JPH11130451A - Quartz glass jig for semiconductor heat treatment equipment - Google Patents
Quartz glass jig for semiconductor heat treatment equipmentInfo
- Publication number
- JPH11130451A JPH11130451A JP31457797A JP31457797A JPH11130451A JP H11130451 A JPH11130451 A JP H11130451A JP 31457797 A JP31457797 A JP 31457797A JP 31457797 A JP31457797 A JP 31457797A JP H11130451 A JPH11130451 A JP H11130451A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- jig
- heat treatment
- roughness
- semiconductor heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2204/00—Glasses, glazes or enamels with special properties
- C03C2204/08—Glass having a rough surface
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
(57)【要約】 （修正有）
【課題】マイクロクラックがなく表面に微細な凹凸を有
する半導体熱処理装置用石英ガラス治具を提供するこ
と。
【解決手段】石英ガラスからなる治具であって、その表
面が平均表面粗さＲa０．１〜２μｍ、最大粗さＲmax１
〜１０μｍにフロスト加工され、かつマイクロクラック
がなく、５％弗酸溶液で洗浄したときの平均表面粗さの
変化量が０．１μｍ／時間以下、最大粗さＲmaxの変化
量が１μｍ／時間以下、表面積増加率が１００％以下で
あることを特徴とする半導体熱処理装置用石英ガラス治
具．
(57) [Summary] (with correction) [PROBLEMS] To provide a quartz glass jig for a semiconductor heat treatment apparatus having no microcracks and having fine irregularities on the surface. The invention relates to a jig made of quartz glass, the surface average surface roughness R a 0.1-2 .mu.m, the maximum roughness R max 1
10 μm to 10 μm, no microcracks, no change in average surface roughness of 0.1 μm / hour or less when washed with 5% hydrofluoric acid solution, and change in maximum roughness R max of 1 μm / hour A quartz glass jig for a semiconductor heat treatment apparatus, wherein a surface area increase rate is 100% or less.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体熱処理装置用石
英ガラス治具、さらに詳しくはＣＶＤ装置や熱拡散装置
等の半導体熱処理装置に用いる石英ガラス製反応管や石
英ガラス製ウェーハボート、石英ガラスダミーウェーハ
等の石英ガラス治具に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quartz glass jig for a semiconductor heat treatment apparatus, and more particularly, to a quartz glass reaction tube, a quartz glass wafer boat, and a quartz glass used for a semiconductor heat treatment apparatus such as a CVD apparatus and a heat diffusion apparatus. The present invention relates to a quartz glass jig such as a dummy wafer.
【０００２】[0002]
【従来の技術】従来、シリコンウェーハのような半導体
素子を熱処理する工程で、熱処理用石英ガラス治具が使
用されてきた。前記石英ガラス治具を用いてＳｉウェー
ハ上にＣＶＤ（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐ
ｏｓｉｔｉｏｎ）法等でポリシリコン膜を形成したり、
或はドープ材を熱拡散すると、治具表面にもポリシリコ
ンやドープ材が堆積し、それが半導体素子の熱処理時に
剥離し半導体素子を汚染することが起った。前記ポリシ
リコンやドープ材は治具表面が平滑であるとその剥離が
容易でないところから、表面を粗面化した治具が例えば
特開平１ー１７００１９号公報等で提案されている。治
具表面の粗面化には、結晶質二酸化珪素粉等の無機粒子
を吹き付け機械的に削り取る、いわゆるサンドブラスト
法を用いるのが一般的であるが、サンドブラスト法で形
成した表面の凹凸の下にマイクロクラック層が発生し、
それがその後のクリーン化等のエッチング処理で選択的
にエッチングされ治具の表面積を大きくする上に、機械
的強度を低下する問題があった。前記表面積が大きくな
った石英ガラス治具を用いてガス反応を行わせると反応
に大きな影響が与えられ、例えばガラス製反応管の場
合、ガスやその反応生成物が表面の凹凸部に付着し、反
応管内のガス流を乱し、供給ガス量を一定にしても反応
を一定にすることができない等の問題があった。2. Description of the Related Art Conventionally, a quartz glass jig for heat treatment has been used in a step of heat treating a semiconductor element such as a silicon wafer. Using the quartz glass jig, a CVD (Chemical Vapor Depth) is formed on a Si wafer.
