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JPH11100502A - Polyimide resin composition - Google Patents

Polyimide resin composition

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Publication number
JPH11100502A
JPH11100502A JP26337297A JP26337297A JPH11100502A JP H11100502 A JPH11100502 A JP H11100502A JP 26337297 A JP26337297 A JP 26337297A JP 26337297 A JP26337297 A JP 26337297A JP H11100502 A JPH11100502 A JP H11100502A
Authority
JP
Japan
Prior art keywords
polyimide
formula
embedded image
resin composition
polyimide resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26337297A
Other languages
Japanese (ja)
Inventor
Kenji Miyao
憲治 宮尾
Toshimasa Eguchi
敏正 江口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP26337297A priority Critical patent/JPH11100502A/en
Publication of JPH11100502A publication Critical patent/JPH11100502A/en
Pending legal-status Critical Current

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  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a composition which is excellent in insulating properties at a low calcination temperature of a specific temperature or below and has a high transmittance by using a polyimide precursor or a polyimide each having a specific repeating unit as a resin component. SOLUTION: A polyimide precursor is represented by formula I (X is a tetravalent organic group represented by formula II or the like; and R is H or alkyl). A polyimide is represented by formula III (the marks are the same as in formula I). The obtained composition is a resin composition containing a polyimide compound of formula I or III and a polar organic solvent (e.g.: N-methyl-2- pyrrolidone) and is excellent in insulating properties at a low calcination temperature of 250 deg.C or below and excellent in a transmittance of light in the short wavelength region of about 400 nm. Although the resin component of the composition is a polyamide acid or a polyamide ester which is a precursor to a polyimide and a polyimide resin which is a solvent-soluble polyimide, an epoxy resin may be mixed or an inorganic filler may be added.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はポリイミド系樹脂の
被膜、フィルムを得る材料であり、さらに詳しくは誘電
率が極めて低く、膜厚の均一な被膜、フィルムを得るこ
とができるポリイミド樹脂組成物に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a material for obtaining a polyimide resin film or film, and more particularly to a polyimide resin composition capable of obtaining a film or film having a very low dielectric constant and a uniform film thickness. Things.

【0002】[0002]

【従来の技術】ポリイミド系樹脂の被膜およびフィルム
は、高耐熱性、高純度、高耐環境性等の特徴を持ち、電
子機器を中心に各種用途に用いられている。通常、ポリ
イミド系樹脂の被膜およびフィルムは、ポリイミド前駆
体であるポリアミド酸、ポリアミド酸エステル、ポリイ
ソイミド等の溶液や溶剤可溶なポリイミド、ポリアミド
イミドの溶液を基板上に塗布し、焼成することにより得
る。
2. Description of the Related Art Polyimide-based coatings and films have characteristics such as high heat resistance, high purity, and high environmental resistance, and are used for various purposes mainly in electronic equipment. Usually, a coating and a film of a polyimide resin are obtained by applying a solution of a polyimide precursor such as a polyamic acid, a polyamic acid ester, or a polyisoimide, or a solvent-soluble polyimide, or a polyamideimide solution on a substrate, and baking the applied solution. .

【0003】焼成後の被膜は一般に濃色に着色してお
り、400nm前後の短波長域の光の透過率に優れたも
のは少なく、高透過率を必要とされる用途、例えば、液
晶ディスプレイや光通信ケーブルなどに適用することが
できなかった。
[0003] The film after baking is generally colored deep, and few of them are excellent in transmittance of light in a short wavelength region of about 400 nm, and are used in applications requiring high transmittance, such as liquid crystal displays and liquid crystal displays. It could not be applied to optical communication cables and the like.

【0004】絶縁材料として用いた場合、従来のフッ素
を導入したポリイミド系樹脂の被膜、フィルムでは、焼
成温度を300℃以上にしなければ、1MHzでの誘電
率が3を下回ることは非常に困難なことであり、低温プ
ロセスには不適であった。
When used as an insulating material, it is very difficult for a conventional fluorine-containing polyimide resin film or film to have a dielectric constant of less than 3 at 1 MHz unless the firing temperature is set to 300 ° C. or more. This was unsuitable for the low-temperature process.

