JPH1012904A - Method for manufacturing thin film semiconductor device - Google Patents

Abstract

(57) Abstract: In a method of manufacturing a thin film semiconductor device, in which a thin film semiconductor device including a plurality of thin film semiconductor elements is formed simultaneously on an insulating substrate using a mask, the method can be applied to a resin substrate.
Provided is a method for manufacturing a thin film semiconductor device capable of forming a precise pattern with high precision. A mask film (2) having the same or similar thermal deformation rate as an insulating substrate (1) is thermocompression-bonded on a thin film forming surface of the insulating substrate (1) to form a thin film semiconductor layer (20) and an electrode layer (1).
After laminating 0 and 30, the mask film 2 is placed on the insulating substrate 1
By separating the thin film semiconductor layer 20 and the electrode layers 10 and 30 on the insulating substrate 1 from each other, a thin film semiconductor device including a plurality of thin film semiconductor elements is obtained. To form

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film semiconductor device comprising a plurality of thin film semiconductor elements formed on an insulating substrate such as a thin film solar cell.

[0002]

2. Description of the Related Art As one of thin-film semiconductor devices formed on a substrate having an insulating surface, there is a thin-film solar cell. A thin-film solar cell has a structure in which a first electrode layer, a thin-film semiconductor layer serving as a photoelectric conversion layer, and a second electrode layer are laminated on an insulating substrate, and in particular, a loss due to a voltage drop in the second electrode layer is reduced. In order to avoid this, a structure is often adopted in which the unit cell is divided into a plurality of unit cells, and the divided unit cells are electrically connected in series with adjacent unit cells. In order to divide into a plurality of unit cells and form a series connection structure, at the time of forming each electrode layer and the thin film semiconductor layer, it is necessary to selectively form using a mask or to form the entire surface and then separate it by laser processing. A method is used.

[0003]

Conventionally, a thin metal plate mask has been used as a mask for selective formation. However, when a resin substrate such as polyimide is used, heat shrinkage occurs during the formation of a thin film semiconductor layer. This caused the mask to shift or the mask to be unable to adhere to the substrate, resulting in mask blurring. Also,
In the lift-off method using a film such as a photoresist which is easily peeled as a mask, the mask is not blurred, but there is a problem that the mask film is peeled off due to the thermal shrinkage of the substrate. Particularly, in a so-called roll-to-roll type film forming method in which a solar cell is continuously formed while a long substrate wound around a roll is sent out and wound around a roll,
There were also problems such as the peeling of the mask film during roll winding.

In a method in which a thin film semiconductor layer and an electrode layer are formed on the entire surface and then separated by laser processing, a transparent substrate is used, and in the case of a thin film solar cell having an electrode layer and a thin film semiconductor layer formed on both surfaces thereof, a laser is used. There is a problem that light passes through the substrate and damages the thin film layer on the back surface. In view of the above problems, an object of the present invention is to provide a method of manufacturing a thin film semiconductor device that can cope with a resin substrate and can form a highly precise pattern.

[0005]

In order to solve the above-mentioned problems, the present invention uses, as a mask, a film having substantially the same thermal deformation as an insulating substrate. That is, in a method of manufacturing a thin-film semiconductor device including a plurality of thin-film semiconductor elements on an insulating substrate at the same time using a mask, a mask film having substantially the same thermal deformation rate as the insulating substrate, After fixing the mask film of the same material on the thin film forming surface of the insulating substrate, laminating the thin film semiconductor layer and the electrode layer, by peeling the mask film from the insulating substrate, the thin film semiconductor layer on the laminated insulating substrate and The electrode layers are separated from each other to form a thin film semiconductor device including a plurality of thin film semiconductor elements.

[0006] In this case, peeling of the mask film and floating of the mask due to the difference in thermal deformability between the insulating substrate and the mask film are suppressed. A mask film of the same pattern as a thin film semiconductor element having almost the same thermal deformation rate as the insulating substrate is fixed on the thin film forming surface of the insulating substrate, and a thin film having a weak adhesive force with the insulating substrate is formed on the insulating substrate including the mask film. After the mask film is peeled off from the insulating substrate, a thin film mask having low adhesive strength with the insulating substrate is formed, and the thin film semiconductor layer and the electrode layer are laminated. By peeling the weak thin film mask from the insulating substrate, the thin film semiconductor layer and the electrode layer on the laminated insulating substrate are separated from each other, so that a thin film semiconductor device including a plurality of thin film semiconductor elements may be obtained.

