESDMS, but indistinguishable in SIMS.

FIG. 9 is a diagram showing SIMS spectra thereof, FIG. 9 (a) is a spectrum immediately after opening, and FIG. 9 (b) is a spectrum three months after opening. As is clear from these figures, SIMS immediately after opening and for 3 months after opening
The difference cannot be confirmed from the spectrum.
Since SIMS hits the sample surface with ions that are much heavier than electrons, the sample surface material is easily destroyed, and the spectrum is usually noisy in this way, and it is impossible to know the material present on the sample surface from the spectrum. Is.

(2) Detection of Substrate Constituents Conventionally, the ESD has been generally used mainly for analysis of adsorbed materials using an electron beam of several to several tens eV. Here, it was confirmed that, when an electron beam of 3 keV was used, desorption detection of not only the material adsorbed on the sample surface but also the substance constituting the substrate was detected. FIG. 10 shows various spectra on the surface of a copper plate as a sample, FIG. 10 (a) is an ESDMS spectrum, FIG. 10 (b) is a SIMS spectrum, and FIG.
(C) is ESDMS spectrum (e-current:> a).

As is clear from these figures, FIG.
In the SIMS spectrum shown in (b), Cu ⁺ ions (6
3, 65) is detected, but it is buried in many other fragment peaks. In the ESDMS spectrum, when the portion with weak beam brightness in the electron beam spot is used, only the sample surface adsorbate is detected as shown in FIG. 10A, but when the portion with the strongest beam brightness is used, As shown in FIG. 10 (c), Cu ⁺ ions were detected in addition to the adsorbate on the sample surface.

Therefore, similarly, the irradiation area of the electron beam is adjusted, and the silicon wafer, the gallium arsenide wafer,
When the ESDMS measurement is performed on the silver plate, the result is as shown in FIG. That is, FIG. 11A shows the ESD of the silicon wafer.
MS spectrum, FIG. 11 (b) is ESDMS spectrum of gallium arsenide wafer, and FIG. 11 (c) is ESDM of silver plate.
It is an S spectrum.

As shown in FIG. 11A, in the ESDMS spectrum of the silicon wafer, Si ⁺ (28, 29,
30), as shown in FIG. 11B, in the EDSMS spectrum of the gallium arsenide wafer, Ga ⁺ (69,7
As shown in 1) and FIG. 11C, Ag ⁺ (107, 109) could be detected in the EDSMS spectrum of the silver plate.

(3) Time Dependency Analysis of ultra-thin layers such as monolayers (monoatomic layers) is becoming particularly important in recent years when device miniaturization is becoming more and more important, but SIMS causes immediate sputtering. Therefore, it is impossible. However, ESDMS can measure such an ultra-thin layer.

As shown in FIG. 12, GaAs (100)
Is a sample in which Ga layers 31 and As layers 32 are alternately stacked one by one. FIG. 13 shows a change in ion intensity when continuously irradiated with ions (O ₂ ⁺ ) or electron beams. Here, FIG. 13 (a) shows the change in the EDMS ion intensity, and FIG. 13 (b) shows the change in the SIMS ion intensity. In these figures, the vertical axis represents relative ionic strength and the horizontal axis represents time (minutes). In both spectra, Ga ⁺ and As ^{+ of the} constituent atoms of the substrate are shown.
In addition to H ⁺ , O ⁺ , F ⁺ , Na adsorbed on the substrate
⁺ Etc. are observed.

In the case of ion irradiation (60 minutes) of FIG. 13B, the adsorbates H ⁺ , F ⁺ , Na ^+, etc. are rapidly reduced by ion sputtering, but the substrate elements Ga ⁺ , As ^+.
Indicates a constant intensity. This is because SIMS detects not only the outermost surface layer but also ions from lower layers. On the other hand, in the case of electron irradiation shown in FIG.
In spite of continuous irradiation for a long time of 0 minutes (about 16.7 hours), the adsorbates have almost constant intensity, but Ga ⁺
Is gradually decreasing. This shows how Ga atoms are gradually desorbed and reduced from the Ga monoatomic layer of the outermost surface layer by electron irradiation. In ESDMS, the top 1
Since it is considered that the signal from the ~ 2 monoatomic layer is detected, it can be said that the change in the depth direction can be almost ignored even if the irradiation is continued for a long time.