【0005】[0005]

【発明が解決しようとする課題】本発明は、上記のよう
なポリイミド樹脂組成物の問題点を解決し、250℃以
下の低い焼成温度での絶縁性に優れ、かつ、高い透過率
を有する、ポリイミド樹脂組成物である。
SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems of the polyimide resin composition, has excellent insulation at a low firing temperature of 250 ° C. or lower, and has high transmittance. It is a polyimide resin composition.

【0006】[0006]

【課題を解決する手段】本発明は、 (1)一般式(1)で表される繰り返し単位を有するポ
リイミド前駆体を樹脂成分とするポリイミド樹脂組成物
であり、
The present invention provides (1) a polyimide resin composition containing a polyimide precursor having a repeating unit represented by the general formula (1) as a resin component,

【0007】[0007]

【化1】 (式中、Xは4価の有機基を表し、RはHまたはアルキ
ル基を表す。)
Embedded image (In the formula, X represents a tetravalent organic group, and R represents H or an alkyl group.)

【0008】(2)Xが式2,3,4,5,6,7,
8,9,10および/または11である(1)記載のポ
リイミド前駆体を樹脂成分とするポリイミド樹脂組成物
であり、
(2) X is represented by the formulas 2, 3, 4, 5, 6, 7,
A polyimide resin composition comprising the polyimide precursor according to (1), which is 8, 9, 10, and / or 11, as a resin component,

【0009】[0009]

【化2】 Embedded image

【0010】[0010]

【化3】 Embedded image

【0011】[0011]

【化4】 Embedded image

【0012】[0012]

【化5】 Embedded image

【0013】[0013]

【化6】 Embedded image

【0014】[0014]

【化7】 Embedded image

【0015】[0015]

【化8】 Embedded image

【0016】[0016]

【化9】 Embedded image

【0017】[0017]

【化10】 Embedded image

【0018】[0018]

【化11】 Embedded image

【0019】(3)一般式(12)で表される繰り返し
単位を有するポリイミドを樹脂成分とするポリイミド樹
脂組成物であり、
(3) A polyimide resin composition containing a polyimide having a repeating unit represented by the general formula (12) as a resin component,

【0020】[0020]

【化12】 (式中、Xは4価の有機基をを表し、RはHまたはアル
キル基を表す。)
Embedded image (In the formula, X represents a tetravalent organic group, and R represents H or an alkyl group.)

【0021】(4)Xが式2,3,4,5,6,7,
8,9,10および/または11である(3)記載のポ
リイミドを樹脂成分とするポリイミド樹脂組成物であ
る。
(4) X is represented by the formulas 2, 3, 4, 5, 6, 7,
A polyimide resin composition containing the polyimide according to (3), which is 8, 9, 10, and / or 11, as a resin component.

【0022】本発明のポリイミド樹脂組成物は、一般式
(1)または(12)と、極性有機溶媒を成分とする樹
脂組成物である。
The polyimide resin composition of the present invention is a resin composition containing the general formula (1) or (12) and a polar organic solvent as a component.

【0023】一般式(1)および(12)の溶剤として
は、N−メチル−2−ピロリドン、γ−ブチロラクト
ン、ジメチルアセトアミド、N−ビニル−2−ピロリド
ン、ジメチルスルホキシド等が挙げられるがこれらに限
定されるものではない。
Examples of the solvents of the general formulas (1) and (12) include, but are not limited to, N-methyl-2-pyrrolidone, γ-butyrolactone, dimethylacetamide, N-vinyl-2-pyrrolidone, dimethylsulfoxide and the like. It is not something to be done.

【0024】本発明中の樹脂成分はポリイミド前駆体で
あるポリアミド酸、ポリアミド酸エステル、および溶剤
可溶なポリイミド等のポリイミド系樹脂であるが、エポ
キシ樹脂等を混合したり、無機物フィラーを添加しても
よい。
The resin component in the present invention is a polyimide-based resin such as polyamide acid, polyamic acid ester, and a polyimide soluble in a solvent, which are polyimide precursors, and may be mixed with an epoxy resin or the like or added with an inorganic filler. You may.

