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JPH02170935A - Copper alloy with good direct bonding properties - Google Patents

Copper alloy with good direct bonding properties

Info

Publication number
JPH02170935A
JPH02170935A JP88324788A JP32478888A JPH02170935A JP H02170935 A JPH02170935 A JP H02170935A JP 88324788 A JP88324788 A JP 88324788A JP 32478888 A JP32478888 A JP 32478888A JP H02170935 A JPH02170935 A JP H02170935A
Authority
JP
Japan
Prior art keywords
less
weight
copper alloy
wire
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP88324788A
Other languages
Japanese (ja)
Inventor
Masahiro Tsuji
正博 辻
Hiroaki Watanabe
宏昭 渡辺
Takatoki Fukuda
福田　孝祝
Masanori Tokita
時田　正憲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tatsuta Electric Wire and Cable Co Ltd
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Tatsuta Electric Wire and Cable Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd, Tatsuta Electric Wire and Cable Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP88324788A priority Critical patent/JPH02170935A/en
Publication of JPH02170935A publication Critical patent/JPH02170935A/en
Pending legal-status Critical Current

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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 ［産業上の利用分野コ 本発明は半導体機器のリード材用銅合金に、ワイヤーボ
ンディング用リード線を直接接着（ダイレクトボンディ
ング）する事を可能にするダイレクトボンディング性の
良好な銅合金に関する。[Detailed Description of the Invention] [Industrial Field of Application] The present invention has good direct bonding properties that enable lead wires for wire bonding to be directly bonded to copper alloys for lead materials of semiconductor devices (direct bonding). related to copper alloys.

［従来の技術］ 従来、゛ト導体機器は、まず銅または銅合金のリード材
用素材を打抜き又はエツチングにより所定の形状に成形
し、次に、半導体素子の接合部分および半導体素子とリ
ード＋４とを金線等でワイヤーボンディングするために
、リード材の所定部分へメツキを行い、ついでメツキさ
れた部分へ半導体素子をダイボンドしさらに半導体素子
とリード（イをワイヤーボンディング川リード線でワイ
ヤーボンディングを行い、最後にこれを月１１−シて製
品としていた。[Prior Art] Conventionally, conductive devices have been manufactured by first forming copper or copper alloy lead material into a predetermined shape by punching or etching, and then forming the bonding portion of the semiconductor element and the semiconductor element and lead +4. In order to wire-bond the lead material with gold wire, etc., plate the predetermined part of the lead material, then die-bond the semiconductor element to the plated part, and then wire-bond the semiconductor element and the lead (a) with the wire-bonded lead wire. Finally, it was made into a product on November 11th.

これから分かるように、リード材と半導体素子および半
導体素子とリード祠との接合のためには、必ずメツキを
必要としていた。As can be seen from this, plating is always required for joining the lead material and the semiconductor element and the semiconductor element and the lead hole.

ところがメツキ操作自体は、微小な個所へのメツキであ
るために、非常に高い精度を必要とし、メツキの良否が
ダイボンドおよびワイヤーボンドに直接影響を与えて、
場合により不良品が発生した。However, the plating operation itself requires extremely high precision because it involves plating minute spots, and the quality of the plating directly affects the die bond and wire bond.
In some cases, defective products occurred.

また半導体素子およびリード材との材質の関係および耐
久性、電導性、付若性などからみて、金または銀のメツ
キが行われているが、これが半導体機器の非常なコスト
高を招いた。In addition, gold or silver plating is used in view of the material relationship between the semiconductor element and the lead material, durability, conductivity, and youthfulness, but this has led to a significant increase in the cost of semiconductor devices.

このためメッキ厚やメツキ面積を減少させたり、また前
記金や銀にかえて、卑金属を用いることなどを検討して
いるが、あまり画期的な効果は上っていない。For this reason, attempts have been made to reduce the plating thickness and area, and to use base metals instead of gold and silver, but these efforts have not yielded any groundbreaking results.

