JPH0367345B2 - - Google Patents
Info
- Publication number
- JPH0367345B2 JPH0367345B2 JP12891984A JP12891984A JPH0367345B2 JP H0367345 B2 JPH0367345 B2 JP H0367345B2 JP 12891984 A JP12891984 A JP 12891984A JP 12891984 A JP12891984 A JP 12891984A JP H0367345 B2 JPH0367345 B2 JP H0367345B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- seal ring
- group
- ring pattern
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Wire Bonding (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
【発明の詳細な説明】
[発明の技術分野]
本発明はマルチチツプパツケージにおいて、搭
載・実装されたチツプ部品とI/Oリードとの配
線を容易に変更し得るマルチチツプパツケージに
関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a multi-chip package in which wiring between mounted chip components and I/O leads can be easily changed.
[発明の技術的背景とその問題点]
電子機器の小型化、軽量化が進むにつれ、電子
部品の高密度実装化が一段と強く要請されるよう
になつてきている。[Technical background of the invention and its problems] As electronic devices become smaller and lighter, there is an increasing demand for high-density packaging of electronic components.
このような背景のもとで、ハイブリツドICは、
モノリシツクICでは実現が困難な大電力・高電
圧分野や、多品種少量生産あるいは多機能化に好
適するところから、その応用分野は急速に拡大し
てきている。 Against this background, hybrid ICs
Its application fields are rapidly expanding because it is suitable for high-power/high-voltage fields that are difficult to achieve with monolithic ICs, high-mix, low-volume production, and multifunctionality.
第2図はハイブリツドICの一例を斜視的に示
すもので、埋込配線1を多数埋設したセラミツク
多層基板2上に、埋込配線1に導通するボンデイ
ングパツド3a〜3f群が形成されている。しか
して、セラミツク多層基板2上に搭載配置した
ICチツプその他のチツプ部品4a〜4c群の端
子は、ボンド線5a〜5fを介して所定(対応す
る)のボンデイングパツド3a〜3f群にそれぞ
れ接続されている。 FIG. 2 is a perspective view of an example of a hybrid IC, in which a group of bonding pads 3a to 3f that are electrically connected to the embedded wiring 1 are formed on a ceramic multilayer substrate 2 in which a large number of embedded wiring 1 are buried. . Therefore, it was mounted and arranged on the ceramic multilayer substrate 2.
The terminals of the IC chips and other chip components 4a to 4c are respectively connected to predetermined (corresponding) bonding pads 3a to 3f via bond lines 5a to 5f.
このようなハイブリツドICは、客先ニーズに
応じて開発設計され、試作品を評価して必要な修
正を行ない、所期の機能が発揮されることを確認
した後、製品生産に入るのが一般的であるが、最
近では開発設計から生産までの時間的余裕が少な
いことが多いため、特に少量製品では、試作品の
試作評価と製品の生産とを平行して進行させる必
要を生ずる場合が少なくない。 Hybrid ICs like this are developed and designed according to customer needs, and after evaluating the prototype and making any necessary modifications to confirm that the desired functionality is achieved, production begins. However, these days, there is often less time available from development design to production, so it is rarely necessary to proceed with prototype evaluation and product production in parallel, especially for small-volume products. do not have.
このような場合、ICチツプ4a〜4c間、あ
るいはICチツプと入出力回路間の埋込配線1を
追加、削除する必要が生じた際には、従来はセラ
ミツク多層基板2自体を作り直していたが、これ
に要する工数と時間およびパターンマスクや金型
等の開発説経費を節減するため、第3図に示すハ
イブリツドICの変更方法が考えられている。 In such a case, when it became necessary to add or delete the embedded wiring 1 between the IC chips 4a to 4c or between the IC chip and the input/output circuit, conventionally the ceramic multilayer board 2 itself was remade. In order to reduce the man-hours and time required for this, as well as development costs for pattern masks, molds, etc., a method of modifying the hybrid IC shown in FIG. 3 has been considered.
即ち、第2図の構成のハイブリツドICを評価
した結果、例えば、ICチツプ4aと埋込配線1
との導通を解き、代りにICチツプ4aと4bの
端子間を導通させる必要があることが判明した場
合には、第3図に示すように、セラミツク多層基
板2上の配線替えを行なうICチツプ4aの端子
近傍位置に追加パツド6を取付け、ボンド線5b
の一端をボンデイングバツド3bから取外して追
加パツド6上に接続した後、追加パツド6とボン
デイングパツド3dの間に追加配線7を配線す
る。 That is, as a result of evaluating the hybrid IC having the configuration shown in FIG.
