JPH09298343A - Gallium nitride based compound semiconductor light emitting device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the efficiency of an inner current restriction type and ridge waveguide type GaN compd. semiconductor light emitting devices by forming a dry etching stop layer of the same conductivity type as that of a clad layer on an active layer. SOLUTION: A low-resistance n-type 6H-SiC (0001) substrate 1 is set on a susceptor of a MOCVD apparatus which treats its surface and grows an n-type GaN buffer layer 2 on the substrate 1, an n-type AlGaN clad layer 3 on this buffer layer 2, a nondoped InGaN active layer 4, Mg-doped AlGaN clad layer 5, a Mg-doped InN etch stop layer 6 and an n-type GaN inner current restriction layer 7. The dry etching stop layer uses InN and its film thickness is most pref. 10-50 angstroms.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gallium nitride-based compound semiconductor light emitting device capable of emitting light in a blue region to an ultraviolet region and a manufacturing method thereof.

[0002]

2. Description of the Related Art In manufacturing an internal current confinement type and a ridge waveguide type compound semiconductor light emitting device, various compound semiconductor layers are precisely etched to a required thickness or a required growth layer surface is exposed. Therefore, it is necessary to selectively etch.

FIG. 19 shows a schematic sectional view of a conventional ridge structure type gallium nitride compound semiconductor laser. On the sapphire substrate 100, a GaN buffer layer 101, n-type Ga
N layer 102, n-type In _0.05 Ga _0.95 N cladding layer 10
3, n-type Al _0.05 Ga _0.95 N cladding layer 104, n-type G
aN layer 105, InGaN multiple quantum well active layer 106,
p-type Al _0.2 Ga _0.8 N layer 107, p-type GaN layer 108,
p-type Al _0.05 Ga _0.95 N cladding layer 109, p-type GaN
A contact layer 110 is laminated, and then p-type Al _0.05 G
a _0.95 N cladding layer 109, p-type GaN contact layer 1
10 is etched into a ridge shape, and an insulator film 111 made of SiO _{2 is} further formed. Finally, p-type electrode 1
0 and n-type electrodes 11 are formed. A gallium nitride-based compound semiconductor laser having such a structure is described in Appl.
Phys. Lett. 69 (10), 2 Septem
ber 1996 pp1477-1479.

FIG. 20 is a schematic sectional view of a conventional gallium nitride compound semiconductor laser having a current constriction structure. On the sapphire substrate 200, the GaN buffer layers 201, n
-Type GaN layer 202, n-type AlGaN cladding layer 203,
Non-doped InGaN active layer 204, p-type AlGaN cladding layer 205, and GaN laminated in the order of n / p / n-type
The current blocking layer 206 is sequentially stacked to form the GaN current blocking layer 20.
A stripe groove is formed in the groove 6, and the p-type GaN contact layer 207 is regrown so as to fill the groove. Next, a p-type electrode 10 and an n-type electrode 11 are formed to produce a gallium nitride-based compound semiconductor laser. A gallium nitride-based compound semiconductor laser having such a structure is described in JP-A-8-107247.

[0005]

In the case of etching a GaAs type compound semiconductor layer, a wet etching method which is excellent in selectivity is usually used, but in the case of a GaN type compound semiconductor layer, there is no suitable etching solution. Therefore, dry etching is usually performed. However, it is difficult to obtain sufficient etching selectivity with respect to the GaN-based compound semiconductor layer by dry etching, and it is difficult to manufacture the internal current confinement type and ridge waveguide type semiconductor lasers with good reproducibility.

More specifically, when the ridge waveguide type gallium nitride based compound semiconductor laser shown in FIG. 19 is manufactured, p-type Al _0.05 Ga is formed by dry etching.
_{When processing the 0.95} N clad layer and the p-type GaN contact layer into a ridge shape, it is necessary to stop etching in the middle of the p-type Al _0.05 Ga _0.95 N clad layer and leave an appropriate film thickness. However, it is very difficult to control etching with a proper film thickness.

Further, when the gallium nitride compound semiconductor laser having the current confinement structure shown in FIG.
Since the aN current blocking layer and the p-type AlGaN cladding layer cannot be etched with good selectivity, it is difficult to control the etching to a high degree to expose the surface of the p-type cladding layer. In the case of the current constriction type, with the groove formed in a stripe shape, it is re-introduced into the MOCVD apparatus, and p is filled so as to fill the stripe groove.
P-type GaN for regrowth of the p-type GaN contact layer
The regrowth interface between the contact layer and the p-type AlGaN cladding layer increases the resistance and increases the series resistance of the gallium nitride-based compound semiconductor laser, which reduces the driving current and the reliability of the gallium nitride-based compound semiconductor laser.

Therefore, the present invention provides a gallium nitride-based compound semiconductor light-emitting device, which is an efficient gallium nitride-based compound semiconductor light-emitting device of internal current confinement type and ridge waveguide type, and has a good reproducibility. The purpose is to provide.

[0009]

[Means for Solving the Problems] The present invention has been made in order to solve the above-mentioned problems, and includes ECR-RIBE (reactive ion beam etching method utilizing electron cyclotron resonance).
Hereinafter referred to as the ECR-RIBE method. ) By using dry etching technology and selecting etching conditions, it becomes possible to selectively etch gallium nitride-based compound semiconductors.

According to the present invention, Al _u In _v Ga _1-uv N (0 ≦ 0 is used as a dry etch stop layer on the second cladding layer.
By using u, 0 <v, u + v ≦ 1), further reducing the film thickness, and etching by the ECR-RIBE method, internal current confinement type and ridge waveguide type semiconductor lasers were realized.

Most preferably, InN is used as the dry etch stop layer and the thickness thereof is 10 to 50 Å.

That is, in the device structure of the internal current confinement type gallium nitride based semiconductor laser, Al _u In _{v is provided} between the second clad AlGaN layer and the internal current confinement GaN and AlGaN layers.
The device structure in which the Ga _1-uv N (0 ≦ u, 0 <v, u + v ≦ 1) etch stop layer is inserted makes it possible to manufacture an internal current confinement type gallium nitride based semiconductor laser or a light emitting device. In a device structure of a ridge waveguide type gallium nitride based semiconductor laser, Al _u In _v Ga _{1-u- v} N (0
≦ u, 0 <v, u + v ≦ 1) With the device structure in which the etch stop layer is inserted, a ridge waveguide type gallium nitride based semiconductor laser or a light emitting device can be manufactured.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail based on specific embodiments.

(Embodiment 1) FIG. 1 is a schematic sectional view of a gallium nitride compound semiconductor laser manufactured according to an embodiment of the present invention. A metal-organic compound vapor phase epitaxy method (hereinafter referred to as MOCV) is used to fabricate a gallium nitride-based compound semiconductor laser.
D method) and low resistance 6H-SiC (000
1) Substrate, ammonia NH ₃ as a group V raw material, trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TM) as a group III raw material
In), biscyclopentadienyl magnesium (Cp ₂ Mg) as a p-type impurity, monosilane (SiH ₄ ) as an n-type impurity, and H ₂ and N as carrier gases.
_{Use 2} .

