JPH11160391A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize cost reduction of the burn-in test of a semiconductor device which is formed of a semiconductor element including a circuit main body of multi power supplies and mounted on a tape carrier. SOLUTION: A semiconductor element 1 forming a semiconductor device is provided with a circuit main body 16 and a testing circuit 15 including switches 17, 18 and 19 of PMOS transistors, an inverter 20, voltage dividing resistors 22, 23 and a pull-up resistor 21. The number of power supplies to the circuit main body 16 is three, i.e., a voltage supplied from a VDD power supply terminal 11, a voltage supplied from a VSS power supply terminal 14, and a voltage supplied from a VCC power supply terminal 24, which are similar to a multi power supply circuits in response to the functions of the circuit main body 16. An input terminal 9 and an output terminal 10 of the semiconductor element 1, the VDD power supply terminal 11, the VSS power supply terminal 14, the VCC power supply terminal 24, and a testing terminal 12 are connected with leads and pads of the semiconductor device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device,
In particular, the present invention relates to a semiconductor device configured by providing an energizing circuit for a function test to a semiconductor element mounted by a tape carrier method.

[0002]

2. Description of the Related Art For a semiconductor device in a conventional semiconductor device, a function test is performed on the semiconductor device immediately after manufacturing to eliminate an initial defective product. A burn-in test is performed to remove a defective product by energizing the device for a certain period of time after manufacturing. Usually, in the burn-in test, the occurrence of defects that appear with time at high temperatures is often accelerated.

[0003] In general, in a semiconductor device which is a subject of the present invention, a plurality of semiconductor devices are mounted on one tape and mounted by a so-called tape carrier system.
The circuit body included in the component semiconductor element is a semiconductor integrated circuit mainly having a function as a driver,
Therefore, while having a function to cope with a high withstand voltage, the power supply of the control system and the power supply of the driver system are congested, and have a property as a so-called multiple power supply element.
When the burn-in test is performed on a semiconductor element including such a circuit body, it is necessary to energize each semiconductor element at the same time, but there are many circuit bodies in the corresponding semiconductor element. Since the power supply is used as the power supply, there is a difficult problem in executing the burn-in test with respect to supplying the power for the burn-in test to each semiconductor element in common.

[0004] As described above, when a burn-in test is performed on a semiconductor element, generally, a current is applied to each semiconductor element at the same time. Power supply line is provided. FIGS. 1, 4 and 5 show conventional examples.
1 shows a partial plan view showing an external configuration of a semiconductor device disclosed in Japanese Patent Application Laid-Open No. 06-310578, and a circuit configuration diagram of first and second semiconductor elements included in the semiconductor device. . In this conventional example,
A plurality of device holes 3 are arrayed and formed at the center in the width direction of the tape carrier 1 formed by the long film, and a large number of sprocket holes 4 are arrayed on both sides of the tape carrier 2. ing. On one side of the tape carrier 2, leads 5 and pads 6 are formed by a conductive film such as a copper foil so as to face the device hole 3. Similarly, along both sides of the tape carrier 2,
A burn-in test V _DD line 7 and a V _SS line 8 are extended. The semiconductor element 1 is mounted in each of the device holes 3. This semiconductor element 1
Although not shown, is mounted by a method of bonding a bump provided on an electrode to the lead 5, for example.

FIG. 4 shows a circuit configuration of a first semiconductor element in this conventional semiconductor device. The circuit body 16
This is an original function circuit of the semiconductor element 1. In FIG.
The semiconductor element 1 includes a circuit body 16 corresponding to the input terminal 9, the output terminal 10, the burn-in test _VDD power terminal 13, the _VDD power terminal 11, and the testing terminal 12,
A switch 29 formed by a PMOS transistor;
A testing circuit 15 including an inverter 30 and a pull-up resistor 31 is provided. The input terminal 9, output terminal 10, _VDD power supply terminal 11, and testing terminal 12 are connected to the lead 5 and the pad 6 shown in FIG. 1, respectively.

