JPH03241742A - Cleaning device for semiconductor substrate - Google Patents
Cleaning device for semiconductor substrateInfo
- Publication number
- JPH03241742A JPH03241742A JP3730190A JP3730190A JPH03241742A JP H03241742 A JPH03241742 A JP H03241742A JP 3730190 A JP3730190 A JP 3730190A JP 3730190 A JP3730190 A JP 3730190A JP H03241742 A JPH03241742 A JP H03241742A
- Authority
- JP
- Japan
- Prior art keywords
- water
- tank
- wafer
- steam
- washing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 title claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000002347 injection Methods 0.000 claims abstract description 10
- 239000007924 injection Substances 0.000 claims abstract description 10
- 238000010793 Steam injection (oil industry) Methods 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 abstract description 28
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 23
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 11
- 239000000428 dust Substances 0.000 abstract description 11
- 238000003756 stirring Methods 0.000 abstract description 2
- 238000012993 chemical processing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 23
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000013019 agitation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体装置製造の際に、半導体基板（以下ウ
ェハーという）を薬液処理した後、付着した薬液を除去
するための洗浄装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a cleaning device for removing adhered chemical liquid after chemically treating a semiconductor substrate (hereinafter referred to as a wafer) during the manufacture of semiconductor devices. It is.
（従来の技術）
近年、半導体産業の急速な発展に伴い、半導体製品にお
いて高集積化、高密度化が要求され、信頼性ならびに歩
留まりの向上が最大の課題となっている。そして、特に
その中でも、ウェハーの薬液処理後の洗浄の良否がそれ
らを左右する要因の一つとなっている。(Prior Art) In recent years, with the rapid development of the semiconductor industry, there has been a demand for higher integration and higher density in semiconductor products, and improvements in reliability and yield have become the biggest issues. Among these, the quality of cleaning after the wafer is treated with a chemical liquid is one of the factors that influences them.
以下に、従来のウェハー洗浄装置について、第２図を参
照しながら説明する。従来の洗浄装置は一槽式で、水洗
槽１の底部に給水口２を有し、また上部には水を噴射す
るノズル３が設けられている。ウェハーを洗浄する際は
、ウェハー５を入れたラック４を水洗槽１に投入する。A conventional wafer cleaning apparatus will be described below with reference to FIG. A conventional cleaning device is a one-tank type, and has a water supply port 2 at the bottom of a washing tank 1, and a nozzle 3 for spraying water at the top. When cleaning wafers, the rack 4 containing the wafers 5 is placed in the washing tank 1.
半導体装置の製造において、必要不可欠な薬液のうち、
特にリン酸（Ｈ３ＰＯ４）等の粘度の高い薬液で処理し
た後の薬液除去では、最初、ノズル３から水を噴射させ
てウェハーに当て、付着した薬液を流し、次に、給水口
２からウェハーが浸漬するまで洗浄水６を供給してすす
ぎをする。という二段階の水洗方法を採っていた。Among the essential chemicals in the manufacturing of semiconductor devices,
In particular, when removing a chemical after treatment with a highly viscous chemical such as phosphoric acid (H3PO4), water is first jetted from the nozzle 3 and applied to the wafer to flush away the adhering chemical, and then the wafer is removed from the water supply port 2. Rinsing is performed by supplying washing water 6 until the product is immersed. A two-step washing method was used.
（発明が解決しようとする課題）
しかしながら、上記従来の洗浄方法では、リン酸の粘度
が水の２倍近くあり、短時間の水洗では完全に除去する
ことが困難であると同時に、同一水洗槽でのノズルから
の水の噴射では、リン酸の薬液処理でウェハーに付着し
、水洗によりウェハーから除去されて水洗槽に浮遊して
いるダスト等が、水洗槽を攪拌することによってウェハ
ーに再付着してしまうという問題があった。(Problems to be Solved by the Invention) However, in the conventional cleaning method described above, the viscosity of phosphoric acid is nearly twice that of water, and it is difficult to completely remove it in a short period of water washing. When water is jetted from a nozzle, dust, etc. that adheres to the wafer during the phosphoric acid chemical treatment, is removed from the wafer by water rinsing, and floats in the rinsing tank is reattached to the wafer by stirring the rinsing tank. There was a problem with this.
