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JPH11186439A - Substrate for semiconductor package and its manufacture - Google Patents

Substrate for semiconductor package and its manufacture

Info

Publication number
JPH11186439A
JPH11186439A JP35286797A JP35286797A JPH11186439A JP H11186439 A JPH11186439 A JP H11186439A JP 35286797 A JP35286797 A JP 35286797A JP 35286797 A JP35286797 A JP 35286797A JP H11186439 A JPH11186439 A JP H11186439A
Authority
JP
Japan
Prior art keywords
circuit board
external connection
semiconductor package
forming
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP35286797A
Other languages
Japanese (ja)
Other versions
JP3850967B2 (en
Inventor
Yoshihiro Ishida
芳弘 石田
Kiyoshi Shimizu
潔 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP35286797A priority Critical patent/JP3850967B2/en
Priority to TW087120893A priority patent/TW421980B/en
Priority to US09/216,932 priority patent/US6219912B1/en
Priority to KR1019980056724A priority patent/KR100589530B1/en
Publication of JPH11186439A publication Critical patent/JPH11186439A/en
Priority to US09/569,310 priority patent/US6324068B1/en
Application granted granted Critical
Publication of JP3850967B2 publication Critical patent/JP3850967B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve position precision of an outer terminal against the outer form of a package, by forming an aligning pattern becoming a reference in a dicing process and an outer connection electrode deciding the outer diameter and the position of the outer terminal with same members and the same processes. SOLUTION: A cut aligning mark 11 formed of solder resist exists outside a product. An outer connection electrode 4a whose outer form and the position are decided by solder resist exists on a copper pattern of a product-side. When the outer diameter of the copper pattern is larger than the opening diameter of the opening part of solder resist, the cut aligning mark 11 is formed of solder resist deciding the outer diameter and the position of the outer connection electrode 4a. Thus, the position precision of the electrode against the outer form of the product improves. Consequently, the semiconductor package superior in the loading ability of the semiconductor package to a mother board and productivity is provided.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体パッケージの
製造方法に係わり、更に詳しくは外部接続用の突起電極
を有する半導体パッケージの製造方法に関するものであ
る。
The present invention relates to a method of manufacturing a semiconductor package, and more particularly to a method of manufacturing a semiconductor package having a projection electrode for external connection.

【0002】[0002]

【従来の技術】近年、半導体パッケージの小型化、高密
度化に伴いベア・チップを直接フェイスダウンで、基板
上に実装するフリップチップボンディングが開発されて
いる。カメラ一体型VTRや携帯電話機等の登場によ
り、ベア・チップと略同じ寸法の小型パッケージ、所謂
CSP(チップサイズ/スケール・パッケージ)を載せ
た携帯機器が相次いで登場してきている。最近CSPの
開発は急速に進み、その市場要求が本格化している。
2. Description of the Related Art In recent years, with the miniaturization and high density of semiconductor packages, flip chip bonding has been developed in which bare chips are directly mounted face down on a substrate. With the advent of camera-integrated VTRs and mobile phones, portable devices equipped with a small package having substantially the same dimensions as a bare chip, that is, a so-called CSP (chip size / scale package) are appearing one after another. Recently, CSP development has progressed rapidly, and the market demand has been in full swing.

【0003】図6は、多数個取りし、高密度実装化した
従来技術が特開平8−153819号公報に開示されて
いる。以下図面に基づいてその概要を説明する。
FIG. 6 shows a prior art in which a large number of pieces are taken and high-density mounting is carried out in JP-A-8-153819. The outline will be described below with reference to the drawings.