In particular, an insulating substrate having a light-transmitting property, a plurality of thin-film semiconductor elements formed on a front surface of the insulating substrate, and a plurality of electrode layers electrically connected to the thin-film semiconductor elements formed on a back surface. May be. By doing so, it is not necessary to use laser processing, which has been a problem with a light-transmitting insulating substrate.

Further, the mask film is made of an adhesive resin film, and the mask film is fixed to the substrate by applying a pressure between the mask film and the substrate at a temperature higher than the forming temperature of the thin film semiconductor layer. I do. Alternatively, an adhesive resin may be applied on an insulating substrate by using a screen printing method or an inkjet printing method, and may be baked to fix the mask film to the substrate.

In this case, stable fixation can be performed even when the thin film semiconductor layer is formed. Alternatively, the mask film may be fixed to the substrate by roughening the surface of the insulating substrate, bringing the mask film made of an adhesive resin film into close contact with the insulating substrate, and applying a high voltage. By doing so, the adhesive strength between the mask film and the insulating substrate can be increased.

The corners of the opening of the mask film are curved. By doing so, stress concentration at corners is suppressed. Further, the area of the mask film is larger on the substrate side than on the film attachment side. By doing so, there is little influence on the formation of the electrode layer and the thin film semiconductor layer near the mask film.

As a method of removing the mask film, it is preferable to remove the mask film using a roll having an adhesive surface. By doing so, the film is uniformly peeled off with a uniform force. An insulating substrate wound on a roll is continuously fed out, and after forming a thin film semiconductor device, a roll-to-roll method of winding on a take-up roll, or an insulating substrate wound on a roll is sent out intermittently, thereby forming a thin film semiconductor device. After forming the film, the process is performed by a stepping roll method in which the film is wound around a winding roll.

[0012] In this case, the work can be performed continuously, and the connection with the pre-process and the post-process is easy.

[0013]

Embodiments of the present invention will be described below with reference to the accompanying drawings. In the method for manufacturing a thin film semiconductor device according to the present invention, a mask film having a thermal deformation rate equivalent to that of an insulating substrate is used, and the mask film and the substrate are pressed at a high temperature to fix the mask film. After laminating the first electrode layer, the thin film semiconductor layer, and the second electrode layer on the insulating substrate including the mask film, the mask film is peeled off from the insulating substrate to form the electrode layer on the mask film, the thin film semiconductor layer. At the same time, they are removed to form a thin film semiconductor device having a predetermined pattern. Example 1 FIG. 2A is a plan view of a thin-film solar cell obtained by the present invention, and FIG. 2B is a cross-sectional view taken along the line AA ′ of FIG. 2A.

In FIG. 2B, reference numerals 51, 52, and 53 denote separated solar cell unit cells. Each cell has a first electrode layer 1 deposited on a polyimide resin substrate 1.
0, a thin film semiconductor layer 20, and a second electrode layer 30. The first electrode layer 10 is 0.2 μm thick silver (Ag) sputter deposited. The thin film semiconductor layer 20 is formed by plasma CVD.
This is an amorphous silicon film having a thickness of about 1 μm deposited by the method. The second electrode layer 30 has a thickness of 0.
1 μm indium oxide (In ₂ O ₃ ).

The thin-film semiconductor layer 20 is deposited in the range B in FIG. 1, and reference numeral 11 denotes a missing portion of the first electrode layer 10. In the range surrounded by the dotted line in the figure, the second electrode 30 is connected to the underlying first electrode layer 10, and three unit cells 51, 52, and 53 are connected in series. FIGS. 1A to 1D are cross-sectional views of main steps in a manufacturing process order for explaining a manufacturing method of the present invention.

