JPH0945757A - Electrostatic chuck - Google Patents
Electrostatic chuckInfo
- Publication number
- JPH0945757A JPH0945757A JP19385095A JP19385095A JPH0945757A JP H0945757 A JPH0945757 A JP H0945757A JP 19385095 A JP19385095 A JP 19385095A JP 19385095 A JP19385095 A JP 19385095A JP H0945757 A JPH0945757 A JP H0945757A
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- ceramic body
- indium
- electrostatic chuck
- adhesive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
(57)【要約】
【課題】セラミック体とベース板をシリコーン接着剤で
接合した静電チャックでは、シリコーン接着剤の熱伝導
率が比較的低いため、接着厚みのバラツキがあるとウェ
ハ等の被吸着物を均一な温度に保つことが困難であっ
た。
【解決手段】内部電極１２を埋設し吸着面１１ａを有す
るセラミック体１１と、ベース板１３とをインジウム又
はインジウム合金の接着層１４で接合して静電チャック
１０を構成する。
(57) Abstract: In an electrostatic chuck in which a ceramic body and a base plate are bonded with a silicone adhesive, the thermal conductivity of the silicone adhesive is relatively low, so if there is a variation in the bonding thickness, the wafer or the like will be covered. It was difficult to keep the adsorbate at a uniform temperature. SOLUTION: An electrostatic chuck 10 is constructed by bonding a ceramic body 11 having an internal electrode 12 embedded therein and having a suction surface 11a and a base plate 13 with an adhesive layer 14 of indium or indium alloy.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば半導体製造
装置においてウェハの固定、矯正、搬送等を行うために
用いられる静電チャックに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck used for fixing, straightening, and carrying a wafer in a semiconductor manufacturing apparatus, for example.
【０００２】[0002]
【従来の技術】静電チャックは半導体製造装置におい
て、被吸着物である半導体ウェハを固定してエッチング
等の加工を行ったり、半導体ウェハを吸着固定して反り
を矯正したり、半導体ウェハを吸着して搬送する工程で
用いられている。2. Description of the Related Art An electrostatic chuck is a semiconductor manufacturing apparatus in which a semiconductor wafer, which is an object to be adsorbed, is fixed to perform processing such as etching, a semiconductor wafer is adsorbed and fixed to correct warpage, and a semiconductor wafer is adhered It is used in the process of transporting.
【０００３】このような静電チャックの構造は、図１に
示すように内部電極１２を埋設したセラミック体１１の
表面を吸着面１１ａとし、このセラミック体１１を金属
製のベース板１３に接合してなるものであった。そし
て、上記内部電極１２と被吸着物２０間に電圧を印加す
ることによって、静電吸着力を発生させ、被吸着物２０
を吸着面１１ａに吸着固定するようになっている。In the structure of such an electrostatic chuck, as shown in FIG. 1, the surface of a ceramic body 11 having an internal electrode 12 embedded therein is used as a suction surface 11a, and the ceramic body 11 is bonded to a metal base plate 13. It was a thing. Then, an electrostatic attraction force is generated by applying a voltage between the internal electrode 12 and the attracted object 20, and the attracted object 20 is generated.
Is sucked and fixed to the suction surface 11a.