When a function test is performed on the semiconductor device, a function test of each semiconductor element 1 mounted on the tape carrier 2 is performed independently. That is,
In FIG. 4, when the testing terminal 12 is set to “L” level, the PMOS transistor forming the switch 29 via the inverter 31 is turned off, and the circuit body 16 is disconnected from the burn-in test _VDD power supply terminal 13. Separated. In this state, the V _DD power supply terminal 11 and V _DD
By receiving the input of the power supply voltage supplied from the _SS power supply terminal 14 and connecting the input terminal 9 and the output terminal 10 to an external test device using the pad 6, the function test of the semiconductor element 1 can be performed. , In a state independent of other semiconductor elements. If a defective product is found in the semiconductor device 1 as a result of the function test, the semiconductor device 1
Is mechanically punched out of the tape carrier 2 and removed.

When a burn-in test is performed on a semiconductor device 1 which has become a non-defective product as a result of the above function test, V _DD
A predetermined voltage is applied to the burn-in test _VDD line 7 and the _VSS line 8 without applying a voltage to the power supply terminal 11. At the same time, the "H" level of the pull-up resistor 31 is applied to the inverter 30 and the "L" level of the output is received at the gate, and the switch 29 is turned on.
The state becomes the N state. As a result, the burn-in test power supply voltage supplied from the burn-in test _VDD power supply terminal 13 is supplied to the circuit body 16, and the burn-in test of the circuit body 16 is performed together with other semiconductor elements.

Therefore, in this semiconductor device, at the time of a function test, an "L" level signal is input to the testing terminal 12 and the circuit body 16 is connected to the burn-in test V _DD.
It is possible to perform an independent test by disconnecting from the line 7. At the time of the burn-in test, by inputting an “H” level signal to the testing terminal 12,
A burn-in test V _DD line 7 is connected to all the semiconductor elements on the tape carrier 2 and is commonly energized to perform a burn-in test.

FIG. 5 shows a second example of the present semiconductor device.
FIG. 3 is a diagram showing a circuit configuration of the semiconductor element of FIG. In FIG. 5, the semiconductor device 1 includes an input terminal 9, an output terminal 10,
V _DD power terminal 13 for burn-in test, V _DD power terminal 11
And in response to V _SS power supply terminal 14, the circuit body 16,
And a testing circuit 12 including a diode 32. The input terminal 9, output terminal 10, _VDD power supply terminal 11, and testing terminal 12 are connected to the lead 5 and the pad 6 shown in FIG. 1, respectively.

When performing a function test on this semiconductor device, a predetermined power supply voltage is supplied to the _VDD power supply terminal 11 of the semiconductor element 1 to be subjected to the function test, and the _VDD power supply terminal 13 for the part-in test is connected. V _DD for berth line
The line 7, than the voltage value that is supplied to the V _DD power supply terminal 11, a low voltage by V _F voltage of the diode 32 is applied. As a result, a reverse bias voltage is applied to the diode 32 and the diode 32 is turned off, and the circuit body 16 of the semiconductor element 1 is disconnected from the berth line _VDD line 7. As a result, the semiconductor elements mounted on the tape carrier 2 are individually separated, and by connecting the input terminal 9 and the output terminal 10 to an external test device via the pad 6, The function test of the device 1 is performed independently of other semiconductor devices. As a result of this functional test,
When a defective product is found in the semiconductor element 1, the semiconductor element 1 is mechanically punched out of the tape carrier 2 and removed.

When a burn-in test is performed on a semiconductor device 1 which is a non-defective product as a result of the above function test, V _DD
A predetermined voltage is applied to the _VDD line 7 and the _VSS line 8 for the per-in test without applying a voltage to the power supply terminal 11. As a result, the diode 32 is turned on,
The circuit body 16 includes a V _DD power supply terminal 13 for burn-in test.
A more predetermined burn-in test voltage is applied. In this case, a voltage is simultaneously applied to the circuit bodies of all the semiconductor elements on the tape carrier 2, and a burn-in test is performed for each semiconductor element.