Hereinafter, the manufacturing method of the present invention will be described with reference to FIG. A polyimide film having a thickness of 50 μm is used as the insulating substrate 1 (FIG. 1A). A mask film 2 on which a predetermined pattern made of a polyimide resin having a thickness of 1 μm is formed is pressed on the insulating substrate 1 at a high temperature of 300 ° C. [FIG. Next, on the resin substrate 1 on which the mask film 2 is fixed, silver is 0.2 μm in thickness as the first electrode layer 10 by a sputtering method, and an amorphous silicon film to be a photoelectric conversion layer as a thin film semiconductor layer 20 by a plasma CVD method. Is formed to a thickness of 1 μm, and an indium oxide film is formed to a thickness of 0.1 μm by sputtering as the second electrode layer 30 [FIG.

Thereafter, the mask film 2 is placed on the insulating substrate 1.
The electrode layer and the thin film semiconductor layer on the mask film 2 are simultaneously removed by peeling off the first electrode layer 1.
0, the amorphous semiconductor layer 20, and the second electrode layer 30 are divided into three unit cells 51, 52, and 53. Then, a structure in which the unit cells 51, 52, and 53 are connected in series in a cross section (not shown) is obtained [FIG.

FIG. 7A is an elevation view of an apparatus for forming a mask film 2 on an insulating substrate 1, and FIG. 7B is a perspective plan view seen from above. The polyimide insulating substrate 1 is roll-to-roll conveyed by a feed roll 4 and a take-up roll 5. The insulating substrate 1 is provided with a positioning hole 6 for conveyance. The positioning sensor 7 recognizes the positioning hole 6 and can stop the conveyance.

The insulating substrate 1 and the mask film 2 are heated and pressed by sandwiching the insulating substrate 1 and the mask film 2 from above and below with a release sheet 8 and moving the upper and lower heater plates 9. The release sheet 8 is, for example, a glass cloth impregnated with a tetrafluoroethylene resin. By separating the upper and lower heater plates 9 and removing the release sheet 8, the insulating substrate 1 on which the mask film 2 is fixed can be obtained. This is taken up on a take-up roll 5. The mask film 2 is supplied from a mask film roll 14 as shown. Alternatively, it may be supplied in a batch system from a direction perpendicular to the paper surface.

According to this mask film forming method, since a mask film can be formed over a large area at a time, there is an advantage that the accuracy of forming a mask in a substrate is high. As a method of removing the mask film, the mask film is removed by a roll having an adhesive surface. If it does so, it will peel off uniformly with a uniform force. FIG. 8A is a view of a mask film 2 formed on an insulating substrate, and FIG. 8B is a cross-sectional view of a part of the mask. As shown in the figure, the side in contact with the substrate is wide, and the side on which the thin film adheres is narrow. This is to prevent the film thickness near the mask film 2 from becoming thin during the formation of the thin film semiconductor layer and the electrode layer. When the mask film 2 is thicker than the thin film semiconductor layer and the electrode layer formed by the mask film 2, the shape of the mask film 2 must be made larger on the side in contact with the substrate. The thickness may be different, which may cause a defect.

FIG. 8C is an enlarged view of a corner of the mask film 2. The corner of the opening has an arc shape with a radius of 0.3 mm. This is to prevent the mask from being easily torn due to stress concentration when manufacturing or removing the mask if the corner of the opening is at a right angle. In this embodiment,
Since the polyimide resin is used for both the insulating substrate 1 and the mask film 2, the degree of heat shrinkage during heating is the same, although the degree of heat shrinkage is the same, and the mask film 2 for lift-off is peeled off due to thermal deformation of the insulating substrate 1. And the mask blur is gone. Further, the mask width can be reduced to about 100 μm.

As described above, it is possible to manufacture a series-connected solar cell with high area efficiency and few defects on a heat-resistant resin substrate which undergoes large thermal deformation due to high temperature during thin film formation. FIG. 6 shows an apparatus for winding the insulating substrate 1 on which the mask film 2 has been pressed to the take-up roll 5. However, the apparatus is not directly wound up, but is directly sent to a film forming apparatus to form an electrode layer and a thin-film semiconductor layer. Can also. Example 2 As a device for increasing the adhesive strength between the insulating substrate 1 and the mask film 2, a method of making the surface of the substrate 1 and the surface of the mask film uneven may be considered. As an example of a method for making the surface uneven, a plasma treatment method is used.