【０００４】上記ベース板１３と接合するのは、各種装
置への組付けを容易にするとともに、ベース板１３内に
冷却機構（不図示）を備えてウェハ等の被吸着物２０を
冷却するためであった。この金属製のベース板１３とセ
ラミック体１１の間には、メタライズ、有機接着剤、ガ
ラスなどの接着層１４を介在させて接合するが、温度変
化が生じると金属製のベース板１３とセラミック体１１
との熱膨張差のために、セラミック体１１が割れてしま
うという問題があった。Joining with the base plate 13 is for facilitating the assembling to various devices and for cooling the object to be adsorbed 20 such as a wafer by providing a cooling mechanism (not shown) in the base plate 13. Met. The metal base plate 13 and the ceramic body 11 are bonded to each other with an adhesive layer 14 made of metallization, an organic adhesive, glass or the like interposed therebetween. However, when a temperature change occurs, the metal base plate 13 and the ceramic body 11 are joined. 11
There is a problem that the ceramic body 11 is cracked due to the difference in thermal expansion between
【０００５】そこで、上記ベース板１３としてタングス
テン（Ｗ）、モリブデン（Ｍｏ）、コバール等の低熱膨
張金属を用いて、セラミック体１１との熱膨張差を小さ
くすることが行われている。あるいは、ベース板１３を
アルミニウム（Ａｌ）とし、接着層１４としてシリコー
ン接着剤を用いて熱膨張差を吸収することを本出願人は
提案している。（特開平２−２８７３４４号公報参
照）。Therefore, a low thermal expansion metal such as tungsten (W), molybdenum (Mo) or Kovar is used as the base plate 13 to reduce the difference in thermal expansion from the ceramic body 11. Alternatively, the present applicant proposes that the base plate 13 is made of aluminum (Al) and the adhesive layer 14 is made of a silicone adhesive to absorb the difference in thermal expansion. (See Japanese Patent Laid-Open No. 2-287344).
【０００６】[0006]
【発明が解決しようとする課題】ところが、ベース板１
３としてタングステン又はモリブデンを用いたもので
は、加工性が悪いため内部に冷却機構を設けることが困
難であり、高価であるという問題があった。また、コバ
ールを用いたものでは、熱伝導率が高くないため、ウェ
ハ等の被吸着物２０の冷却効果が悪いという問題点があ
った。However, the base plate 1
In the case of using tungsten or molybdenum as 3, there is a problem that it is difficult to provide a cooling mechanism inside because of poor workability and it is expensive. Further, in the case of using Kovar, there is a problem that the effect of cooling the adsorbed material 20 such as a wafer is poor because the thermal conductivity is not high.
【０００７】一方、セラミック体１１とベース板１３を
シリコーン接着剤からなる接着層１４で接合したもので
は、シリコーン接着剤の熱伝導率が比較的低いため、接
着厚みのバラツキがあるとウェハ等の被吸着物２０を均
一な温度に保つことが困難であった。また、ウェハ処理
工程の高速化に伴い、例えばプラズマエッチングにおけ
る高電力化が要求されるが、シリコーン接着剤を用いた
ものではウェハを充分に冷却することができないという
問題点があった。On the other hand, in the case where the ceramic body 11 and the base plate 13 are joined by the adhesive layer 14 made of a silicone adhesive, the thermal conductivity of the silicone adhesive is relatively low, so that if the adhesive thickness varies, a wafer or the like may be present. It was difficult to keep the adsorbent 20 at a uniform temperature. Further, as the wafer processing speed is increased, higher power is required for plasma etching, for example, but there is a problem that the wafer cannot be sufficiently cooled by using a silicone adhesive.
【０００８】[0008]
【課題を解決するための手段】そこで本発明は、内部電
極を埋設し吸着面を有するセラミック体と、ベース板と
をインジウム又はインジウム合金からなる接着層を介し
て接合し、静電チャックを構成したものである。Therefore, according to the present invention, an electrostatic chuck is constructed by bonding a ceramic body having an internal electrode embedded therein and having a suction surface to a base plate via an adhesive layer made of indium or an indium alloy. It was done.
【０００９】即ち、インジウム又はインジウム合金は、
熱伝導率が高く、かつ柔軟性のある金属であるため、ウ
ェハ等の被吸着物に加わった熱を均一かつ急速に放出で
きるとともに、セラミック体とベース板との熱膨張差を
吸収することができる。That is, indium or indium alloy is
Since it is a flexible metal with high thermal conductivity, it can uniformly and rapidly release the heat applied to the object to be adsorbed such as a wafer, and also absorb the difference in thermal expansion between the ceramic body and the base plate. it can.
【００１０】[0010]
【発明の実施の形態】以下本発明の実施形態を図によっ
て説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings.