A detailed description will be given with reference to FIGS. 5 (1) to 5 (5). Low resistance n-type 6H-
The SiC (0001) substrate 1 is introduced onto the susceptor of the MOCVD apparatus, the substrate temperature is raised to about 1200 ° C., and surface treatment is performed. Next, low resistance n-type 6H-SiC (000
1) The substrate temperature of the substrate 1 is lowered to about 1000 ° C., and n-type GaN is formed on the low-resistance n-type 6H-SiC (0001) substrate 1.
The buffer layer 2 has a thickness of about 0.5 to 1 μm (eg, 0.5 μm).
m), and then an n-type Al _0.1 Ga _0.9 N cladding layer 3 is grown on the n-type GaN buffer layer 2 by about 0.7 to 1 μm (for example, 0.7 μm), and the substrate temperature is 800 to 85.
Non-doped In
_0.15 Ga _0.85 N active layer 4 of 50 to 800 Å (for example, 50
Å) After the growth, the substrate temperature is raised to about 1000 ° C. The Mg-doped Al _0.1 Ga _0.9 N cladding layer 5 is added to 0.1 to 0.1%.
Grows about 0.3 μm (for example, 0.1 μm), and
The substrate temperature is lowered to about 800 to 850 ° C. (for example, 800 ° C.) to grow the Mg-doped InN etch stop layer 6 by 30 Å, and the substrate temperature is raised to about 1000 ° C. to n-type GaN.
The internal current confinement layer 7 is grown to 0.5 μm (FIG. 5).
(1)).

Once the wafer is taken out of the growth chamber, n
SiO _x , SiN _x or a resist mask 13 is formed on the n-type GaN internal current confinement layer 7, and Si on the n-type GaN internal current confinement layer 7 is formed by using ordinary photolithography.
A part of O _x , SiN _x or the resist mask 13 is removed in a stripe shape (FIG. 5 (2)).

This wafer was introduced into an ECR-RIBE apparatus for dry etching, and microwave 2.4 was used.
5 GHz, microwave voltage 200 W, reaction chamber pressure 1 mT
orr, self-bias voltage of about 140 (-V), gas type B
N-type G under the conditions of Cl ₃ / Ar or CCl ₂ F ₂ / Ar
The aN internal current confinement layer 7 is etched until the surface of the Mg-doped InN etch stop layer 6 is exposed (FIG. 5).
(3)). Under the above conditions, the GaN layer is etched, but the InN layer is not etched.
Etching is automatically stopped on the surface of the doped InN etch stop layer 6.

Although the etching rate increases as the self-bias voltage increases, since the etching start voltage is 50 V for the GaN layer and 150 V for the InN layer, the preferable range of the self-bias voltage is 50 V or more and 150 V or more.
Is less than. Further, as the gas species, SiCl ₄ can also be used.

After removing the resist mask 13 with a hydrofluoric acid-based etching solution or an organic solvent, the wafer is again MO-removed.
It is introduced on the susceptor of the CVD apparatus and the second crystal growth is performed. The substrate temperature is raised to about 1000 ° C., the Mg-doped Al _0.1 Ga _0.9 N cladding layer 8 is about 0.7 to 1 μm (for example, 0.7 μm), and the Mg-doped GaN contact layer 9 is about 0.5 to 1 μm (for example, 0 μm). 0.5 μm) (FIG. 5 (4)).

Next, the wafer is taken out from the MOCVD apparatus and subjected to thermal annealing at 700 ° C. in an N ₂ atmosphere to change the Mg-doped layer into p-type. On the p-type GaN contact layer 9, an electrode 10 for p-type, low resistance n-type 6H-SiC
The n-type electrode 11 is formed on the (0001) substrate 1 (see FIG. 5).
(5)).

In this embodiment, the film thickness of the InN etch stop layer is 30 Å, but it may be in the range of 10 to 50 Å. If the film thickness exceeds 50 Å, the laser light absorption by this etch stop layer increases sharply and the efficiency of laser output deteriorates. On the other hand, if the thickness is less than 10Å, it is difficult to control the film thickness during film formation, and the film does not play a sufficient role as a stop layer during etching. Therefore, 10 to 50Å is preferable.

(Embodiment 2) FIG. 2 is a schematic sectional view of a gallium nitride-based compound semiconductor laser manufactured according to an embodiment of the present invention. A metal-organic compound vapor phase epitaxy method (hereinafter referred to as MOCVD) is used to manufacture a gallium nitride compound semiconductor laser.
Method) and Sapphire (0001) as a substrate
Substrate, ammonia NH ₃ as V group raw material, trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TMI) as III group raw material
n), biscyclopentadienyl magnesium (Cp ₂ Mg) as a P-type impurity, monosilane (SiH ₄ ) as an N-type impurity, and H ₂ and N ₂ as carrier gases.
Is used. A detailed description will be given based on FIGS. 6 (1) to 6 (6).

Since the first crystal growth is performed, the Sapph
The ire (0001) substrate 20 is introduced onto the susceptor of the MOCVD apparatus, the substrate temperature is raised to about 1200 ° C., and the surface treatment is performed. Next, the substrate temperature of the Sapphire (0001) substrate 20 is set to about 500 to 650 ° C. (for example, 55
The temperature is lowered to 0 ° C.), the GaN-based buffer layer 21 is 50 Å to 2 μm (for example, 500 Å) on the Sapphire (0001) substrate 20, and then the substrate temperature is raised to about 1000 ° C. to reduce the n-type GaN buffer layer 2 to 0. The n-type Al _0.1 Ga _0.9 N cladding layer 3 is grown on the n-type GaN buffer layer 2 to a thickness of 0.7 to 1 μm.
Growth (for example, 0.7 μm) and substrate temperature of 800 to
The temperature is lowered to about 850 ° C. (for example, 820 ° C.) and undoped I
n _0.15 Ga _0.85 N active layer 4 of 50 to 800 Å (for example, 60
Å) After the growth, the substrate temperature is raised to about 1000 ° C. and the Mg-doped Al _0.1 Ga _0.9 N cladding layer 5 is grown to 0.1
The substrate temperature is about 800 to 850 ° C. (eg, 810).
(C) to lower the Mg-doped InN etch stop layer 6 to 3
The n-type GaN internal current confinement layer 7 is grown to a thickness of 0.5 μm by growing 0Å and raising the substrate temperature to about 1000 ° C. (FIG. 6).
(1)). The GaN buffer layer 21 is used in this embodiment.
In addition, GaN, AlN or Al ₀ . ₁ Ga _0.9
It may be an N buffer layer.

The wafer is once taken out from the growth chamber, SiO _x , SiN _x or resist mask 13 is formed on the current confinement layer 7, and the photomask is formed on the n-type GaN internal current confinement layer 7 by using ordinary photolithography. Part of the SiO _x , SiN _x or the resist mask 13 is removed on the stripe (FIG. 6 (2)).