FIG. 9 is an enlarged sectional view of the bonding surface when the surface is roughened by irradiating with nitrogen plasma. This method is particularly effective when polyether naphthalate (PEN) or polyethylene terephthalate (PET), which cannot be used at a high temperature of 200 ° C. or higher, is used as the insulating substrate 1 and the mask film 2. Embodiment 3 FIG. 3A is a plan view of a thin-film solar cell according to another embodiment to which the manufacturing method of the present invention is applied, and FIG.
It is a top view on the back side of an insulating substrate.

In this example, a through-hole is formed in the insulating substrate, and the first and second electrode layers on both sides of the photoelectric conversion layer are connected to the third electrode layer on the back surface of the substrate by using the through-hole, and are connected in series. It constitutes the structure. Reference numeral 10 denotes a first electrode layer of silver (Ag) having a thickness of 0.2 μm sputter-deposited on a translucent aramid film substrate 1 having a thickness of 50 μm, and reference numeral 20 denotes a first electrode layer having a thickness of about 1 μm deposited by a plasma CVD method. The thin-film semiconductor layer 30 of the amorphous silicon film is a second electrode layer 30 of indium oxide (In ₂ O ₃ ) having a thickness of 0.1 μm sputter-deposited. 61 to 66 are first through holes for connecting the first electrode 10 and a third electrode layer formed on the back surface of the substrate, and 71 to 76 are for connecting the second electrode 30 and the third electrode layer. This is a second through hole for forming Each cell 54-5
6 are completely separated on the substrate.

As shown in FIG. 3B, the third electrode 40 on the back surface of the insulating substrate 1 is also separated. However, the position of the separator 13 is determined by the unit cells 54 to 56 on the upper surface of the substrate.
Are separated from the position of the separation band 12. FIG. 4A is a cross-sectional view taken along line CC ′ of FIG. 3A, and FIG. 4B is a cross-sectional view taken along line DD ′ of FIG. 3A.

As shown in FIG. 4A, the third electrode layer 4
Numeral 0 is a two-layer structure of the third electrode inner layer 40a and the third electrode outer layer 40b. In the second through holes 71 to 73 (not shown, the same applies to 74 to 76), the second electrode layer 30 and the third electrode It is connected to the outer layer 40b, and the potential of the second electrode layer 30 is brought to the third electrode layer 40 on the back surface of the insulating substrate 1. The positional relationship between the separation band 12 such as an electrode layer on the insulating substrate and the lower separation band 13 can be seen.

On the other hand, as shown in FIG. 4B, the first through holes 61 to 63 (not shown, but the same applies to 64 to 66).
Inside, the first electrode layer 10 and the third electrode inner layer 40 a are connected, and the potential of the first electrode layer 10 is also brought to the third electrode layer 40 on the back surface of the insulating substrate 1. As shown in FIG. 3A, the thin film semiconductor layer 20 and the second electrode layer 30 are not formed in a portion where the first through holes 61 to 66 exist, so that the second electrode layer is formed through the hole. And the third electrode layer are not short-circuited.

FIGS. 4A and 4B show the unit cell 5
4, 55 and 56 are connected in series, and it can be seen that a series output is output between the leftmost third electrode layer 41 and the rightmost third electrode layer 42 in the drawing of the lower surface of the insulating substrate 1. FIG. 5 (a)
FIGS. 5A to 5E are cross-sectional views of main steps in a manufacturing process order for explaining a method of manufacturing the thin-film semiconductor device of Example 3. FIGS. However, FIG. 3A is a cross-sectional view along the line CC ′ in FIG.

Hereinafter, the manufacturing method of the present invention will be described with reference to FIG. An aramid film having a thickness of 50 μm is pressure-bonded to both surfaces of an insulating substrate 1 at a high temperature of 300 ° C. with a mask film 2 made of a polyimide resin having a thickness of 1 μm [FIG. After forming a first through-hole, which does not appear in the cross section of the figure by a punch, silver is vapor-deposited at a thickness of 0.2 μm on the insulating substrate 1 on which mask films 2 are fixed on both sides by a sputtering method. I do. In addition, silver is vapor-deposited at a thickness of 0.2 μm on the back surface of the insulating substrate 1 to form a third electrode inner layer 40a [FIG. At this time, a silver film is also formed on the mask film 2. The first electrode layer 10 and the third electrode inner layer 40a are also formed on the inner surface of the first through hole, and are electrically connected inside the first through hole.