【００１１】図１に示すように、本発明の静電チャック
１０の構造は、内部電極１２を埋設したセラミック体１
１の表面を吸着面１１ａとし、このセラミック体１１の
裏面をインジウム又はインジウム合金から成る接着層１
４を介して金属製のベース板１３に接合したものであ
る。そして、電源１５より上記内部電極１２と被吸着物
２０間に電圧を印加し、静電吸着力を発生させて被吸着
物２０を吸着面１１ａに吸着固定するようになってい
る。また、ウェハを冷却するためにベース板１３の内部
に冷却水を循環させるような冷却機構（不図示）を備え
ることもできる。As shown in FIG. 1, the structure of the electrostatic chuck 10 of the present invention is such that the ceramic body 1 in which the internal electrodes 12 are embedded.
The front surface of the ceramic body 11 is an adsorption surface 11a, and the back surface of the ceramic body 11 is an adhesive layer 1 made of indium or an indium alloy.
It is joined to the metal base plate 13 via 4. Then, a voltage is applied from the power source 15 between the internal electrode 12 and the object to be adsorbed 20 to generate an electrostatic adsorption force to adsorb and fix the object to be adsorbed 20 on the adsorption surface 11a. Further, a cooling mechanism (not shown) for circulating cooling water inside the base plate 13 for cooling the wafer may be provided.
【００１２】上記セラミック体１１は、アルミナ（Ａｌ
2 Ｏ3 ）又は窒化アルミニウム（ＡｌＮ）等を主成分と
するセラミックス、あるいはアルミナの単結晶体である
サファイア等から成っており、内部電極１２はタングス
テン等の金属から形成されている。The ceramic body 11 is made of alumina (Al
2 O 3 ) or ceramics containing aluminum nitride (AlN) as a main component, or sapphire which is a single crystal of alumina, and the internal electrodes 12 are formed of a metal such as tungsten.
【００１３】また、ベース板１３の材質としては、アル
ミニウム（Ａｌ）等の金属、あるいはアルミナ等のセラ
ミックスを用いるが、熱伝導性と耐プラズマ性が高く、
かつ加工性の良いアルミニウムが好適である。As the material of the base plate 13, a metal such as aluminum (Al) or a ceramic such as alumina is used, which has high thermal conductivity and plasma resistance.
Aluminum, which has good workability, is preferable.
【００１４】そして、両者を接合する接着層１４として
用いるインジウム又はインジウム合金とは、４０〜１０
０重量％のインジウム（Ｉｎ）と、６０〜０重量％のＳ
ｎ，Ａｇ，Ｐｂ，Ａｂ，Ｚｎ，Ａｌ等の少なくとも一種
以上とからなるものであり、具体的な組成としては、表
１に示すようなものを用いる。The indium or indium alloy used as the adhesive layer 14 for joining the two is 40 to 10
0% by weight of indium (In) and 60 to 0% by weight of S
It is composed of at least one or more of n, Ag, Pb, Ab, Zn, Al and the like, and the concrete composition is as shown in Table 1.
【００１５】これらのインジウム又はインジウム合金
は、表２に示すように各種金属の中でも硬度が低く柔軟
性に優れており、かつ表３に示すようにシリコーン接着
剤よりも遙かに高い熱伝導率を有している。そのため、
セラミック体１１とベース板１３との熱膨張差を吸収す
るとともに、ウェハ等の被吸着物２０に加えられた熱を
急速かつ均一に放出することができる。These indium or indium alloys have low hardness and excellent flexibility among various metals as shown in Table 2 and have much higher thermal conductivity than silicone adhesives as shown in Table 3. have. for that reason,
It is possible to absorb the difference in thermal expansion between the ceramic body 11 and the base plate 13 and to quickly and uniformly release the heat applied to the object to be adsorbed 20 such as a wafer.