【0025】[0025]

【実施例】以下、実施例により詳細を説明するが、本発
明はこれらの実施例によって何等限定されるものではな
い。
The present invention will be described below in detail with reference to examples, but the present invention is not limited to these examples.

【0026】(合成例1)温度計、攪拌機、原料投入
口、乾燥窒素ガス導入管を備えた四つ口セパラブルフラ
スコ中、2,2−ビス(3−アミノ−4−メチルフェニ
ル)ヘキサフルオロプロパン33.8g(0.10モ
ル)をN−メチル−2−ピロリドン(NMP)256.
9g中に溶解させる。この系に、原料投入口からブタン
テトラカルボン酸二無水物19.8g(0.10モル)
を投入し、系の温度を10℃に保ちながら窒素流入下、
5時間攪拌を続けた。系の温度を室温に戻してさらに3
時間攪拌を続け、ポリアミド酸のNMP溶液を得た。
Synthesis Example 1 In a four-neck separable flask equipped with a thermometer, a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube, 2,2-bis (3-amino-4-methylphenyl) hexafluoro 33.8 g (0.10 mol) of propane was added to N-methyl-2-pyrrolidone (NMP).
Dissolve in 9 g. 19.8 g (0.10 mol) of butanetetracarboxylic dianhydride was added to the system from the raw material inlet.
And keeping the temperature of the system at 10 ° C under nitrogen flow,
Stirring was continued for 5 hours. Return the temperature of the system to room temperature and
Stirring was continued for an hour to obtain an NMP solution of polyamic acid.

【0027】(合成例2)温度計、攪拌機、原料投入
口、乾燥窒素ガス導入管を備えた四つ口セパラブルフラ
スコ中、2,2−ビス(3−アミノ−4−メチルフェニ
ル)ヘキサフルオロプロパン33.8g(0.10モ
ル)をN−メチル−2−ピロリドン(NMP)312.
8g中に溶解させる。この系に、原料投入口から2,2
−ビス(3,4−アンハイドロジカルボキシフェニル)
ヘキサフルオロプロパン44.4g(0.10モル)を
投入し、系の温度を10℃に保ちながら窒素流入下、5
時間攪拌を続けた。系の温度を室温に戻してさらに3時
間攪拌を続け、ポリアミド酸のNMP溶液を得た。
Synthesis Example 2 In a four-neck separable flask equipped with a thermometer, a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube, 2,2-bis (3-amino-4-methylphenyl) hexafluoro 33.8 g (0.10 mol) of propane was added to N-methyl-2-pyrrolidone (NMP).
Dissolve in 8 g. In this system, 2, 2
-Bis (3,4-anhydrodicarboxyphenyl)
Hexafluoropropane (44.4 g, 0.10 mol) was charged, and the system temperature was maintained at 10 ° C., and nitrogen was introduced thereinto.
Stirring was continued for hours. The temperature of the system was returned to room temperature, and stirring was further continued for 3 hours to obtain an NMP solution of polyamic acid.

【0028】(合成例3)温度計、攪拌機、原料投入
口、乾燥窒素ガス導入管を備えた四つ口セパラブルフラ
スコ中、2,2−ビス(3−アミノ−4−メチルフェニ
ル)ヘキサフルオロプロパン44.4g(0.10モ
ル)をN−メチル−2−ピロリドン(NMP)240.
9g中に溶解させる。この系に、原料投入口から5−
(2,5−ジオキソテトラヒドロフリル)−3−メチル
−3−シクロヘキセン−1,2−ジカルボン酸無水物2
6.4g(0.10モル)を投入し、系の温度を10℃
に保ちながら窒素流入下、5時間攪拌を続けた。系の温
度を室温に戻してさらに3時間攪拌を続け、ポリアミド
酸のNMP溶液を得た。
(Synthesis Example 3) In a four-neck separable flask equipped with a thermometer, a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube, 2,2-bis (3-amino-4-methylphenyl) hexafluoro 44.4 g (0.10 mol) of propane was added to N-methyl-2-pyrrolidone (NMP).
Dissolve in 9 g. In this system, 5-
(2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride 2
6.4 g (0.10 mol) was charged, and the temperature of the system was set to 10 ° C.
And stirring was continued for 5 hours under nitrogen flow. The temperature of the system was returned to room temperature, and stirring was further continued for 3 hours to obtain an NMP solution of polyamic acid.