As described above, in the case of the circuit body 16 of the semiconductor device 1 in FIGS. 4 and 5, the power to the circuit body 16 is applied from the _VDD power supply terminal 11 and the _VSS power supply terminal 14. Although only the power source is provided, the type of power source supplied to the circuit body 16 increases,
As described at the beginning, a difficult problem occurs during the burn-in test.

[0013]

In the semiconductor device mounted by the conventional tape carrier system described above,
The circuit body of the semiconductor element forming the semiconductor device is a semiconductor integrated circuit mainly having a function as a driver, and thus has a function as a high withstand voltage, and the power supply of the control system and the power supply of the driver system are congested. And has the property of a so-called multiple power supply element. When performing the burn-in test on a semiconductor element including such a multi-power-supply circuit body, it is necessary to energize each semiconductor element at the same time. Since each circuit body is a multi-power circuit element, it is extremely difficult to supply power for the burn-in test to each semiconductor element in common and at the same time. Has the drawback that the required man-hours increase and cause obstacles in cost.

[0014]

According to a first aspect of the present invention, a semiconductor device is formed by mounting a plurality of semiconductor elements on a tape carrier, and includes a power supply line for simultaneously performing a burn-in test on the plurality of semiconductor elements. The plurality of semiconductor elements are each configured to have a circuit main body having a unique basic function, and a power supply voltage from a plurality of power supply voltage sources supplied and applied in response to execution of a function test and a burn-in test of the circuit main body. In a semiconductor device including at least test control means for performing switching control, during a burn-in test, a voltage is applied from a burn-in test _VDD power supply terminal of the semiconductor element and supplied to a first power supply terminal of the circuit body. that burn-in test power supply voltage, and is applied to the V _SS power supply terminal of the semiconductor element, a second power supply terminal of the circuit body At least one or more resistive voltage dividers that function to supply a voltage generated by resistance division of the burn-in test power supply voltage to the circuit body together with a power supply voltage supplied to the circuit main body A circuit, switch means for switching a supply path of the power supply voltage at the time of the function test to a supply path of the power supply voltage at the time of the burn-in test, and power supply voltage switching means for generating and outputting a switch control signal for controlling on / off of the switch means Is provided at least in the test control means.

In the first invention, the power supply voltage switching means may include a burn-in test V of the semiconductor element.
By receiving the power supply voltage applied from _DD power supply terminal and the V _SS power supply terminal, and inverts the level signal is set to the testing terminals of the semiconductor device, an inverter for outputting a predetermined switch control signal, the burn A pull-up resistor inserted and connected between the test _VDD power supply terminal and the input terminal of the inverter,
Further, the switch means is provided with the burn-in test V _DD.
First switch means inserted and connected between a power supply terminal and a first power supply terminal of the circuit main body and controlled to be turned on and off by the switch control signal;
Second switch means inserted and connected between the _DD power supply terminal and a terminal on the high potential side of the resistance voltage dividing circuit and controlled to be turned on / off by the switch control signal; and a voltage dividing point of the resistance voltage dividing circuit. And a third switch means which is inserted and connected between the power supply terminal and a third power supply terminal of the circuit body, and is turned on / off by the switch control signal.

Further, the resistance voltage dividing circuit includes a first voltage dividing circuit connected between the second switch means and the _VSS power supply terminal.
And the second resistor, the first and second resistors
May be connected to a third power supply terminal of the circuit body, the first switch means having a source connected to the burn-in test _VDD power supply terminal. , A gate is connected to the output terminal of the inverter, and a drain is constituted by a first PMOS transistor connected to a first power supply terminal of the circuit body. A second PMOS transistor connected to the burn-in test _VDD power supply terminal, a gate connected to the output terminal of the inverter, and a drain connected to a high-potential terminal of the resistance dividing circuit; The third switch has a source connected to a voltage dividing point of the resistance dividing circuit, a gate connected to an output terminal of the inverter, and a drain connected to the circuit main body. It may be formed by a third PMOS transistor connected to the second power supply terminal.

