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JPH02163950A - Mounting of semiconductor device - Google Patents

Mounting of semiconductor device

Info

Publication number
JPH02163950A
JPH02163950A JP63319079A JP31907988A JPH02163950A JP H02163950 A JPH02163950 A JP H02163950A JP 63319079 A JP63319079 A JP 63319079A JP 31907988 A JP31907988 A JP 31907988A JP H02163950 A JPH02163950 A JP H02163950A
Authority
JP
Japan
Prior art keywords
semiconductor device
circuit board
electrode
conductive adhesive
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63319079A
Other languages
Japanese (ja)
Other versions
JPH0666355B2 (en
Inventor
Yoshihiro Bessho
芳宏 別所
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP63319079A priority Critical patent/JPH0666355B2/en
Publication of JPH02163950A publication Critical patent/JPH02163950A/en
Publication of JPH0666355B2 publication Critical patent/JPH0666355B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To electrically connect a semiconductor device to a circuit board with good reliability by a method wherein a convex bump electrode composed of a two-step shape of a pedestal part and a top part is installed on an electrode pad part of the semiconductor device and the bump electrode is connected electrically to a terminal electrode part on the circuit board via a conductive adhesive having flexibility. CONSTITUTION:When a semiconductor device 1 is mounted on a terminal electrode part 5 on a circuit board 6, a convex bump electrode 3 composed of a two-step shape of a pedestal part and a top part is formed on an electrode pad part 2 of the semiconductor device 1; the bump electrode 3 is connected electrically to the terminal electrode part 5 on the circuit board 6 via a conductive adhesive 4 having flexibility. For example, a two-step-shaped and projected bump electrode 3 is formed in advance on an electrode pad part 2 of a semiconductor device 1 ; a conductive adhesive 4 having flexibility is formed on the bump electrode 3 by a transcription operation or a printing operation. After that, the semiconductor device 1 is aligned with a terminal electrode part 5 of a circuit board 6 in a face-down manner, the semiconductor device 1 is mounted on the circuit board 6; after that, the conductive adhesive 4 is hardened by heating.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体装置と回路基板上の端子電極部との電
気的接続に関するものであり、特に、導電性接着剤を用
いたフェースダウンボンディング法に係る半導体装置の
実装方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an electrical connection between a semiconductor device and a terminal electrode portion on a circuit board, and in particular to a face-down bonding method using a conductive adhesive. The present invention relates to a method for mounting such a semiconductor device.

従来の技術 従来、電子部品の接続端子と回路基板上の回路パターン
端子との接続には半田付けがよく利用されてきたが、近
年、例えばICフラットパッケージ等の小型化と、接続
端子の増加により、接続端子間、いわゆるピッチ間隔が
次第に狭くなり、従来の半田付は技術で対処することが
次第に困難になって来た。
Conventional technology In the past, soldering was often used to connect the connection terminals of electronic components and the circuit pattern terminals on the circuit board, but in recent years, soldering has become more popular due to the miniaturization of IC flat packages and the increase in the number of connection terminals. As the so-called pitch distance between connecting terminals becomes narrower and narrower, conventional soldering technology becomes increasingly difficult to overcome.

そこで、最近では裸の半導体装置を回路基板上の端子電
極部に直付けして実装面積の効率的使用を図ろうとする
方法が開発されてきた。
Therefore, recently, a method has been developed in which a bare semiconductor device is directly attached to a terminal electrode portion on a circuit board in order to efficiently use the mounting area.

