JPH11135534A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH11135534A JPH11135534A JP9299924A JP29992497A JPH11135534A JP H11135534 A JPH11135534 A JP H11135534A JP 9299924 A JP9299924 A JP 9299924A JP 29992497 A JP29992497 A JP 29992497A JP H11135534 A JPH11135534 A JP H11135534A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- center
- wedge
- connection part
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48455—Details of wedge bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、ワイヤ接続部を有
する半導体装置に関するものである。The present invention relates to a semiconductor device having a wire connection.
【0002】[0002]
【従来の技術】従来の半導体装置においては、図6に示
す半導体チップ1とのワイヤ2の接続部2aのC−C断
面は、図5に示すように、中央部が凸となるような形状
を有していた。中央が凸となるのは、図7に示すよう
に、ボンデイングを行うときのウェッジ3に溝3aが形
成されているためである。溝3aは、図8に示すように
ワイヤ2を抑えるときの位置決めのために設けられてい
る。なお図8は図7のD−D断面である。この種の従来
装置は、特開平9−92672号公報に示されている。2. Description of the Related Art In a conventional semiconductor device, a CC section of a connecting portion 2a of a wire 2 to a semiconductor chip 1 shown in FIG. 6 has a shape such that a central portion is convex as shown in FIG. Had. The reason why the center is convex is that the groove 3a is formed in the wedge 3 when performing bonding, as shown in FIG. The groove 3a is provided for positioning when holding down the wire 2 as shown in FIG. FIG. 8 is a sectional view taken along the line DD of FIG. A conventional apparatus of this type is disclosed in Japanese Patent Application Laid-Open No. 9-92672.
【0003】[0003]
【発明が解決しようとする課題】このような装置におい
て、使用時にパワーのオンオフが繰り返されると、図1
0に示すようにワイヤ接続部2aとチップ1の間にき裂
5が進展し、ワイヤのはがれを生じることがあり、この
解決が課題となっていた。In such a device, when the power is repeatedly turned on and off at the time of use, FIG.
As shown in FIG. 0, a crack 5 may develop between the wire connecting portion 2a and the chip 1 and peeling of the wire may occur. This has been a problem to be solved.
【0004】[0004]
【課題を解決するための手段】ワイヤの接続部分の横断
面の形状を中央が凹んだ形状とすることにより、ワイヤ
と半導体チップの界面に作用する力を低減し、これによ
りワイヤのはがれを防止し、上記課題を解決できる。The force acting on the interface between the wire and the semiconductor chip is reduced by making the cross-sectional shape of the connecting portion of the wire concave at the center, thereby preventing the wire from coming off. Thus, the above problem can be solved.
【0005】[0005]
【発明の実施の形態】本発明の一実施例について、図面
を用いて説明する。図2は本発明の一実施例に基づく半
導体装置の要部の側面図を示している。図1は図2のA
−A断面を示す。図2において、半導体チップ1の上に
ワイヤ2が接続部2aで接続されており、この横断面の
形状は図1に示すように、中央が凹んだ形状となってい
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to the drawings. FIG. 2 shows a side view of a main part of a semiconductor device according to one embodiment of the present invention. FIG. 1 shows A in FIG.
3A shows a cross section. In FIG. 2, a wire 2 is connected to a semiconductor chip 1 at a connection portion 2a, and the cross section has a concave shape at the center as shown in FIG.
【0006】従来の装置では、図5に示すように接続部
2aの中央が凸となっている。この装置において、使用
時にパワーのオンオフが繰り返されると、この発熱によ
る温度上昇と温度低下が繰り返され、ワイヤ接続部2a
の温度も上昇下降を繰り返す。ここでワイヤ2は線膨張
係数の大きな金属であり、チップ1は線膨張係数の小さ
な半導体材料でできているため、両者の間には熱膨張差
が生じる。そこで、この構造について応力解析を行った
結果、図9に示すように中央部が凸の形状においては、
界面に大きな応力4が生じることがわかった。このこと
から、この大きな界面の応力4により、図10に示す界
面のき裂5の進展が生じ、はがれが生じることがわかっ
た。In the conventional device, the center of the connecting portion 2a is convex as shown in FIG. In this device, when the power is turned on and off repeatedly during use, the temperature rise and the temperature drop due to this heat generation are repeated, and the wire connection portion 2a
Temperature rises and falls repeatedly. Here, since the wire 2 is a metal having a large linear expansion coefficient and the chip 1 is made of a semiconductor material having a small linear expansion coefficient, a difference in thermal expansion occurs between the two. Therefore, as a result of performing a stress analysis on this structure, as shown in FIG.
It was found that a large stress 4 occurred at the interface. From this, it was found that this large interface stress 4 caused the interface crack 5 shown in FIG. 10 to grow and peeled off.
【0007】一方、本実施例の装置についても、応力解
析を実施した結果、発生応力は非常に小さくなることが
わかった。これにより、界面き裂の進展によるはがれ
が、防止できた。On the other hand, a stress analysis was also performed on the apparatus of this embodiment, and it was found that the generated stress was extremely small. As a result, peeling due to the growth of the interface crack was prevented.
【0008】本実施例では、超音波ボンデイングを採用
している。熱圧着ボンデイングでは、ボンデイング時に
接続部を高温に上げる必要があるのに対して、超音波ボ
ンデイングを用いることにより、温度を上げなくて済む
ため、高温を経ることによるチップ1および接続部2a
のダメージを低減できる。In this embodiment, ultrasonic bonding is employed. In the case of thermocompression bonding, it is necessary to raise the temperature of the connection portion during bonding. On the other hand, by using ultrasonic bonding, the temperature does not need to be raised.