The semiconductor device of the second invention is formed by mounting a plurality of semiconductor elements on a tape carrier, and includes a power supply line for simultaneously performing a burn-in test on the plurality of semiconductor elements. A circuit in which a plurality of semiconductor elements each have a unique basic function, and a test for switching and controlling a power supply voltage from a plurality of power supply voltage sources supplied and applied in response to the function test and burn-in test of the circuit body And a test control means, wherein the test control means has an anode side connected to a burn-in test _VDD power supply terminal of the semiconductor device, and a cathode side connected to a first power supply terminal of the circuit body. a first diode that is, a V _DD power supply terminal for the burn-in test, insert contact between the second power supply terminal of the semiconductor element A voltage dividing point having a voltage dividing point connected to a third power supply terminal of the circuit main body, an anode side being connected to a voltage dividing point of the resistance voltage dividing circuit, and a cathode side being connected to a third power supply of the circuit main body. And a second diode connected to the terminal. At the time of a functional test, the second diode for the burn-in test is compared with a predetermined power supply voltage applied to a first power supply terminal of the circuit body. Suppressing the power supply voltage applied to the V _DD power supply terminal to a low potential, setting the first and second diodes to an off state,
During burn-in test, the first stops supplying the predetermined power supply voltage to the power terminal applies a burn-in test V _DD supply voltage of the normal from the burn-in test V _DD power supply terminal, said first and The second diode is set to an ON state.

[0018]

Next, the present invention will be described with reference to the drawings.

FIG. 1 is a plan view showing an outline of the configuration of an embodiment of the present invention. The configuration itself is the same as FIG. 1 described above, and has already been described. The main feature of the present invention is that, in the structure, a semiconductor device capable of eliminating a conventional cost obstacle factor in a burn-in test of a semiconductor device formed by a semiconductor element including a circuit body of multiple power supplies. Is to make it happen. Although the description of FIG. 1 is duplicated, a plurality of device holes 3 are arranged and formed in the center portion in the width direction of the tape carrier 2 formed of a long film. Has a large number of sprocket holes 4 arranged therein. A lead 5 and a pad 6 are formed on one surface of the tape carrier 2 by a conductive film such as a copper foil so as to face the device hole 3. Similarly, along the both ends of the tape carrier 2, a burn-in test is performed. V _DD line 7 and V _SS line 8 has been laid. The semiconductor elements 1 are individually mounted on the device holes 3 described above.

FIG. 2 is a diagram showing a circuit configuration of one embodiment of the semiconductor element in the semiconductor device of the first invention. As shown in FIG. 2, the semiconductor device 1 of the present embodiment has an input terminal 9, an output terminal 10, a burn-in test _VDD power terminal 13, a _VDD power terminal 11, a _VSS power terminal 14, and a _VCC power terminal. A testing circuit 15 including a circuit body 16 and switches 17, 18 and 19 formed by PMOS transistors, an inverter 20, voltage dividing resistors 22 and 23, and a pull-up resistor 21 corresponding to the testing terminal 24 and the testing terminal 12. And is provided. The number of power supplies supplied to the circuit body 16 included in the semiconductor device 1 of the present embodiment depends on the _VDD power supply terminal 11, the _VSS power supply terminal 1,
4 and _Vcc power supply terminals 24, each of which includes three types of power supplies. Input terminal 9, output terminal 10, _VDD power supply terminal 11, and testing terminal 12
Are connected to the leads 5 and the pads 6 shown in FIG. 1, respectively.