This wafer was introduced into an ECR-RIBE apparatus for dry etching, and microwave 2.4 was used.
5 GHz, microwave voltage 200 W, reaction chamber pressure 1 mT
orr, self-bias voltage of about 140 (-V), gas type B
N-type G under the conditions of Cl ₃ / Ar or CCl ₂ F ₂ / Ar
The aN internal current confinement layer 7 is etched until the surface of the Mg-doped InN etch stop layer 6 is exposed (FIG. 6).
(3)). Under the above conditions, the GaN layer is etched, but the InN layer is not etched.
Etching is automatically stopped on the surface of the doped InN etch stop layer 6.

After removing the resist mask 13 with a hydrofluoric acid-based etching solution or an organic solvent, the wafer is again MO-removed.
It is introduced on the susceptor of the CVD apparatus and the second crystal growth is performed. The substrate temperature is raised to about 1000 ° C., the Mg-doped Al _0.1 Ga _0.9 N cladding layer 8 is about 0.7 to 1 μm (for example, 0.8 μm), and the Mg-doped GaN contact layer 9 is used.
Of about 0.5 to 1 μm (for example, 0.6 μm) is grown (FIG. 6 (4)). Next, the wafer is taken out from the MOCVD apparatus and subjected to thermal annealing at 700 ° C. in a N ₂ atmosphere to change the Mg-doped layer into p-type. Next, etching is performed until the surface of the n-type GaN layer 2 is exposed in order to attach an n-type electrode (FIG. 6 (5)).

Furthermore, p is formed on the p-type GaN contact layer 9.
An n-type electrode 11 is formed on the mold electrode 10 and the n-type GaN layer 2 (FIG. 6 (6)).

(Embodiment 3) FIG. 3 is a schematic sectional view of a gallium nitride-based compound semiconductor laser manufactured according to an embodiment of the present invention. A metal-organic compound vapor phase epitaxy method (hereinafter referred to as MOCVD) is used to manufacture a gallium nitride compound semiconductor laser.
Low resistance 6H-SiC (000
1) Substrate, ammonia NH ₃ as a group V raw material, trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TM) as a group III raw material
In), biscyclopentadienyl magnesium (Cp ₂ Mg) as a P-type impurity, monosilane (SiH ₄ ) as an N-type impurity, and H ₂ and N as carrier gases.
_{Use 2} . This will be described in detail based on FIGS. 7 (1) to 7 (5).

In order to perform the first crystal growth, the low resistance n-type 6H-SiC (0001) substrate 1 is introduced onto the susceptor of the MOCVD apparatus, the substrate temperature is raised to about 1200 ° C., and the surface treatment is performed. Next, low resistance n-type 6H-SiC
The substrate temperature of the (0001) substrate 1 is lowered to about 1000 ° C., and the low resistance n-type 6H-SiC (0001) substrate 1 is n-doped.
Type GaN buffer layer 2 is about 0.5 to 1 μm (for example, 1
μm), and then n on the n-type GaN buffer layer 2.
Type Al _0.1 Ga _0.9 N cladding layer 3 is grown to a thickness of about 0.7 to 1 μm (for example, 1 μm), and the substrate temperature is set to 800 to 850 ° C.
Undoped In _0.15 G by lowering the temperature to about 830 ° C.
a _0.85 N active layer 4 is grown to 50 to 800 Å (for example, 55 Å), and then the substrate temperature is raised to about 1000 ° C.
Doped Al _0.1 Ga _0.9 N cladding layer 5 is 0.2 to 0.3.
The substrate temperature is lowered to about 800 to 850 ° C. (eg 840 ° C.), the Mg-doped InN etch stop layer 6 is grown to 30 Å, and the substrate temperature is raised to about 1000 ° C. Mg-doped A
A _0.1 Ga _0.9 N cladding layer 8 is grown to about 0.7 to 0.9 μm (for example, 0.8 μm), and a Mg-doped GaN contact layer 9 is grown to 0.5 μm (FIG. 7 (1)).

Once the wafer is taken out of the growth chamber, M
On the g-doped GaN contact layer 9, SiO _x , SiN _x
Alternatively, a resist mask 13 is formed, and SiO _x , SiN _x or the resist mask 13 on the Mg-doped GaN contact layer 9 or the resist mask 13 is left in a stripe shape by using ordinary photolithography (FIG. 7 (2)).

This wafer was introduced into an ECR-RIBE apparatus for dry etching, and microwave 2.4 was used.
5 GHz, microwave voltage 200 W, reaction chamber pressure 1 mT
orr, self-bias voltage of about 140 (-V), gas type B
Under the condition of Cl ₃ / Ar or CCl ₂ F ₂ / Ar, Mg-doped GaN contact layer 9 and Mg-doped Al _0.1 Ga
_{The 0.9} N cladding layer 8 is dry-etched until the surface of the Mg-doped InN etch stop layer 6 is exposed (FIG. 7).
(3)). Under the above conditions, the GaN layer is etched, but the InN layer is not etched, so that the etching is automatically stopped at the surface of the Mg-doped InN etch stop layer 6.

After removing the resist mask 13 with a hydrofluoric acid-based etching solution or an organic solvent, the wafer is subjected to thermal annealing at 700 ° C. in an N ₂ atmosphere to change the Mg-doped layer into a p-type to form the insulator film 12. Form. (FIG. 7
(4)).

Next, p on the p-type GaN contact layer 9
An n-type electrode 11 is formed on the mold electrode 10 and the low resistance n-type 6H-SiC (0001) substrate 1 (FIG. 7 (5)).

(Embodiment 4) FIG. 4 is a schematic sectional view of a gallium nitride-based compound semiconductor laser manufactured according to an embodiment of the present invention. A metal-organic compound vapor phase epitaxy method (hereinafter referred to as MOCVD) is used to manufacture a gallium nitride compound semiconductor laser.
Method) and Sapphire (0001) as a substrate
Substrate, ammonia NH ₃ as V group raw material, trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TMI) as III group raw material
n), biscyclopentadienyl magnesium (Cp ₂ Mg) as a P-type impurity, monosilane (SiH ₄ ) as an N-type impurity, and H ₂ and N ₂ as carrier gases.
Is used.