formation of a polysilicon film by the
Alternatively, when the dopant is thermally diffused, polysilicon and the dopant are also deposited on the jig surface, and peel off during heat treatment of the semiconductor element, thereby contaminating the semiconductor element. A jig having a roughened surface is proposed in, for example, Japanese Patent Application Laid-Open No. 1-170019 or the like, since the polysilicon and the doped material cannot be easily separated if the jig surface is smooth. In order to roughen the jig surface, it is common to use a so-called sand blast method, in which inorganic particles such as crystalline silicon dioxide powder are sprayed and mechanically shaved, but under the unevenness of the surface formed by the sand blast method. Micro crack layer occurs,
This is selectively etched by the subsequent etching process such as cleaning, so that the surface area of the jig is increased and the mechanical strength is lowered. When a gas reaction is performed using a quartz glass jig having the increased surface area, the reaction is significantly affected.For example, in the case of a glass reaction tube, a gas or a reaction product thereof adheres to uneven portions on the surface, There has been a problem that the gas flow in the reaction tube is disturbed and the reaction cannot be kept constant even if the amount of supplied gas is kept constant.
【０００３】[0003]
【発明が解決しようとする課題】こうした現状に鑑み本
発明者等は鋭意研究を重ねた結果、治具表面を平均表面
粗さＲa０．１〜２μｍ、最大粗さＲmax１〜１０μｍの
凹凸にマイクロクラックの発生のないフロスト加工をす
ると、５％弗酸溶液で洗浄しても平均表面粗さの変化量
が０．１μｍ／時間以下、最大粗さＲmaxの変化量が１
μｍ／時間以下、表面積増加率が１００％以下となり、
上記問題点が解決することを見出し、本発明を完成した
ものである。すなわちTHE INVENTION Problems to be Solved] The present inventors have in view of the above situation the result of extensive studies, the jig surface average surface roughness R a 0.1-2 .mu.m, the maximum roughness R max 1 to 10 [mu] m When frost processing is performed to prevent the occurrence of microcracks on the irregularities, the average surface roughness change is 0.1 μm / hour or less and the maximum roughness Rmax is 1 even after washing with a 5% hydrofluoric acid solution.
μm / hour or less, the surface area increase rate is 100% or less,
The inventors have found that the above problems can be solved, and have completed the present invention. Ie
【０００４】本発明は、マイクロクラックの発生のない
微細な凹凸を表面に有する石英ガラス治具を提供するこ
とを目的とする。[0004] It is an object of the present invention to provide a quartz glass jig having fine irregularities on its surface without generation of microcracks.
【０００５】また、本発明は、ガス反応を安定に行うこ
とのできる石英ガラス治具を提供することを目的とす
る。Another object of the present invention is to provide a quartz glass jig capable of stably performing a gas reaction.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成する本発
明は、石英ガラスからなる治具であって、その表面が平
均表面粗さＲa０．１〜２μｍ、最大粗さＲmax１〜１０
μｍにフロスト加工され、かつマイクロクラックがな
く、５％弗酸溶液で洗浄したときの平均表面粗さの変化
量が０．１μｍ／時間以下、最大粗さＲmaxの変化量が
１μｍ／時間以下、表面積増加率が１００％以下である
ことを特徴とする半導体熱処理装置用石英ガラス治具に
係る。Means for Solving the Problems] To achieve the above object the present invention provides a jig made of quartz glass, the average surface a surface roughness R a 0.1-2 .mu.m, the maximum roughness R max. 1 to 10
μm, no microcracks, no change in average surface roughness when washed with 5% hydrofluoric acid solution, 0.1 μm / hour or less, maximum roughness Rmax change, 1 μm / hour or less And a quartz glass jig for a semiconductor heat treatment apparatus, wherein a surface area increase rate is 100% or less.