If it is found that it is necessary to break the continuity between the IC chips 4a and 4b and instead establish continuity between the terminals of the IC chips 4a and 4b, as shown in FIG. Attach the additional pad 6 to the position near the terminal 4a, and connect the bond wire 5b.
After removing one end from the bonding pad 3b and connecting it onto the additional pad 6, an additional wiring 7 is wired between the additional pad 6 and the bonding pad 3d.
このようにすれば、原設計のセラミツク多層基
板を用いながら、ICチツプ間の接続を容易に変
更することができ、セラミツク多層基板やそれに
取付けたICチツプをそのまま利用することがで
きるので、ロスや時間を大幅に減少させることが
可能となる。 In this way, it is possible to easily change the connections between IC chips while using the originally designed ceramic multilayer board, and the ceramic multilayer board and the IC chips attached to it can be used as they are, reducing losses. It becomes possible to significantly reduce the time.
また、ボンド線と追加配線の接続は追加パツド
を中継して行なわれるので、ボンデイングは確実
に行なわれ、信頼性が低下することはない。 Further, since the bond line and the additional wiring are connected via the additional pad, bonding is performed reliably and reliability does not deteriorate.
しかしながら、上述したハイブリツドICの変
更方法には次のような問題がある。 However, the method of changing the hybrid IC described above has the following problems.
即ち、埋込配線が例えばCPUモジユールのア
ドレスバスやデータバスのように多数の箇所に接
続される配線である場合に、上述の方法で接続替
えを行なおうとすると、変更箇所が非常に多くな
つてしまい、作業が繁雑になつてしまう。 In other words, if the embedded wiring is a wiring that is connected to many locations, such as the address bus or data bus of a CPU module, and you try to change the connections using the method described above, you will have to change a large number of locations. This makes the work complicated.
またマルチチツプパツケージにおいては、通
常、セラミツク多層基板上に金属キヤツプを固着
してチツプ部品領域を内装した形で気密に封止す
るが、この金属キヤツプの取付け用として基板上
にシールリングパターンが設けられているため、
前記シールリングパターンの外側に存在している
I/Oリード取り付け用I/Oパツドと、内側に
存在しているボンデイングパツドなどの導体パツ
ド間に、上記追加配線を設けることは困難であ
る。 In addition, in multi-chip packages, normally a metal cap is fixed onto a ceramic multilayer board to seal the chip component area internally and hermetically, but a seal ring pattern is provided on the board for mounting this metal cap. Because it is
It is difficult to provide the additional wiring between the I/O pad for attaching an I/O lead that exists outside the seal ring pattern and the conductor pad such as a bonding pad that exists inside.
さらに、追加配線を設け得る基板面の広さが制
約されるため、追加配線にもい限界があり、搭載
するチツプ部品数が増加した場合は事実上対応し
得ないのが実情である。 Furthermore, since the area of the board surface on which additional wiring can be provided is limited, there is also a limit to the amount of additional wiring, and the reality is that it is virtually impossible to cope with an increase in the number of chip components to be mounted.
[発明の目的]
本発明は背景技術における上述の如き問題点を
解決すべくなされたもので、ハイブリツドICの
配線変更を更に容易に行なえるようにしたマルチ
チツプパツケージを提供することを目的とするも
のである。[Object of the Invention] The present invention was made to solve the above-mentioned problems in the background art, and an object of the present invention is to provide a multi-chip package that makes it easier to change the wiring of a hybrid IC. It is something.
[発明の概要]
本発明のマルチチツプパツケージは、埋込配線
を配設した基板と、前記基板上に搭載された複数
個のチツプ部品と、前記各チツプ部品近傍の基板
面に形設された上記埋込配線に導通する第1のボ
ンデイングパツド群と、前記第1のボンデイング
パツド群およびチツプ部品群を囲んで基板面に形
設されたシールリングパターンと、前記チツプ部
品およびこれに対応する第1のボンデイングパツ
ド間を連結するボンド線と、前記シールリングパ
ターン上に開口端面が封着されたキヤツプとを具
備して成るマルチチツプパツケージにおいて、
前記埋込配線はシールリングパターンの内側位
置でかつ、シーリングパターンの近傍に第1のボ
ンデイングパツド群との間に非導通部を形成し、
この非導通部の両側において基板上にそれぞれ形
設された第2のボンデイングパツド群にそれぞれ
に連結し、第2のボンデイングパツド間が電気的
に接続された構成を成していることを特徴とす
る。[Summary of the Invention] The multi-chip package of the present invention includes a substrate on which embedded wiring is arranged, a plurality of chip components mounted on the substrate, and a multi-chip package formed on the substrate surface near each of the chip components. A first bonding pad group electrically connected to the embedded wiring, a seal ring pattern formed on the board surface surrounding the first bonding pad group and the chip component group, the chip component and the corresponding chip component. In the multi-chip package, the multi-chip package includes a bond line connecting between first bonding pads, and a cap having an open end surface sealed on the seal ring pattern, wherein the embedded wiring is inside the seal ring pattern. forming a non-conducting portion between the bonding pad group and the first bonding pad group at the position and near the sealing pattern;
The non-conducting portion is connected to a second group of bonding pads formed on the substrate on both sides, and the second bonding pads are electrically connected to each other. Features.