Next, the second through holes 7 are formed in the insulating substrate 1 by punching.
1 to 76 are opened [FIG. An amorphous silicon film is deposited to a thickness of 1 μm by a plasma CVD method to form a thin film semiconductor layer 20 serving as a photoelectric conversion layer. Subsequently, an indium oxide film having a thickness of 0.1 μm is formed as the second electrode layer 30 by a sputtering method. Further, silver is deposited on the rear surface of the substrate by sputtering to a thickness of 0.1 μm to form a third electrode outer layer 40b (FIG. 3C). At this time, the second through holes 71, 72,
Inside 73, the second electrode layer 30 and the third electrode outer layer 40b are connected. Further, the amorphous silicon film, the indium oxide film, and the silver film are also formed on the mask film 2.

Thereafter, the mask film 2 on both sides is peeled off from the insulating substrate 1 to remove the thin film on the mask film 2 at the same time, thereby forming a separation band 12 on the upper surface of the insulating substrate 1 and the first electrode layer. 10, the amorphous semiconductor layer 20, and the second electrode layer 30 include three unit cells 54,
It is divided into 55 and 56. At the same time, a separation zone 13 is formed on the lower surface of the insulating substrate 1, and the unit cells 54, 72 are formed by the action of the second through holes 71, 72, 73 and the first through hole (not shown).
A structure in which 55 and 56 are connected in series is obtained [FIG.

In this embodiment, an aramid resin is used for the insulating substrate 1 and a polyimide resin is used for the mask film 2.
Peeling of the mask film did not occur. The heat shrinkage of aramid resin and polyimide resin are each about 0.2%,
0.4%, which is considered to be not so different.
Therefore, even if the mask film 2 is not made of the same material as the insulating substrate, a mask film having a difference in thermal deformation rate of, for example, within 1% can prevent the mask film from peeling and mask blurring. Further, in the present embodiment, separation processing of a solar cell having thin films formed on both surfaces of a light-transmitting substrate, which was difficult with a conventional laser processing method, can be performed with high accuracy. [Embodiment 4] FIGS. 6A to 6E are cross-sectional views of main steps in a manufacturing process order for explaining a manufacturing method of a thin-film solar cell according to still another embodiment to which the manufacturing method of the present invention is applied. It is.

This example shows an example in which a thin-film solar cell is formed on a hard insulating substrate. Hereinafter, the manufacturing method of the present invention will be described with reference to FIG. A mask film 2 made of PEN having a thickness of 1 μm is thermocompression-bonded at a high temperature of 300 ° C. on a glass substrate 1 having a thickness of 1 mm [FIG.
(A)]. A silver film 3 'is formed at a low temperature of 0.2 μm on the glass substrate 1 by a sputtering method [FIG.

Next, the mask film 2 on the glass substrate 1
Is peeled off to form a thin film mask 3 made of silver [FIG. An aluminum film was formed thereon by sputtering at a high temperature to make the aluminum surface uneven. Thereafter, high reflectivity silver is sputter-deposited to form the first electrode layer 10, and then the amorphous semiconductor layer 20 as a power generation layer is formed.
Lastly, the indium oxide film serving as the second electrode layer 30 is set to 0.1.
1 μm is formed [FIG.

The thin film mask 3 and the film laminated on the thin film mask 3 are removed using an adhesive roll. First electrode layer 1
0, the amorphous semiconductor layer 20 and the second electrode layer 30 are divided into three unit cells 57, 58 and 59 [FIG. Then, a series connection structure in which the unit cells 57, 58, and 59 were connected in series was formed. In this embodiment, a thin film mask 3 of a silver film was first formed using a glass plate for the insulating substrate 1 and a polyimide resin for the mask film 2, and lift-off was performed using the thin film mask 3. Peeling of the thin film 3 did not occur. In addition, since the thin thin film 3 is used as a mask, mask shift and mask blur, which have been problems in the conventional mask forming method, are eliminated, and a thin mask having a thin mask width of about 50 μm can be easily formed.