FIG. 14 is a diagram showing the time change of the B ion intensity obtained by the ESDMS measurement for the sample in which B is ion-implanted in Si. FIG. 14 (a) shows the B ion signal integrated for 5 seconds. The intensity is small at any time, and the intensity at each time of a, b, c, d, h, f, f varies greatly. To do. On the other hand, in FIG.
(B) shows the case of integration for 100 seconds. Not only did the intensity increase by about two digits, but the intensity fluctuations such as a, b, c, and d became small, and stable signals could be obtained. .

The effect of changing the current is illustrated in FIG. 10 as described above. That is, when the portion with low brightness in the electron beam irradiation area is used, the adsorbed material on the sample surface is mainly detected as shown in FIG. 10A, but the strong portion as shown in FIG. In addition to the surface adsorbate, Cu ^+, which is a constituent atom of the substrate, can be detected by using. However, this is probably because the sensitivity was simply increased by using the strong part of the beam. That is, if the beam is weak, small-intensity ions cannot be detected.

When the energy is changed and the energy of the electron is small, the adsorbed state shifts from the adsorbed state to the desorbed state due to the electronic excitation of the valence band, and the adsorbed substance moves away from the surface (MGR). model). On the other hand, when the energy of keV or higher is used, the core electrons of the atom can be excited as well, so that Auger transition occurs between the atoms or within the atom, and the electrons escape to form multiple positive ions on the surface. , It may be detached from the surface by the repulsive force (KF model).

That is, the characteristic of this ESDMS is usually 1 k in the conventional ESD (electron stimulated desorption) phenomenon.
While the adsorbate on the sample surface was detected at a low energy of eV or less, by using an electron beam having a high energy enough to excite core electrons, the constituent elements of the substrate can be desorbed and detected. it can. Therefore, it is conceivable that if the energy of electrons is changed, that is, only when the sample surface adsorbates at low (several tens to several hundreds eV), and if it is high (up to keV), the constituent elements of the substrate are also detected. As a result, such a sample surface analyzer does not exist in the conventional analysis technique, and its effect is remarkable.

From the above results, the features of the ESDMS spectrum are as follows. (A) Elemental analysis of the adsorbate on the outermost surface of the sample and the monoatomic layer of the substrate is possible. (B) Microanalysis is possible by integrating the signals. (C) The spectrum is essentially noiseless and can be made highly sensitive.

(D) By changing the current and energy of the electron beam, the adsorbed substance and the substrate constituent substance can be detected separately. And so on. It should be noted that the present invention is not limited to the above embodiment, and various modifications can be made based on the gist of the present invention, and these are not excluded from the scope of the present invention.

[0045]

As described above in detail, according to the present invention, (1) the positions of the secondary electron detection system and the mass analysis system are arranged above the objective lens, and the secondary electrons and ESD ions are Since the detection is performed above the objective lens, the focal length of the objective lens can be shortened compared to the case where the objective lens is arranged between the sample and the objective lens.
(tance) becomes shorter, the spot of the electron beam can be narrowed down, and the aberration can also be reduced.

Therefore, the resolution of the SEM can be improved. In addition, this arrangement allows the secondary ions and the ESD ions to be extracted with a large solid angle in the direction of the primary electron beam having a high emission distribution thereof, thereby improving sensitivity. In fact, with such an arrangement, the resolution of the secondary electron image and the ESD ion image was remarkably improved, and the sensitivity was improved about 2.4 times in the micro area analysis.

(2) The morphological observation and elemental analysis of the same region can be performed simultaneously. (3) A high-resolution surface shape image and an elemental image in the same visual field can be simultaneously observed by SEM. Moreover, as shown in the prior art, the elemental image distribution of all the elements including H, which has been conventionally considered difficult, can be observed in the same visual field in combination with the SEM image observation.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a multi-functional sample surface analyzer according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a modification in which a parallel plate mesh deflection electrode is used instead of the deflection plate as the deflection electrode in FIG.

3 is a diagram showing a modified example in which a deflection electrode having electron and ion passage holes is used in place of the deflection plate of FIG. 1 and the parallel plate mesh deflection electrode of FIG.

FIG. 4 is a diagram showing a potential distribution of the deflection electrode of FIG.

FIG. 5 is a diagram showing an example in which an ion / electron extraction mesh electrode as an ion / electron extraction electrode is provided above a sample of the multifunctional sample surface analysis device according to the first embodiment of the present invention.

FIG. 6 is a diagram showing an example of using a perforated plate electrode as an ion / electron extraction electrode of the multifunctional sample surface analysis device according to the first embodiment of the present invention.

FIG. 7 is a diagram showing an example of using a hemispherical mesh electrode as an ion / electron extraction electrode of the multi-functional sample sample surface analysis apparatus according to the first embodiment of the present invention.