A detailed description will be given based on FIGS. 8 (1) to 8 (5). Since the first crystal growth is performed, Sapphire
The (0001) substrate 20 is introduced onto the susceptor of the MOCVD apparatus, the substrate temperature is raised to about 1200 ° C., and surface treatment is performed. Next, the Sapphire (0001) substrate 20
Substrate temperature is about 500-650 ° C (eg 600 ° C)
Then, the GaN-based buffer layer 21 is grown on the Sapphire (0001) substrate 20 to about 500 Å to 2 μm (for example, 2 μm), and then the substrate temperature is raised to about 1000 ° C. N-type Al _0.1
The Ga _0.9 N cladding layer 3 is grown to about 0.7 to 1 μm (for example, 0.7 μm), the substrate temperature is lowered to about 800 to 850 ° C. (for example, 820 ° C.), and undoped In _0.15 Ga is obtained.
_{The 0.85} N active layer 4 is grown to 50 to 800 Å (for example, 65 Å), then the substrate temperature is raised to about 1000 ° C., and the Mg-doped Al _0.1 Ga _0.9 N cladding layer 5 is _0.1 to 0.3 μm.
m (for example, 0.25 μm), further lower the substrate temperature to approximately 800 to 850 ° C. (for example, 835 ° C.), and grow the Mg-doped InN etch stop layer 6 by 30 Å.
The substrate temperature is raised to about 1000 ° C. and Mg-doped Al is added.
_{A 0.1} Ga _0.9 N cladding layer 8 is grown to a thickness of about 0.7 to 0.9 μm (for example, 0.85 μm), and a Mg-doped GaN contact layer 9 is grown to 0.5 μm (FIG. 8 (1)).

Once the wafer is taken out of the growth chamber, M
Resist mask 1 on the g-doped GaN contact layer 9
3 and form the resist mask 1 on the Mg-doped GaN contact layer 9 using ordinary photolithography.
3 is left in a stripe shape (FIG. 8 (2)). In this embodiment, the resist mask 13 is used as a photolithography mask, but SiO _x , SiN _x or the like may be used.

This wafer was introduced into an ECR-RIBE apparatus for dry etching, and microwave 2.4 was used.
5 GHz, microwave voltage 200 W, reaction chamber pressure 1 mT
orr, self-bias voltage of about 140 (-V), gas type B
Under the condition of Cl ₃ / Ar or CCl ₂ F ₂ / Ar, Mg-doped GaN contact layer 9 and Mg-doped Al _0.1 Ga
_{The 0.9} N cladding layer 8 is dry-etched until the surface of the Mg-doped InN etch stop layer 6 is exposed (FIG. 8).
(3)).

Under the above conditions, the GaN layer is etched, but the InN layer is not etched.
Etching is automatically stopped on the surface of the doped InN etch stop layer 6. Next, etching is performed until the surface of the n-type GaN layer 2 is exposed in order to form an n-type electrode.
The resist mask 13 is removed with a hydrofluoric acid-based etching solution or an organic solvent (FIG. 8 (4)).

Next, thermal annealing is performed at 700 ° C. in an N ₂ atmosphere to change the Mg-doped layer to p-type. next,
An insulator film 12 is formed, and a p-type electrode 10 and an n-type electrode 11 are formed on the n-type GaN layer 2 (FIG. 8).
(5)).

(Embodiment 5) FIG. 9 is a schematic sectional view of a gallium nitride compound semiconductor laser manufactured according to an embodiment of the present invention. A metal-organic compound vapor phase epitaxy method (hereinafter referred to as MOCV) is used to fabricate a gallium nitride-based compound semiconductor laser.
D method) and low resistance 6H-SiC (000
1) Substrate, ammonia NH ₃ as a group V raw material, trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TM) as a group III raw material
In), biscyclopentadienyl magnesium (Cp ₂ Mg) as a p-type impurity, monosilane (SiH ₄ ) as an n-type impurity, and H ₂ or N ₂ as a carrier gas.

A detailed description will be given with reference to FIGS. 15 (1) to 15 (5). Low resistance n-type 6H for the first crystal growth
-Introduce the SiC (0001) substrate 1 onto the susceptor of the MOCVD apparatus, raise the substrate temperature to about 1200 ° C, and
Surface treatment with ₂ or N ₂ . Next, low resistance n-type 6H
The substrate temperature of the -SiC (0001) substrate 1 is lowered to about 1000 ° C, and the n-type GaN buffer layer 2 is formed on the low-resistance n-type 6H-SiC (0001) substrate 1 by about 0.5 to 1 µm (for example, 0.8 µm). Then, the n-type Al _0.1 Ga _0.9 N cladding layer 3 is grown on the n-type GaN buffer layer 2 to a thickness of 0.
Approximately 7 to 1 μm (for example, 1 μm) is grown, and the substrate temperature is 8
The temperature is lowered to about 00 to 850 ° C. (for example, 830 ° C.) and the non-doped In _0.15 Ga _0.85 N active layer 4 is set to 100 to 800 Å.
(Eg, 150Å) and then the substrate temperature is set to 1000
The temperature is raised to about 0 ° C. and the Mg-doped Al _0.1 Ga _0.9 N cladding layer 5 is about _0.1 to 0.3 μm (for example, 0.15 μm).
Then, the substrate temperature is lowered to about 800 to 850 ° C. (for example, 840 ° C.), the Mg-doped In _0.5 Ga _0.5 N etch stop layer 30 is grown to 30 Å, and the substrate temperature is set to 100.
The temperature is raised to about 0 ° C. and the n-type GaN internal current confinement layer 7 is reduced to 0.
It grows by 5 μm (FIG. 15 (1)).

Once the wafer is taken out of the growth chamber, n
A resist mask 13 is formed on the n-type GaN internal current confinement layer 7, and n-type GaN is formed using ordinary photolithography.
A part of the resist mask 13 on the internal current confinement layer 7 is removed in a stripe shape (FIG. 15 (2)).

This wafer was introduced into an ECR-RIBE apparatus for dry etching, and microwave 2.4 was used.
5 GHz, microwave voltage 200 W, reaction chamber pressure 1 mT
orr, self-bias voltage of about 100 (-V), gas type B
N-type G under the conditions of Cl ₃ / Ar or CCl ₂ F ₂ / Ar
The aN internal current confinement layer 7 is etched until the surface of the Mg-doped In _0.5 Ga _0.5 N etch stop layer 30 is exposed (FIG. 15C).

Under the above conditions, the GaN layer is etched, but the In _0.5 Ga _0.5 N layer is not etched. Therefore, the Mg-doped In _0.5 Ga _0.5 N etch stop layer 3 is formed.
The etching stops automatically at the 0 surface.

Although the etching rate increases as the self-bias voltage increases, the etching start voltage is 50 V for the GaN layer and 100 V for the In _0.5 Ga _0.5 N layer. Therefore, the preferable range of the self-bias voltage is 50 V or more. It is less than 100V. Regarding the gas species, Si
Cl ₄ can also be used.

After removing the resist mask 13 with a hydrofluoric acid type etching solution or an organic solvent, the wafer is again MO-removed.
It is introduced on the susceptor of the CVD apparatus and the second crystal growth is performed. The substrate temperature is raised to about 1000 ° C., the Mg-doped Al _0.1 Ga _0.9 N cladding layer 8 is about 0.7 to 1 μm (0.75 μm, for example), and the Mg-doped GaN contact layer 9 is about 0.7 to 1 μm (for example, 1 μm). ) It grows (FIG. 15 (4)).