[発明の実施例]
次に、第1図aおよびbを参照して本発明の実
施例を説明する。[Embodiments of the Invention] Next, embodiments of the present invention will be described with reference to FIGS. 1a and 1b.
第1図aは本発明に係るマルチチツプパツケー
ジの要部構成例を断面的に、また第1図bは同じ
く本発明に係るマルチチツプパツケージの要部構
成例においてキヤツプ封止前の状態を示す平面図
である。 FIG. 1a shows a cross-sectional view of an example of the main part of a multi-chip package according to the present invention, and FIG. 1b shows a state before the cap is sealed in an example of the main part of a multi-chip package according to the present invention. FIG.
同図において、セラミツク多層基板10内には
多数の埋込配線11(Do0〜Do7、So1〜So3な
ど)が埋設されている。この埋込配線11(Do0
〜Do7、So1〜So3など)には、その用途に応じて
多くの種類があるが、これがデータバスであると
すると、その一端は基板の周縁部に設けたI/O
パツド12を介してI/Oリード13に連結され
ている。14はI/Oパツド12とI/Oリード
13を接続する銀ろう層を示す。 In the figure, a large number of embedded wirings 11 (Do 0 to Do 7 , So 1 to So 3, etc.) are embedded in a ceramic multilayer substrate 10 . This embedded wiring 11 (Do 0
~Do 7 , So 1 ~ So 3 , etc.) There are many types depending on the application, but if this is a data bus, one end is an I/O bus installed on the periphery of the board.
It is connected to an I/O lead 13 via a pad 12. Reference numeral 14 indicates a silver solder layer connecting the I/O pad 12 and the I/O lead 13.
セラミツク多層基板10の表面上に設けた接地
または電源電位のダイパツド15上には、ハンダ
または導電性接着剤16を介してICチツプその
他のチツプ部品17が固着されている。また、基
板10上にはその周縁部よりやや内側にシールリ
ングパターン18が枠状に形成されており、金属
キヤツプ19の下端はハンダ層20によりシール
リングパターン18に気密に接続されている。 An IC chip or other chip components 17 are fixed onto a die pad 15 at ground or power supply potential provided on the surface of the ceramic multilayer substrate 10 via solder or conductive adhesive 16. Further, a frame-shaped seal ring pattern 18 is formed on the substrate 10 slightly inside the peripheral edge thereof, and the lower end of the metal cap 19 is hermetically connected to the seal ring pattern 18 by a solder layer 20.
前記埋込配線11(Do0〜Do7、So1〜So3な
ど)は、シールリングパターン18よりやや内側
位置でかつ、後述する第1のボンデイングパツド
群23との間にて分断されて非導通部21を形成
している。この非導通部の両側におけるI/Oリ
ード13側配線11aと、チツプ部品17側配線
11bはそれぞれ基板10上に配設した第2のボ
ンデイングパツド22a,22b群に接続されて
入る。また、配線11bは適所に配置した第1の
ボンデイングパツド23群に接続されている。 The embedded wiring 11 (Do 0 to Do 7 , So 1 to So 3, etc.) is located slightly inside the seal ring pattern 18 and is separated from a first bonding pad group 23 to be described later. A non-conducting portion 21 is formed. The wiring 11a on the I/O lead 13 side and the wiring 11b on the chip component 17 side on both sides of this non-conducting part are connected to a second group of bonding pads 22a and 22b arranged on the substrate 10, respectively. Further, the wiring 11b is connected to a first group of bonding pads 23 placed at appropriate locations.