When a function test is performed on this semiconductor device, a function test of each semiconductor element 1 mounted on the tape carrier 2 is performed independently. That is,
In FIG. 2, when the testing terminal 12 is set to the “L” level, the switch 17
18 and 19 are all turned off, and the circuit body 16
Is separated from the voltage dividing point of the burn-in test _VDD power supply terminal 13 and the voltage dividing resistors 22 and 23. In this state, the semiconductor element 1 is separated from all other semiconductor elements mounted on the tape carrier 2 and becomes independent, and the _VDD power supply terminal 11 and the _VSS power supply
In response to the power supply voltage supplied from the power supply terminal 24 and the V _CC power supply terminal 24, the function test of the semiconductor device 1 alone is performed.

When the burn-in test is performed, a predetermined voltage is applied to the burn-in test _VDD line 7 and the _VSS line 8. At the same time, the tasting terminal 12
Is in the open state, the “H” level by the pull-up resistor 21 is applied to the inverter 20 of FIG. 2, and the “L” level of the output is received by the gate, and the switch 17 is turned on.
18 and 19 are all in the ON state. Thus, together with the burn-in test power supply voltage supplied from the burn-in test for V _DD power supply terminal 13 is supplied to the circuit body 16, and a power supply voltage for the burn-in test, V _SS power supply terminal 1
4 is applied to the circuit main body 16 as a substitute power supply voltage from the V _CC power supply terminal. In this manner, the burn-in test is performed on the semiconductor element 1. In this embodiment, the V _DD power supply terminal 11 and the V _CC power supply
No power supply voltage is supplied from the power supply terminal 24,
Burn power supply voltage of the test power supply voltage and V _SS power supply terminal 14 is only supplied applied. That is, although the circuit body 16 is a multi-power supply circuit, the burn-in test power supply voltage applied from the burn-in test _VDD power supply terminal 13 and the V _SS power supply Is merely applied. That is, in response to the above problem associated with the multiple power supply circuit,
5. A semiconductor device including a circuit body of a multi-power supply by providing a resistance dividing circuit inside and performing an alternative function to supply of a power supply voltage from a multi-power supply by dividing an applied burn-in test voltage. , A burn-in test can be easily executed.

FIG. 3 is a diagram showing a circuit configuration of one embodiment of the semiconductor element in the semiconductor device of the second invention. In FIG. 3, the semiconductor element 1 has a circuit corresponding to an input terminal 9, an output terminal 10, a burn-in test _VDD power terminal 13, a _VDD power terminal 11, a _VSS power terminal 14, and a _VCC power terminal 24. Body 16 and diodes 25 and 2
6, and a testing circuit 15 including voltage dividing resistors 27 and 28. The input terminal 9, the output terminal 10, and the _VDD power supply terminal 11 are connected to the lead 5 and the pad 6 shown in FIG. 1, respectively.

When performing a function test on the semiconductor device, a power supply voltage is supplied to the _VDD power supply terminal 11 of the semiconductor element 1 to be subjected to the function test, and the power supply voltage is supplied to the power supply terminal to which the _VDD power supply terminal 13 for the part-in test is connected. the in-test V _DD line 7, than the voltage value of the normal supplied to V _DD power supply terminal 11, a low voltage by V _F voltage of the diode 26 is applied. Thus, the diode 26 in a state where reverse bias voltage is applied to OFF, also, the potential difference between the voltage of the burn-in test power supply voltage and V _SS power supply terminal 14, by the voltage dividing resistors 27 and voltage dividing resistors 28 resistance division voltage, than the voltage value supplied from the V _CC power is set to be V _F voltage of only low voltage of the diode 25. As a result, the diode 25 is also turned off in a state where the reverse bias voltage is applied, and the circuit body 16 in the semiconductor element 1 is disconnected from the voltage dividing point of the burn-in test _VDD power supply terminal 13 and the voltage dividing resistors 27 and 28. Separated. In this state, the semiconductor element 1 is separated from all other semiconductor elements mounted on the tape carrier 2 and becomes an independent state, and the input terminal 9 and the output terminal 10 are connected to the external via the pad 6. By connecting to the test equipment, _VDD power supply terminal 11 and _VSS power supply terminal 1
4 receives the power supply voltage supplied from the semiconductor device 1.
A single functional test is performed. As a result of this functional test,
When a defective product is found in the semiconductor element 1, the semiconductor element 1 is mechanically punched out of the tape carrier 2 and removed.

