JPH01261838A - Wire bonding apparatus - Google Patents
Wire bonding apparatusInfo
- Publication number
- JPH01261838A JPH01261838A JP63089711A JP8971188A JPH01261838A JP H01261838 A JPH01261838 A JP H01261838A JP 63089711 A JP63089711 A JP 63089711A JP 8971188 A JP8971188 A JP 8971188A JP H01261838 A JPH01261838 A JP H01261838A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- capillary
- lead frame
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はワイヤボンディング装置に関し、特に集積回
路素子上の外部接続用パッド部と回路配線基板上の導体
配線との間を導体線を用いて接続処理するワイヤボンデ
ィング装置に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a wire bonding device, and particularly to a wire bonding device that uses a conductor wire between an external connection pad portion on an integrated circuit element and a conductor wiring on a circuit wiring board. The present invention relates to a wire bonding device that performs connection processing.
従来から、半導体素子に設けられた電極と、リードフレ
ームに設けられた端子とを電気的に導通させる場合、こ
れら両者をワイヤで接続する方法、いわゆるワイヤボン
ディング法が知られている。BACKGROUND ART Conventionally, when electrically conducting an electrode provided on a semiconductor element and a terminal provided on a lead frame, a method of connecting the two with a wire, a so-called wire bonding method, has been known.
このワイヤボンディングを行う装置は、通常、超音波振
動が与えられるキャピラリにワイヤが通され、このワイ
ヤに超音波振動するキャピラリにより所定のボンディン
グ荷重を加えることによって上記半導体素子の電極と、
リードフレームの端子とに上記ワイヤをボンディングす
るように構成されている。In this wire bonding device, a wire is usually passed through a capillary to which ultrasonic vibrations are applied, and a predetermined bonding load is applied to the wire by the ultrasonic vibrating capillary, thereby bonding the electrode of the semiconductor element.
The wire is configured to be bonded to a terminal of a lead frame.
ところで、近年半導体素子の高密度化にともないボンデ
ィングされるワイヤ間の隙間が非常に狭くなってきてい
る。そのため、ボンディングされたワイヤがわずかに倒
れるなどしただけで、隣り合うワイヤが互いに接触して
不良品の発生を招くという問題があった。Incidentally, in recent years, as the density of semiconductor devices has increased, the gap between wires to be bonded has become extremely narrow. Therefore, there is a problem in that even if the bonded wires fall slightly, adjacent wires come into contact with each other, resulting in the production of defective products.
そこで、このような欠点を除去するため、絶縁被膜で被
覆されたワイヤを用いてボンディングすることが考えら
れている。このようなワイヤを用いる場合、半導体素子
の電極（これを第１のボンディング部とする）へのボン
ディングでは、上記ワイヤをトーチで加熱してボールを
形成してから行うため、ワイヤを被覆した絶縁被膜がボ
ンディングの邪魔になることはないが、リードフレーム
の端子（これを第２ボンディング部とする）ヘボンディ
ングする場合は、上記ワイヤは絶縁被膜を介して上記第
２のボンディング部に接触することになる。このためボ
ンディング時に上記ワイヤにキャピラリの超音波振動を
単に加えるだけでは、絶縁被膜が確実に除去された状態
でボンディングすることができないことがあるので、そ
のボンディング強度が十分に得られず、上記ワイヤが第
２のボンディング部からはがれてしまうという問題が生
じていた。Therefore, in order to eliminate such drawbacks, it has been considered to perform bonding using a wire coated with an insulating film. When using such a wire, the wire is heated with a torch to form a ball before bonding to the electrode of the semiconductor element (this is the first bonding part). The coating does not interfere with bonding, but when bonding to a terminal of a lead frame (this is the second bonding part), the wire must come into contact with the second bonding part through the insulating coating. become. For this reason, simply applying ultrasonic vibration of a capillary to the wire during bonding may not be able to perform bonding with the insulating coating reliably removed. A problem has arisen in that the bonding part is peeled off from the second bonding part.