【0029】(合成例4)温度計、攪拌機、原料投入
口、乾燥窒素ガス導入管を備えた四つ口セパラブルフラ
スコ中、2,2’−ビス(トリフルオロメチル)ベンジ
ジン32.0g(0.10モル)をN−メチル−2−ピ
ロリドン(NMP)305.6g中に溶解させる。この
系に、原料投入口から2,2−ビス(3,4−アンハイ
ドロジカルボキシフェニル)ヘキサフルオロプロパン4
4.4g(0.10モル)を投入し、系の温度を10℃
に保ちながら窒素流入下、5時間攪拌を続けた。系の温
度を室温に戻してさらに3時間攪拌を続け、ポリアミド
酸のNMP溶液を得た。
(Synthesis Example 4) In a four-neck separable flask equipped with a thermometer, a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube, 32.0 g of 2,2'-bis (trifluoromethyl) benzidine (0 .10 mol) in 305.6 g of N-methyl-2-pyrrolidone (NMP). In this system, 2,2-bis (3,4-anhydrodicarboxyphenyl) hexafluoropropane 4
4.4 g (0.10 mol) was charged, and the temperature of the system was reduced to 10 ° C.
And stirring was continued for 5 hours under nitrogen flow. The temperature of the system was returned to room temperature, and stirring was further continued for 3 hours to obtain an NMP solution of polyamic acid.

【0030】(合成例5)温度計、攪拌機、原料投入
口、乾燥窒素ガス導入管を備えた四つ口セパラブルフラ
スコ中、2,2−ビス(4−(4−アミノフェノキシ)
フェニル)プロパン41.1g(0.10モル)をN−
メチル−2−ピロリドン(NMP)251.5g中に溶
解させる。この系に、原料投入口からピロメリット酸無
水物21.8g(0.10モル)を投入し、系の温度を
10℃に保ちながら窒素流入下、5時間攪拌を続けた。
系の温度を室温に戻してさらに3時間攪拌を続け、ポリ
アミド酸のNMP溶液を得た。
Synthesis Example 5 In a four-neck separable flask equipped with a thermometer, a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube, 2,2-bis (4- (4-aminophenoxy))
Phenyl) propane (41.1 g, 0.10 mol)
Dissolve in 251.5 g of methyl-2-pyrrolidone (NMP). To this system, 21.8 g (0.10 mol) of pyromellitic anhydride was introduced from the raw material introduction port, and stirring was continued for 5 hours under nitrogen flow while maintaining the system temperature at 10 ° C.
The temperature of the system was returned to room temperature, and stirring was further continued for 3 hours to obtain an NMP solution of polyamic acid.

【0031】(実施例1)合成例1で得たポリアミド酸
溶液をNMP溶液に溶解し、15%溶液とし、厚さ10
0μmのアルミ板にスピンコートで塗布、250℃で焼
成し10μmのポリイミド膜を形成した。その後このア
ルミ板を、JIS−K6911に従い、誘電率の測定を
行った。結果、1MHzでの誘電率は2.91であり、4
00nmでの透過率は90%であった。
Example 1 The polyamic acid solution obtained in Synthesis Example 1 was dissolved in an NMP solution to form a 15% solution,
It was applied on a 0 μm aluminum plate by spin coating and baked at 250 ° C. to form a 10 μm polyimide film. Thereafter, the dielectric constant of the aluminum plate was measured according to JIS-K6911. As a result, the dielectric constant at 1 MHz was 2.91 and 4
The transmittance at 00 nm was 90%.

