JPH09507966A - 超小型電子構造体に用いるノボラックポリマー系プレーナー化フィルム - Google Patents
超小型電子構造体に用いるノボラックポリマー系プレーナー化フィルムInfo
- Publication number
- JPH09507966A JPH09507966A JP50437296A JP50437296A JPH09507966A JP H09507966 A JPH09507966 A JP H09507966A JP 50437296 A JP50437296 A JP 50437296A JP 50437296 A JP50437296 A JP 50437296A JP H09507966 A JPH09507966 A JP H09507966A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- molecular weight
- combinations
- surfactant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Magnetic Heads (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.熱に暴露した際にフィルムが基板に付着した状態を保持するように基板上 に連続プレーナー化フィルムを形成する方法であって、改良点が (a)基板の表面に、低分子量ノボラック樹脂、ならびに非フッ素化炭化水素 、フッ素化炭化水素およびその組合わせよりなる群から選ばれる界面活性剤を含 むポリマー溶液を適用し;そして (b)その溶液と基板を加熱してその基板表面に連続プレーナー化フィルムを 形成する ことを含む上記方法。 2.溶液がさらに有機溶剤を含む、請求の範囲第1項にに記載の方法。 3.溶液が溶液の全重量に対して約1〜90重量%の低分子量ノボラック樹脂 、約0.01〜約5重量%の界面活性剤および約0〜約90重量%の溶剤を含む 、請求の範囲第2項に記載の方法。 4.ノボラック樹脂が約200〜約20,000amuの分子量を有する、請 求の範囲第2項に記載の方法。 5.非フッ素化炭化水素系界面活性剤が、約5〜約50個の炭素を有する有機 酸の脂肪族誘導体およびそのエステルならびにその組合わせからなる、請求の範 囲第2項に記載の方法。 6.非フッ素化炭化水素系界面活性剤が、スルホコハク酸ジオクチル、スルホ コハク酸脂肪アルコールポリグリコールおよびその組合わせよりなる群から選ば れる、請求の範囲第5項に記載の方法。 7.フッ素化炭化水素系界面活性剤が、約5〜約50個の炭素および少なくと も1個の炭素−フッ素結合を有する、有機酸の脂肪族誘導体およびそのエステル 、約5〜約60個の炭素および少なくとも1個の炭素−フッ素結合を有するフル オロアルキルスルホネートアルキルアンモニウム塩ならびにその組合わせからな る、請求の範囲第2項に記載の方法。 8.低分子量ノボラック樹脂、ならびに非フッ素化炭化水素、フッ素化炭化水 素およびその組合わせよりなる群から選ばれる界面活性剤を含む連続プレーナー 化フィルムを適用した基板であって、熱に暴露した際にそのフィルムがその基板 から剥離しない上記基板。 9.組成物の全重量に対して: 約1〜90重量%の低分子量ノボラック樹脂; 約0.01〜約5重量%の、フッ素化炭化水素、非フッ素化炭化水素、および その組合わせよりなる群から選ばれる界面活性剤;ならびに 約0〜約90%の有機溶剤 を含む組成物。 10.フッ素化炭化水素系界面活性剤が、実験式CxHyFzOaNb(式中、x =約5〜約10、y=約0〜約20、z=約1〜約20、a=約2〜約6、b= 約0〜約1)を有する、分子量約5500〜8500原子質量単位のフルオロ脂 肪族ポリマーエステルである、請求の範囲第9項に記載の組成物。 11.基板表面がフィルムでローカル、リージョナルまたはグローバルプレー ナー化される、請求の範囲第1項に記載の方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/271,291 | 1994-07-06 | ||
| US271,291 | 1994-07-06 | ||
| US08/271,291 US5858547A (en) | 1994-07-06 | 1994-07-06 | Novolac polymer planarization films for microelectronic structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09507966A true JPH09507966A (ja) | 1997-08-12 |
| JP3188471B2 JP3188471B2 (ja) | 2001-07-16 |
Family
ID=23034966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50437296A Expired - Lifetime JP3188471B2 (ja) | 1994-07-06 | 1995-07-05 | 超小型電子構造体に用いるノボラックポリマー系プレーナー化フィルム |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US5858547A (ja) |
| EP (1) | EP0769204B1 (ja) |
| JP (1) | JP3188471B2 (ja) |
| KR (1) | KR100252579B1 (ja) |
| CN (1) | CN1125690C (ja) |
| AT (1) | ATE212475T1 (ja) |
| AU (1) | AU3093495A (ja) |
| CA (1) | CA2194376A1 (ja) |
| DE (1) | DE69525157T2 (ja) |
| IL (1) | IL114336A (ja) |
| TW (1) | TW494278B (ja) |