【0004】図6において、短冊状の回路基板1にスル
ーホール2を形成後、銅メッキ層を施す工程と、全ての
回路パターンと接続する共通電極14を含む複数個、例
えば2個のBGAを構成する回路パターンを形成する回
路パターン形成工程と、前記回路基板1の上下両面に感
光性樹脂皮膜を施した後、エッチングにより、共通電極
14及びICチップ、ボンディングワイヤ、半田バンプ
の各接続部を除くようにドライフイルムを形成するドラ
イフイルムラミネート工程と、前記共通電極14を利用
して前記回路基板1の上下両面の露出している電極の銅
メッキ層の表面に、Ni−Auメッキ層を形成する。
In FIG. 6, after a through hole 2 is formed in a strip-shaped circuit board 1, a copper plating layer is applied, and a plurality of, for example, two BGAs including a common electrode 14 connected to all circuit patterns are formed. A circuit pattern forming step of forming a circuit pattern to be formed, and after applying a photosensitive resin film on the upper and lower surfaces of the circuit board 1, the common electrode 14 and the respective connection portions of the IC chip, bonding wires, and solder bumps are etched. A dry film laminating step of forming a dry film so as to remove, and forming a Ni—Au plated layer on the surfaces of the copper plated layers of the exposed electrodes on the upper and lower surfaces of the circuit board 1 using the common electrode 14. I do.

【0005】次に、共通電極14と回路パターンとを分
離するパターン分離工程は、製品分離ライン15の四辺
に沿って、その四隅に回路基板1と連結する連結部15
aを残すように、ルータ加工により長穴16を穴明けす
る。その後、ワイヤーボンディング及びトランスファー
モールドにより樹脂封止し、回路基板1の下面に半田バ
ンプを形成する。
Next, a pattern separating step for separating the common electrode 14 from the circuit pattern is performed along four sides of the product separation line 15 at the four corners of the connecting portion 15 for connecting to the circuit board 1.
A long hole 16 is made by router processing so as to leave a. Thereafter, resin sealing is performed by wire bonding and transfer molding, and solder bumps are formed on the lower surface of the circuit board 1.

【0006】製品分離工程は、前記四隅に残した連結部
は狭隘なため、プレス抜き等の切り離し手段で余分な負
荷をかけることなく極めて容易に分離することにより、
単個のBGAを製造することができる。
[0006] In the product separation step, since the connection portions left at the four corners are narrow, separation can be performed very easily by a separation means such as a press without applying an extra load.
A single BGA can be manufactured.

【0007】しかしながら、前述した短冊状の複数個取
りする半導体パッケージの製造方法は、単個の半導体パ
ッケージの製造方法に比較して生産性は若干向上する
が、小型パッケージであるCSPにおいては、回路基板
製造時の基板取り個数が少なく、生産コストが高くな
る。また、前記CSPのように、前記回路基板の外縁か
ら最外周に位置するボール電極の中心までの距離が差が
無くなると、製品分離工程でプレス抜き等の切り離し手
段で分離する時の金型押さえ代が無くなる等の問題があ
った。
However, the above-described method of manufacturing a semiconductor package in which a plurality of strip-shaped semiconductor packages are obtained has a slight improvement in productivity as compared with the method of manufacturing a single semiconductor package. The number of substrates to be manufactured at the time of substrate manufacture is small, and the production cost is increased. Further, when the distance from the outer edge of the circuit board to the center of the ball electrode located at the outermost periphery is eliminated as in the case of the CSP, when the mold is separated by a separation means such as a press punch in a product separation process, the die is pressed. There was a problem that the bill was lost.

【0008】そこで、小型携帯機器等に搭載するCSP
の従来の半導体パッケージの製造方法について以下その
概要を説明する。
Therefore, a CSP mounted on a small portable device or the like
An outline of the conventional semiconductor package manufacturing method will be described below.

