JPH0353429A - Manufacture of plasma display panel - Google Patents

Abstract

PURPOSE:To prevent display quality and production yield from lowering by forming a dielectric layer which is comprised of layered bodies of a low melting point glass and silicon dioxide and covers an electrode by simultaneously sintering silicon and the low melting point glass. CONSTITUTION:After a solution 5a containing silicon is applied to the surface of a substrate 1 in which an electrode 3 is formed, a low melting point glass paste 5b is applied to the substrate. The silicon and the low melting point glass are sintered simultaneously by one heat treatment so as to form a dielectric layer 5 comprised of layered bodies of silicon dioxide and the low melting point glass and covering the electrode 3. In this way, productivity lowering is suppressed as much as possible, and lowering display quality and production yield owing to void formation in the sintering process of the dielectric layer are prevented.

Description

[Detailed Description of the Invention] [Summary] Regarding a method for manufacturing a plasma display panel, it is possible to suppress a decrease in mass productivity as much as possible while reducing display quality and yield due to the generation of voids when forming a dielectric layer. In order to prevent this, a solution containing silicon is applied to the surface of the substrate on which the electrodes are provided, and then a low melting point glass paste is applied, and silicon and low melting point glass are burnt out at the same time through a single heat treatment. By doing so, the dielectric layer made of a laminate of silicon dioxide and low melting point glass covering the electrode is characterized by being modified.

[Industrial application field] The present invention relates to a method for manufacturing a plasma display panel, and is particularly characterized by the shape and method of a dielectric layer. Plasma display panels (FDP) are becoming widely used as a display device to replace CRT displays because they can provide a large display screen with a small depth. Therefore, along with increasing the density of display dots and improving the quality of display screens, price reductions are progressing, and there is a demand for improved yields at the manufacturing stage. [Conventional technology]

FIG. 2 is a sectional view of a main part showing the structure of PDP II.

The PDP II covers the display side glass substrate 1, the back side glass substrate 2, and the x electrode 3 and Y Tri JJi 4, X, Y electrodes 3, 4 formed on the inner surface of each glass substrate 1.2, respectively. It is composed of dielectric layers 5 and 6 made of dielectric material such as magnesium oxide (MgO), protective layers 7 and 8 made of magnesium oxide (MgO), and a sealing glass 9 that seals the surrounding area. It is filled with gas. Light emission occurs due to discharge in the display cells defined at each intersection where the X electrode 3 and the Y electrode 4 intersect,
Characters and figures are displayed on the upper display surface of the glass substrate 1 by combining the display cells that emit light.

The X electrode 3 and the Y electrode 4 are each formed by a thin film method such as vapor deposition or sputtering.

The dielectric layers 5 and 6 are for protecting the X electrode 3 and the Y electrode 4 and for sustaining a discharge once caused by accumulation of wall charges by applying a discharge sustaining voltage.

Conventionally, the dielectric layers 5 and 6 have been formed by applying a low-melting glass paste such as lead glass to the surface of the glass substrate l or 2 on which the X electrode 3 or the Y electrode 4 is provided, and then burning the paste. It had been.

Conventionally, when the X electrode 3 or the Y electrode 4 is formed by a thick film method, in order to prevent the electrode metal from diffusing into the dielectric layer, for example, as in Japanese Patent Publication No. 12393/1983, In some cases, a metal diffusion prevention layer consisting of a metal oxide film or a silica film is formed before applying the low-melting glass paste. The metal diffusion prevention layer is formed by a thick film method or a plating method, but when using the thick film method, the metal diffusion prevention layer is formed before applying the low melting point glass paste. Burning the protective coating film
There is a need to. That is, when forming a dielectric layer on a glass substrate provided with electrodes, a total of two heat treatments are performed: one for firing the diffusion prevention coating film and one for burning out the low melting point glass paste.

[Problem to be solved by the invention]

However, conventionally, when applying a low melting point glass paste directly to the surface of a glass substrate to form a dielectric layer, when the low melting point glass paste is burnt out, the surface condition M of the glass substrate (stains, Due to the unevenness (M) such as steps and unevenness, the low melting point glass that uniformly covers the surface of the glass substrate becomes loose in a part of the substrate surface, and a perforation-shaped void is often created in the dielectric layer after firing. There was a problem.

When voids occur in the dielectric layer, not only does the display quality deteriorate, but in some cases, the electrodes exposed in the voids may oxidize and break during firing, resulting in defective products and lower yields. become.

In addition, when applying a low-melting glass paste through a metal diffusion prevention layer made of a silica film, a good dielectric layer without voids can be obtained. The heat treatment for forming the diffusion prevention layer and the heat treatment for burning the low melting point glass paste are performed separately, which poses a problem that the process is complicated and mass productivity is poor.

In view of the above-mentioned problems, it is an object of the present invention to prevent a decrease in display quality and a decrease in yield due to the generation of voids during the formation of a dielectric layer, while minimizing the decrease in mass productivity. .