【0032】(実施例2)合成例2で得たポリアミド酸
溶液をNMP溶液に溶解し、15%溶液とし、厚さ10
0μmのアルミ板にスピンコートで塗布、250℃で焼
成し10μmのポリイミド膜を形成した。その後このア
ルミ板を、JIS−K6911に従い、誘電率の測定を
行った。結果、1MHzでの誘電率は2.68であり、4
00nmでの透過率は88%であった。
(Example 2) The polyamic acid solution obtained in Synthesis Example 2 was dissolved in an NMP solution to make a 15% solution,
It was applied on a 0 μm aluminum plate by spin coating and baked at 250 ° C. to form a 10 μm polyimide film. Thereafter, the dielectric constant of the aluminum plate was measured according to JIS-K6911. As a result, the dielectric constant at 1 MHz is 2.68 and 4
The transmittance at 00 nm was 88%.

【0033】(比較例1)合成例3で得たポリアミド酸
溶液をNMP溶液に溶解し、15%溶液とし、厚さ10
0μmのアルミ板にスピンコートで塗布、250℃で焼
成し10μmのポリイミド膜を形成した。その後このア
ルミ板を、JIS−K6911に従い、誘電率の測定を
行った。結果、1MHzでの誘電率は3.40であり、4
00nmでの透過率は36%であった。
Comparative Example 1 The polyamic acid solution obtained in Synthesis Example 3 was dissolved in an NMP solution to make a 15% solution,
It was applied on a 0 μm aluminum plate by spin coating and baked at 250 ° C. to form a 10 μm polyimide film. Thereafter, the dielectric constant of the aluminum plate was measured according to JIS-K6911. As a result, the dielectric constant at 1 MHz was 3.40 and 4
The transmittance at 00 nm was 36%.

【0034】(比較例2)合成例4で得たポリアミド酸
溶液をNMP溶液に溶解し、15%溶液とし、厚さ10
0μmのアルミ板にスピンコートで塗布、250℃で焼
成し10μmのポリイミド膜を形成した。その後このア
ルミ板を、JIS−K6911に従い、誘電率の測定を
行った。結果、1MHzでの誘電率は3.10であり、4
00nmでの透過率は95%であった。
(Comparative Example 2) The polyamic acid solution obtained in Synthesis Example 4 was dissolved in an NMP solution to make a 15% solution,
It was applied on a 0 μm aluminum plate by spin coating and baked at 250 ° C. to form a 10 μm polyimide film. Thereafter, the dielectric constant of the aluminum plate was measured according to JIS-K6911. As a result, the dielectric constant at 1 MHz is 3.10 and 4
The transmittance at 00 nm was 95%.

【0035】(比較例3)合成例5で得たポリアミド酸
溶液をNMP溶液に溶解し、15%溶液とし、厚さ10
0μmのアルミ板にスピンコートで塗布、250℃で焼
成し10μmのポリイミド膜を形成した。その後このア
ルミ板を、JIS−K6911に従い、誘電率の測定を
行った。結果、1MHzでの誘電率は3.4であり、40
0nmでの透過率は28.4%であった。
Comparative Example 3 The polyamic acid solution obtained in Synthesis Example 5 was dissolved in an NMP solution to make a 15% solution,
It was applied on a 0 μm aluminum plate by spin coating and baked at 250 ° C. to form a 10 μm polyimide film. Thereafter, the dielectric constant of the aluminum plate was measured according to JIS-K6911. As a result, the dielectric constant at 1 MHz is 3.4 and 40
The transmittance at 0 nm was 28.4%.