【００１６】[0016]
【表１】 [Table 1]
【００１７】[0017]
【表２】 [Table 2]
【００１８】[0018]
【表３】 [Table 3]
【００１９】また、セラミック体１１とベース板１３と
の接合部の拡大図を図２に示すように、セラミック体１
１の接合面にはメタライズ層１６を、ベース板１３の接
合面にはメッキ層１７をそれぞれ形成し、これらの間に
接着層１４を介在して接合してある。上記メタライズ層
１６及びメッキ層１７は、銀、銅、ニッケル等のインジ
ウムとの濡れ性の良い金属から成り、これらのメタライ
ズ層１６及びメッキ層１７を備えることにより、接合強
度を高くすることができる。Further, as shown in FIG. 2 which is an enlarged view of the joint between the ceramic body 11 and the base plate 13, the ceramic body 1
A metallized layer 16 is formed on the joint surface of No. 1 and a plating layer 17 is formed on the joint surface of the base plate 13, and an adhesive layer 14 is interposed between them to join them. The metallized layer 16 and the plated layer 17 are made of a metal having a good wettability with indium such as silver, copper and nickel. By providing the metallized layer 16 and the plated layer 17, the bonding strength can be increased. .
【００２０】なお、ベース板１３をセラミックスで形成
する場合は、メッキ層１７の代わりにメタライズ層を形
成すれば良い。When the base plate 13 is made of ceramics, a metallized layer may be formed instead of the plated layer 17.
【００２１】さらに、接着層１４の厚みｔは２０〜１０
０μｍの範囲内とすることが好ましい。これは、２０μ
ｍ未満であると接着層１４内部に欠陥が生じて接合力が
低くなり、一方１００μｍを超えると静電チャック１０
の取付精度が悪くなってしまうためである。Further, the thickness t of the adhesive layer 14 is 20 to 10
It is preferably within the range of 0 μm. This is 20μ
If it is less than m, a defect is generated inside the adhesive layer 14 and the bonding force is lowered, while if it exceeds 100 μm, the electrostatic chuck 10 is used.
This is because the mounting accuracy of becomes worse.
【００２２】また、本発明の他の実施例として、図３に
示すように、接着層１４の周囲に保護部材１８を備える
こともできる。この保護部材１８は、フッ素系樹脂のＯ
リングやエポキシ系接着剤等の耐プラズマ性に優れた材
質から成り、プラズマに直接曝されるような環境でも使
用することができる。As another embodiment of the present invention, a protective member 18 may be provided around the adhesive layer 14 as shown in FIG. The protective member 18 is made of fluorine resin O.
It is made of a material having excellent plasma resistance such as a ring and an epoxy adhesive, and can be used even in an environment where it is directly exposed to plasma.
【００２３】次に、本発明の静電チャック１０の製造方
法を説明する。Next, a method of manufacturing the electrostatic chuck 10 of the present invention will be described.
【００２４】まず内部電極１２を埋設したセラミック体
１１を作製するが、これはグリーンシートの間に内部電
極１２を挟み込んで積層し一体焼成したり、あるいはセ
ラミック体の表面に内部電極１２を形成した後、これを
覆うようにＣＶＤ法等でセラミック層を形成することに
よって得る。First, a ceramic body 11 having an internal electrode 12 embedded therein is prepared. The internal electrode 12 is sandwiched between green sheets to be laminated and integrally fired, or the internal electrode 12 is formed on the surface of the ceramic body. After that, a ceramic layer is formed by a CVD method or the like so as to cover it.
【００２５】このセラミック体１１の裏側の接合面にス
クリーン印刷によって銀ペーストを塗布し、７００℃程
度で焼き付けを行ってメタライズ層１６を形成する。一
方、アルミニウム等の金属製ベース板１３の表面には銀
のメッキ層１７を形成しておく。A silver paste is applied to the bonding surface on the back side of the ceramic body 11 by screen printing and baked at about 700 ° C. to form a metallized layer 16. On the other hand, a silver plating layer 17 is formed on the surface of the base plate 13 made of metal such as aluminum.