Next, the wafer is taken out from the MOCVD apparatus and subjected to thermal annealing at 700 ° C. in N ₂ atmosphere to change the Mg-doped layer into p-type. On the p-type GaN contact layer 9, an electrode 10 for p-type, low resistance n-type 6H-SiC
An n-type electrode 11 is formed on a (0001) substrate 1 (see FIG. 1).
5 (5)).

In this embodiment, the thickness of the In _0.5 Ga _0.5 N etch stop layer is 30 Å, but it may be in the range of 10 to 50 Å. If the film thickness exceeds 50 Å, the laser light absorption by this etch stop layer increases sharply and the efficiency of laser output deteriorates. On the other hand, if the thickness is less than 10Å, it is difficult to control the film thickness during film formation, and the film does not play a sufficient role as a stop layer during etching. Therefore, 10
~ 50Å is preferred. Further, the non-doped InGaN active layer 4 may be composed of a gallium nitride-based compound semiconductor quantum well active layer or a gallium nitride-based compound semiconductor multiple quantum well active layer in order to reduce the oscillation starting current of the laser device and the light emission efficiency.

(Embodiment 6) FIG. 10 is a schematic sectional view of a gallium nitride-based compound semiconductor laser manufactured according to an embodiment of the present invention. A metal-organic compound vapor phase epitaxy method (hereinafter referred to as MOCV) is used to fabricate a gallium nitride-based compound semiconductor laser.
D method) and Sapphire (000 as a substrate
1) Substrate, ammonia NH ₃ as a group V raw material, trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TM) as a group III raw material
In), biscyclopentadienyl magnesium (Cp ₂ Mg) as a P-type impurity, monosilane (SiH ₄ ) as an N-type impurity, and H ₂ or N ₂ as a carrier gas.

Details will be described with reference to FIGS. 16 (1) to 16 (6). In order to perform the first crystal growth, Sapphir
The e (0001) substrate 20 is introduced onto the susceptor of the MOCVD apparatus, the substrate temperature is raised to about 1200 ° C., and surface treatment is performed. Next, the Sapphire (0001) substrate 2
The substrate temperature of 0 is about 500 to 650 ° C. (for example, 600
℃), Sapphire (0001) substrate 2
GaN-based buffer layer 21 is 50 Å to 2 μm (for example, 650 Å), and then the substrate temperature is raised to about 1000 ° C. to n-type GaN layer 2 to about 0.5 to 1 μm (e.g.
m) grown and n-type Al _0.1 Ga _0.9 on the n-type GaN layer 2
The N-clad layer 3 has a thickness of about 0.7 to 1 μm (for example, 0.7 μm).
m) is grown, the substrate temperature is lowered to about 800 to 850 ° C. (for example, 820 ° C.), and the non-doped In _0.32 Ga _0.68 N active layer 14 is grown to 50 to 800 Å (for example, 50 Å), and then the substrate temperature is set to about 1000 ° C. Temperature is raised to Mg-doped A
l _0.1 Ga _0.9 N cladding layer 5 is grown to about _0.1 to 0.3 μm (for example, 0.25 μm), and the substrate temperature is set to 8
The temperature is lowered to about 00 to 850 ° C. (for example, 820 ° C.) and the Mg-doped In _0.32 Ga _0.68 N etch stop layer 31 is set to 100.
Å It grows and the substrate temperature rises up to about 1000 ℃ and n-type G
The aN internal current confinement layer 7 is grown to 0.5 μm (FIG. 16).
(1)).

The wafer is once taken out from the growth chamber, a resist mask 13 is formed on the current confinement layer 7, and a part of the resist mask 13 is formed on the n-type GaN internal current confinement layer 7 using ordinary photolithography. Are removed on the stripe (FIG. 16 (2)).

This wafer was introduced into an ECR-RIBE apparatus for dry etching, and microwave 2.4 was used.
5 GHz, microwave voltage 200 W, reaction chamber pressure 1 mT
orr, self-bias voltage about 70 (-V), gas type BC
n ₃ / Ar or CCl ₂ F ₂ / Ar under the condition of n-type Ga
The N internal current confinement layer 7 is etched until the surface of the Mg-doped In _0.32 Ga _0.68 N etch stop layer 31 is exposed (FIG. 16C). Under the above conditions, the GaN layer is etched, but the InGaN layer is not. Therefore, the Mg-doped In _0.32 Ga _0.68 N etch stop layer 3
Etching stops automatically on the surface of 1.

After removing the resist mask 13 with the organic solvent, the wafer is again introduced onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed. Substrate temperature is 1000
The temperature is raised to about 0 ° C. and the Mg-doped Al _0.1 Ga _0.9 N cladding layer 8 is about 0.7 to 1 μm (for example, 0.85 μm).
The g-doped GaN contact layer 9 is grown to about 0.5 to 1 μm (for example, 0.6 μm) (FIG. 16 (4)).

Next, the wafer is taken out from the MOCVD apparatus and subjected to thermal annealing at 700 ° C. in N ₂ atmosphere to change the Mg-doped layer into p-type. Next, etching is performed until the surface of the n-type GaN buffer layer 2 is exposed in order to attach an electrode for n-type (FIG. 16 (5)). The p-type electrode 10 is formed on the p-type GaN contact layer 9, and the n-type electrode 11 is formed on the n-type GaN buffer layer 2 (FIG. 16 (6)).

In this embodiment, the thickness of the In _0.32 Ga _0.68 N etch stop layer is 100 Å, but it is 10 to 100 Å.
It is sufficient if it is within the range. If the film thickness exceeds 100 Å, the laser light absorption by this etch stop layer increases rapidly and the laser output efficiency deteriorates. On the other hand, if the thickness is less than 10Å, it is difficult to control the film thickness during film formation, and the film does not play a sufficient role as a stop layer during etching. Therefore, 10-100Å is preferable. Furthermore, undoped In
The GaN active layer 4 may be composed of a gallium nitride-based compound semiconductor quantum well active layer or a gallium nitride-based compound semiconductor multiple quantum well active layer in order to reduce the oscillation starting current of the laser element and to improve the light emission efficiency.

(Embodiment 7) FIG. 11 is a schematic sectional view of a gallium nitride-based compound semiconductor laser manufactured according to an embodiment of the present invention. A metal-organic compound vapor phase epitaxy method (hereinafter referred to as MOCV) is used to fabricate a gallium nitride-based compound semiconductor laser.
D method) and low resistance 6H-SiC (000
1) Substrate, ammonia NH ₃ as a group V raw material, trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TM) as a group III raw material
In), biscyclopentadienyl magnesium (Cp ₂ Mg) as a p-type impurity, monosilane (SiH ₄ ) as an n-type impurity, and H ₂ or N ₂ as a carrier gas.