In the third embodiment, particularly when forming unit cells completely separated from each other as in the second embodiment, there is a problem in a method of holding the mask film before the unit cells are pressed against the insulating substrate. In such a case, a mask film may be attached to a support film, and the mask film may be transferred from the support film to an insulating substrate. Embodiment 5 FIG. 10A is an elevation view of a mask film forming apparatus using a screen printing method, and FIG. 10B is a perspective plan view seen from above.

The polyimide insulating substrate 1 is roll-to-roll conveyed by a feed roll 4 and a take-up roll 5. A transfer positioning hole 6 is formed in the insulating substrate 1. The positioning sensor 7 recognizes the transfer hole 6 and can stop the transfer. A paste 81 containing a polyimide resin as a main component is applied by a screen printer 82,
By baking in the heating furnace 83, the mask film 2 is formed on the insulating substrate 1.

When the screen printing method is used, not only can the mask formation accuracy be increased, but also a mask having a complicated shape,
Alternatively, masks separated from each other can be easily formed.
In addition, the thickness of the mask film 2 can be reduced to about several μm. As a printing method, an ink jet method may be used. In that case, there is an advantage that the insulating substrate does not need to be stopped when the mask film is formed, and can be continuously formed.

[0039]

As described above, the present invention relates to a method of manufacturing a thin-film semiconductor device comprising a plurality of thin-film semiconductor elements formed on an insulating substrate. After fixing on the thin film forming surface of the substrate and laminating the thin film semiconductor layer and the electrode layer, the mask film is peeled off from the insulating substrate, and the thin film semiconductor layer and the electrode layer on the laminated insulating substrate are separated from each other.

Since the substrate is thermally deformed in the same manner as the substrate, it can be applied to a resin substrate, and it is possible to form a high-precision pattern without mask peeling or mask blur due to thermal stress during a film forming process. Instead, the pattern itself can be made finer. Further, since the mask film itself has the same degree of flexibility as the substrate, the mask film can be applied to a roll-to-roll transfer method, which contributes to an improvement in productivity.

[Brief description of the drawings]

FIGS. 1A to 1D are cross-sectional views showing a solar cell according to a first embodiment in the order of the manufacturing steps according to the manufacturing method of the present invention.

2A is a plan view of a solar cell according to a first embodiment of the present invention, and FIG. 2B is a cross-sectional view thereof.

3A is a plan view of a solar cell according to a third embodiment of the present invention, and FIG. 3B is a plan view of a back surface.

FIGS. 4A and 4B are cross-sectional views of a solar cell of a third embodiment according to the manufacturing method of the present invention.

FIGS. 5A to 5E are cross-sectional views showing the order of manufacturing steps of a solar cell according to a third embodiment according to the manufacturing method of the present invention.

FIGS. 6A to 6E are cross-sectional views showing the order of manufacturing steps of a solar cell according to a fourth embodiment according to the manufacturing method of the present invention.

7A is an elevation view of a solar cell manufacturing apparatus according to a first embodiment of the present invention, and FIG. 7B is a perspective plan view thereof.

8A is a view of a mask film of a solar cell according to a first embodiment of the present invention, FIG. 8B is a partial sectional view thereof, and FIG. 8C is an enlarged view of a corner.

FIG. 9 is an enlarged sectional view of a joint between an insulating substrate and a mask film according to a second embodiment of the present invention.

FIG. 10A is an elevation view of a solar cell manufacturing apparatus according to a fifth embodiment of the present invention, and FIG. 10B is a perspective plan view thereof.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Mask film 3 Thin film mask 4 Sending roll 5 Winding roll 6 Positioning hole 7 Positioning hole sensor 8 Release sheet 9 Heater 10 First electrode layer 11 Missing portion of first electrode layer 12 Separator 13 Separator 14 Mask Film roll 20 Thin film semiconductor layer 30 Second electrode layer 40 Third electrode layer 40a Third electrode inner layer 40b Third electrode outer layer 51, 52, 53 Unit cells 54, 55, 56 Unit cells 57, 58, 59 Unit cells 61-66 First through hole 71-76 Second through hole 81 Paste 82 Screen printing machine 83 Heating furnace