さらに半導体素子のダイボンドのみをペーストで代替さ
せて接合する技術が開発されて、半導体素子のダイボン
ドの際のメツキが一応不要となったが、あいかわらずリ
ード材と半導体素子とを金線で接合するワイヤーボンデ
ィングの為にはメツキが必要であり、工程数はいっこう
に減少せず、根本的な解決策にはなっていない。Furthermore, a technology has been developed to replace only the die bonding of semiconductor elements with paste and bonding, and plating is no longer necessary when die bonding semiconductor elements, but the wire used to bond the lead material and semiconductor element with gold wire still remains. Plating is required for bonding, and the number of steps has not been reduced at all, so this is not a fundamental solution.

ところで、ダイレクトボンディング性を改善させるべく
、過去にリードフレーム材料の観点から若干の検討は行
われている。例えば特公昭６２−４６０７１では材料の
表面粗さが最大高さ（Ｒｍａｘ）で０．５μ−以下とす
る事、あるいはさらに折出物、介在物等の単一面積が３
Ｘ１０’ａｌ１２以下にする事でダイレクトボンディン
グ性が改善される事がわかっている。Incidentally, in order to improve direct bonding properties, some studies have been conducted in the past from the viewpoint of lead frame materials. For example, in Japanese Patent Publication No. 62-46071, the maximum height (Rmax) of the surface roughness of the material must be 0.5μ or less, or the single area of precipitates, inclusions, etc.
It has been found that direct bonding properties can be improved by setting X10'al12 or less.

〔発明が解決しようとする課題］ 実際の製品に上記公知技術を適用した場合、要求される
信頼性が高いＩＣ，ＬＳＩ５ＶＬＳＩ製品としては、ま
だまだ満足できるレベルにはなっておらず、一部トラン
シスター用に使用されている現状である。[Problem to be solved by the invention] When the above-mentioned known technology is applied to an actual product, it is still not at a satisfactory level as a highly reliable IC, LSI5VLSI product, and some transistors Currently, it is used for various purposes.

従って、ダイレクトボンディング性という観点から一層
の改善をはかり、トランジスターからＶＬＳＩまでの全
ての半導体製品に適１１１できるリードフレーム用銅合
金が望まれている。Therefore, there is a need for a copper alloy for lead frames that is further improved in terms of direct bonding properties and is suitable for all semiconductor products from transistors to VLSI.

［課題を解決するための手段］ 本発明者らは、ダイレクトボンディング性に及はす種々
の材料因子について検討を行ったところ、材料の表面粗
さ規定はＲ１，１では不十分てあり、中心線平均粗さ（
Ｒａ）といった全体的な表面粗さのレベルの規定が必要
であることを見出した。従来Ｒ、、、０．５μＩ以下と
いわれていたが、一部Ｒ、、、０．５μｍを越えてもＲ
ａがある値以下であれば優れたダイレクトボンディング
性を示す事−５が判明した。[Means for Solving the Problems] The present inventors investigated various material factors that affect direct bonding properties, and found that R1.1 is insufficient for the surface roughness of the material, and that Line average roughness (
It has been found that it is necessary to specify the level of overall surface roughness such as Ra). Conventionally, R was said to be less than 0.5μI, but even if R exceeds 0.5μI in some cases, R
It was found that if a is below a certain value, excellent direct bonding properties are exhibited.

さらに、材料の硬さもある値以上にしなければならない
事を見出した。Furthermore, we discovered that the hardness of the material must also exceed a certain value.

そこで、本発明はＦｅ０．５〜５．０重量％、ＰＯ３０
１〜０．３重量９６を含み、残部Ｃｕ及び不可避不純物
からなる合金の材料表面を表面硬さが！！■１４０以上
でかつ、表面粗さが中心線平均粗さ（Ｒａ）で０．１５
μｉ以下、最大高さ（Ｒｍａｘ）で０．８μｍ以下とな
るように調整することにより、ワイヤーボンディング川
リード線を直接接８ｉ″＋１能としたことを特徴とする
ダイレクトボンディング性の良好な銅合金およびＦｅ０
．５〜５．０重量％、Ｐ　０．０１〜０．３重量９６を
含み、残部Ｃｕ及び不可避不純物からなる合金に副成分
としてＡ　ｓ　ｓ　Ｓ　ｂ　ｓ　Ｃｏ、Ｎｉ、Ｃｒ％　
Ｓｎ。Therefore, in the present invention, Fe0.5 to 5.0% by weight, PO30
The surface hardness of an alloy material containing 1 to 0.3 weight 96 and the balance consisting of Cu and unavoidable impurities! ! ■140 or more and surface roughness is 0.15 in center line average roughness (Ra)
Copper alloy with good direct bondability, characterized by making the wire bonding lead wire directly contactable by adjusting it so that it is less than μi and the maximum height (Rmax) is less than 0.8 μm. and Fe0
．． 5 to 5.0% by weight, P 0.01 to 0.3% by weight, and the balance consisting of Cu and unavoidable impurities, as subcomponents AsssSbsCo, Ni, Cr%
Sn.

