JPH03257163A - Magnetron type sputtering device - Google Patents

Abstract

PURPOSE:To make improvement in the effective utilization rate of a target by disposing plural rotating magnet pairs on the rear side of the target at the distances varying from the central axis of the target. CONSTITUTION:The secondary electrons released from the target 13 impressed with a negative potential 11 are moved by receiving the influence of a magnetic field 15 formed by revolving two sets of the rotating magnet pairs 12 disposed at the distances varying by 1/3 the radius and 2/3 the radius from the central axis 10 of the target. Particularly the magnetic lines of force having the component parallel with the surface of the target 13 cause the cycloid motion of the secondary electrons on the target and, therefore, the ionization of Ar is accelerated and Ar ions are created. The Ar ions collide against the target 13 which is a cathode and drive out the target material, thereby depositing the target material onto a semiconductor substrate 17 on a substrate holder 16 and forming the thin film. Since the erosion of the target is generated along the magnetic field at this time, the erosion regions 14, 14A corresponding to double components are formed and, therefore, the effective utilization rate improves.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetron type sputtering apparatus, and particularly to a structure of a magnet for improving the effective utilization rate of a target.

[Conventional technology]

Conventionally, this type of magnetron type sputtering equipment uses the principles of leakage magnetic field type magnetron sputtering method and magnetic field compression type magnetron sputtering method to emit 2
The movement of the electrons promotes the ionization of Ar, and the formed Ar ions collide with a target, thereby forming a thin film on the semiconductor substrate.

A conventional magnetron type sputtering apparatus is shown in FIGS. 3(a) and 3(b).

Secondary electrons are emitted from the target 33 to which the negative potential 31 is applied. The emitted secondary electrons move under the influence of a magnetic field 35 formed by a pair of magnets 32 rotating around the central axis 10 of the target. In particular, magnetic lines of force having components parallel to the surface of the target 33 cause secondary electrons to move cycloidally on the target.
The ionization of r is promoted to produce Ar ions. Ar
The ions collide with the target 33, which is a cathode, and knock out the target material, which is deposited on the semiconductor substrate 37 held by the substrate holder 36 to form a thin film.

[Problem to be solved by the invention]

In the conventional magnetron sputtering apparatus described above, the distribution of magnetic lines of force for restraining the secondary electrons emitted from the cathode surface is
Because it is a single concentric circle that follows the rotation of the magnet,
The eroded region 34 of the target is also aligned along the magnetic field,
The disadvantage is that the effective utilization rate of the target is low.

In contrast to the conventional magnetron type sputtering apparatus described above, the present invention arranges two or more pairs of magnets that rotate at different distances from the central axis of the target or at different distances from the back surface of the target, and rotates on the back surface of the target. As a result, a concentric magnetic field equivalent to double or more is formed, so the difference is that the effective utilization rate of the target can be improved.

[Means to solve the problem]

The magnetron type sputtering apparatus of the present invention is a magnetron type sputtering apparatus having a target provided opposite to a substrate holder and a plurality of magnet pairs provided on the back surface of the target and revolving around the central axis of the target. The magnet pairs rotate and are arranged at different distances from the central axis or at different distances from the back surface of the target.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1(b) is a schematic cross-sectional view of a first embodiment of the present invention and a plan view as seen from the magnet pairing direction.

The secondary electrons emitted from the target 13 to which the negative potential 11 is applied are 1/3 of the radius from the central axis lO of the target.
A magnetic field 1 is formed by revolving two pairs of rotating magnets 12 arranged at different distances with a radius of 273 and a radius of 273.
Exercise under the influence of 5. In particular, magnetic lines of force with components parallel to the surface of the target 13 cause secondary electrons to move in a cycloid on the target, promoting ionization of Ar and creating Ar ions.The Ar ions collide with the target 13, which is a cathode, and move toward the target. The material is punched out and deposited on the semiconductor substrate 17 on the substrate holder 16 to form a thin film.

At this time, the erosion of the target occurs along the magnetic field, so
A double eroded area 14.14A is formed.

As a result, the effective utilization rate of the target of the conventional method (40 ~
45%), the effective utilization rate can be improved by about 1.5 times (60-70%).

FIGS. 2(a) and 2(b) are a schematic cross-sectional view and a plan view of a second embodiment of the present invention as seen from the opposite direction of the magnets.

This embodiment is the same as the first embodiment except that two pairs of rotating magnets 22 are arranged at equal distances from the central axis 10 of the target and at different distances from the back surface of the target (one approximately half the height of the other). be.

Even in the second embodiment configured in this way, the effective utilization rate can be improved by about 1.3 times (50 to 60%) compared to the conventional system.

Note that the revolution of the magnet pair is achieved, for example, by fixing a magnet holder that holds the magnet pair to a disc and rotating this disc, and the rotation of the magnet pair is achieved, for example, by rotating the center of the magnet holder. This is done by attaching it to a disk, installing a screw on the surface of the magnet holder, and rotating this screw with circulating cooling water.

〔Effect of the invention〕

As explained above, the present invention enables the Targeter I.
This has the effect of improving the effective utilization rate of.

Further, by expanding the erosion area of the target, there is also the effect that step coverage can be improved in the case where the step portion of the semiconductor substrate is blown away.

[Brief explanation of drawings]

FIGS. 1(a), (b) and 2(a), (b) are schematic sectional views and plan views of the first and second embodiments of the present invention as seen from the opposite direction of the magnet, and FIG. a). (b) is a schematic cross section of a conventional magnetron type sputtering device and a plan view seen from the opposite direction of the magnet. 10... Central axis, 11.21.31... Target power supply, 12, 22.32... Magnet pair, 13゜2
3.33...Target, 14.14A, 24°24
A, 34...Erosion area, 15,25.35...Magnetic field, 16.26.36...Substrate holder 17.27.
37...Semiconductor substrate.

Claims (1)

[Claims] In a magnetron type sputtering apparatus having a target provided opposite to a substrate holder and a plurality of magnet pairs provided on the back surface of the target and revolving around the central axis of the target, the magnet pairs rotate and rotate around the center axis of the target. A magnetron-type sputtering device characterized in that it is arranged at different distances from the axis or at different distances from the back side of the target.