【０００７】上記本発明の石英ガラス治具は、例えばＳ
ｉウェーハの表面に酸化膜や多結晶珪素膜をガス反応で
形成するＣＶＤ装置や熱拡散装置等に使用する治具であ
って、その表面がフロスト加工で凹凸が形成され、平均
表面粗さＲaが０．１〜２μｍ、最大表面粗さＲmaxが１
〜１０μｍでマイクロクラックの発生がなく、５％弗酸
溶液で洗浄したときの平均表面粗さ変化量が０．１μｍ
／時間以下、最大粗さＲmax変化量が１μｍ／時間以下
で、５％弗酸溶液で１０時間洗浄しても表面積増加率が
１００％以下の石英ガラス治具である。前記範囲の凹凸
を有することによりＳｉＨ4ガス等を用いたＣＶＤ工程
においてガス反応がガラス表面状態によって乱されるこ
とがなく、供給原料ガスに応じ反応を一定にすることが
できる。前記フロスト加工とは化学試薬を用いて石英ガ
ラス表面に凹凸を形成する加工をいう。石英ガラス治具
の平均表面粗さＲaが０．１μｍ未満では、表面が平滑
な状態になってしまいガスを使用した工程で用いた場
合、ガスまたは／およびその反応生成物の治具表面に付
着しにくく、最初に石英ガラス表面にガスまたは／およ
びその反応生成物を付着する必要があり、工程が煩雑で
コスト高となる。一方、平均表面粗さＲaが２μｍを超
えると、ガス若しくはその反応生成物が異常に付着し、
例えば反応炉内のガス反応に乱れが生じＳｉウェーハ上
の反応生成物の蒸着量のコントロールが困難となる。ま
た、最大粗さＲmaxについても前述と同様に１μｍ未満
では、ガスまたは／およびその反応生成物の予めの付着
が必要となり、最大粗さＲmaxが１０μｍを超えるとＳ
ｉウェーハ上の反応生成物の蒸着量のコントロールが困
難となる。さらに、本発明の石英ガラス治具は、顕微鏡
による目視でマイクロクラックの存在が確認できない。
そのため５％弗酸溶液で洗浄したときの平均表面粗さ変
化量が０．１μｍ／時間以下、最大粗さＲmax変化量が
１μｍ／時間以下で、５％弗酸溶液で１０時間洗浄して
も表面積増加率が１００％以下となる。このように本発
明の石英ガラス治具はマイクロクラックがないところか
らエッチング処理による表面積の増大がなく、ガス反応
を一定にコントロールすることができる。前記表面積増
加率が１００％とは、表面積が２倍になることを意味す
る。特に、表面積が大きな面の石英ガラス治具ではガス
反応に対する影響が大きく、また、Ｓｉウェーハ近傍で
使用したとき表面積の変化がＳｉウェーハ表面への反応
生成物の蒸着量を敏感に左右することになる。The quartz glass jig of the present invention is, for example, S
A jig for use in a CVD apparatus, a heat diffusion apparatus, or the like for forming an oxide film or a polycrystalline silicon film on a surface of an i-wafer by a gas reaction, the surface of which has irregularities formed by frost processing, and has an average surface roughness R a is 0.1 to 2 μm, maximum surface roughness R max is 1
No microcracks are generated at 10 to 10 μm, and the average surface roughness change when washed with a 5% hydrofluoric acid solution is 0.1 μm
This is a quartz glass jig having a maximum roughness Rmax variation of 1 μm / hour or less and a surface area increase rate of 100% or less even after washing with a 5% hydrofluoric acid solution for 10 hours. By having the irregularities in the above range, the gas reaction is not disturbed by the surface state of the glass in the CVD process using the SiH 4 gas or the like, and the reaction can be made constant according to the raw material gas. The frost process is a process of forming irregularities on the surface of quartz glass using a chemical reagent. The average surface roughness R a of the quartz glass jig is less than 0.1 [mu] m, when used at the surface using gas becomes smooth state step, the jig surface of the gas and / or reaction products thereof It is difficult to adhere, and it is necessary to attach gas and / or its reaction product to the surface of quartz glass first, which makes the process complicated and costly. On the other hand, if the average surface roughness R a of more than 2 [mu] m, gas or its reaction products are abnormally deposited,
For example, the gas reaction in the reaction furnace is disturbed, and it is difficult to control the amount of the reaction product deposited on the Si wafer. If the maximum roughness R max is less than 1 μm, gas or / and its reaction product must be previously deposited as described above, and if the maximum roughness R max exceeds 10 μm, S
It is difficult to control the amount of the reaction product deposited on the i-wafer. Furthermore, in the quartz glass jig of the present invention, the presence of microcracks cannot be confirmed visually with a microscope.