ＡＩ、Ｔｉ、Ｚｒ、Ｓ　ｉ、　Ｍｇ５Ｂ　ｅ、Ｍｎ。AI, Ti, Zr, Si, Mg5Be, Mn.

Ｚ　ｎ　ｓ　　Ｉ　ｎ　ＳＢ　１Ｈｆ　ｓ希土類元素か
らなる群より選択された１　１−ｆｆ！又は２種以上を
総量で０．００１〜２　”　ｆｆ’　Ａｍ　９ｏ添加し
た合金の材料表面を表面硬さがＨｖ　１４０以上でかつ
表面粗さが中心線平均粗さ（Ｒａ）で０．１５μｍ以下
、最大高さ（Ｒｍａｘ）でロ、８μｍ以下となるように
調整することにより、ワイヤーボンディング用リード線
を直接接着可能としたことを特徴とするダイレクトボン
ディング性の良好な銅合金および前記合金で折出粒子が
５μｍ以下であるダイレクトボンディング性の良好な銅
合金および前記合金で酸素含Ｈ瓜がＩＯｐｐｍ以下であ
るダイレクトボンディング性の良好な銅合金である。1 1-ff selected from the group consisting of Z n s I n SB 1 Hf s rare earth elements! Or, the material surface of an alloy to which two or more types are added in a total amount of 0.001 to 2"ff' Am 9o has a surface hardness of Hv 140 or more and a surface roughness of 0.15 μm or less in terms of center line average roughness (Ra). A copper alloy with good direct bondability, and a copper alloy with good direct bondability, characterized in that a lead wire for wire bonding can be directly bonded by adjusting the maximum height (Rmax) to be 8 μm or less, and folding with the alloy. The present invention provides a copper alloy with good direct bonding properties in which the particle size is 5 μm or less, and a copper alloy with good direct bonding properties in which the oxygen-containing hydrogen content of the alloy is IOppm or less.

次に合金成分並びに他の条件の限定理由を説明する。Ｆ
ｅの含有量を０．５〜５．０重工％とする理由は、Ｆｅ
含白°量が０．５重量９６未満ではＰを０．０１重量％
以上添加しても高強度が得られず、逆にＦｅ含有量が５
．０重量％を越えると加工性が低下し、’ｈ　ｒｎ付は
性も低下する為である。Next, the reasons for limiting the alloy components and other conditions will be explained. F
The reason for setting the content of e to 0.5 to 5.0% is that Fe
If the white content is less than 0.5% by weight, P is 0.01% by weight.
Even if more than 5% of Fe content is added, high strength cannot be obtained;
．． This is because if it exceeds 0% by weight, workability will decrease, and if 'hrn' is added, properties will also decrease.

Ｐ含有量を０．０１〜０．３重量％とした理由は、Ｐ含
有量が０．０１重量％未満ではＦｅを０．５重量％以上
添加しても高強度でかつ高導電性を示す合金が得られず
、Ｐ含有量が０．３重量％を超えると加工性、導電性の
低下が著しくなり、また半田付は性も低下する為である
。The reason why the P content is set to 0.01 to 0.3% by weight is that when the P content is less than 0.01% by weight, high strength and high conductivity are obtained even if 0.5% by weight or more of Fe is added. This is because if no alloy is obtained and the P content exceeds 0.3% by weight, workability and conductivity will be significantly reduced, and solderability will also be reduced.