When a burn-in test is performed on the semiconductor element 1 which has become a non-defective product as a result of the above function test, V _DD
A predetermined burn-in test power supply voltage is applied to the burn-in test _VDD power supply terminal 13 without applying a voltage to each of the power supply terminal 11 and the V _CC power supply terminal 25. And 26 are both turned on, the burn-in test power supply voltage from the burn-in test _VDD power supply terminal 13 is applied to the circuit body 16, and the voltage divided by the voltage dividing resistors 27 and 28 is V _The burn-in test is performed by supplying the voltage corresponding to the _CC power supply voltage to the circuit body 16.
In this case, a voltage is simultaneously applied to the circuit bodies of all the semiconductor elements on the tape carrier 2, and a burn-in test is performed for each semiconductor element.

That is, in this embodiment of the semiconductor element in the semiconductor device of the second invention, similarly to the case of the first invention, a resistance dividing circuit is provided inside the tisting circuit 15 to apply a burn-in voltage. By dividing the test voltage, a burn-in test can be easily performed on a semiconductor device including a circuit body with multiple power supplies.

[0027]

As described above, the present invention is applicable to a multi-power-supply circuit body in a semiconductor device forming a semiconductor device, and at the time of a function test of the semiconductor device, a predetermined switch means is used. By shutting off the supply path of the power supply voltage for the burn-in test and the related voltage source to the circuit main body, it is possible to perform a function test of the semiconductor element itself, and at the time of the burn-in test, The power supply voltage for the burn-in test and the supply path of the related voltage source to the circuit body are all made conductive, and the burn-in test V _DD
In addition to the power supply voltage for the burn-in test applied from the power supply terminal, a divided voltage obtained by dividing the voltage for the burn-in test by resistance is supplied to the circuit body as an alternative to the multiple power supply voltage, so that the circuit body of the multiple power supply is provided. There is an effect that the burn-in test of the semiconductor device including the above can be easily executed at low cost.

[Brief description of the drawings]

FIG. 1 is an external plan view of an embodiment of the present invention.

FIG. 2 is a circuit configuration diagram showing one embodiment of a semiconductor element in the semiconductor device of the first invention corresponding to the embodiment.

FIG. 3 is a circuit configuration diagram showing one embodiment of a semiconductor element in a semiconductor device of a second invention corresponding to the embodiment.

FIG. 4 is a circuit configuration diagram showing a semiconductor element in a conventional example.

FIG. 5 is a circuit configuration diagram showing a semiconductor element in another conventional example.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Tape carrier 3 Device hole 4 Sprocket hole 5 Lead 6 pad 7 V _DD line for burn-in test 8 V _SS line 9 Input terminal 10 Output terminal 11 V _DD power supply terminal 12 Testing terminal 13 V _DD power supply terminal for burn-in test 14 V _SS power supply terminal 15 Testing circuit 16 Circuit body 17, 18, 19, 29 Switch 20, 30 Inverter 21, 31 Pull-up resistor 22, 23, 27, 28 Voltage dividing resistor 24 V _CC power supply terminal 25, 26, 32 diode

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/66 H01L 21/66 H

Claims (6)