本発明は、上記従来の問題点を解決するもので、ウェハ
ーに付着したリン酸を除去する水洗時間を短縮し、水洗
槽の攪拌によるダスト等の再付着を防止するようにした
半導体基板の洗浄装置を提供することを目的とする。The present invention solves the above-mentioned conventional problems.The present invention shortens the washing time for removing phosphoric acid adhering to the wafer, and prevents the re-adhesion of dust and the like due to agitation in the washing tank. The purpose is to provide equipment.
（ｍ１題を解決するための手段）
この目的を達成するために、本発明の洗浄装置は、高圧
水蒸気噴射ノズルを備えたスチーム槽と、給水口及び水
の噴射ノズルを備えた水洗槽の二種から構成される。(Means for Solving Problem m1) In order to achieve this object, the cleaning device of the present invention has two parts: a steam tank equipped with a high-pressure steam injection nozzle, and a water washing tank equipped with a water supply port and a water injection nozzle. Composed of seeds.
（作 用）
ウェハーを洗浄する際は、まず、ウェハーを入れたラッ
クをスチーム槽に投入し、高圧スチームを吹き付けてウ
ェハーに付着したリン酸やダストの大部分を予め除去す
る。次いで、ラックを水洗槽に移し、ノズルからの水の
噴射と洗浄水への浸漬により洗浄を行なう。(Function) When cleaning wafers, first place the rack containing the wafers into a steam bath, and spray high-pressure steam to remove most of the phosphoric acid and dust attached to the wafers. Next, the rack is transferred to a washing tank and washed by jetting water from a nozzle and immersing it in washing water.
（実施例） 以下、図面を参照して実施例を詳細に説明する。(Example) Hereinafter, embodiments will be described in detail with reference to the drawings.
第１図は、本発明の一実施例を示したもので、第２図と
同一符号のものは同一のものを示しており、また、７は
水洗槽１に隣接して設けたスチーム槽であり、８はスチ
ーム噴射ノズルである。つまり、従来の給水口２及び水
の噴射ノズル３が設けられた水洗槽１にスチーム槽７を
組合せた二槽式となっている。FIG. 1 shows an embodiment of the present invention, and the same reference numerals as in FIG. 8 is a steam injection nozzle. In other words, it is a two-tank type in which a steam tank 7 is combined with a washing tank 1 provided with a conventional water supply port 2 and water injection nozzle 3.
ウェハーを洗浄する際は、リン酸による薬液処理後のウ
ェハー５をラック４に入れ、このラック４をまずスチー
ム槽７に投入する。そして噴射ノズル８から２ｋｇ／ａ
ｌＴ程度の圧力のスチームを噴射させ、ウェハー５に付
着したリン酸及びダストの大部分を除去する。次に、ラ
ック４を水洗槽１に移し、従来と同様の、ノズル３から
の水の噴射、続いて給水口２からの水の供給によるすす
ぎを行ない、洗浄を終わる。When cleaning wafers, the wafers 5 treated with a chemical solution using phosphoric acid are placed in a rack 4, and this rack 4 is first placed in a steam bath 7. And 2kg/a from injection nozzle 8
Most of the phosphoric acid and dust attached to the wafer 5 are removed by injecting steam at a pressure of about 1T. Next, the rack 4 is transferred to the washing tank 1, and rinsing is performed by jetting water from the nozzle 3 and subsequently by supplying water from the water supply port 2, as in the conventional method, to complete the washing.
以上のように構成された本実施例では、ウェハ３−
４−
−に付着したリン酸及びダストを予めスチーム槽で除去
することにより、水洗槽での水洗時間を短縮（例えば、
水洗槽内の水の比抵抗が１６ＭΩ・〔以上に回復する時
間が、従来の１０分から本実施例の５分に短縮）するこ
とができ、また水洗槽内での水洗前後のダスト付着数の
減少（例えば、水洗前後のウェハー表面当りの径が１〜
３μｍのダスト付着数が従来の１００個／ｓＱから本実
施例の１０個／ＳΩに減少）を実現することができた。In this embodiment configured as described above, by removing phosphoric acid and dust attached to the wafer 3-4- in advance in a steam tank, the washing time in the washing tank can be shortened (for example,
The specific resistance of the water in the washing tank can be reduced to 16 MΩ (the time for recovery to 16 MΩ or more is shortened from the conventional 10 minutes to 5 minutes in this example), and the number of dust adhering before and after washing in the washing tank can be reduced. decrease (for example, the diameter per wafer surface before and after washing with water is 1~
The number of attached dust particles of 3 μm was reduced from 100 pieces/sQ in the conventional case to 10 pieces/SΩ in this example.