副成分として、Ａｓ、Ｓｂ、Ｃｏ、Ｎｉ。As subcomponents: As, Sb, Co, Ni.

Ｓ　　ｎ　％Ａ　　Ｉ　　、Ｔ　　ｉｓ　　Ｚ　　ｒ　
、　Ｓｔ　　Ｓ　ＭｇＳ　Ｂｅ。S n % A I , T is Z r
, St S MgS Be.

Ｍｎ、、Ｚｎ、Ｉｎ５Ｂ、Ｈｆｓ希土類元素からなる群
より選択された１種以上の総量が０．００１！ｆｉ量％
未満では高強度でかつ耐食性のある合金が得られず、ま
た２、０重量％を超えると導電性の低下及び半田付は性
の低下が著しくなる為である。The total amount of one or more selected from the group consisting of Mn, Zn, In5B, and Hfs rare earth elements is 0.001! fi amount%
If it is less than 2.0% by weight, it will not be possible to obtain an alloy with high strength and corrosion resistance, and if it exceeds 2.0% by weight, the conductivity and soldering properties will be significantly reduced.

また酸素含有量を１ｏｐｐＩＩ以下とした理由は、１０
ｐｐｍを越えるとめっき密６性が低下するためである。Also, the reason why the oxygen content was set to 1 oppII or less was 10
This is because if the content exceeds ppm, the plating density deteriorates.

折出粒子を５μｍ以下にした理由は、５μｍを越えると
半田付は性、めっき密着性が低下するためである。The reason why the precipitated particles are set to be 5 μm or less is that if the particle size exceeds 5 μm, solderability and plating adhesion will deteriorate.

表面粗さをＨｖ　１４０以上とした理由は、Ｈｖ　１４
０未満ではダイレクトボンディング後のボンディングワ
イヤーの接む強度が低く、樹脂封止工程−５での剥離を
起こす場合があるためである。The reason why the surface roughness is set to Hv 140 or higher is that Hv 14
This is because if it is less than 0, the contact strength of the bonding wire after direct bonding is low, and peeling may occur in the resin sealing step-5.

表面粗さを中心線平均粗さ（Ｒａ）で０．１５μａ以下
、最大高さ（Ｒｍａｘ）で０．８Ｂｃｍ以下とした理由
は、安定して強い接着を得るには、表面の平均的レベル
が低く、かつ部分的にし有害な粗さにならない事が必要
であるためである。The reason why the surface roughness was set to 0.15μa or less in center line average roughness (Ra) and 0.8Bcm or less in maximum height (Rmax) is that in order to obtain stable and strong adhesion, the average level of the surface is This is because it is necessary that the roughness is low and does not become harmful locally.

すなわち、本合金系ではＲａが０．１５μ■を超えると
接着強度が低下し、また、Ｒａが０．１５μｍ以下であ
ってもＲ，，１、が０．８μＩを超えるとその部分の密
む強度が低下し、前述したように樹脂封止工程等でのス
トレスにより剥離を起こす場合があり、信頼性を損ねる
ためである。In other words, in this alloy system, when Ra exceeds 0.15 μm, the adhesive strength decreases, and even if Ra is 0.15 μm or less, when R,,1, exceeds 0.8 μI, the area becomes dense. This is because the strength decreases and, as mentioned above, peeling may occur due to stress during the resin sealing process, which impairs reliability.

［実施例］ 第１表に示す本発明合金をインゴットから熱間圧延さら
には冷間圧延、焼鈍（溶体化焼鈍及び時効熱処理を含む
）のくり返しにより０．２５ａ＋ａ＋ｊ１７１さの板と
した。この際、表面硬さの違いは時効熱処理後圧延した
り、さらにそれを熱処理したり、過時効させたり、溶体
化させるといった方法を用い作り分けた。[Example] The alloy of the present invention shown in Table 1 was hot-rolled from an ingot, and then subjected to repeated cold rolling and annealing (including solution annealing and aging heat treatment) to obtain a plate having a length of 0.25a+a+j171. At this time, differences in surface hardness were created using methods such as rolling after aging heat treatment, further heat treatment, overaging, and solution treatment.