Therefore, the average surface roughness change when washed with a 5% hydrofluoric acid solution is 0.1 μm / hour or less, the maximum roughness Rmax change is 1 μm / hour or less, and the substrate is washed with a 5% hydrofluoric acid solution for 10 hours. Also, the surface area increase rate becomes 100% or less. As described above, since the quartz glass jig of the present invention has no microcracks, the surface area does not increase due to the etching process, and the gas reaction can be controlled to be constant. The surface area increase rate of 100% means that the surface area is doubled. In particular, a quartz glass jig with a large surface area has a large effect on gas reaction, and when used near a Si wafer, the change in surface area sensitively affects the deposition amount of reaction products on the Si wafer surface. Become.
【０００８】上記例は、Ｓｉウェーハ上にｐｏｌｙ−Ｓ
ｉ膜を形成する工程について説明したが、本発明の石英
ガラス治具は前記例にとどまらず、その他のＣＶＤ工
程、例えばナイトライド膜を形成する工程、酸化膜を形
成する工程でも有効に使用できる。In the above example, poly-S is formed on a Si wafer.
Although the process of forming the i-film has been described, the quartz glass jig of the present invention is not limited to the above example, and can be effectively used in other CVD processes, for example, a process of forming a nitride film and a process of forming an oxide film. .
【０００９】上記石英ガラス治具は、本発明者等が先に
提案した石英ガラス表面に石鹸、シリコーンオイル等の
有機化合物を約１０〜５０μｍの薄膜に塗布したのち、
ＨＦ溶液でエッチング処理する方法、または特開平７−
２６７６７９号公報に記載の弗化水素、フッ化アンモニ
ウム、水及び酢酸を含有する表面処理液で処理する方法
等で製造できる。前記フロスト加工法では有機化合物の
薄膜の厚さ、または弗化水素、フッ化アンモニウム、水
及び酢酸を含有する表面処理液の組成比を変えることで
任意の大きさの凹凸を容易に形成することができる。後
者の表面処理液の組成比はフッ化水素とフッ化アンモニ
ウムの合計含有量が１０重量％以上２５重量％未満、そ
のモル比がフッ化水素：フッ化アンモニウム＝０．５：
１ないし２：１、酢酸の含有量が４０重量％ないし７５
重量％からなる。この表面処理液の調製にあってはフッ
化水素、フッ化アンモニウム及び水を含有する主液と酢
酸からなる補助液を使用直前で混合するのがよい。これ
れにより調製時に液温の上昇がなく成分の揮発による処
理液組成の変動が抑えられ、安定した処理液が得られ
る。また、主液と補助液の比率が、処理によって得られ
る表面粗さにほぼ比例するという性質があるところか
ら、治具の粗面の程度に応じて処理主液と補助液を混ぜ
合わせればよく、粗面の程度を容易にコントロールでき
る。その上、処理液として使用するのに冷却を待つ必要
がなく直ちに使用ができる利点もある。前記補助液の酢
酸は９８％以上が好ましく、これによってＮＨ4ＦやＨ
Ｆの含有量を低減しても処理能力が低下することがな
い。The quartz glass jig is prepared by applying an organic compound such as soap or silicone oil to a thin film of about 10 to 50 μm on the surface of quartz glass proposed by the present inventors.