Damage can be reduced.
【0009】しかし、超音波ボンデイングでは、超音波
振動を与えてボンデイングを行うため、超音波振動を接
続部2aに伝えるために、ワイヤ2をウェッジ3でしっ
かり抑え、固定することが重要である。このため、従来
の装置では、ワイヤ2のガイド用の凹み3aを有するウ
ェッジを用いており、このためワイヤの横断面の中央部
が凸形状となり、前述の問題が生じていた。However, in the ultrasonic bonding, since the ultrasonic vibration is applied to perform the bonding, it is important that the wire 2 is firmly held down by the wedge 3 and fixed in order to transmit the ultrasonic vibration to the connecting portion 2a. For this reason, in the conventional apparatus, a wedge having a recess 3a for guiding the wire 2 is used, and the center of the cross section of the wire has a convex shape, thus causing the above-described problem.
【0010】本実施例においては、図3に示すように、
先端中央において凸の形状を有するウェッジ3を用いて
いる。また、図3のB−B断面を図4に示す。図4に示
すように、ウェッジ3の先端の側面から見た形状とし
て、端においては凹みがあり、中央においては、凸の形
状を有する形とした。このウェッジ3を用いることによ
り、端の凹みでワイヤ2をしっかりガイドし健全な接合
を可能とし、中央の凸形状でワイヤ接続部2aの中央部
を凹ませ使用時の界面の応力を低減できた。これらの効
果を重ねあわせることにより、ワイヤ接続部2aの高信
頼化を可能としたものである。In this embodiment, as shown in FIG.
A wedge 3 having a convex shape at the center of the tip is used. FIG. 4 shows a BB cross section of FIG. As shown in FIG. 4, the shape of the wedge 3 as viewed from the side of the tip has a concave shape at the end and a convex shape at the center. By using this wedge 3, the wire 2 was firmly guided by the recess at the end, and sound bonding was enabled, and the central portion of the wire connecting portion 2a was recessed by the central convex shape to reduce the stress at the interface during use. . By superimposing these effects, the reliability of the wire connection portion 2a can be increased.
【0011】[0011]
【発明の効果】本発明の装置によれば、ワイヤの接続部
に生じる応力を低減し、接続部のはがれを防止できた。According to the apparatus of the present invention, the stress generated at the connecting portion of the wire can be reduced and the peeling of the connecting portion can be prevented.
【図1】本発明の実施例である半導体チップにワイヤ接
続した時の状態を示す側断面図。FIG. 1 is a side sectional view showing a state when wires are connected to a semiconductor chip according to an embodiment of the present invention.
【図2】図1の要部を示す側断面図。FIG. 2 is a side sectional view showing a main part of FIG. 1;
【図3】図2のワイヤ接続部のボンデイング時の状態を
示す横断面図。FIG. 3 is a cross-sectional view showing a state at the time of bonding of the wire connection part of FIG. 2;
【図4】図3のワイヤ接続部のボンデイング時の状態を
示す側面断面図。FIG. 4 is a side sectional view showing a state at the time of bonding of the wire connection portion of FIG. 3;
【図5】従来の装置の要部の横断面を示す図。FIG. 5 is a diagram showing a cross section of a main part of a conventional device.
【図6】従来の装置の要部の側面を示す図。FIG. 6 is a view showing a side surface of a main part of a conventional device.
【図7】従来の装置のワイヤ接続部のボンデイング時の
状態を示す横断面図。FIG. 7 is a cross-sectional view showing a state at the time of bonding of a wire connection part of a conventional device.
【図8】従来の装置のワイヤ接続部のボンデイング時の
状態を示す側面断面図。FIG. 8 is a side cross-sectional view showing a state at the time of bonding of a wire connection portion of a conventional device.
【図9】従来の装置の発生応力を示す図。FIG. 9 is a diagram showing a generated stress of a conventional device.
【図10】従来の装置のき裂の進展を示す図。FIG. 10 is a diagram showing crack propagation in a conventional device.
1…半導体チップ、2…ワイヤ、3…ウェッジ、4…発
生応力、5…き裂。1: semiconductor chip, 2: wire, 3: wedge, 4: generated stress, 5: crack.
Claims (1)
る半導体装置において、前記接続部分の横断面形状を中
央が凹んだ形状としたことを特徴とする半導体装置。1. A semiconductor device having a connection portion of a wire to a semiconductor chip, wherein the cross section of the connection portion has a concave shape at the center.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9299924A JPH11135534A (en) | 1997-10-31 | 1997-10-31 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9299924A JPH11135534A (en) | 1997-10-31 | 1997-10-31 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11135534A true JPH11135534A (en) | 1999-05-21 |
Family
ID=17878583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9299924A Pending JPH11135534A (en) | 1997-10-31 | 1997-10-31 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11135534A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007053130A (en) * | 2005-08-15 | 2007-03-01 | Matsushita Electric Ind Co Ltd | Joining structure and joining method |
| JP2019192917A (en) * | 2015-01-29 | 2019-10-31 | 京セラ株式会社 | Component for wedge bonding |
-
1997
- 1997-10-31 JP JP9299924A patent/JPH11135534A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007053130A (en) * | 2005-08-15 | 2007-03-01 | Matsushita Electric Ind Co Ltd | Joining structure and joining method |
| US8012869B2 (en) | 2005-08-15 | 2011-09-06 | Panasonic Corporation | Bonded structure and bonding method |
| JP2019192917A (en) * | 2015-01-29 | 2019-10-31 | 京セラ株式会社 | Component for wedge bonding |
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