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[Procedure amendment]

[Submission date] August 20, 1996

[Procedure amendment 1]

[Document name to be amended] Drawing

[Correction target item name] Fig. 8

[Correction method] Change

[Correction contents]

FIG. 8

Claims (14)

[Claims] In a method of manufacturing a thin film semiconductor device comprising a plurality of thin film semiconductor elements on an insulating substrate at the same time using a mask, a mask film having substantially the same thermal deformation rate as the substrate is formed on the insulating substrate. After the thin film semiconductor layer and the electrode layer are stacked on each other, the mask film is peeled off from the insulating substrate to separate the thin film semiconductor layer and the electrode layer on the stacked insulating substrate from each other. A method for manufacturing a thin film semiconductor device, comprising a thin film semiconductor device comprising a thin film semiconductor element. 2. An insulating substrate having a light-transmitting property, a plurality of thin film semiconductor elements formed on a surface of the insulating substrate, and a plurality of electrode layers electrically connected to the thin film semiconductor elements formed on a back surface. The method for manufacturing a thin film semiconductor device according to claim 1, wherein 3. A method of manufacturing a thin-film semiconductor device comprising a plurality of thin-film semiconductor devices on an insulating substrate by using a mask at the same time as a thin-film semiconductor device having the same thermal deformation rate as a substrate. By fixing the mask film of the pattern on the thin film forming surface of the insulating substrate, forming a thin film having low adhesive strength with the insulating substrate on the insulating substrate including the mask film, and peeling the mask film from the insulating substrate After forming a thin film mask having a weak adhesive force with the insulating substrate and laminating the thin film semiconductor layer and the electrode layer, the thin film mask having a weak adhesive force with the insulating substrate is peeled off from the insulating substrate to form the laminated insulating film. A thin film semiconductor device comprising a plurality of thin film semiconductor elements, wherein the thin film semiconductor layer and the electrode layer on the substrate are separated from each other. Method. 4. The method according to claim 1, wherein a mask film of the same material as the insulating substrate is used. 5. A method of fixing a mask film to a substrate by applying pressure between the mask film and the substrate at a temperature higher than a temperature at which the thin film semiconductor layer is formed, wherein the mask film is made of an adhesive resin film. 5. The method for manufacturing a thin film semiconductor device according to claim 1, wherein: 6. The thin film semiconductor device according to claim 1, wherein an adhesive resin is applied on the substrate by using a printing method, and is baked to fix the mask film to the insulating substrate. Production method. 7. The method for manufacturing a thin film semiconductor device according to claim 6, wherein an adhesive resin is applied on the substrate by using a screen printing method, and the coated resin is baked to fix the mask film to the substrate. 8. A method for manufacturing a thin film semiconductor device according to claim 6, wherein an adhesive resin is applied on the substrate by using an ink jet printing method, and is baked to fix the mask film to the substrate. 9. The method according to claim 1, wherein the surface of the insulating substrate is roughened, the mask film made of an adhesive resin is brought into close contact with the insulating substrate, and the mask film is fixed to the substrate by applying a high voltage. 5. The method for manufacturing a thin-film semiconductor device according to any one of items 1 to 4. 10. The method for manufacturing a thin film semiconductor device according to claim 1, wherein the corners of the openings of the mask film are curved. 11. The mask film according to claim 1, wherein the area of the mask film is larger on the substrate side than on the film adhering side.
A method for manufacturing a thin film semiconductor device according to any one of the above. 12. The method according to claim 1, wherein the mask film is removed by a roll having an adhesive surface. 13. A roll-to-roll process in which an insulating substrate wound on a roll is continuously fed out, a thin film semiconductor device is formed, and then wound on a winding roll. The method for manufacturing a thin film semiconductor device according to any one of the above. 14. The process according to claim 1, wherein the insulating substrate wound on the roll is intermittently fed out, and after forming the thin film semiconductor device, the process is carried out by a stepping roll method of winding on a winding roll. A method for manufacturing a thin film semiconductor device according to any one of the above.