なお、絶縁被膜で被覆されたワイヤをボンディング部に
ボンディングする時に、絶縁被膜を除去して行えるよう
にした他の例としては、特開昭６２−１４０４２８号公
報に示されているように、ボンディング部にワイヤを絶
縁被膜を介して接触させた状態で第１のボンディング荷
重を所定時間かけた後、さらに第２のボンディング荷重
を所定時間かけるようにしたものがある。また特開昭６
０−１５８６３７号公報に示されるように、加熱装置に
より絶縁被膜の一部あるいは全部を加熱除去し、ボンデ
ィングするように構成した装置もある。Another example of bonding a wire coated with an insulating film to a bonding part by removing the insulating film is a bonding method as shown in Japanese Patent Application Laid-open No. 140428/1983. There is a device in which a first bonding load is applied for a predetermined time with a wire in contact with the portion via an insulating coating, and then a second bonding load is further applied for a predetermined time. Also, JP-A-6
As shown in Japanese Patent No. 0-158637, there is also a device configured to heat and remove part or all of the insulating coating using a heating device and then perform bonding.
ところが従来の通常のワイヤボンディング装置ではボン
ディング時に、絶縁被膜を確実、に除去することができ
なかった。また特開昭６２−１４０４２８号公報記載の
装置ではキャピラリ内部に超音波によって破壊された絶
縁被膜が発生してキャピラリの寿命を著しく低下させる
などの問題があった。また特開昭６０−１５８６３７号
公報のワイヤボンディング装置においては加熱装置のタ
イミングを制御するために専用のコントローラが必要で
あり、かつそのボンディング情報としてボンディング開
始、終了時期の他、ボンディング接合長、ボンディング
ワイヤ長等のデータを随時入力することが必要で、非常
に取り扱いが複雑であり、ボンディング装置として複雑
になるため著しく装置の信頬性の低下が起こるなどの問
題があった。However, with conventional wire bonding equipment, it has not been possible to reliably remove the insulating coating during bonding. Furthermore, the apparatus described in Japanese Patent Application Laid-Open No. 62-140428 has a problem in that an insulating film destroyed by ultrasonic waves occurs inside the capillary, significantly shortening the life of the capillary. Furthermore, the wire bonding apparatus disclosed in Japanese Patent Application Laid-Open No. 60-158637 requires a dedicated controller to control the timing of the heating device, and the bonding information includes bonding start and end times, bonding length, bonding time, etc. It is necessary to input data such as the wire length at any time, making it extremely complicated to handle and making the bonding device complicated, resulting in problems such as a significant decrease in the reliability of the device.
この発明は上記のような問題点を解消するためになされ
たもので、絶縁被膜で被覆されたワイヤをボンディング
部にボンディングする際、上記絶縁被膜を確実に除去で
き、しかも構成が簡単で信転性の高いワイヤボンディン
グ装置を得ることを目的とする。This invention was made to solve the above-mentioned problems. When bonding a wire coated with an insulating film to a bonding part, the above-mentioned insulating film can be reliably removed, and the structure is simple and reliable. The purpose of the present invention is to obtain a wire bonding device with high performance.
この発明に係るワイヤボンディング装置は、ボンディン
グ時、絶縁被膜で被覆されたワイヤを、超音波振動する
キャピラリにより金属導体のボンディング部に圧接する
とともに、超音波印加手段により上記金属導体に超音波
振動を加えるようにしたものである。In the wire bonding apparatus according to the present invention, during bonding, a wire coated with an insulating film is pressed against a bonding portion of a metal conductor by a capillary that vibrates ultrasonically, and ultrasonic vibrations are applied to the metal conductor by an ultrasonic applying means. I decided to add it.
この発明においては、ボンディング部にワイヤを絶縁被
膜を介して接触させた状態で、キャピラリと超音波印加
手段の両方から超音波振動をワイヤに加えるようにした
から、絶縁被覆されたワイヤには、キャピラリとの接触
面、及び金属導体との接触面の両方から超音波振動が与
えられ、このためワイヤの絶縁被膜が素早く良好に除去
されると同時に上記ワイヤがボンディング部にボンディ
ングされることとなり、つまりボンディング部とワイヤ
との間に絶縁被膜が介在しない状態でボンディングが行
われることとなり、これにより高速でしかもレーザ等の
大きな装置構成を必要とせずに十分な結合強度のボンデ
ィングを行うことができる。In this invention, ultrasonic vibrations are applied to the wire from both the capillary and the ultrasonic application means while the wire is in contact with the bonding part through the insulating coating. Ultrasonic vibrations are applied from both the contact surface with the capillary and the contact surface with the metal conductor, so that the insulation coating of the wire is removed quickly and well, and at the same time the wire is bonded to the bonding part, In other words, bonding is performed without an insulating film intervening between the bonding part and the wire, and as a result, bonding can be performed at high speed and with sufficient bonding strength without requiring large equipment such as a laser. .