This will be described in detail with reference to FIGS. 17 (1) to 17 (5). Low resistance n-type 6H for the first crystal growth
-SiC (0001) substrate 1 is introduced onto the susceptor of the MOCVD apparatus, the substrate temperature is raised to about 1200 ° C, and surface treatment is performed. Next, low resistance n-type 6H-SiC (000
1) The substrate temperature of the substrate 1 is lowered to about 1000 ° C., and n-type GaN is formed on the low-resistance n-type 6H-SiC (0001) substrate 1.
The buffer layer 2 is grown to about 0.5 to 1 μm (for example, 1 μm), and then n-type Al is formed on the n-type GaN buffer layer 2.
_{The 0.1} Ga _0.9 N cladding layer 3 is grown to about 0.7 to 1 μm (for example, 0.7 μm), the substrate temperature is lowered to about 800 to 850 ° C. (for example, 820 ° C.), and undoped In _0.15 Ga is used.
_{The 0.85} N active layer 4 is grown to 50 to 800 Å (for example, 50 Å), and then the substrate temperature is raised to about 1000 ° C. to form the Mg-doped Al _0.1 Ga _0.9 N cladding layer 5 to 0.2 to 0.3 μm.
m (for example, 0.25 μm), the substrate temperature is further lowered to approximately 800 to 850 ° C. (for example, 850 ° C.), and the Mg-doped In _0.9 Al _0.05 Ga _0.05 N etch stop layer 32 is grown by 30 Å to increase the substrate temperature. The temperature was raised to about 1000 ° C. and the Mg-doped Al _0.1 Ga _0.9 N cladding layer 8 was reduced to 0.
About 7 to 0.9 μm (for example, 0.8 μm), the Mg-doped GaN contact layer 9 is grown to 0.5 μm (FIG. 17).
(1)).

Once the wafer is taken out of the growth chamber, M
Resist mask 1 on the g-doped GaN contact layer 9
3 is formed, and the resist mask 13 on the Mg-doped GaN contact layer 9 is left in a stripe shape by using ordinary photolithography (FIG. 17 (2)).

This wafer was introduced into an ECR-RIBE apparatus for dry etching, and microwave 2.4 was used.
5 GHz, microwave voltage 200 W, reaction chamber pressure 1 mT
orr, self-bias voltage of about 140 (-V), gas type B
Under the condition of Cl ₃ / Ar or CCl ₂ F ₂ / Ar, Mg-doped GaN contact layer 9 and Mg-doped Al _0.1 Ga
_{The 0.9} N cladding layer 8 is Mg-doped In _0.9 Al _0.05 Ga
Dry etching is performed until the surface of the _0.05 N etch stop layer 32 is exposed (FIG. 17C).

Under the above conditions, the GaN layer is etched, but the InAlGaN layer is not etched, so that the etching automatically stops at the surface of the Mg-doped In _0.9 Al _0.05 Ga _0.05 N etch stop layer 32. After removing the resist mask 13 with an organic solvent, the wafer is annealed at 700 ° C. in a N ₂ atmosphere and subjected to thermal annealing.
The doped layer is changed to p-type, and the insulator film 12 is formed.
(FIG. 17 (4)).

Next, p on the p-type GaN contact layer 9
An n-type electrode 11 is formed on the mold electrode 10 and the low-resistance n-type 6H-SiC (0001) substrate 1 (FIG. 17 (5)).

(Embodiment 8) FIG. 12 is a schematic sectional view of a gallium nitride-based compound semiconductor laser manufactured according to an embodiment of the present invention. A metal-organic compound vapor phase epitaxy method (hereinafter referred to as MOCV) is used to fabricate a gallium nitride-based compound semiconductor laser.
D method) and Sapphire (000 as a substrate
1) Substrate, ammonia NH ₃ as a group V raw material, trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TM) as a group III raw material
In), biscyclopentadienyl magnesium (Cp ₂ Mg) as a P-type impurity, monosilane (SiH ₄ ) as an N-type impurity, and H ₂ or N ₂ as a carrier gas.

Detailed description will be made with reference to FIGS. 18 (1) to 18 (5). In order to perform the first crystal growth, Sapphir
The e (0001) substrate 20 is introduced onto the susceptor of the MOCVD apparatus, the substrate temperature is raised to about 1200 ° C., and surface treatment is performed. Next, the Sapphire (0001) substrate 2
The substrate temperature of 0 is about 500 to 650 ° C. (for example, 550
℃), Sapphire (0001) substrate 2
Al _0.1 Ga _0.9 N buffer 21 at 500 Å ~ 2 μm
Growth (for example, 2 μm), and then the substrate temperature is set to 100.
The temperature is raised to about 0 ° C., and n is formed on the n-type GaN buffer layer 2.
Type Al _0.1 Ga _0.9 N cladding layer 3 is grown to a thickness of about 0.7 to 1 μm (for example, 0.7 μm), and the substrate temperature is set to 800 to 85.
The temperature is lowered to about 0 ° C. (for example, 830 ° C.) and undoped In
_0.32 Ga _0.68 N active layer 14 of 10 to 800 Å (for example, 2
Growth, then the substrate temperature is raised to about 1000 ° C. and the Mg-doped Al _0.1 Ga _0.9 N cladding layer 5 is grown to 0.1
.About.0.3 .mu.m (eg 0.3 .mu.m), and the substrate temperature is about 800 to 850.degree. C. (eg 820).
(C) and the Mg-doped AlN etch stop layer 33 is grown to 30 Å, and the substrate temperature is raised to about 1000 ° C.
The g-doped Al _0.1 Ga _0.9 N cladding layer 8 has a thickness of 0.7 to 0.
About 9 μm (for example, 0.75 μm), Mg-doped GaN
The contact layer 9 is grown to 0.5 μm (FIG. 18).
(1)).

Once the wafer is taken out of the growth chamber, M
Resist mask 1 on the g-doped GaN contact layer 9
3 is formed, and the resist mask 13 on the Mg-doped GaN contact layer 9 is left in a stripe shape by using ordinary photolithography (FIG. 18 (2)).

This wafer was introduced into an ECR-RIBE apparatus for dry etching, and microwave 2.4 was used.
5 GHz, microwave voltage 200 W, reaction chamber pressure 1 mT
orr, self-bias voltage of about 140 (-V), gas type B
Under the condition of Cl ₃ / Ar or CCl ₂ F ₂ / Ar, Mg-doped GaN contact layer 9 and Mg-doped Al _0.1 Ga
_{The 0.9} N cladding layer 8 is dry-etched until the surface of the Mg-doped AlN etch stop layer 33 is exposed (FIG. 18 (3)).

Under the above conditions, the GaN layer is etched, but the AlN layer is not etched.
Etching automatically stops at the surface of the doped AlN etch stop layer 33. Next, etching is performed until the surface of the n-type GaN buffer layer 2 is exposed in order to attach an n-type electrode. The resist mask 13 is removed with an organic solvent (FIG. 18 (4)).