Method of etching with HF solution, or
It can be produced by a method of treating with a surface treatment solution containing hydrogen fluoride, ammonium fluoride, water and acetic acid described in Japanese Patent No. 267679. In the frost processing method, irregularities of any size can be easily formed by changing the thickness of a thin film of an organic compound or the composition ratio of a surface treatment solution containing hydrogen fluoride, ammonium fluoride, water and acetic acid. Can be. The composition ratio of the latter surface treatment liquid is such that the total content of hydrogen fluoride and ammonium fluoride is 10% by weight or more and less than 25% by weight, and the molar ratio thereof is hydrogen fluoride: ammonium fluoride = 0.5:
1: 2: 1, acetic acid content of 40% by weight to 75%
% By weight. In preparing this surface treatment solution, it is preferable to mix an auxiliary solution consisting of acetic acid and a main solution containing hydrogen fluoride, ammonium fluoride and water immediately before use. As a result, there is no increase in the liquid temperature at the time of preparation, and the fluctuation of the processing liquid composition due to the volatilization of the components is suppressed, and a stable processing liquid is obtained. In addition, since the ratio between the main liquid and the auxiliary liquid has a property of being substantially proportional to the surface roughness obtained by the processing, the processing main liquid and the auxiliary liquid may be mixed according to the degree of the rough surface of the jig. , The degree of roughness can be easily controlled. In addition, there is an advantage that it can be used immediately without having to wait for cooling before using it as a processing liquid. The acetic acid of the auxiliary liquid is preferably 98% or more, so that NH 4 F or H
Even if the content of F is reduced, the processing capacity does not decrease.
【００１０】[0010]
【発明の実施の形態】次に本発明の実施例について述べ
るがこれによって本発明はなんら限定されるものではな
い。なお、実施例および比較例の平均粗さＲaおよび最
大粗さＲmaxは、Ｓｕｒｆ−Ｃｏｍ３００Ｂ（東京精密
製）を用いて測定した結果をプロファイルカーブに描き
その中心線を基準として求めた値である。さらに、表面
積の変化量は比表面積測定器（ガス吸着法）で求めた値
である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described, but the present invention is not limited thereto. The average roughness R a and the maximum roughness R max of Examples and Comparative Examples is a value determined as a reference the center line draw a result of measuring the profile curve using Surf-Com300B (manufactured by Tokyo Seimitsu) is there. Further, the change amount of the surface area is a value obtained by a specific surface area measuring device (gas adsorption method).
【００１１】[0011]
実施例１ シリコーンオイルを石英ガラスチューブ表面に刷毛で塗
布したのち高速で回転して、余分のシリコーンオイルを
吹き飛ばし膜厚５μｍのシリコーンオイル膜を形成し
た。この石英ガラスチューブを２５％ＨＦ溶液で６０分
のエッチング処理し、図１（ａ）に示すような表面に凹
凸を有する石英ガラスチューブを得た。前記チューブの