なかでも、半導体装置を回路基板上に接続するに際し、
半導体装置を下向きにして、あらかじめ半導体装置の電
極パッド上にCr、CuおよびAUの3層の金属蒸着膜
部を形成した後、レジストをかけて半田をメツキや蒸着
によって金属蒸着膜部上に形成し、余分なレジストと金
属蒸着膜を除去して形成した半田バンプ電極を高温に加
熱して融着する方法が、接続後の機械的強度が強く、接
続が一括にできることなどから有効な方法であるとされ
ている。(工業調査会、1980年1月15日発行、日
本マイクロエレクトロニクス協会績、rlC化実装技術
」) 以下図面を参照しながら、上述した従来の半田バンプに
よる半導体装置の実装方法の一例について説明する。
Among these, when connecting semiconductor devices to circuit boards,
With the semiconductor device facing downward, a three-layer metal vapor deposition film of Cr, Cu, and AU is formed on the electrode pad of the semiconductor device in advance, and then a resist is applied and solder is formed on the metal vapor deposition film by plating or vapor deposition. However, the method of heating and fusing solder bump electrodes formed by removing excess resist and metal vapor deposition film at high temperatures is an effective method because the mechanical strength after connection is strong and connections can be made all at once. It is said that there is. (Industrial Research Group, January 15, 1980, published by Japan Microelectronics Association, RLC Mounting Technology) An example of the above-mentioned conventional method for mounting a semiconductor device using solder bumps will be described below with reference to the drawings.

第3図は従来の半田バンプによる半導体装置の実装方法
の概略説明図である。第3図において、7は半導体装置
であり、8は半田バンプ電極である。9は端子電極部で
あり、10は回路基板である。
FIG. 3 is a schematic explanatory diagram of a conventional method for mounting a semiconductor device using solder bumps. In FIG. 3, 7 is a semiconductor device, and 8 is a solder bump electrode. 9 is a terminal electrode portion, and 10 is a circuit board.

以上のように構成された半田バンプによる半導体装置の
実装方法について、以下その概略について説明する。
A method for mounting a semiconductor device using solder bumps configured as described above will be briefly described below.

まず、半導体装置7のAIからなる電極パッド部にあら
かじめ半田バンプ電極8をメツキ等により形成しておき
、この半導体装置7をフェースダウンで回路基板10の
端子電極部9に位置合せを行った後、200〜300°
Cの高温に加熱して半田バンプ電極8を溶融し、回路基
板10の端子電極部9に融着させることによって半導体
装置の実装を行うものである。
First, solder bump electrodes 8 are formed in advance on the electrode pads made of AI of the semiconductor device 7 by plating or the like, and the semiconductor device 7 is aligned face-down with the terminal electrodes 9 of the circuit board 10. , 200~300°
The semiconductor device is mounted by heating to a high temperature of C to melt the solder bump electrodes 8 and fusing them to the terminal electrode portions 9 of the circuit board 10.

発明が解決しようとする課題 しかしながら上記のような半田バンプ電極による半導体
装置の実装方法においては、 (1)  半田を熔融する際に高温に加熱する必要があ
り、熱応力の影響を受は易い。
Problems to be Solved by the Invention However, in the method of mounting a semiconductor device using solder bump electrodes as described above, (1) it is necessary to heat the solder to a high temperature when melting it, and it is easily affected by thermal stress.

(2)半田による接続のために回路基板側の端子電極部
が半田接続可能なものである必要があり、汎用性に欠け
る。
(2) Since the connection is made by soldering, the terminal electrode portion on the circuit board side must be able to be connected by soldering, which lacks versatility.

(3)半田バンプ電極を形成する半田が加熱溶融する際
に拡がり、隣接とショートが発生する危険がある。
(3) When the solder forming the solder bump electrode is heated and melted, it spreads and there is a risk of short-circuiting with the adjacent electrode.

(4)熱膨張係数の異なるSiと回路基板とを硬度の高
い半田のみで接続しているため、熱応力に対して非常に
脆い。
(4) Since Si having different coefficients of thermal expansion and the circuit board are connected only by hard solder, it is extremely brittle against thermal stress.

などといった課題を存していた。There were issues such as:

本発明は上記の課題に鑑みてなされたものであり、その
目的とする所は、半導体装置と回路基板とを信頼性良く
電気的な接続を行うことのできる半導体装置の実装方法
を提供するものである。
The present invention has been made in view of the above problems, and its purpose is to provide a method for mounting a semiconductor device that can electrically connect a semiconductor device and a circuit board with high reliability. It is.