【0009】図3は半導体用パッケージ基板製造工程で
ある。両面銅張りされた集合回路基板1Aにスルーホー
ル21を形成した後、無電解銅メッキ及び電解銅メッキ
により銅メッキ層22を形成し、スルーホールを樹脂な
どの穴埋め材23で穴埋めし、エッチングレジストをラ
ミネートし、露光現像してパターンマスクを形成した
後、エッチング液を用いてパターンエッチングを行うこ
とにより、前記集合回路基板1Aの上面側には複数個分
配列したIC接続用電極3、下面側にパッド電極である
外部接続用電極4を形成する。次にソルダーレジスト処
理を行い、所定の部分にレジスト膜を形成することによ
り、前記集合回路基板1Aの下面側には外部接続用電極
4を露呈するよう形成し、更に露出したIC接続用電極
3及び外部接続用電極4上に金メッキを行い、多数個取
りする集合回路基板1Aが完成される。
FIG. 3 shows a semiconductor package substrate manufacturing process. After a through hole 21 is formed in the collective circuit board 1A covered with copper on both sides, a copper plating layer 22 is formed by electroless copper plating and electrolytic copper plating, and the through hole is filled with a filling material 23 such as a resin. Are laminated and exposed and developed to form a pattern mask, and then pattern etching is performed using an etching solution, whereby a plurality of IC connection electrodes 3 arranged on the upper surface side of the collective circuit board 1A, the lower surface side Next, an external connection electrode 4 which is a pad electrode is formed. Next, a solder resist process is performed to form a resist film on a predetermined portion, so that the external connection electrode 4 is formed on the lower surface side of the collective circuit board 1A so as to be exposed, and the exposed IC connection electrode 3 is further formed. Then, gold plating is performed on the external connection electrodes 4 to complete the collective circuit board 1A in which a large number of pieces are taken.

【0010】図4(a)は図3詳細を説明した多数個取
りする回路基板形成工程であり、集合回路基板1Aの上
面側に複数個分配列したIC接続用電極3、下面側にマ
トリックス状に多数の同一形状の半田付け可能な外部接
続用電極4を形成してある。2はX、Y方向に直交する
カットラインである。
FIG. 4 (a) is a circuit board forming step for forming a large number of circuit boards as described in detail in FIG. Are formed with a large number of solderable external connection electrodes 4 of the same shape. 2 is a cut line orthogonal to the X and Y directions.

【0011】図4(b)に示すICチップ実装工程は、
先ず、ICウエハーをバンプ工程に流して前記ICウエ
ハーのパッド電極面に半田バンプ5を形成する。前記半
田バンプ5の形成方法には、一般に、スタッドバンプ方
式、ボールバンプ方式、及びメッキバンプ方式等がある
が、その中で、パッド電極位置にレジストにて窓を形成
し半田浴槽中に浸漬してメッキにて半田バンプを形成す
るメッキバンプ方式は、パッド電極間の狭い配列でバン
プを形成することが可能で、ICチップの小型化には有
効な半田バンプの形成手段である。
The IC chip mounting step shown in FIG.
First, a solder bump 5 is formed on a pad electrode surface of the IC wafer by flowing the IC wafer to a bump process. The method of forming the solder bumps 5 is generally a stud bump method, a ball bump method, a plating bump method, etc. Among them, a window is formed with a resist at a pad electrode position and immersed in a solder bath. The plating bump method of forming solder bumps by plating can form bumps in a narrow arrangement between pad electrodes, and is an effective means of forming solder bumps for miniaturizing IC chips.

【0012】前記半田バンプ5を形成後、前記ICウエ
ハーを粘着テープ等で貼着した状態で、所定のチップサ
イズにダイシングソー等の装置でウエハーの厚みをフル
カット方式でX、Y方向に切断した後、ICチップ6を
単体に分割する。
After the solder bumps 5 are formed, the thickness of the wafer is cut in the X and Y directions by a full-cut method with a device such as a dicing saw to a predetermined chip size while the IC wafer is adhered with an adhesive tape or the like. After that, the IC chip 6 is divided into single pieces.

【0013】前記半田バンプ付きICチップ6、又は前
述した集合回路基板1Aの前記配線バターンの所定位置
にフラックスを塗布して、単体に分割した前記ICチッ
プ6を1個づつ複数個分配列した集合回路基板1Aの個
々の回路基板1上の所定位置に搭載した後、半田リフロ
ー工程を経て、フリップチップ実装を行う。
A flux is applied to the IC chip 6 with solder bumps or a predetermined position of the wiring pattern of the above-mentioned collective circuit board 1A, and a plurality of the IC chips 6 divided into single pieces are arranged one by one. After being mounted at a predetermined position on each circuit board 1 of the circuit board 1A, flip-chip mounting is performed through a solder reflow process.