【００２６】その後、インジウム粉末をアルコールで溶
かしたペーストを、上記セラミック体１１及びベース板
１３のメタライズ層１６とメッキ層１７の上に塗布す
る。塗布方法は、２００〜４００メッシュのスクリーン
を用いて印刷し、最終的な厚みｔが２０〜１００μｍと
なるようにする。塗布後、アルコールが充分蒸発するま
で乾燥させ、セラミック体１１とベース板１３を重ね合
わせ、インジウムの液相温度（１５７℃）よりも高い温
度まで昇温し、インジウムの接着層１４がメタライズ層
１６とメッキ層１７に充分濡れた状態とした後、降温さ
せれば良い。Thereafter, a paste obtained by dissolving indium powder in alcohol is applied on the metallized layer 16 and the plated layer 17 of the ceramic body 11 and the base plate 13. As a coating method, printing is performed using a screen of 200 to 400 mesh so that the final thickness t becomes 20 to 100 μm. After the application, it is dried until the alcohol is sufficiently evaporated, the ceramic body 11 and the base plate 13 are overlapped with each other, and the temperature is raised to a temperature higher than the liquidus temperature of indium (157 ° C.), so that the indium adhesive layer 14 becomes the metallized layer 16. After making the plating layer 17 sufficiently wet, the temperature may be lowered.
【００２７】なお、接着層１４の形成方法として、イン
ジウムの箔を用いることもできる。即ち、予め厚みが２
０〜１００μｍとなるようにしたインジウム箔を、上記
メタライズ層１６とメッキ層１７の間に挟み込んで、セ
ラミック体１１とベース板１３を重ね合わせ、インジウ
ムの液相温度（１５７℃）よりも高い温度まで昇温して
接合することもできる。As a method of forming the adhesive layer 14, indium foil can be used. That is, the thickness is 2
An indium foil having a thickness of 0 to 100 μm is sandwiched between the metallized layer 16 and the plated layer 17, the ceramic body 11 and the base plate 13 are superposed, and the temperature is higher than the liquidus temperature of indium (157 ° C.). It is also possible to raise the temperature up to and join.
【００２８】なお、図１では単極型の静電チャックを示
したが、複数の内部電極を備え、これらの内部電極間に
通電するようにした双極型の静電チャックとすることも
可能である。Although the single-pole type electrostatic chuck is shown in FIG. 1, it is also possible to use a bipolar type electrostatic chuck having a plurality of internal electrodes and energizing between these internal electrodes. is there.
【００２９】以上のような本発明の静電チャック１０
は、半導体製造工程におけるウェハの搬送や加工時に吸
着固定するために用いることができるが、その他に液晶
基板等の各種基板の吸着固定にも用いることができる。The electrostatic chuck 10 of the present invention as described above.
Can be used for adsorbing and fixing wafers during transportation and processing in a semiconductor manufacturing process, but can also be used for adsorbing and fixing various substrates such as liquid crystal substrates.
【００３０】[0030]
【実施例】ここで、図１に示す本発明の静電チャックを
試作し、比較例として接着層１４をシリコーン接着剤で
形成したものを用意した。それぞれ、接着層１４の厚み
ｔのばらつき量を測定した後、プラズマエッチング装置
に組み込んで被吸着物２０の均熱性を比較する実験を行
った。被吸着物２０として、直径８インチのシリコンウ
ェハを用い、４ｋＷの熱量（プラズマ）を入射した場合
の、ウェハ上の温度のばらつき幅を測定した。EXAMPLES Here, an electrostatic chuck of the present invention shown in FIG. 1 was prototyped, and a comparative example in which the adhesive layer 14 was formed of a silicone adhesive was prepared. After measuring the amount of variation in the thickness t of the adhesive layer 14, the experiment was carried out by incorporating the adhesive layer 14 into a plasma etching apparatus and comparing the thermal uniformity of the adsorbed material 20. A silicon wafer having a diameter of 8 inches was used as the object to be adsorbed 20, and the variation width of the temperature on the wafer was measured when a heat quantity (plasma) of 4 kW was incident.
【００３１】結果は表４に示すように、接着層１４とし
てシリコーン接着剤を用いたものでは、ウェハ上に５〜
２０℃の温度ばらつきが生じた。これは、接着層１４の
熱伝導率が低いために、厚みのばらつきに応じて冷却性
が部分的に異なるためである。The results are shown in Table 4, in the case of using the silicone adhesive as the adhesive layer 14, 5 to 5 are formed on the wafer.
There was a temperature variation of 20 ° C. This is because the adhesive layer 14 has a low thermal conductivity, so that the cooling property is partially different depending on the variation in thickness.