課題を解決するための手段 本発明は上記の課題を解決するため、半導体装置の回路
基板上の端子電極部への実装方法において、半導体装置
の電極パッド部上に台座部と頂上部の2段形状からなる
凸型のバンプ電極を備え、該バンプ電極が可撓性を有す
る導電性接着剤を介して回路基板上の端子電極部に電気
的に接続することを特徴として、信頼性の高い半導体装
置の電気的接続を実現しようとするものである。
Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a method for mounting a semiconductor device onto a terminal electrode portion on a circuit board. A highly reliable semiconductor, characterized in that it has a convex bump electrode, and the bump electrode is electrically connected to a terminal electrode portion on a circuit board via a flexible conductive adhesive. The purpose is to realize electrical connection of devices.

作用 本発明は上記した方法によって、半導体装置の電極パッ
ド部にあらかじめ形成した2段形状で凸型のバンプ電極
を可撓性を有する導電性接着剤を介して回路基板上の端
子電極に接続することにより、応力に対して安定で、か
つ、微小ピッチの接続においても隣接とショートのない
、信頼性の高い半導体装置の電気的な接続が実現できる
Operation The present invention connects a two-step convex bump electrode formed in advance on an electrode pad portion of a semiconductor device to a terminal electrode on a circuit board via a flexible conductive adhesive by the method described above. As a result, it is possible to realize highly reliable electrical connections of semiconductor devices that are stable against stress and free from short-circuits to adjacent devices even in connection with a minute pitch.

実施例 以下、本発明の一実施例の半導体装置の実装方法につい
て、図面を参照しながら説明する。
EXAMPLE Hereinafter, a method for mounting a semiconductor device according to an example of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例における半導体装置の実装方
法による接続部の拡大図であり、第2図は、本発明の一
実施例における半導体装置の実装方法の概略説明図であ
る。
FIG. 1 is an enlarged view of a connection portion according to a method for mounting a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a schematic explanatory diagram of a method for mounting a semiconductor device according to an embodiment of the present invention.

第1図および第2図において、1は半導体装置であり、
2は電極パッド部である。3は2段形状で凸型のバンプ
電極であり、4は可撓性を有する導電性接着剤である。
In FIG. 1 and FIG. 2, 1 is a semiconductor device,
2 is an electrode pad section. 3 is a two-stage convex bump electrode, and 4 is a flexible conductive adhesive.

5は端子電極部であり、6は回路基板である。5 is a terminal electrode portion, and 6 is a circuit board.

以上のように構成された半導体装置の実装方法について
、以下図面を用いて説明する。
A method for mounting a semiconductor device configured as described above will be described below with reference to the drawings.

まず、半導体装置1の電極パッド部2上にあらかじめ2
段形状で凸型のバンプ電極3を形成しておき、このバン
プ電橋3上に転写や印刷によって、可撓性を有する導電
性接着剤4を形成する。
First, place two pads on the electrode pad portion 2 of the semiconductor device 1 in advance.
A stepped and convex bump electrode 3 is formed in advance, and a flexible conductive adhesive 4 is formed on the bump bridge 3 by transfer or printing.

その後、この半導体装置1をフェースダウンで回路基板
6の端子電極部5に位置合せを行い、回路基板6上に半
導体装置1をマウントした後、加熱により導電性接着剤
4を硬化させることによって、第1図および第2図に示
す様に、半導体装置1が2段形状で凸型のバンプ電極3
および可撓性を有する導電性接着剤4を介して回路基板
6の端子電極5に電気的に接続される。
After that, this semiconductor device 1 is aligned face-down with the terminal electrode part 5 of the circuit board 6, and after mounting the semiconductor device 1 on the circuit board 6, the conductive adhesive 4 is cured by heating. As shown in FIGS. 1 and 2, a semiconductor device 1 has a two-stage convex bump electrode 3.
And it is electrically connected to the terminal electrode 5 of the circuit board 6 via the flexible conductive adhesive 4 .

このとき、導電性接着剤4には可撓性を有するものを用
いているため、半導体装置1を構成するSi基板と回路
基板6を構成するたとえばアルミナ基板やガラス基板と
の熱膨張係数の差から起因する熱応力を緩和することが
でき、接続部の安定性が向上する。
At this time, since the conductive adhesive 4 is flexible, there is a difference in thermal expansion coefficient between the Si substrate that constitutes the semiconductor device 1 and the alumina substrate or glass substrate that constitutes the circuit board 6. Thermal stress caused by this can be alleviated, improving the stability of the connection.