[Claims] 1. A power supply line for mounting a plurality of semiconductor elements on a tape carrier and simultaneously performing a burn-in test on the plurality of semiconductor elements, wherein each of the plurality of semiconductor elements has its own A circuit main body having a basic function, and at least test control means for switching and controlling power supply voltages from a plurality of power supply voltage sources supplied and applied in response to execution of a function test and a burn-in test of the circuit main body. A burn-in test power supply voltage applied from a burn-in test _VDD power supply terminal of the semiconductor element and supplied to a first power supply terminal of the circuit body during a burn-in test;
And a power supply voltage applied to a _Vss power supply terminal of the semiconductor element and supplied to a second power supply terminal of the circuit main body, and a voltage generated by resistance division of the burn-in test power supply voltage, As a substitute voltage, at least one or more resistive voltage dividing circuits functioning to supply the circuit main body, switch means for switching a power supply voltage supply path during a function test to a power supply voltage supply path during a burn-in test, And a power supply voltage switching means for generating and outputting a switch control signal for controlling on / off of the switch means, at least in the test control means. Wherein said power supply voltage switching means, said supplied with semiconductor burn-in test for V _DD power source terminal and the V _SS supply voltage applied from the power supply terminal of the device, it is set to testing terminals of the semiconductor element And a pull-up resistor inserted and connected between the burn-in test _VDD power supply terminal and the input terminal of the inverter. The semiconductor device according to claim 1, wherein: 3. The switch means is inserted and connected between the burn-in test _VDD power supply terminal and a first power supply terminal of the circuit main body, and is turned on and off by the switch control signal.
A first switch means which is controlled to be turned off, and is inserted and connected between the burn-in test _VDD power supply terminal and a terminal on the high potential side of the resistance voltage dividing circuit, and is turned on / off by the switch control signal. A second switch means, a third switch means inserted and connected between a voltage dividing point of the resistance voltage dividing circuit and a third power supply terminal of the circuit body, and being turned on and off by the switch control signal; The semiconductor device according to claim 1, further comprising: 4. The resistor voltage dividing circuit is formed by first and second resistors connected between the second switch means and the _VSS power supply terminal, and the first and second resistors are connected to each other. 4. The semiconductor device according to claim 1, wherein a voltage division point corresponding to the connection point is connected to a third power supply terminal of the circuit body. 5. The first switch means has a source connected to the burn-in test _VDD power supply terminal, a gate connected to the output terminal of the inverter, and a drain connected to the first power supply terminal of the circuit body. First PMOS connected to
The second switch means includes a source connected to the burn-in test _VDD power supply terminal, a gate connected to the output terminal of the inverter, and a drain connected to a high potential side of the resistance dividing circuit. A second PMOS transistor connected to a terminal, wherein the third switch means has a source connected to a voltage dividing point of the resistance dividing circuit, a gate connected to an output terminal of the inverter, and a drain connected to 5. The semiconductor device according to claim 3, further comprising a third PMOS transistor connected to a second power supply terminal of the circuit body. 6. A power supply line formed by mounting a plurality of semiconductor elements on a tape carrier and simultaneously performing a burn-in test on the plurality of semiconductor elements, wherein each of the plurality of semiconductor elements has its own A circuit main body having a basic function, and at least test control means for switching and controlling power supply voltages from a plurality of power supply voltage sources supplied and applied in response to execution of a function test and a burn-in test of the circuit main body. A semiconductor device, wherein the test control means includes: a first diode having an anode connected to a burn-in test _VDD power supply terminal of the semiconductor device and a cathode connected to a first power supply terminal of the circuit body; burn the test V _DD power supply terminal, is inserted and connected between the second power supply terminal of the semiconductor element, a voltage dividing point the circuit present A resistor divider coupled to the third power supply terminal, the anode side is connected to the voltage dividing point of the resistance voltage dividing circuit, the second the cathode side is connected to a third power supply terminal of the circuit body
And a power supply applied to the burn-in test _VDD power supply terminal in comparison with a predetermined power supply voltage applied to a first power supply terminal of the circuit body during a function test. The voltage is suppressed to a low potential, the first and second diodes are set to an off state, and during a burn-in test, the supply of a predetermined power supply voltage to the first power supply terminal is stopped. A normal burn-in test V _DD power supply voltage from a power supply V _DD power supply terminal to turn on the first and second diodes.