FIG. 8 is a diagram showing an EDSMS spectrum on the surface of a silicon wafer as a sample showing an example of the present invention.

FIG. 9 is a diagram showing a SIMS spectrum of a sample showing an example of the present invention.

FIG. 10 is a diagram showing various spectra on the surface of a copper plate as a sample showing an example of the present invention.

FIG. 11 is a diagram showing an ESDMS measurement result for a silicon wafer, a gallium arsenide wafer, and a silver plate showing an example of the present invention.

FIG. 12 is a schematic view of a GaAs sample showing an example of the present invention.

FIG. 13 is a diagram showing a change in ion intensity when a GaAs sample showing an example of the present invention is continuously irradiated with ions (O ₂ ⁺ ) or an electron beam.

FIG. 14 is a diagram showing a time change of B ion intensity obtained by ESDMS measurement of a sample in which B is ion-implanted into Si showing an example of the present invention.

[Explanation of symbols]

 1 Electron Gun 2 Aperture 3 Condenser Lens 4 Scanning Deflection Electrode 5 Deflection Plate as Deflection Electrode 5a Parallel Plate Mesh Deflection Electrode 5b Deflection Electrode 5-1 Electron / Ion Passage Port 6 Objective Lens 7 Sample 8 Quadrupole Mass Spectrometer 9 CPU (Central Processing Unit) 10 Scanning Power Supply 11 Ion Image CRT 12 Rear Accelerator Electrode 13 Scintillator 14 Photomultiplier 15 Electronic Image CRT 16 Excitation Primary Electron Beam 17 Secondary Electron 18 Desorption Positive Ion (ESD Ion) 19 Sample table 20 Ion / electron extraction mesh electrode 20a Perforated plate electrode 20b Hemispherical mesh electrode 21 Variable DC power supply for mesh electrode 22 Variable DC power supply for sample potential adjustment 31 Ga layer 32 As layer

Claims (15)

[Claims] 1. An electron gun for obtaining (a) an excitation primary electron beam, (b) at least a condenser lens and an objective lens for focusing the primary electron beam from the electron gun, and (c) the primary electron. Means for generating desorbed positive ions and a secondary electron beam by irradiating the sample with the beam, and (d)
Means for guiding the desorbed positive ions and the secondary electron beam to the upper part; (e) a deflection electrode for distributing the desorbed positive ions and the secondary electron beam, which are guided to the upper part, by utilizing the polarity difference between them.
An electron beam detection system for detecting the secondary electron beam,
(G) A multi-functional sample surface analyzer including a desorption positive ion detection system for detecting the desorption positive ions. 2. The multifunctional sample surface analysis device according to claim 1, wherein the deflection electrode is a deflection plate. 3. The multi-functional sample surface analyzer according to claim 1, wherein the deflection electrode is a parallel plate mesh deflection electrode. 4. The multifunctional surface analyzer according to claim 1, wherein the deflection electrode is a deflection plate with an opening. 5. The multifunctional sample surface analyzer according to claim 1, wherein an ion / electron extraction electrode is arranged above the sample. 6. The multifunctional sample surface analysis device according to claim 5, wherein the ion / electron extraction electrode is a mesh electrode. 7. The multifunctional sample surface analyzer according to claim 5, wherein the ion / electron extraction electrode is a perforated plate electrode. 8. The multifunctional sample surface analysis device according to claim 5, wherein the ion / electron extraction electrode is a hemispherical mesh electrode. 9. The multi-functional sample surface analyzer according to claim 5, 6, 7 or 8, wherein the desorption positive ion detection mode is set by applying a negative voltage to the ion / electron extraction electrode. Functional sample surface analyzer. 10. The multifunctional sample surface analysis device according to claim 5, 6, 7 or 8, wherein the secondary electron detection mode is set by applying a positive voltage to the ion / electron extraction electrode. Sample surface analyzer. 11. The multifunctional sample surface analyzer according to claim 1, wherein the multifunctional sample surface analyzer detects an adsorbed substance on the sample surface. 12. The multifunctional sample surface analyzer according to claim 1, which detects a constituent substance of the sample. 13. The multifunctional sample surface analyzer according to claim 1, wherein the multifunctional sample surface analyzer measures the monoatomic layer of the sample. 14. The multi-functional sample surface analyzer according to claim 1, wherein the micro-analysis is performed by integrating detection signals. 15. The multifunctional sample surface analysis device according to claim 1, wherein the adsorption substance and the constituent substance of the sample are distinguished and detected by changing the current and energy of the primary electron beam. .