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図〜第４図は本発明の一実施例によるワイヤボンデ
ィング装置を説明するための図であり、これらの図にお
いて、１はワイヤボンディング装置の超音波振動する超
音波ホーン（図示せず）の先端に取着されたキャピラリ
である。このキャピラリｌにはビニールなどの絶縁被膜
２で被覆されたワイヤ３が挿通保持され、このワイヤ３
は上記キャピラリｌの下端面から所定長さ突出している
。1 to 4 are diagrams for explaining a wire bonding apparatus according to an embodiment of the present invention, and in these figures, reference numeral 1 denotes an ultrasonic horn (not shown) that vibrates ultrasonically of the wire bonding apparatus. It is a capillary attached to the tip of. A wire 3 covered with an insulating coating 2 such as vinyl is inserted through and held in this capillary l.
protrudes a predetermined length from the lower end surface of the capillary l.
このワイヤ３は、ボンディング時その突出端にトーチ（
図示せず）で加熱されることによってボール４が形成さ
れ、このボール４の部分から上記絶縁被膜２が除去され
るものである。During bonding, this wire 3 is exposed to a torch (
A ball 4 is formed by heating the ball 4 with a heating device (not shown), and the insulating coating 2 is removed from the ball 4 portion.
またこの装置では、このような状態にあるキャピラリ１
の下方に、半導体素子５がグイボンディングされ、ヒー
タ（図示せず）で加熱されるリードフレーム６が搬送さ
れてくると、そのことがセンサ（図示せず）により検知
されてワイヤボンディング工程が開始されるようになっ
ている。In addition, in this device, capillary 1 in such a state
When a lead frame 6, on which semiconductor elements 5 are bonded and heated by a heater (not shown), is conveyed below, this is detected by a sensor (not shown) and the wire bonding process begins. It is supposed to be done.
次に動作について説明する。Next, the operation will be explained.
まずキャピラリ１が第１のボンディング部である上記半
導体素子５の電ＦｉＳａ上に下降し、上記ワイヤ３の先
端に形成されたボール４を上記電極５ａに押圧する。こ
の状態で上記ボール４にキャピラリ１からの超音波振動
と図示せぬヒータからの熱が加えられることにより、第
２図に示すように上記ボール４が上記半導体素子５の電
極５ａにボンディングされる。First, the capillary 1 descends onto the electric field FiSa of the semiconductor element 5, which is the first bonding portion, and presses the ball 4 formed at the tip of the wire 3 against the electrode 5a. In this state, by applying ultrasonic vibration from the capillary 1 and heat from a heater (not shown) to the ball 4, the ball 4 is bonded to the electrode 5a of the semiconductor element 5 as shown in FIG. .
次に上記キャピラリ１は上昇し、その後上記リードフレ
ーム６の端子６ａの上方に位置決めされる。そして、上
記キャピラリ１は下降してその下端面により絶縁被膜２
で被覆されたワイヤ３を上記端子６ａに圧接する。この
時、すでに超音波振動発生器７の先端に取付けられた伝
達ホーン７ａは前記リードフレーム６の端子６ａに接触
している。この状態で上記ワイヤ３にはキャピラリ１か
らの超音波振動と伝達ホーン７ａからの超音波振動と、
リードフレーム６を介するヒータからの熱とが所定時間
加えられる。これによりリードフレーム６の端子６ａと
キャピラリ１の下端面とで挟持された部分のワイヤ３の
絶縁被膜２にはキャピラリ１と伝達ホーン７ａの超音波
振動による摩擦熱とヒータからの熱とが所定時間加えら
れる。第３図はこの状態のワイヤボンディング装置を示
しており、第５図はその拡大図である。Next, the capillary 1 rises and is then positioned above the terminal 6a of the lead frame 6. Then, the capillary 1 descends and its lower end surface forms an insulating coating 2.