Next, thermal annealing is performed at 700 ° C. in an N ₂ atmosphere to change the Mg-doped layer to p-type. next,
An insulator film 12 is formed, and a p-type electrode 10 and an n-type electrode 11 on the n-type GaN layer 2 are formed thereon (FIG. 18).
(5)).

In the present embodiment, the film thickness of the AlN etch stop layer is set to 30Å, but it may be in the range of 10 to 50Å. If the film thickness exceeds 50 Å, the laser light absorption by this etch stop layer increases sharply and the efficiency of laser output deteriorates. On the other hand, if the thickness is less than 10Å, it is difficult to control the film thickness during film formation, and the film does not play a sufficient role as a stop layer during etching. Therefore, 10 to 50Å is preferable.

In the gallium nitride-based compound semiconductor compound laser of the present embodiment, the lower the Al content in the etch stop layer, the lower the operating voltage of the laser that can be driven, and InN is used as the etch stop layer. , Was able to drive the lowest voltage.

(Embodiment 9) FIG. 15 shows a schematic sectional view of a gallium nitride-based compound semiconductor ridge waveguide type embedded laser of the present invention.

The third embodiment is the same as the third embodiment except that the buried layer 40 is provided to fill the ridge side surface and the etch stop layer. Here, the buried layer 40 is a high resistance GaN or Al _0.1 Ga _0.9 N layer, an insulator such as SiO ₂ , Si.
₃ N ₄ , polyimide or the like is used. By providing the burying layer 40, the laser element can be easily mounted on the package and the submount by junction down, the heat dissipation of the laser element can be more efficiently performed, and the gallium nitride compound semiconductor having excellent reliability is provided. A ridge waveguide type embedded laser can be provided. Further, since both sides of the ridge waveguide can be filled with layers having different refractive indexes, the transverse mode can be stabilized.

(Embodiment 10) FIG. 16 shows a schematic sectional view of a gallium nitride compound semiconductor ridge waveguide type embedded laser of the present invention.

The third embodiment is the same as the third embodiment except that the buried layer 40 is provided to fill the side surface of the ridge and the etch stop layer. Here, the buried layer 40 is a high resistance GaN or Al _0.1 Ga _0.9 N layer, an insulator such as SiO ₂ , Si.
₃ N ₄ , polyimide or the like is used. By providing the burying layer 40, the laser element can be easily mounted on the package and the submount by junction down, the heat dissipation of the laser element can be more efficiently performed, and the gallium nitride compound semiconductor having excellent reliability is provided. A ridge waveguide type embedded laser can be provided.

[0074]

According to the present invention, when a part of a current confinement layer made of a gallium nitride based semiconductor is etched in the production of a gallium nitride based compound semiconductor light emitting device, AlG is used.
Since the aInN layer functions as an etch stop layer, the reproducibility of etching is good.

Further, in the production of the gallium nitride compound semiconductor light emitting device, when the gallium nitride compound semiconductor is etched to form the ridge structure, the AlGaInN layer acts as an etch stop layer, so that the etching reproducibility is good.

As described above, it becomes possible to manufacture an internal current confinement type ridge waveguide type gallium nitride compound semiconductor light emitting device.

[Brief description of drawings]

FIG. 1 is a schematic sectional view of a gallium nitride-based current confinement type compound semiconductor laser of the present invention.

FIG. 2 is a schematic sectional view of a gallium nitride-based current confinement type compound semiconductor laser of the present invention.

FIG. 3 is a schematic sectional view of a gallium nitride-based ridge waveguide type compound semiconductor laser of the present invention.

FIG. 4 is a schematic sectional view of a gallium nitride-based ridge waveguide type compound semiconductor laser of the present invention.

FIG. 5 is a schematic diagram of a manufacturing process of a gallium nitride-based current confinement type compound semiconductor laser of the present invention.

FIG. 6 is a schematic diagram of a manufacturing process of a gallium nitride-based current confinement type compound semiconductor laser of the present invention.

FIG. 7 is a schematic diagram of a manufacturing process of a gallium nitride-based ridge waveguide type semiconductor laser of the present invention.

FIG. 8 is a schematic diagram of a manufacturing process of a gallium nitride-based ridge waveguide type semiconductor laser of the present invention.

FIG. 9 is a schematic sectional view of a gallium nitride-based current confinement type compound semiconductor laser of the present invention.

FIG. 10 is a schematic sectional view of a gallium nitride-based current confinement type compound semiconductor laser of the present invention.

FIG. 11 is a schematic sectional view of a gallium nitride-based ridge waveguide type semiconductor laser of the present invention.

FIG. 12 is a schematic sectional view of a gallium nitride-based ridge waveguide type semiconductor laser of the present invention.

FIG. 13 is a schematic sectional view of a gallium nitride-based ridge waveguide type buried semiconductor laser of the present invention.

FIG. 14 is a schematic sectional view of a gallium nitride-based ridge waveguide type buried semiconductor laser of the present invention.

FIG. 15 is a schematic diagram of a manufacturing process of a gallium nitride-based current confinement type compound semiconductor laser of the present invention.

FIG. 16 is a schematic diagram of a manufacturing process of a gallium nitride-based current confinement type compound semiconductor laser of the present invention.

FIG. 17 is a schematic diagram of a manufacturing process of a gallium nitride-based ridge waveguide type compound semiconductor laser of the present invention.

FIG. 18 is a schematic diagram of a manufacturing process of a gallium nitride-based ridge waveguide type compound semiconductor laser of the present invention.

FIG. 19 is a schematic sectional view of a conventional gallium nitride-based ridge waveguide type compound compound semiconductor laser.

FIG. 20 is a schematic sectional view of a conventional gallium nitride-based internal current confinement type compound semiconductor laser.

[Explanation of symbols]

1 Low Resistance n-type 6H-SiC (0001) Substrate 2 n-type GaN Buffer Layer 3 n-type Al _0.1 Ga _0.9 N Cladding Layer 4 Non-doped In _0.15 Ga _0.85 N Active Layer 5, 8 Mg-doped Al _0.1 Ga _0.9 N Cladding Layer 6 Mg-doped InN etch stop layer 7 n-type GaN internal current confinement layer 8 Mg-doped Al _0.15 Ga _0.85 N-clad layer 9 Mg-doped GaN cap layer 10 p-type electrode 11 n-type electrode 12 Insulator film 13 Resist mask 14 Non-doped In _0.32 Ga _0.68 N active layer 20 Sapphire (0001) substrate 21 GaN-based buffer layer 30 In _0.5 Ga _0.5 N etch stop layer 31 In _0.32 Ga _0.68 N etch stop layer 32 In _0.9 Al _0.05 Ga _0.05 N etch stop layer 33 AlN etch stop Layer 40 Embedded layer

Claims (12)