プロファイルカーブは図１（ｂ）に示すとおりであっ
た。このプロファイルカーブから求めた平均表面粗さＲ
aは０．５μｍ、最大粗さＲmaxは２μｍであった。同チ
ューブを顕微鏡で観察したがマイクロクラックの存在が
確認できなかった。前記石英ガラスチューブを５％ＨＦ
で１０時間エッチング処理したのち走査電子顕微鏡で観
察したところ、図２（ａ）に示す表面凹凸であり、その
プロファイルカーブは図２（ｂ）に示すとおりであっ
た。前記プロファイルカーブから平均表面粗さＲaおよ
び最大粗さＲmaxを求めたところ、それぞれＲaは０．８
μｍ、Ｒmaxは４μｍであり、表面積の変化率は約１０
％であった。この石英ガラスチューブを用いてＳｉウェ
ーハ上にＳｉＨ4を原料とし、６００℃のＣＶＤ工程で
ｐｏｌｙＳｉ膜を１０μｍ蒸着し、それを弗化水素酸と
硝酸との混合液でエッチングしたが、表面積には大きな
変化がなかった。そこで、さらにＳｉＨ4を原料とする
ＣＶＤ工程でＰｏｌｙＳｉ膜をＳｉウェーハ上に形成し
たところ、蒸着速度に変化がみられなかった。なお、前
記ＰｏｌｙＳｉ膜の蒸着膜厚はエリプソメーターで測定
した。Example 1 Silicone oil was applied to the surface of a quartz glass tube with a brush, and then rotated at high speed to blow off excess silicone oil to form a 5 μm-thick silicone oil film. This quartz glass tube was etched with a 25% HF solution for 60 minutes to obtain a quartz glass tube having an uneven surface as shown in FIG. The profile curve of the tube was as shown in FIG. Average surface roughness R obtained from this profile curve
a was 0.5 μm and the maximum roughness R max was 2 μm. The tube was observed with a microscope, but no microcracks could be confirmed. 5% HF in the quartz glass tube
After etching for 10 hours, the surface was observed with a scanning electron microscope. As a result, the surface was uneven as shown in FIG. 2A, and the profile curve was as shown in FIG. 2B. When the average surface roughness Ra and the maximum roughness Rmax were obtained from the profile curve, Ra was 0.8
μm and R max are 4 μm, and the change rate of the surface area is about 10 μm.
%Met. Using this quartz glass tube, SiH 4 was used as a raw material on a Si wafer, and a polySi film was deposited in a thickness of 10 μm in a CVD process at 600 ° C., and was etched with a mixed solution of hydrofluoric acid and nitric acid. There were no major changes. Then, when a PolySi film was formed on a Si wafer by a CVD process using SiH 4 as a raw material, no change was observed in the deposition rate. The thickness of the deposited PolySi film was measured by an ellipsometer.
【００１２】比較例１ 石英ガラスチューブ表面に粒径２５０μｍのグリーンカ
ーボン粒子を吹き付け石英ガラスチューブ表面を凹凸を
形成した。得られた石英ガラスチューブの表面は図３
（ａ）のとおりであり、そのプロファイルカーブは図３
（ｂ）に示すとおりであった。そして前記図３（ｂ）か
ら求めた平均表面粗さＲaは２μｍ、最大粗さＲmaxは１
０μｍであった。顕微鏡による観察ではマイクロクラッ
クが多数確認された。前記石英ガラスチューブを５％Ｈ
Ｆで１０時間エッチング処理したところ、石英ガラスチ
ューブの表面は図４（ａ）のとおり大きな凹凸に変化
し、表面積の変化率は約３００％であることが確認され
た。また、そのプロファイルカーブは図４（ｂ）に示す
とおりであり、それから求めた平均粗さＲaは５μｍ、
最大粗さＲmaxは５０μｍであった。この石英ガラスチ
ューブを用いてＳｉウェーハ上にＳｉＨ4を原料とし
て、６００℃のＣＶＤ工程でｐｏｌｙＳｉ膜を１０μｍ
蒸着したのち、弗化水素酸と硝酸との混合液でエッチン
グしたところ、表面積が大きく変化していた。さらにＳ
ｉＨ4を原料として、６００℃のＣＶＤ工程でＰｏｌｙ
Ｓｉ膜をＳｉウェーハ上に形成したところ、ＰｏｌｙＳ
ｉ膜の蒸着速度は遅く、かつ石英ガラスチューブ表面に
異常にＰｏｌｙＳｉ膜が付着していた。Comparative Example 1 Green carbon particles having a particle size of 250 μm were sprayed on the surface of a quartz glass tube to form irregularities on the surface of the quartz glass tube. The surface of the obtained quartz glass tube is shown in FIG.
(A), and the profile curve is shown in FIG.