The wire 3 coated with is pressed against the terminal 6a. At this time, the transmission horn 7a attached to the tip of the ultrasonic vibration generator 7 is already in contact with the terminal 6a of the lead frame 6. In this state, the wire 3 receives ultrasonic vibrations from the capillary 1, ultrasonic vibrations from the transmission horn 7a,
Heat from a heater is applied via the lead frame 6 for a predetermined period of time. As a result, the portion of the insulating coating 2 of the wire 3 sandwiched between the terminal 6a of the lead frame 6 and the lower end surface of the capillary 1 receives a predetermined amount of frictional heat due to the ultrasonic vibrations of the capillary 1 and the transmission horn 7a and heat from the heater. Time is added. FIG. 3 shows the wire bonding apparatus in this state, and FIG. 5 is an enlarged view thereof.
この時、リードフレーム６の端子６ａとキャピラリｌの
下端面とで挟持された部分のワイヤ３を被覆した絶縁被
膜２はキャピラリ１の超音波振動による摩擦熱によって
主にワイヤの上側の部分３ａが溶融除去されることにな
る。又、同様にワイヤの下側の部分３ｂの絶縁被膜２は
伝達ホーン７ａの発生した超音波振動とヒータからの熱
とによって溶融除去されることになる。そして同時にワ
イヤ３はその下側部分３ｂが上記キャピラリ１と伝達ホ
ーン７ａの超音波振動とヒータからの熱とによって溶融
されて上記リードフレーム６の端子６ａにボンディング
されることになる。そして所定時間経過後、キャピラリ
１が上昇し、所定の位置にきたとき、クランパ（図示せ
ず）によりワイヤがクランプされる。さらにこの状態の
まま、キャピラリが昇してワイヤに張力が加えられるこ
とにより、上記ワイヤ３が第４図に示すようにリードフ
レーム６の端子６ａにボンディングされた箇所から切断
される。At this time, the insulation coating 2 covering the portion of the wire 3 sandwiched between the terminal 6a of the lead frame 6 and the lower end surface of the capillary 1 is mainly damaged by frictional heat caused by the ultrasonic vibration of the capillary 1. It will be melted away. Similarly, the insulating coating 2 on the lower portion 3b of the wire is melted and removed by the ultrasonic vibrations generated by the transmission horn 7a and the heat from the heater. At the same time, the lower portion 3b of the wire 3 is melted by the ultrasonic vibrations of the capillary 1 and the transmission horn 7a and the heat from the heater, and is bonded to the terminal 6a of the lead frame 6. After a predetermined period of time has elapsed, the capillary 1 rises and when it reaches a predetermined position, the wire is clamped by a clamper (not shown). Furthermore, in this state, the capillary rises and tension is applied to the wire, thereby cutting the wire 3 from the point where it is bonded to the terminal 6a of the lead frame 6, as shown in FIG.
このように本実施例では、絶縁被膜２により被覆された
ワイヤ３をリードフレーム６の端子６ａにボンディング
する際に、キャピラリｌから超音波をワイヤ３に加え、
かつ伝達ホーン７ａよリ−ドフレーム６の端子６ａにも
一部音波を加え、所定の荷重をかけてボンディングする
ようにしたので、絶縁被膜２を良好に除去した状態でワ
イヤ３を上記リードフレーム６の端子６ａにボンディン
グすることができ、ボンディング強度を十分大きくする
ことができる。In this embodiment, when bonding the wire 3 covered with the insulating coating 2 to the terminal 6a of the lead frame 6, ultrasonic waves are applied to the wire 3 from the capillary l,
In addition, a sound wave is applied to a portion of the terminal 6a of the lead frame 6 from the transmission horn 7a, and bonding is performed by applying a predetermined load, so that the wire 3 is attached to the lead frame with the insulation coating 2 well removed. 6 terminal 6a, and the bonding strength can be sufficiently increased.
なお、上記実施例では超音波振動発生器に伝達ホーンを
取り付け、該伝達ホーンによりリードフレームの端子に
超音波振動を与える場合を示したが、リードフレームに
超音波振動を与える手段はこれに限ることはなく他の手
段を用いてもよく、上記実施例と同様の効果を奏する。In addition, in the above embodiment, a transmission horn is attached to the ultrasonic vibration generator, and the transmission horn applies ultrasonic vibration to the terminal of the lead frame, but the means for applying ultrasonic vibration to the lead frame is limited to this. Alternatively, other means may be used, and the same effects as in the above embodiment can be achieved.