また、表面粗さは各種表面粗さの圧延ロールを用いたり
、最終板厚になった後に、各種粗さの表面研摩を行い作
製した。Moreover, the surface roughness was prepared by using rolling rolls with various surface roughnesses, or by surface polishing with various roughnesses after reaching the final plate thickness.

こうして製造した各種試料にワイヤーボンディングを行
い、見かけ上の接合状態を観察するとともに、プルテス
トによる接合強度のＩＩｐＪ定並びに破断箇所の観察を
行った。Wire bonding was performed on the various samples manufactured in this way, and the apparent bonding state was observed, and the bonding strength IIpJ was determined by a pull test and the fracture location was observed.

なお、ワイヤーボンディングとしたサーモソニック法を
用い、以下に示すボンディング条件で行った。Note that wire bonding was performed using the thermosonic method under the bonding conditions shown below.

ボンディングワイヤの材質及びワイヤ径：Ｃｕ線２５μ
鵡φ、雰し！ＩＩ気：１０Ｖｏ１％Ｈ２−Ａｒ、超音波
用カニ　　０．ＩＷＳＭ仮温度＝３００℃、加圧カニ　
ｇｏｇ　、時間：　２５ｍ５ｃｃ０結果を第１表に示す
、この結果からもわかるように表面硬さがＨｖ１４０以
上でかつ表面粗さもＲａで口、Ｌ５μｍ以下、Ｒ□１で
０．８μｍ以下という全ての条件がそろった時に始めて
、従来のメツキ打曲のボンディング性が得られるＪｔが
わかる。Bonding wire material and wire diameter: Cu wire 25μ
The atmosphere! II Qi: 10Vo1%H2-Ar, ultrasonic crab 0. IWSM temporary temperature = 300℃, pressure crab
gog, time: 25m5cc0 The results are shown in Table 1.As can be seen from the results, all conditions were met: the surface hardness was Hv140 or higher, the surface roughness was Ra, L5μm or less, and R□1, 0.8μm or less. Only when these are complete can you find out the Jt that will give you the bonding properties of conventional metsuki hitting.

第１表 ｉ’Ｆ　：　Ｎｏ、Ｉｌの組成中“ＭＭ“は”ミツシュ
メタル”である。Table 1 i'F: No. In the composition of Il, "MM" is "Mitsushmetal".

［発明の効果コ 本発明は、特定の成分系の銅合金で、表面硬さ、表面粗
さ等を特定の範囲内になるように作り込むことにより、
ダイレクトボンディング性を改善し、ＩＣ用としても信
頼性を持って使用可能ならしめたもので、しかもその製
作に当り、メツキ工程を省き、コストを大巾に減少させ
る極めて実用的価値の高いものである。[Effects of the Invention] The present invention provides a copper alloy with a specific component system, by making the surface hardness, surface roughness, etc. within a specific range.
This product has improved direct bonding properties and can be used reliably for IC applications, and also has extremely high practical value as it eliminates the plating process and greatly reduces costs. be.

Claims (4)