(B). The average surface roughness R a was determined from FIG. 3 (b) 2 [mu] m, the maximum roughness R max 1
It was 0 μm. Microscopic observation revealed many microcracks. 5% H
After etching for 10 hours with F, the surface of the quartz glass tube was changed into large irregularities as shown in FIG. 4A, and it was confirmed that the rate of change of the surface area was about 300%. Further, the profile curve is as shown in FIG. 4 (b), the average roughness R a is 5μm determined therefrom,
The maximum roughness R max was 50 μm. Using this quartz glass tube, a polySi film having a thickness of 10 μm was formed on a Si wafer by a CVD process at 600 ° C. using SiH 4 as a raw material.
After vapor deposition, etching was performed with a mixed solution of hydrofluoric acid and nitric acid, and the surface area was greatly changed. Further S
Using iH 4 as a raw material in a CVD process at 600 ° C.
When a Si film was formed on a Si wafer, PolyS
The deposition rate of the i-film was slow, and the PolySi film was abnormally attached to the surface of the quartz glass tube.
【００１３】[0013]
【発明の効果】本発明の半導体熱処理装置用石英ガラス
治具は、表面に微細な凹凸を有し、しかもマイクロクラ
ックに基づく表面積の増加がなく、半導体素子上のｐｏ
ｌｙＳｉ膜の形成やドープ材の熱拡散等のガス反応を安
定に行うことができる石英ガラス治具である。前記石英
ガラス治具を用いることで、高品質のＳｉウェーハ等の
製造を容易にする。The quartz glass jig for a semiconductor heat treatment apparatus according to the present invention has fine irregularities on its surface, does not have an increase in surface area due to microcracks, and has a low po surface on a semiconductor element.
This is a quartz glass jig that can stably perform gas reactions such as formation of a lySi film and thermal diffusion of a doping material. The use of the quartz glass jig facilitates the production of high quality Si wafers and the like.
【図１】本発明の石英ガラス治具表面のエッチング処理
前の走査電子顕微鏡写真（ａ）およびそのプロフィルカ
ーブ（ｂ）である。FIG. 1 is a scanning electron micrograph (a) and a profile curve (b) of the surface of a quartz glass jig of the present invention before etching treatment.
【図２】本発明の石英ガラス治具表面のエッチング処理
後の走査電子顕微鏡写真（ａ）およびそのプロフィルカ
ーブ（ｂ）である。FIGS. 2A and 2B are a scanning electron micrograph (a) and a profile curve (b) of the surface of the quartz glass jig of the present invention after the etching treatment.
【図３】サンドブラスト処理した石英ガラス治具表面の
エッチング処理前の走査電子顕微鏡写真（ａ）およびそ
のプロフィルカーブ（ｂ）である。FIGS. 3A and 3B are a scanning electron micrograph (a) and a profile curve (b) of the surface of a quartz glass jig subjected to sandblasting before etching treatment.
【図４】サンドブラスト処理した石英ガラス治具表面の
エッチング処理後の走査電子顕微鏡写真（ａ）およびそ
の表面のプロフィルカーブ（ｂ）である。FIGS. 4A and 4B are a scanning electron micrograph (a) and a profile curve (b) of the surface of a quartz glass jig subjected to sandblasting after an etching process.
Claims (3)
面が平均表面粗さＲa０．１〜２μｍ、最大粗さＲmax１
〜１０μｍにフロスト加工され、かつマイクロクラック
がなく、５％弗酸溶液で洗浄したときの平均表面粗さの
変化量が０．１μｍ／時間以下、最大粗さＲmaxの変化
量が１μｍ／時間以下、表面積増加率が１００％以下で
あることを特徴とする半導体熱処理装置用石英ガラス治
具。1. A jig made of quartz glass, the average surface a surface roughness R a 0.1-2 .mu.m, the maximum roughness R max 1
10 μm to 10 μm, no microcracks, no change in average surface roughness of 0.1 μm / hour or less when washed with 5% hydrofluoric acid solution, and change in maximum roughness R max of 1 μm / hour Hereinafter, a quartz glass jig for a semiconductor heat treatment apparatus, wherein a surface area increase rate is 100% or less.