また上記実施例ではリードフレームの端子に伝達ホーン
をコンタクトしているが、これは端子にコンタクトしな
くてもよく、リードフレームの一部に接触させて出力の
大きい超音波振動を与えるようにしても上記実施例と同
様の効果を奏することは言うまでもない。Also, in the above embodiment, the transmission horn is in contact with the terminal of the lead frame, but it does not need to be in contact with the terminal, but it can be brought into contact with a part of the lead frame to apply high-output ultrasonic vibration. Needless to say, this embodiment also has the same effect as the above embodiment.
さらに、上記実施例では半導体素子のボンディングを例
にして説明したが、これはその他のデバイス例えばサー
マルヘッド、密着イメージセンサ。Furthermore, although the above embodiments have been described using bonding of semiconductor elements as an example, this can also be applied to other devices such as thermal heads and contact image sensors.
ＬＥＤヘッド、ハイブリッドＩＣ等をボンディングして
も同様の効果を奏する。Similar effects can be obtained by bonding LED heads, hybrid ICs, etc.
以上のようにこの発明に係るワイヤボンディング装置に
よれば、ボンディング時、絶縁被膜で被覆されたワイヤ
を、超音波振動するキャピラリにより金属導体のボンデ
ィング部に圧接するとともに、超音波振動印加手段によ
り上記金属導体に超音波振動を加えるようにしたので、
ボンディング時にワイヤの絶縁被膜を確実に除去するこ
とができ、これにより絶縁被膜で被覆されたワイヤを用
いて良好かつ確実にワイヤボンディングを行なうことが
でき、しかも装置の構成が簡単であるという効果がある
。As described above, according to the wire bonding apparatus according to the present invention, during bonding, the wire covered with the insulating film is pressed against the bonding part of the metal conductor by the ultrasonic vibrating capillary, and the By applying ultrasonic vibration to the metal conductor,
The insulating coating of the wire can be reliably removed during bonding, thereby allowing good and reliable wire bonding to be performed using the wire covered with the insulating coating, and the device configuration is simple. be.
第１図ないし第４図はそれぞれ本発明の一実施例による
ワイヤボンディング装置の、ワイヤボンディング動作を
順次示す説明図、第５図はワイヤのリードフレーム端子
へのボンディング状態を示す拡大図である。
１・・・キャピラリ、２・・・絶縁被膜、３・・・ワイ
ヤ、４・・・ボール、５・・・半導体素子、６・・・リ
ードフレーム、６ａ・・・リードフレームの端子、７・
・・超音波振動発生器、７ａ・・・伝達ホーン。
なお、図中同一符号は同−又は相当部分を示す。1 to 4 are explanatory views sequentially showing wire bonding operations of a wire bonding apparatus according to an embodiment of the present invention, and FIG. 5 is an enlarged view showing a state of bonding a wire to a lead frame terminal. DESCRIPTION OF SYMBOLS 1... Capillary, 2... Insulating coating, 3... Wire, 4... Ball, 5... Semiconductor element, 6... Lead frame, 6a... Lead frame terminal, 7...
...Ultrasonic vibration generator, 7a...Transmission horn. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
ンディング部に圧接してボンディングする装置において
、 上記ワイヤを保持するとともに、ボンディング時には該
ワイヤを上記ボンディング部に圧接し、かつ超音波振動
するキャピラリと、 該ボンディング時上記金属導体に超音波振動を加える超
音波振動印加手段とを備えたことを特徴とするワイヤボ
ンディング装置。(1) In an apparatus for bonding a wire covered with an insulating film by pressing it against a bonding part of a metal conductor, a capillary that holds the wire, presses the wire against the bonding part during bonding, and vibrates ultrasonically. A wire bonding apparatus comprising: and ultrasonic vibration applying means for applying ultrasonic vibration to the metal conductor during the bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63089711A JPH01261838A (en) | 1988-04-12 | 1988-04-12 | Wire bonding apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63089711A JPH01261838A (en) | 1988-04-12 | 1988-04-12 | Wire bonding apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01261838A true JPH01261838A (en) | 1989-10-18 |
Family
ID=13978355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63089711A Pending JPH01261838A (en) | 1988-04-12 | 1988-04-12 | Wire bonding apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01261838A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7261230B2 (en) * | 2003-08-29 | 2007-08-28 | Freescale Semiconductor, Inc. | Wirebonding insulated wire and capillary therefor |
-
1988
- 1988-04-12 JP JP63089711A patent/JPH01261838A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7261230B2 (en) * | 2003-08-29 | 2007-08-28 | Freescale Semiconductor, Inc. | Wirebonding insulated wire and capillary therefor |
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