[Claims] 1. A gallium nitride-based compound semiconductor light-emitting device comprising a dry-etch stop layer of the same conductivity type as that of the cladding layer formed on at least the second-conductivity-type cladding layer on the active layer. 2. The dry etch stop layer comprises A
_{l u In v Ga 1-uv} N (0 ≦ u, 0 <v, u + v ≦ 1)
The gallium nitride-based compound semiconductor light-emitting device according to claim 1, wherein 3. The dry etch stop layer comprises I
2. The gallium nitride-based compound semiconductor light emitting device according to claim 1, wherein the dry etch stop layer is made of nN and has a film thickness of 10 to 50Å. 4. A substrate having a first conductivity type, a first conductivity type buffer layer, a first conductivity type clad layer, an active layer formed on the first clad layer, and an active layer on the substrate. A clad layer having a second conductivity type formed on the dry clad layer, a dry etch stop layer having a second conductivity type laminated on the second clad layer, and a layer partially removed on the dry etch stop layer. First conductivity type internal current confinement layer,
A gallium nitride-based compound semiconductor light-emitting device comprising a second-conductivity-type cladding layer and a second-conductivity-type layer. 5. A non-conductivity type substrate, a first buffer layer on the substrate, a second buffer layer having a first conductivity type, a first conductivity type clad layer, and an active layer formed on the first clad layer. A clad layer having a second conductivity type formed on the active layer, a dry etch stop layer having a second conductivity type laminated on the second clad layer, and a dry etch stop layer formed on the dry etch stop layer. A gallium nitride-based compound semiconductor light-emitting device, comprising: a first conductivity type internal current confinement layer, a second conductivity type clad layer, and a second conductivity type layer, which are laminated by removing a portion thereof. 6. A substrate having a first conductivity type, a first conductivity type buffer layer, a first conductivity type clad layer, an active layer formed on the first clad layer, and an active layer on the substrate. A clad layer having a second conductivity type formed on the first clad layer, a dry etch stop layer having a second conductivity type laminated on the second clad layer, and a first layer partially laminated on the dry etch stop layer. A gallium nitride-based compound semiconductor light-emitting device, characterized by being laminated from a two-conductivity type clad layer and a second-conductivity type layer. 7. A non-conductive type substrate, a first buffer layer on the substrate, a second buffer layer having a conductive type, a first conductive type clad layer, and an active layer formed on the first clad layer. A clad layer having a second conductivity type formed on the active layer, a dry etch stop layer having a second conductivity type laminated on the second clad layer, and partially laminated on the dry etch stop layer. A gallium nitride-based compound semiconductor light-emitting device, characterized in that it is laminated from a second conductivity type cladding layer and a second conductivity type contact layer. 8. The dry etch stop layer is Al _u.
In _v Ga _1-uv N (0 ≦ u, 0 <v, u + v ≦ 1), the active layer is In _y Ga _1-y N (0 ≦ y ≦ 1: when y = 0, y ≠
0) and the clad layer is made of Al _x Ga _1-x N (0 ≦ x <1), wherein the gallium nitride-based compound semiconductor light-emitting device according to any one of claims 4 to 6. 9. A first-conductivity-type GaN buffer layer and a first-conductivity-type Al _x Ga _1-x N (0 ≦ 0) on a substrate having the first-conductivity type.
x <1) a step of forming a cladding layer, and In _y Ga _1-y N (0 ≦ y ≦ 1: x = formed on the first cladding layer
When y = 0, an active layer, an Al _x Ga _1-x N (0 ≦ x <1) clad layer having a second conductivity type on the active layer, a first clad layer laminated on the second clad layer A with dual conductivity type
_{l u In v Ga 1-uv} N (0 ≦ u, 0 <v, u + v ≦ 1)
A step of sequentially stacking a dry etch stop layer and a first conductivity type GaN stacked on the dry etch stop layer
And Al _z Ga _1-z N (0 ≦ z <1) current confinement layer with Al
_u In _v Ga _1-uv N (0 ≦ u, 0 <v, u + v ≦ 1) etching up to the dry etch stop layer is included. The gallium nitride-based compound semiconductor light emitting device according to claim 4. Manufacturing method. 10. A non-conductive substrate and Al on the substrate.
N, GaN or Al _w Ga _1-w N (0 <w <1) first buffer layer, GaN second buffer layer having first conductivity type,
A step of forming a first conductivity type Al _x Ga _1-x N (0 ≦ x <1) clad layer, and I formed on the first clad layer
n _y Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer, and Al _x Ga _1-x having the second conductivity type on the active layer
N (0 ≦ x <1) clad layer, Al _u In _v Ga _{1 -uv} N (0 ≦ u, having a second conductivity type on the second clad layer)
0 <v, u + v ≦ 1) a step of sequentially stacking a dry etch stop layer, and a first conductivity type GaN and Al _z Ga _{1 -z} N (0 ≦ z <which are stacked on the dry etch stop layer.
1) The current confinement layer is formed of Al _u In _v Ga _1-uv N (0 ≦ u,
0 <v, u + v ≦ 1) etching to the dry etch stop layer is included, and the method for manufacturing a gallium nitride-based compound semiconductor light-emitting device according to claim 5. 11. A substrate having a first conductivity type, a first conductivity type GaN buffer layer, and a first conductivity type Al _x G on the substrate.
a _1-x N (0 ≦ x <1) forming a clad layer,
In _y Ga _1-y N (0 formed on the first cladding layer
≦ y ≦ 1: y ≠ 0 when x = 0) and an Al _x Ga _1-x N (0 ≦ x <1) having a second conductivity type on the active layer.
A clad layer, Al _u In _v Ga _1-uv N (0 ≦ u, 0 <v, u + v ≦ having a second conductivity type on the second clad layer.
1) A step of sequentially stacking a dry etch stop layer, and a second conductivity type Al _x Ga _1-x N (0 ≦ x <1) cladding layer and a second conductivity type GaN that are stacked on the dry etch stop layer The layer is made of Al _u In _v Ga _1-uv N (0 ≦ u, 0 <
v, u + v ≦ 1) etching to the dry etch stop layer is included, and the method for manufacturing a gallium nitride-based compound semiconductor light emitting device according to claim 6. 12. A non-conductive substrate and Al on the substrate.
N, GaN or Al _w Ga _1-w N (0 <w <1) first buffer layer, GaN second buffer layer having first conductivity type,
A step of forming a first conductivity type Al _x Ga _1-x N (0 ≦ x <1) clad layer, and I formed on the first clad layer
n _y Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer, and Al _x Ga _1-x having the second conductivity type on the active layer
N (0 ≦ x <1) cladding layer, Al _u In _v Ga _1-uv N (0 ≦ u, having a second conductivity type on the second cladding layer
0 <v, u + v ≦ 1) a step of sequentially stacking dry etch stop layers, and a second conductivity type Al _x Ga _1-x N (0 ≦ x <1) cladding layer stacked on the dry etch stop layers And a second conductivity type GaN layer with Al _u In _v Ga _{1 -uv}
8. A method of manufacturing a gallium nitride-based compound semiconductor light emitting device according to claim 7, further comprising the step of etching up to N (0 ≦ u, 0 <v, u + v ≦ 1) dry etch stop layer.