また、導電性接着剤4の硬化のための加熱は、従来例の
半田バンプによる接続に比べて低温で行えるため、熱硬
化時の熱応力による影響を軽減することができ、掻めて
安定な接続が得られる。
In addition, since the heating for curing the conductive adhesive 4 can be performed at a lower temperature than the conventional connection using solder bumps, the influence of thermal stress during thermosetting can be reduced, and the adhesive can be easily and stably bonded. You get a connection.

さらに、バンプ電極3が台座部と頂上部の2段形状から
なる凸型であるため、半導体装置1を回路基板6に接続
したときの導電性接着剤4の拡がりが規制でき、微細ピ
ッチでの接続においても、隣接とショートのない信頼性
の高い接続が実現できる。
Furthermore, since the bump electrodes 3 are convex and have a two-stage shape with a pedestal and a top, it is possible to restrict the spread of the conductive adhesive 4 when the semiconductor device 1 is connected to the circuit board 6, and it is possible to control the spread of the conductive adhesive 4 at a fine pitch. Highly reliable connections with no short circuits can be achieved in connection as well.

しかも、バンプ電極3と回路基板6の端子電極部5の電
気的接続は導電性接着剤4による接着によって行うため
、回路基板6の端子電極部5の材質は配線材料であれば
いかなるものでもよく、汎用性がある。
Moreover, since the electrical connection between the bump electrode 3 and the terminal electrode section 5 of the circuit board 6 is made by adhesion using the conductive adhesive 4, the material of the terminal electrode section 5 of the circuit board 6 may be any wiring material. , versatile.

以上のようにして、半導体装置1を回路基板6に極めて
安定で信鎖性よく、かつ、高密度に実装することが可能
となる。
As described above, it becomes possible to mount the semiconductor device 1 on the circuit board 6 extremely stably, with good reliability, and with high density.

なお、本実施例において2段形状からなる凸型のバンプ
電極3をAuよりなるものとしたが、その材質はAuに
限られるものでなく、たとえば、Cuなどの他の金属に
よって形成してもよい。
In this embodiment, the two-stage convex bump electrode 3 is made of Au, but its material is not limited to Au. For example, it may be made of other metals such as Cu. good.

また、バンプ電極3の形成は、従来のメツキによる形成
方法によるものに限られたものでなく、いかなる方法に
よる形成を行ったものでもよく、台座部と頂上部の2段
形状からなる凸型のものであれば何でもよい。
Further, the formation of the bump electrode 3 is not limited to the conventional method of forming by plating, but may be formed by any method. Anything is fine.

さらに、導電性接着剤4の材質は、可撓性を有するもの
であれば何でもよく、たとえば、シリコーン系のように
可撓性を有する導電性接着剤でもよく、また、エポキシ
系、ポリイミド系、アクリル系あるいはフェノール系な
どの導電性接着剤に可撓性を付与したものを用いること
もできる。
Further, the conductive adhesive 4 may be made of any material as long as it has flexibility. For example, it may be a flexible conductive adhesive such as silicone, or may be made of epoxy, polyimide, etc. It is also possible to use a conductive adhesive such as acrylic or phenolic adhesive with flexibility.

また、本実施例において導電性接着剤4をバンプ電極3
上に形成するとしたが、導電性接着剤4を基板6上の端
子電極部5側に印刷や転写法などを用いて形成してもよ
い。
In addition, in this embodiment, the conductive adhesive 4 is applied to the bump electrode 3.
Although the conductive adhesive 4 is formed on the terminal electrode portion 5 side of the substrate 6, the conductive adhesive 4 may be formed on the terminal electrode portion 5 side of the substrate 6 using a printing or transfer method.

さらに、導電性接着剤4に分散する導電フィラーには、
Ag、Au5PdSN i、Cなどの金属や合金の粉体
を、単体もしくは組み合せて用いることができ、その粒
径、形は特に限定されるものでない。
Furthermore, the conductive filler dispersed in the conductive adhesive 4 includes
Powders of metals or alloys such as Ag, Au5PdSN i, and C can be used alone or in combination, and the particle size and shape are not particularly limited.