【００３２】これに対し、接着層１４としてインジウム
を用いた本発明実施例では、ウェハ上の温度ばらつきが
１℃以下と低かった。これはインジウムからなる接着層
１４の熱伝導率が高いため、厚みｔにばらつきがあって
も冷却性に影響を与えないためである。このように、本
発明の静電チャック１０は、接着層１４の厚みにばらつ
きがあってもウェハの温度を均一に保持できることがわ
かる。On the other hand, in the example of the present invention using indium as the adhesive layer 14, the temperature variation on the wafer was as low as 1 ° C. or less. This is because the adhesive layer 14 made of indium has a high thermal conductivity, so that even if the thickness t varies, the cooling property is not affected. As described above, it is understood that the electrostatic chuck 10 of the present invention can maintain the temperature of the wafer uniformly even if the thickness of the adhesive layer 14 varies.
【００３３】[0033]
【表４】 [Table 4]
【００３４】[0034]
【発明の効果】以上のように本発明によれば、内部電極
を埋設し吸着面を有するセラミック体と、ベース板とを
インジウム又はインジウム合金からなる接着層を介して
接合し、静電チャックを構成したことによって、インジ
ウム又はインジウム合金は柔軟性があるためセラミック
体とベース板との熱膨張差を吸収することができ、急激
な温度変化があってもセラミック体が破損することを防
止できる。As described above, according to the present invention, the ceramic body having the internal electrodes embedded therein and having the adsorption surface and the base plate are joined together via the adhesive layer made of indium or indium alloy to form an electrostatic chuck. With this structure, since the indium or indium alloy is flexible, the difference in thermal expansion between the ceramic body and the base plate can be absorbed, and the ceramic body can be prevented from being damaged even if there is a rapid temperature change.
【００３５】また、インジウム又はインジウム合金は熱
伝導率が高いため、被吸着物に熱が加わっても均一にか
つ急速に冷却することができる。そのため、半導体製造
工程に用いれば、高電力のプラズマを使用することがで
き、プロセスを高速化し、パターンを微細化し、ウェハ
を大口径化することができる。また、ウェハの均熱性を
高められることからＩＣチップの歩留りを向上させるこ
とができるなどの多くの特徴をもった静電チャックを提
供できる。Further, since indium or an indium alloy has a high thermal conductivity, even if heat is applied to the object to be adsorbed, it can be cooled uniformly and rapidly. Therefore, when used in a semiconductor manufacturing process, high-power plasma can be used, the process can be sped up, the pattern can be miniaturized, and the diameter of the wafer can be increased. Further, it is possible to provide an electrostatic chuck having many characteristics such that the yield of IC chips can be improved because the soaking property of the wafer can be improved.
【図１】一般的な静電チャックの構造を示す断面図であ
る。FIG. 1 is a cross-sectional view showing a structure of a general electrostatic chuck.
【図２】本発明の静電チャックの接合部を示す断面図で
ある。FIG. 2 is a sectional view showing a joint portion of the electrostatic chuck of the present invention.
【図３】本発明の静電チャックの他の実施例の接合部を
示す断面図である。FIG. 3 is a cross-sectional view showing a joint portion of another embodiment of the electrostatic chuck of the present invention.