【特許請求の範囲】[Claims] （１）Ｆｅ０．５〜５．０重量％、Ｐ０．０１〜０．３
重量％を含み、残部Ｃｕ及び不可避不純物からなる合金
の材料表面を表面硬さがＨｖ１４０以上でかつ表面粗さ
が中心線平均粗さ（Ｒａ）で ０．１５μｍ以下、最大高さ（Ｒ＿ｍ＿ａ＿ｘ）で０．
８μｍ以下となるように調整することにより、ワイヤー
ボンディング用リード線を直接接着可能としたことを特
徴とするダイレクトボンディング性の良好な銅合金。(1) Fe0.5-5.0% by weight, P0.01-0.3
% by weight, the balance being Cu and unavoidable impurities, the material surface has a surface hardness of Hv140 or more, a surface roughness of 0.15 μm or less in center line average roughness (Ra), and a maximum height (R_m_a_x). 0.
A copper alloy with good direct bondability, which is characterized in that it can be directly bonded to a lead wire for wire bonding by adjusting the thickness to 8 μm or less. （２）Ｆｅ０．５〜５．０重量９６、Ｐ０．０１〜０．
３重量％を含み、残部Ｃｕ及び不可避不純物からなる合
金に副成分としてＡｓ、Ｓｂ、Ｃｏ、 Ｎｉ、Ｃｒ、Ｓｎ、Ａｌ、Ｔｉ、Ｚｒ、Ｓｉ、Ｍｇ、Ｂ
ｅ、Ｍｎ、Ｚｎ、Ｉｎ、Ｂ、Ｈｆ、希土類元素からなる
群より選択された１種又は２種以上を総量で０．００１
〜２．０重量％添加した合金の材料表面を表面硬さがＨ
ｖ１４０以上で、かつ、表面粗さが中心線平均粗さ（Ｒ
ａ）で０．１５μｍ以下、最大高さ（Ｒ＿ｍ＿ａ＿ｘ）
で０．８μｍ以下となるように調整することにより、ワ
イヤーボンディング用リード線を直接接着可能としたこ
とを特徴とするダイレクトボンディング性の良好な銅合
金。(2) Fe0.5-5.0 weight 96, P0.01-0.
As, Sb, Co, Ni, Cr, Sn, Al, Ti, Zr, Si, Mg, B as subcomponents in an alloy containing 3% by weight and the balance consisting of Cu and unavoidable impurities.
e, Mn, Zn, In, B, Hf, and one or more selected from the group consisting of rare earth elements in a total amount of 0.001
The material surface of the alloy containing ~2.0% by weight has a surface hardness of H.
v140 or more, and the surface roughness is center line average roughness (R
a) 0.15 μm or less, maximum height (R_m_a_x)
A copper alloy with good direct bondability, which is characterized in that a lead wire for wire bonding can be directly bonded by adjusting the thickness to be 0.8 μm or less. （３）折出粒子が５μｍ以下である特許請求範囲（１）
あるいは（２）記載の銅合金。(3) Claim (1) in which the precipitated particles are 5 μm or less
Or the copper alloy described in (2). （４）酸素含有量が１０ｐｐｍ以下である特許請求範囲
（１）、（２）あるいは（３）記載の銅合金。(4) The copper alloy according to claim (1), (2) or (3), which has an oxygen content of 10 ppm or less.
JP88324788A 1988-12-24 1988-12-24 Copper alloy with good direct bonding properties Pending JPH02170935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP88324788A JPH02170935A (en) 1988-12-24 1988-12-24 Copper alloy with good direct bonding properties

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP88324788A JPH02170935A (en) 1988-12-24 1988-12-24 Copper alloy with good direct bonding properties

Publications (1)

Publication Number Publication Date
JPH02170935A true JPH02170935A (en) 1990-07-02

Family

ID=18169683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP88324788A Pending JPH02170935A (en) 1988-12-24 1988-12-24 Copper alloy with good direct bonding properties

Country Status (1)

Country Link
JP (1) JPH02170935A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882442A (en) * 1995-10-20 1999-03-16 Olin Corporation Iron modified phosphor-bronze
WO2008041584A1 (en) * 2006-10-02 2008-04-10 Kabushiki Kaisha Kobe Seiko Sho Copper alloy plate for electrical and electronic components
JP2011252215A (en) * 2010-06-03 2011-12-15 Mitsubishi Shindoh Co Ltd Copper alloy strip material excellent in heat dissipation and adhesion and prepared for electronic apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882442A (en) * 1995-10-20 1999-03-16 Olin Corporation Iron modified phosphor-bronze
WO2008041584A1 (en) * 2006-10-02 2008-04-10 Kabushiki Kaisha Kobe Seiko Sho Copper alloy plate for electrical and electronic components
US8063471B2 (en) 2006-10-02 2011-11-22 Kobe Steel, Ltd. Copper alloy sheet for electric and electronic parts
JP2011252215A (en) * 2010-06-03 2011-12-15 Mitsubishi Shindoh Co Ltd Copper alloy strip material excellent in heat dissipation and adhesion and prepared for electronic apparatus

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