発明の効果 以上に説明したように、本発明の半導体装置の実装方法
によれば、可撓性を存する導電性接着剤によって半導体
装置の電極バンド部上に形成した台座部と頂上部の2段
形状からなる凸型のバンプ電極と回路基板上の端子電極
とを接着によって電気的な接続を行うため、応力に対し
て極めて安定な電気的な接続が実現でき、かつ、微細ピ
ッチでの接続においても、隣接とショートのない信頼性
の高い接続が実現できるため、極めて実用上価値の高い
ものである。
Effects of the Invention As explained above, according to the method for mounting a semiconductor device of the present invention, two stages of a pedestal part and a top part are formed on an electrode band part of a semiconductor device using a flexible conductive adhesive. Since the electrical connection is made by adhesion between the convex bump electrode and the terminal electrode on the circuit board, it is possible to realize an extremely stable electrical connection against stress, and it is possible to connect at a fine pitch. It is also of extremely high practical value because it can realize highly reliable connections without short circuits with adjacent connections.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例における半導体装置の実装方
法による接続部の拡大図、第2図は、本発明の一実施例
における半導体装置の実装方法の概略を説明するための
正面図、第3図は従来の半田バンプによる半導体装置の
実装方法の概略を説明するための正面図である。 1.7・・・・・・半導体装置、2・・・・・・電極パ
ッド部、3・・・・・・2段形状で凸型のバンプ電極、
4・・・・・・可撓性を有する導電性接着剤、5.9・
・・・・・端子1を橋部、6.10・・・・・・回路基
板、8・・・・・・半田バンプ電極。
FIG. 1 is an enlarged view of a connection part according to a method for mounting a semiconductor device in an embodiment of the present invention, and FIG. 2 is a front view for explaining the outline of a method for mounting a semiconductor device in an embodiment of the present invention. FIG. 3 is a front view for explaining the outline of a conventional method for mounting a semiconductor device using solder bumps. 1.7... Semiconductor device, 2... Electrode pad portion, 3... Two-stage convex bump electrode,
4... Flexible conductive adhesive, 5.9.
...Terminal 1 is the bridge part, 6.10...Circuit board, 8...Solder bump electrode.

Claims (3)

【特許請求の範囲】[Claims] (1)半導体装置の回路基板上の端子電極部への実装方
法において、半導体装置の電極パッド部上に台座部と頂
上部の2段形状からなる凸型のバンプ電極を備え、該バ
ンプ電極を可撓性を有する導電性接着剤を介して回路基
板上の端子電極部に電気的に接続することを特徴とする
半導体装置の実装方法。
(1) In a method for mounting a semiconductor device on a terminal electrode portion on a circuit board, a convex bump electrode having a two-stage shape of a pedestal portion and a top portion is provided on an electrode pad portion of the semiconductor device, and the bump electrode is mounted on a terminal electrode portion of a circuit board. 1. A method for mounting a semiconductor device, comprising electrically connecting to a terminal electrode portion on a circuit board via a flexible conductive adhesive.
(2)バンプ電極が、Auからなることを特徴とする特
許請求の範囲第1項記載の半導体装置の実装方法。
(2) The method for mounting a semiconductor device according to claim 1, wherein the bump electrode is made of Au.
(3)導電性接着剤が、エポキシ系、ポリイミド系、ア
クリル系、フェノール系あるいはシリコーン系の導電性
接着剤に可撓性を付与したものからなることを特徴とす
る特許請求の範囲第1項記載の半導体装置の実装方法。
(3) Claim 1, characterized in that the conductive adhesive is made of an epoxy-based, polyimide-based, acrylic-based, phenol-based, or silicone-based conductive adhesive with flexibility added. A method for mounting the semiconductor device described.
JP63319079A 1988-12-16 1988-12-16 Semiconductor device mounting body and mounting method thereof Expired - Lifetime JPH0666355B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63319079A JPH0666355B2 (en) 1988-12-16 1988-12-16 Semiconductor device mounting body and mounting method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63319079A JPH0666355B2 (en) 1988-12-16 1988-12-16 Semiconductor device mounting body and mounting method thereof

Publications (2)