１０ ：静電チャック １１ ：セラミック体 １１ａ：吸着面 １２ ：内部電極 １３ ：ベース板 １４ ：接着層 １５ ：電源 １６ ：メタライズ層 １７ ：メッキ層 １８ ：保護部材 10: Electrostatic chuck 11: Ceramic body 11a: Adsorption surface 12: Internal electrode 13: Base plate 14: Adhesive layer 15: Power supply 16: Metallization layer 17: Plating layer 18: Protective member
Claims (1)
ク体と、ベース板とをインジウム又はインジウム合金か
らなる接着層を介して接合したことを特徴とする静電チ
ャック。1. An electrostatic chuck characterized in that a ceramic body having an internal electrode embedded therein and having an attracting surface is joined to a base plate via an adhesive layer made of indium or an indium alloy.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19385095A JP3485390B2 (en) | 1995-07-28 | 1995-07-28 | Electrostatic chuck |
| US08/693,532 US5886863A (en) | 1995-05-09 | 1996-07-25 | Wafer support member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19385095A JP3485390B2 (en) | 1995-07-28 | 1995-07-28 | Electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0945757A true JPH0945757A (en) | 1997-02-14 |
| JP3485390B2 JP3485390B2 (en) | 2004-01-13 |
Family
ID=16314797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19385095A Expired - Fee Related JP3485390B2 (en) | 1995-05-09 | 1995-07-28 | Electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3485390B2 (en) |
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| WO1999054928A1 (en) * | 1998-04-21 | 1999-10-28 | Applied Materials, Inc. | Electrostatic chuck formed by integral ceramic and metal sintering |
| US6280584B1 (en) * | 1998-07-29 | 2001-08-28 | Applied Materials, Inc. | Compliant bond structure for joining ceramic to metal |
| US6462928B1 (en) | 1999-05-07 | 2002-10-08 | Applied Materials, Inc. | Electrostatic chuck having improved electrical connector and method |
| US6490146B2 (en) | 1999-05-07 | 2002-12-03 | Applied Materials Inc. | Electrostatic chuck bonded to base with a bond layer and method |
| US6490144B1 (en) * | 1999-11-29 | 2002-12-03 | Applied Materials, Inc. | Support for supporting a substrate in a process chamber |
| US6538872B1 (en) | 2001-11-05 | 2003-03-25 | Applied Materials, Inc. | Electrostatic chuck having heater and method |
| US6820795B2 (en) * | 2001-09-05 | 2004-11-23 | Ngk Insulators, Ltd. | Joined article of a supporting member for a semiconductor wafer and a method of producing the same |
| US6838646B2 (en) | 2002-08-22 | 2005-01-04 | Sumitomo Osaka Cement Co., Ltd. | Susceptor device |
| JP2006044087A (en) * | 2004-08-05 | 2006-02-16 | Shinko Electric Co Ltd | Thermal head and printer |
| EP1258918A4 (en) * | 2000-01-21 | 2006-12-06 | Tocalo Co Ltd | Electrostatic chuck member and method of producing the same |
| JP2007110023A (en) * | 2005-10-17 | 2007-04-26 | Shinko Electric Ind Co Ltd | Substrate holding apparatus |
| US7381673B2 (en) | 2003-10-27 | 2008-06-03 | Kyocera Corporation | Composite material, wafer holding member and method for manufacturing the same |
| WO2008068567A3 (en) * | 2006-05-01 | 2008-11-20 | Beijert Engineering | Integrated circuit probe card analyzer |
| US7480129B2 (en) | 2004-03-31 | 2009-01-20 | Applied Materials, Inc. | Detachable electrostatic chuck for supporting a substrate in a process chamber |
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|---|---|---|---|---|
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| US6280584B1 (en) * | 1998-07-29 | 2001-08-28 | Applied Materials, Inc. | Compliant bond structure for joining ceramic to metal |
| US6462928B1 (en) | 1999-05-07 | 2002-10-08 | Applied Materials, Inc. | Electrostatic chuck having improved electrical connector and method |
| US6490146B2 (en) | 1999-05-07 | 2002-12-03 | Applied Materials Inc. | Electrostatic chuck bonded to base with a bond layer and method |
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| EP1258918A4 (en) * | 2000-01-21 | 2006-12-06 | Tocalo Co Ltd | Electrostatic chuck member and method of producing the same |
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| US6538872B1 (en) | 2001-11-05 | 2003-03-25 | Applied Materials, Inc. | Electrostatic chuck having heater and method |
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| JP2007110023A (en) * | 2005-10-17 | 2007-04-26 | Shinko Electric Ind Co Ltd | Substrate holding apparatus |
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| JP2011238682A (en) * | 2010-05-07 | 2011-11-24 | Ngk Insulators Ltd | Wafer mounting device and manufacturing method for the same |
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| JP2016031956A (en) * | 2014-07-28 | 2016-03-07 | 株式会社日立ハイテクノロジーズ | Plasma processing device |
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|---|---|
| JP3485390B2 (en) | 2004-01-13 |
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