この第1のボンデイングパツド23群とチツプ
部品17の端子の間、および第2のボンデイング
パツド22aと22b群の間はそれぞれボンド線
24,25でボンデイングされている。しかし
て、前記第2ボンデイングパツド22a,22b
群間は、機能評価テストで誤配線などが確認され
た場合、適宜切離し接続し代え得るようになつて
いる。つまり、チツプ部品17側配線11bを
I/Oリード13とは異なるI/Oリードに接続
することが適当と判断されたような場合には、ボ
ンデイングパツド22a,22b間のボンド線2
4を取外し、他のI/Oリードに連なるボンデイ
ングパツドとボンデイングパツド22bとの間を
ボンド線または追加配線で接続すればよい。 Bonding is performed between the first group of bonding pads 23 and the terminals of the chip component 17, and between the second group of bonding pads 22a and 22b using bond lines 24 and 25, respectively. Therefore, the second bonding pads 22a, 22b
Groups can be disconnected and reconnected as appropriate if wiring errors are confirmed during a functional evaluation test. In other words, if it is determined that it is appropriate to connect the wiring 11b on the chip component 17 side to an I/O lead different from the I/O lead 13, the bond line 2 between the bonding pads 22a and 22b
4 and connect the bonding pad connected to another I/O lead and the bonding pad 22b with a bond wire or additional wiring.
この点において、、第1図bを参照してさらに
詳述すると、たとえばデータバスDo0〜Do7にお
いて、Do0とDO1の配線を入れ代える必要がある
場合、前記第2のボンデイングパツド22a,2
2b間のボンデイングワイヤ24を外したとえば
クロスさせた形でボンデイングすることによつ
て、配線を入れ代えを達成し得る。 In this regard, to explain in more detail with reference to FIG . 22a,2
Interchanging the wiring can be achieved by removing the bonding wires 24 between the wires 2b and bonding them in a crossed manner, for example.
一方、通常の信号機So1〜So3において、たと
えばSo1が電源もしくはグランドベタパターン2
6とシヨート(短絡)している場合、シヨート箇
所の見つけだしが困難で、仮に見つけだしたとし
ても、その領域面上にチツプ部品17用のダイパ
ツド15があると切り開くことができないため、
実質的にシヨート箇所の修理は不可能なのが実情
である。しかも、前記チツプ部品17用のダイパ
ツド15が占める部分は、比較的広いのでこうし
た問題の起る確率も高い。さらに、前記So1をグ
ランドベタパターン26から切り離す必要がある
とき、前記第2のボンデイングパツド22a,2
2b間のボンデイングワイヤ24を切り離すこと
によつて容易に対応し得る。なお、ハイブリツド
IC用の多層配線基板は、シールド効果および耐
誘導ノイズ性などの向上を図るため、グランドパ
ターンおよび電源のベタ層26を含む多層構造を
採つている場合が多く、シーリング内側になる
程、層間シヨートの発生確率も高い。 On the other hand, in normal traffic lights So 1 to So 3 , for example, So 1 is the power supply or ground solid pattern 2.
6, it is difficult to find the shot point, and even if it were found, it would not be possible to cut it out if there is a die pad 15 for the chip component 17 on the surface of that area.
The reality is that it is virtually impossible to repair the shortened part. Moreover, since the area occupied by the die pad 15 for the chip component 17 is relatively wide, the probability of such a problem occurring is high. Furthermore, when it is necessary to separate the So 1 from the ground solid pattern 26, the second bonding pads 22a, 2
This can be easily handled by cutting off the bonding wire 24 between the wires 2b. In addition, hybrid
Multilayer wiring boards for ICs often have a multilayer structure that includes a ground pattern and a solid layer 26 for the power supply in order to improve the shielding effect and resistance to induced noise. The probability of occurrence is also high.
[発明の効果]
上述の如く本発明のマルチチツプパツケージで
は基板内に埋込配線されたパターン配線の途中を
分断し、この分断点の両側の埋込配線端部にそれ
ぞれボンデイングパツドを設けたものであるか
ら、これらのボンデイングパツド間を接続替えす
ることにより、チツプ部品側配線に連なる回路素
子を一括して接続替えすることができる。[Effects of the Invention] As described above, in the multi-chip package of the present invention, the pattern wiring embedded in the substrate is separated in the middle, and bonding pads are provided at the ends of the embedded wiring on both sides of this separation point. Therefore, by changing the connections between these bonding pads, the connections of the circuit elements connected to the wiring on the chip component side can be changed all at once.
また、分断点接続用のボンデイングパツド22
a,22bはシールリングパターン18の内側近
傍に設けられているので、ボンド線や追加配線を
シールリングパターンをまたいで配設する必要が
なく、金属キヤツプ内の気密性を低下させるよう
なことはない。 Also, a bonding pad 22 for connecting the breaking point.
Since a and 22b are provided near the inside of the seal ring pattern 18, there is no need to arrange bond wires or additional wiring across the seal ring pattern, and there is no need to lower the airtightness inside the metal cap. do not have.