| WO (1) | WO1996002066A2 (ja) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6506831B2 (en) * | 1998-12-20 | 2003-01-14 | Honeywell International Inc. | Novolac polymer planarization films with high temperature stability |
| US6461717B1 (en) | 2000-04-24 | 2002-10-08 | Shipley Company, L.L.C. | Aperture fill |
| JP4654544B2 (ja) | 2000-07-12 | 2011-03-23 | 日産化学工業株式会社 | リソグラフィー用ギャップフィル材形成組成物 |
| DE10146146B4 (de) * | 2001-09-19 | 2004-02-05 | Infineon Technologies Ag | Verfahren zur elektrischen Isolation nebeneinander liegender metallischer Leiterbahnen und Halbleiterbauelement mit voneinander isolierten metallischen Leiterbahnen |
| US20040192876A1 (en) * | 2002-11-18 | 2004-09-30 | Nigel Hacker | Novolac polymer planarization films with high temparature stability |
| WO2005017617A1 (en) * | 2003-07-17 | 2005-02-24 | Honeywell International Inc. | Planarization films for advanced microelectronic applications and devices and methods of production thereof |
| US8901268B2 (en) * | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
| KR101232137B1 (ko) * | 2005-11-21 | 2013-02-12 | 엘지디스플레이 주식회사 | 인쇄판, 인쇄판의 제조방법 및 그를 이용한 액정표시소자제조방법 |
| KR101546222B1 (ko) * | 2008-02-25 | 2015-08-20 | 허니웰 인터내셔널 인코포레이티드 | 공정가능한 무기 및 유기 중합체 배합물, 이의 제조방법 및 이의 용도 |
| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| JP5874722B2 (ja) * | 2011-02-28 | 2016-03-02 | Jsr株式会社 | パターン形成方法 |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| US8828489B2 (en) | 2011-08-19 | 2014-09-09 | International Business Machines Corporation | Homogeneous modification of porous films |
| JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS535705B2 (ja) * | 1973-07-28 | 1978-03-01 | ||
| US4167500A (en) * | 1976-06-14 | 1979-09-11 | Lord Corporation | Aqueous compositions comprising phenolic resin and crosslinking agent |
| DE2943725C2 (de) * | 1979-10-30 | 1984-07-19 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zur Prüfung einer Fehlerstromschutzeinrichtung mit einem Summenstromwandler und Einrichtungen zur Durchführung des Verfahrens |
| US4515828A (en) * | 1981-01-02 | 1985-05-07 | International Business Machines Corporation | Planarization method |
| JPS5982746A (ja) * | 1982-11-04 | 1984-05-12 | Toshiba Corp | 半導体装置の電極配線方法 |
| US4427713A (en) * | 1983-01-17 | 1984-01-24 | Rca Corporation | Planarization technique |
| US4604162A (en) * | 1983-06-13 | 1986-08-05 | Ncr Corporation | Formation and planarization of silicon-on-insulator structures |
| US4511430A (en) * | 1984-01-30 | 1985-04-16 | International Business Machines Corporation | Control of etch rate ratio of SiO2 /photoresist for quartz planarization etch back process |
| US4532005A (en) * | 1984-05-21 | 1985-07-30 | At&T Bell Laboratories | Device lithography using multi-level resist systems |
| US4619837A (en) * | 1985-02-01 | 1986-10-28 | Advanced Micro Devices, Inc. | Polymerizable planarization layer for integrated circuit structures |