形成する雰囲気中で使用することを特徴とする請求項１
記載の半導体熱処理装置用石英ガラス治具。2. The method according to claim 1, wherein the gas source is used in an atmosphere in which a thin film is formed.
A quartz glass jig for a semiconductor heat treatment apparatus as described in the above.
ることを特徴とする請求項２記載の半導体熱処理装置用
石英ガラス治具。3. The quartz glass jig for a semiconductor heat treatment apparatus according to claim 2, wherein the gas reaction is a poly-Si film forming reaction.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31457797A JPH11130451A (en) | 1997-10-31 | 1997-10-31 | Quartz glass jig for semiconductor heat treatment equipment |
| TW086118251A TW438731B (en) | 1997-09-30 | 1997-12-04 | Quartz glass jig for semiconductor heat treatment apparatus and a method of producing thereof |
| KR1019970071442A KR100304338B1 (en) | 1997-09-30 | 1997-12-20 | Quartz glass jig for heat-treating semiconductor, and process for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31457797A JPH11130451A (en) | 1997-10-31 | 1997-10-31 | Quartz glass jig for semiconductor heat treatment equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11130451A true JPH11130451A (en) | 1999-05-18 |
Family
ID=18054974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31457797A Pending JPH11130451A (en) | 1997-09-30 | 1997-10-31 | Quartz glass jig for semiconductor heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11130451A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1193327A1 (en) * | 2000-09-28 | 2002-04-03 | Heraeus Quarzglas GmbH & Co. KG | Silica glass apparatus for semiconductor industry and method for producing the same |
| JP2002104843A (en) * | 2000-09-28 | 2002-04-10 | Shinetsu Quartz Prod Co Ltd | Silica glass jig for semiconductor industry and manufacturing method thereof |
| US6706205B2 (en) * | 1999-06-28 | 2004-03-16 | General Electric Company | Semiconductor processing article |
| WO2004051724A1 (en) * | 2002-12-03 | 2004-06-17 | Shin-Etsu Quartz Products Co., Ltd. | Silica glass jig used in process for manufacturing semiconductor and method of manufacturing silica glass jig |
| JP2009260061A (en) * | 2008-04-17 | 2009-11-05 | Dainippon Screen Mfg Co Ltd | Method of producing quartz window and thermal treatment device |
| CN111606573A (en) * | 2019-02-26 | 2020-09-01 | Ａｇｃ株式会社 | Glass substrate with concave-convex shape and method for producing the same |
-
1997
- 1997-10-31 JP JP31457797A patent/JPH11130451A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6706205B2 (en) * | 1999-06-28 | 2004-03-16 | General Electric Company | Semiconductor processing article |
| EP1193327A1 (en) * | 2000-09-28 | 2002-04-03 | Heraeus Quarzglas GmbH & Co. KG | Silica glass apparatus for semiconductor industry and method for producing the same |
| JP2002104843A (en) * | 2000-09-28 | 2002-04-10 | Shinetsu Quartz Prod Co Ltd | Silica glass jig for semiconductor industry and manufacturing method thereof |
| WO2004051724A1 (en) * | 2002-12-03 | 2004-06-17 | Shin-Etsu Quartz Products Co., Ltd. | Silica glass jig used in process for manufacturing semiconductor and method of manufacturing silica glass jig |
| JP2009260061A (en) * | 2008-04-17 | 2009-11-05 | Dainippon Screen Mfg Co Ltd | Method of producing quartz window and thermal treatment device |
| CN111606573A (en) * | 2019-02-26 | 2020-09-01 | Ａｇｃ株式会社 | Glass substrate with concave-convex shape and method for producing the same |
| CN111606573B (en) * | 2019-02-26 | 2023-11-10 | Ａｇｃ株式会社 | Glass substrate with concave-convex shape and manufacturing method thereof |
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