なお、スチーム槽７でのスチームの噴射圧力は特に限定
するものではなく任意であり、またウェハーに対する噴
射の角度、位置、時間、量も特に限定するものではない
。さらに、リン酸以外の硫酸等の比較的高粘度の薬液処
理後のウェハー洗浄装置として使用しても構わない。Note that the pressure of steam jetted in the steam tank 7 is not particularly limited and is arbitrary, and the angle, position, time, and amount of steam jetted onto the wafer are also not particularly limited. Furthermore, it may be used as a wafer cleaning device after processing with a relatively high viscosity chemical solution such as sulfuric acid other than phosphoric acid.
（発明の効果）
以」説明したように、本発明によれば、高圧水蒸気噴射
ノズルを備えたスチーム槽と、給水口及び水の噴射ノズ
ルを備えた水洗槽の二槽式にすることにより、ウェハー
水洗時間の短縮やダスト再付着の防止を図ることができ
、半導体装置の信頼性ならびに歩留まりの向上と共に、
製造コストを低減することができる。(Effects of the Invention) As explained hereinafter, according to the present invention, by using a two-tank system including a steam tank equipped with a high-pressure steam injection nozzle and a washing tank equipped with a water supply port and a water injection nozzle, It can shorten the wafer washing time and prevent dust re-adhesion, improving the reliability and yield of semiconductor devices, and
Manufacturing costs can be reduced.
第１図は、本発明の一実施例の半導体基板洗浄装置の構
成図、第２図は、従来例の構成図である。
１ ・・・水洗槽、 ２・・・給水口、 ３・・・水噴
射ノズル、 ５ ・・・ウェハー ７ ・・・スチー
ム槽、 ８ ・・・スチーム噴射ノズル。FIG. 1 is a block diagram of a semiconductor substrate cleaning apparatus according to an embodiment of the present invention, and FIG. 2 is a block diagram of a conventional example. 1...Washing tank, 2...Water supply port, 3...Water injection nozzle, 5...Wafer 7...Steam tank, 8...Steam injection nozzle.
Claims (1)
洗浄装置であって、 高圧水蒸気噴射ノズルを備えたスチーム槽と、給水口及
び水の噴射ノズルを備えた水洗槽の二槽からなることを
特徴とする半導体基板の洗浄装置。[Claims] A cleaning device for cleaning semiconductor substrates after chemical treatment in the manufacture of semiconductor devices, comprising two tanks: a steam tank equipped with a high-pressure steam injection nozzle, and a rinsing tank equipped with a water supply port and a water injection nozzle. A semiconductor substrate cleaning device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3730190A JPH03241742A (en) | 1990-02-20 | 1990-02-20 | Cleaning device for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3730190A JPH03241742A (en) | 1990-02-20 | 1990-02-20 | Cleaning device for semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03241742A true JPH03241742A (en) | 1991-10-28 |
Family
ID=12493884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3730190A Pending JPH03241742A (en) | 1990-02-20 | 1990-02-20 | Cleaning device for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03241742A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990078433A (en) * | 1998-03-31 | 1999-10-25 | 가네코 히사시 | Cleaning/drying station and production line for semiconductor devices |
| KR100724696B1 (en) * | 2006-10-12 | 2007-06-04 | 제만호 | Steam Jet Wet Cleaner with Improved Cleaning Capability in Advanced Industrial Manufacturing Facilities |
| JP2008091498A (en) * | 2006-09-29 | 2008-04-17 | Fujitsu Ltd | Substrate processing apparatus and substrate processing method |
| JP2011031148A (en) * | 2009-07-31 | 2011-02-17 | Tdk Corp | Washing device using high-pressure steam |
-
1990
- 1990-02-20 JP JP3730190A patent/JPH03241742A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990078433A (en) * | 1998-03-31 | 1999-10-25 | 가네코 히사시 | Cleaning/drying station and production line for semiconductor devices |
| JP2008091498A (en) * | 2006-09-29 | 2008-04-17 | Fujitsu Ltd | Substrate processing apparatus and substrate processing method |
| US8361240B2 (en) | 2006-09-29 | 2013-01-29 | Fujitsu Semiconductor Limited | Substrate processing apparatus and substrate processing method |
| KR100724696B1 (en) * | 2006-10-12 | 2007-06-04 | 제만호 | Steam Jet Wet Cleaner with Improved Cleaning Capability in Advanced Industrial Manufacturing Facilities |
| JP2011031148A (en) * | 2009-07-31 | 2011-02-17 | Tdk Corp | Washing device using high-pressure steam |
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