Publication Number Publication Date
JPH02163950A true JPH02163950A (en) 1990-06-25
JPH0666355B2 JPH0666355B2 (en) 1994-08-24

Family

ID=18106267

Family Applications (1)

Application Number Title Priority Date Filing Date
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Cited By (6)

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JPH04335542A (en) * 1991-05-10 1992-11-24 Matsushita Electric Ind Co Ltd Electrode for semiconductor device and mounted body
JPH06302650A (en) * 1993-04-14 1994-10-28 Nec Corp Semiconductor device
JPH08213425A (en) * 1995-02-03 1996-08-20 Matsushita Electron Corp Semiconductor device and manufacture thereof
US6153938A (en) * 1997-07-28 2000-11-28 Hitachi, Ltd. Flip-chip connecting method, flip-chip connected structure and electronic device using the same
JP2008227476A (en) * 2007-02-15 2008-09-25 Semiconductor Energy Lab Co Ltd Photoelectric conversion device, electronic device, and method for manufacturing photoelectric conversion device
US8076785B2 (en) 2005-06-28 2011-12-13 Fujitsu Semiconductor Limited Semiconductor device

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Publication number Priority date Publication date Assignee Title
JP6208951B2 (en) * 2013-02-21 2017-10-04 浜松ホトニクス株式会社 Photodetection unit

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JPS604230A (en) * 1983-06-21 1985-01-10 Sharp Corp Bonding method of semiconductor chip
JPS6290938A (en) * 1985-10-17 1987-04-25 Matsushita Electric Ind Co Ltd semiconductor equipment
JPS6297340A (en) * 1985-10-23 1987-05-06 Matsushita Electric Ind Co Ltd Electrical connection method of IC chip
JPS63161015A (en) * 1986-12-25 1988-07-04 Sumitomo Bakelite Co Ltd Electrically conductive resin paste
JPS63230768A (en) * 1987-03-20 1988-09-27 Mitsubishi Electric Corp silicone conductive resin
JPS63275127A (en) * 1987-05-07 1988-11-11 Matsushita Electric Ind Co Ltd Semiconductor chip mounting body
JPS63299242A (en) * 1987-05-29 1988-12-06 Shin Etsu Polymer Co Ltd Connection of semiconductor device

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JPS604230A (en) * 1983-06-21 1985-01-10 Sharp Corp Bonding method of semiconductor chip
JPS6290938A (en) * 1985-10-17 1987-04-25 Matsushita Electric Ind Co Ltd semiconductor equipment
JPS6297340A (en) * 1985-10-23 1987-05-06 Matsushita Electric Ind Co Ltd Electrical connection method of IC chip
JPS63161015A (en) * 1986-12-25 1988-07-04 Sumitomo Bakelite Co Ltd Electrically conductive resin paste
JPS63230768A (en) * 1987-03-20 1988-09-27 Mitsubishi Electric Corp silicone conductive resin
JPS63275127A (en) * 1987-05-07 1988-11-11 Matsushita Electric Ind Co Ltd Semiconductor chip mounting body
JPS63299242A (en) * 1987-05-29 1988-12-06 Shin Etsu Polymer Co Ltd Connection of semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04335542A (en) * 1991-05-10 1992-11-24 Matsushita Electric Ind Co Ltd Electrode for semiconductor device and mounted body
JPH06302650A (en) * 1993-04-14 1994-10-28 Nec Corp Semiconductor device
JPH08213425A (en) * 1995-02-03 1996-08-20 Matsushita Electron Corp Semiconductor device and manufacture thereof
US6153938A (en) * 1997-07-28 2000-11-28 Hitachi, Ltd. Flip-chip connecting method, flip-chip connected structure and electronic device using the same
US8076785B2 (en) 2005-06-28 2011-12-13 Fujitsu Semiconductor Limited Semiconductor device
US8810043B2 (en) 2005-06-28 2014-08-19 Fujitsu Semiconductor Limited Semiconductor device
JP2008227476A (en) * 2007-02-15 2008-09-25 Semiconductor Energy Lab Co Ltd Photoelectric conversion device, electronic device, and method for manufacturing photoelectric conversion device
US8207589B2 (en) 2007-02-15 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device
US8592936B2 (en) 2007-02-15 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device

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