第1図aは本発明に係るマルチチツプパツケー
ジの要部構成例の断面図、第1図bは同じく本発
明に係るマルチチツプパツケージの要部構成例に
おいてキヤツプ封止前の状態を示す平面図、第2
図および第3図は従来のマルチチツプパツケージ
の要部構成を示す斜視図である。
1,11……埋込配線、2,10……セラミツ
ク多層基板、3a〜3f,22a,22b,23
……ボンデイングパツド、4a〜4c,17……
チツプ部品、5a〜5f,24,25……ボンド
線、6……追加パツド、7……追加配線、12…
…I/Oパツド、13……I/Oリード、15…
…ダイパツド、18……シールリングパターン、
19……金属キヤツプ、21……非導通部。
FIG. 1a is a cross-sectional view of an example of the configuration of a main part of a multi-chip package according to the present invention, and FIG. , second
3 and 3 are perspective views showing the main structure of a conventional multi-chip package. 1, 11... Embedded wiring, 2, 10... Ceramic multilayer substrate, 3a to 3f, 22a, 22b, 23
...Bonding pad, 4a-4c, 17...
Chip parts, 5a to 5f, 24, 25... Bond wire, 6... Additional pad, 7... Additional wiring, 12...
...I/O pad, 13...I/O lead, 15...
...Die pad, 18...Seal ring pattern,
19...Metal cap, 21...Non-conducting part.
Claims (1)
載された複数個のチツプ部品と、前記各チツプ部
品近傍の基板面に形設され上記埋込配線に導通す
る第1のボンデイングパツド群と、前記第1のボ
ンデイングパツド群およびチツプ部品群を囲んで
基板面に形設されたシールリングパターンと、前
記チツプ部品およびこれに対応する第1のボンデ
イングパツド間を連結するボンド線と、前記シー
ルリングパターン上に開口端面がを封着されたキ
ヤツプと、前記キヤツプの外周辺に形設された
I/Oリードとを具備して成るマルチチツプパツ
ケージにおいて、 前記埋込配線はシールリングパターンの内側位
置でかつ、シールリングパターン近傍の表面に導
出された第1のボンデイングパツド群との間に非
導通部を形成し、この非導通部の両側において基
板上にそれぞれ形設された第2のボンデイングパ
ツド群にそれぞれに連結し、第2のボンデイング
パツド間が電気的に接続された構成を成している
ことを特徴とするマルチチツプパツケージ。[Scope of Claims] 1. A substrate on which embedded wiring is arranged, a plurality of chip components mounted on the substrate, and a substrate formed on the substrate surface near each of the chip components and electrically connected to the embedded wiring. a first bonding pad group, a seal ring pattern formed on the substrate surface surrounding the first bonding pad group and the chip component group, and a seal ring pattern formed on the substrate surface surrounding the first bonding pad group and the chip component group; A multi-chip package comprising: a bond line connecting the chips; a cap having an open end surface sealed on the seal ring pattern; and an I/O lead formed around the outer periphery of the cap. The embedded wiring forms a non-conducting part between the first bonding pad group and the first group of bonding pads led out on the surface near the seal ring pattern at an inside position of the seal ring pattern. A multi-chip package characterized in that the chip is connected to a group of second bonding pads respectively formed on the chip, and has a configuration in which the second bonding pads are electrically connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12891984A JPS617657A (en) | 1984-06-22 | 1984-06-22 | Package for multi-chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12891984A JPS617657A (en) | 1984-06-22 | 1984-06-22 | Package for multi-chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS617657A JPS617657A (en) | 1986-01-14 |
| JPH0367345B2 true JPH0367345B2 (en) | 1991-10-22 |
Family
ID=14996614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12891984A Granted JPS617657A (en) | 1984-06-22 | 1984-06-22 | Package for multi-chip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS617657A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62179135A (en) * | 1986-01-31 | 1987-08-06 | Mitsubishi Electric Corp | microwave equipment module |
| JPH03211757A (en) * | 1989-12-21 | 1991-09-17 | General Electric Co <Ge> | Hermetically sealed object |
| JP2772739B2 (en) * | 1991-06-20 | 1998-07-09 | いわき電子株式会社 | External electrode structure of leadless package and method of manufacturing the same |
| US5155577A (en) * | 1991-01-07 | 1992-10-13 | International Business Machines Corporation | Integrated circuit carriers and a method for making engineering changes in said carriers |
| EP0547807A3 (en) * | 1991-12-16 | 1993-09-22 | General Electric Company | Packaged electronic system |
-
1984
- 1984-06-22 JP JP12891984A patent/JPS617657A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS617657A (en) | 1986-01-14 |
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|---|---|---|---|
| EXPY | Cancellation because of completion of term |