| US4621045A (en) * | 1985-06-03 | 1986-11-04 | Motorola, Inc. | Pillar via process |
| US4621042A (en) * | 1985-08-16 | 1986-11-04 | Rca Corporation | Absorptive planarizing layer for optical lithography |
| US4701390A (en) * | 1985-11-27 | 1987-10-20 | Macdermid, Incorporated | Thermally stabilized photoresist images |
| US4762768A (en) * | 1986-01-29 | 1988-08-09 | Macdermid, Incorporated | Thermally stabilized photoresist images |
| DE3780387T2 (de) * | 1986-09-18 | 1993-01-28 | Japan Synthetic Rubber Co Ltd | Herstellungsverfahren einer integrierten schaltung. |
| JPH0770527B2 (ja) * | 1987-02-27 | 1995-07-31 | アメリカン テレフォン アンド テレグラフ カムパニー | デバイス作製方法 |
| US4904516A (en) * | 1988-01-12 | 1990-02-27 | Certain Teed Corp | Phenol-formaldehyde resin solution containing water soluble alkaline earth metal salt |
| US5178988A (en) * | 1988-09-13 | 1993-01-12 | Amp-Akzo Corporation | Photoimageable permanent resist |
| US5276126A (en) * | 1991-11-04 | 1994-01-04 | Ocg Microelectronic Materials, Inc. | Selected novolak resin planarization layer for lithographic applications |
-
1994
- 1994-07-06 US US08/271,291 patent/US5858547A/en not_active Expired - Lifetime
-
1995
- 1995-06-26 IL IL11433695A patent/IL114336A/xx not_active IP Right Cessation
- 1995-07-05 AT AT95926623T patent/ATE212475T1/de active
- 1995-07-05 EP EP95926623A patent/EP0769204B1/en not_active Expired - Lifetime
- 1995-07-05 CA CA 2194376 patent/CA2194376A1/en not_active Abandoned
- 1995-07-05 JP JP50437296A patent/JP3188471B2/ja not_active Expired - Lifetime
- 1995-07-05 KR KR1019970700031A patent/KR100252579B1/ko not_active Expired - Fee Related
- 1995-07-05 CN CN95194786A patent/CN1125690C/zh not_active Expired - Fee Related
- 1995-07-05 AU AU30934/95A patent/AU3093495A/en not_active Abandoned
- 1995-07-05 WO PCT/US1995/008417 patent/WO1996002066A2/en active IP Right Grant
- 1995-07-05 DE DE69525157T patent/DE69525157T2/de not_active Expired - Fee Related
- 1995-07-06 TW TW84106973A patent/TW494278B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100252579B1 (ko) | 2000-06-01 |
| AU3093495A (en) | 1996-02-09 |
| KR970705168A (ko) | 1997-09-06 |
| TW494278B (en) | 2002-07-11 |
| EP0769204B1 (en) | 2002-01-23 |
| CN1156421A (zh) | 1997-08-06 |
| US5858547A (en) | 1999-01-12 |
| ATE212475T1 (de) | 2002-02-15 |
| CN1125690C (zh) | 2003-10-29 |
| IL114336A0 (en) | 1995-10-31 |
| JP3188471B2 (ja) | 2001-07-16 |
| DE69525157T2 (de) | 2002-08-22 |
| CA2194376A1 (en) | 1996-01-25 |
| EP0769204A2 (en) | 1997-04-23 |
| DE69525157D1 (de) | 2002-03-14 |
| IL114336A (en) | 1999-12-22 |
| WO1996002066A3 (en) | 1996-05-02 |
| WO1996002066A2 (en) | 1996-01-25 |
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