【0036】実施例1、2では、1MHzでの誘電率は低
く、400nmでの透過率は高かった。比較例1では、酸
無水物にフッ素を導入していないため、1MHzでの誘電
率が高かった。また、焼成した膜が濃色に着色してお
り、400nmでの透過率が低かった。比較例2では、焼
成温度が低すぎたため、1MHzでの誘電率が高かった。
比較例3では、酸無水物、ジアミンともにフッ素を導入
していないため、誘電率が高かった。また、酸無水物に
芳香族を用いたため、400nmでの透過率が低かった。
In Examples 1 and 2, the dielectric constant at 1 MHz was low, and the transmittance at 400 nm was high. In Comparative Example 1, since no fluorine was introduced into the acid anhydride, the dielectric constant at 1 MHz was high. Further, the fired film was colored dark, and the transmittance at 400 nm was low. In Comparative Example 2, since the firing temperature was too low, the dielectric constant at 1 MHz was high.
In Comparative Example 3, the dielectric constant was high because no fluorine was introduced into both the acid anhydride and the diamine. In addition, the transmittance at 400 nm was low because an aromatic was used as the acid anhydride.

【0037】[0037]

【発明の効果】本発明のポリイミド樹脂組成物は、25
0℃以下の低い焼成温度での絶縁性に優れ、かつ、高い
透過率を有する、ポリイミド樹脂組成物である。
The polyimide resin composition of the present invention has a composition of 25
A polyimide resin composition having excellent insulation at a low firing temperature of 0 ° C. or less and having high transmittance.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 一般式(1)で表される繰り返し単位を
有するポリイミド前駆体を樹脂成分とするポリイミド樹
脂組成物。 【化1】 (式中、Xは4価の有機基を表し、RはHまたはアルキ
ル基を表す。)
1. A polyimide resin composition comprising, as a resin component, a polyimide precursor having a repeating unit represented by the general formula (1). Embedded image (In the formula, X represents a tetravalent organic group, and R represents H or an alkyl group.)
【請求項2】 Xが式2,3,4,5,6,7,8,
9,10および/または11である請求項1記載のポリ
イミド前駆体を樹脂成分とするポリイミド樹脂組成物。 【化2】 【化3】 【化4】 【化5】 【化6】 【化7】 【化8】 【化9】 【化10】 【化11】
2. X is represented by the formula 2, 3, 4, 5, 6, 7, 8,
2. A polyimide resin composition comprising the polyimide precursor according to claim 1 as a resin component. Embedded image Embedded image Embedded image Embedded image Embedded image Embedded image Embedded image Embedded image Embedded image Embedded image
【請求項3】 一般式(12)で表される繰り返し単位
を有するポリイミドを樹脂成分とするポリイミド樹脂組
成物。 【化12】 (式中、Xは4価の有機基をを表し、RはHまたはアル
キル基を表す。)
3. A polyimide resin composition comprising a polyimide having a repeating unit represented by the general formula (12) as a resin component. Embedded image (In the formula, X represents a tetravalent organic group, and R represents H or an alkyl group.)
【請求項4】 Xが式2,3,4,5,6,7,8,
9,10および/または11である請求項3記載のポリ
イミドを樹脂成分とするポリイミド樹脂組成物。
4. The method according to claim 1, wherein X is of the formula 2, 3, 4, 5, 6, 7, 8,
A polyimide resin composition comprising the polyimide as a resin component according to claim 3, which is 9, 10, and / or 11.
JP26337297A 1997-09-29 1997-09-29 Polyimide resin composition Pending JPH11100502A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26337297A JPH11100502A (en) 1997-09-29 1997-09-29 Polyimide resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26337297A JPH11100502A (en) 1997-09-29 1997-09-29 Polyimide resin composition

Publications (1)

Publication Number Publication Date
JPH11100502A true JPH11100502A (en) 1999-04-13

Family

ID=17388584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26337297A Pending JPH11100502A (en) 1997-09-29 1997-09-29 Polyimide resin composition

Country Status (1)

Country Link
JP (1) JPH11100502A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000022029A1 (en) * 1998-10-13 2000-04-20 Nissan Chemical Industries, Ltd. Polyimide precursors and polyimides

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000022029A1 (en) * 1998-10-13 2000-04-20 Nissan Chemical Industries, Ltd. Polyimide precursors and polyimides
US6489431B1 (en) 1998-10-13 2002-12-03 Nissan Chemical Industries, Ltd. Polyimide precursors and polyimides
JP4639471B2 (en) * 1998-10-13 2011-02-23 日産化学工業株式会社 Polyimide material

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