[Means to solve the problem]

In order to solve the above-mentioned problem ii, the present invention, as shown in FIG.
The dielectric layer 5 made of a laminate of silicon dioxide and low melting glass that covers the electrode 3 is formed by coating the electrode 3 and simultaneously firing silicon and low melting glass in one heat treatment.
It is characterized by the formation of

[For production]

The surface of the substrate {on which the electrode 3 is provided is first covered with a silicon-containing solution 5a.

The low melting point glass paste 5b is a silicon-containing solution 5a.
It is applied on top of a layer consisting of.

By heat treatment in this state, silicon and low melting point glass are fired simultaneously. At this time, due to the presence of a silicon oxide, so-called silicon dioxide, which has an affinity for both the base material I and the low melting point glass, the low melting point glass is not affected by the surface condition of the substrate I. While the coating state is maintained well, the silicon dioxide and the low melting point glass are laminated and integrated to form the dielectric layer 5.
is expressed.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIGS. 1(a) to 1(d) are cross-sectional views showing each manufacturing step of a PDP 1l according to the present invention. In the figure, the same components as in FIG. 2 are given the same reference numerals.

First, a three-layer metal thin film (film thickness: 5,000 to 10,000 layers) consisting of, for example, chromium, copper, and chromium laminated in this order is formed on the surface of a glass substrate on the display side by sputtering. Next, the metal thin film is pattern etched using photolithography to form X electrodes 3.3...
・To give form to.

Next, using a spin coater or a spray coating device, a so-called warpage coating solution 5a containing silicon (Si) is applied and dried, and a silicon n-taper made of unfired silicon is coated on the surface of the glass substrate 1. 5a [Figure 1(b)
].

As the silica coating solution 5a, for example, the solution manufactured by Tokyo Ohka Kogyo Co., Ltd. f! i. (Product number Si-70
000-SG, silicon dioxide concentration 7.0%, 20°C
(viscosity at 1.35 cps and specific gravity at 20'C 0.93) can be used.

Next, a glass paste 5b made of low-melting glass powder mixed with a filler (adhesive) and an organic solvent is applied onto the silicon film 5a by screen printing, and the glass paste N5b is shaped [Fig. 1 (c) ) Ko .

After sequentially laminating the silicon film 5a and the glass paste layer 5b in this way, the glass substrate vil is heated to a temperature higher than the transition temperature of low melting point glass (570-55
After heating to 80"C) and maintaining that temperature for 60 to 90 minutes, it is naturally cooled to room temperature. Through this one-time heat treatment, the organic solvent etc. evaporate from the silicon film 5a and the glass paste layer 5b, and the silicon The silicon film 5a is oxidized by
becomes a silica coat made of silicon dioxide (Sin.), and this glue coat and glass paste layer 5b are integrated in a laminated state to form a vitrified dielectric layer 5 [Fig. 1(d)] ].

As described above, due to the presence of the silica coat (Sing) between the glass base layer 1 and the glass paste layer 5b, the heat treatment for forming the dielectric layer 5 can be performed regardless of the surface condition of the glass substrate 1. First, the state in which the glass substrate 1 is coated with the low melting point glass is maintained in a good condition. Furthermore, since the silicon film 5a and the glass paste layer 5b are heat-treated at the same time, only one heat treatment step is required, the manufacturing process is not complicated, and an increase in cost can be suppressed.

After this, the glass base F on which the protective layer 7 was applied
The i+ is overlaid with a glass substrate 2 on the back side on which a Y electrode 4, a current electrical body layer 6, and a protective layer 8 are separately provided, and is sealed with a sealing glass 9 and filled with a mixed gas for discharge. We will complete PDP II. [Effects of the Invention] According to the present invention, it is possible to prevent a decrease in display quality and a decrease in yield due to the generation of voids in the shape of a dielectric layer, while suppressing a decrease in mass productivity as much as possible.

[Brief explanation of drawings]

FIGS. 1(a) to 1(d) are partial sectional views showing each manufacturing step of the FDP according to the present invention, and FIG. 2 is a sectional view of essential parts showing the structure of the FDP. In the figure, 1 is a glass substrate (substrate), 3 is an X electrode (electrode), 5 is a dielectric layer, 5a is a silica coating solution (solution containing silicon), 5b is a glass paste (low melting point glass paste), 11
is a partial cross-sectional view showing each manufacturing step of FDP (plasma display) according to the present invention.

Claims (1)

[Claims] (1) After applying a silicon-containing solution (5a) to the surface of the substrate (1) on which the electrode (3) is provided, a low melting point glass paste (5b) is applied, and a single heat treatment removes silicon and low melting point glass paste (5b). A method for manufacturing a plasma display panel, characterized in that a dielectric layer (5) made of a laminate of silicon dioxide and low melting point glass that covers the electrode (3) is formed by simultaneously firing the melting point glasses.