【0014】図4(c)に示す封止工程は、熱硬化性の
封止樹脂7で前記隣接する複数個のICチップ5に跨が
った状態で、サイドポッティングにより一体的に樹脂封
止することにより、ICチップ6はフェイスダウンで集
合回路基板1Aの個々の回路基板1上に固定される。
In the sealing step shown in FIG. 4C, the resin is integrally sealed by side potting with the thermosetting sealing resin 7 straddling the plurality of adjacent IC chips 5. By doing so, the IC chip 6 is fixed face down on the individual circuit boards 1 of the collective circuit board 1A.

【0015】さらに、ICチップ6を実装した集合回路
基板1Aの下面側に形成された外部接続用電極4の位置
に、半田ボールを配置してリフローすることによりボー
ル電極9を形成する。
Further, a ball electrode 9 is formed by arranging and reflowing solder balls at the positions of the external connection electrodes 4 formed on the lower surface side of the integrated circuit board 1A on which the IC chip 6 is mounted.

【0016】図5(a)に示す基準部材張り付け工程
は、ICチップ6を実装した集合回路基板1Aの下面側
に形成された外部接続用電極4を、基準部材8上に接着
剤又は粘着テープ等の固定手段で張り付ける。
In the reference member attaching step shown in FIG. 5A, the external connection electrode 4 formed on the lower surface side of the integrated circuit board 1A on which the IC chip 6 is mounted is attached to the reference member 8 with an adhesive or an adhesive tape. Attach with fixing means such as.

【0017】図5(b)は、タイシング工程で、前述の
X、Y方向のカットライン2に沿って、ダイシングソー
等の切削手段で、図7(a)示すような集合回路基板1
Aの下面側に形成された切削用目合わせマーク11を基
準に、単個に切削、分割した後、熱等により基準部材8
より剥離する。
FIG. 5 (b) shows a tying step, in which cutting means such as a dicing saw is used along the above-mentioned cut line 2 in the X and Y directions, and the collective circuit board 1 as shown in FIG.
A is individually cut and divided based on the cutting registration mark 11 formed on the lower surface side of A, and the reference member 8 is heated or the like.
More peel off.

【0018】図7(a)は、集合回路基板1Aの下面側
の平面図であり、製品内に外部接続用電極4製品外に切
削用目合わせマーク11が形成されている。
FIG. 7A is a plan view of the lower surface side of the collective circuit board 1A. The external connection electrode 4 is formed inside the product, and the cutting alignment mark 11 is formed outside the product.

【0019】図7(b)は、図7(a)の切削用目合わ
せマーク11のE−E‘断面図であり、銅パターンによ
り形成されている。
FIG. 7B is a sectional view taken along the line EE 'of the cutting registration mark 11 of FIG. 7A, and is formed by a copper pattern.

【0020】図7(c)は、図7(a)の外部接続用電
極4のF−F‘断面図であり、銅パターン上に形成され
たソルダーレジストにより形成されている。つまり、外
部接続用電極4aは銅パターンによってその表面が形成
されるが、電極の外径、位置はソルダーレジストの開口
部によって決定されている。
FIG. 7C is a cross-sectional view of the external connection electrode 4 taken along line FF ′ of FIG. 7A, which is formed by a solder resist formed on a copper pattern. That is, the surface of the external connection electrode 4a is formed by the copper pattern, and the outer diameter and position of the electrode are determined by the opening of the solder resist.

【0021】[0021]

【発明が解決しようとする課題】しかしながら、前述し
た半導体パッケージの製造方法には次のような問題点が
ある。即ち、ダイシング工程で基準となる切削用目合わ
せパターンと外部接続用電極が同一でないため、単個に
切削、分割されたとき、製品の外形基準でみた外部端子
の位置精度が悪い等の問題があった。即ち、切削用目合
わせパターンは銅パターンによってその外径と位置が決
まるのに対し、外部接続用電極の外径と位置は銅パター
ンではなく、ソルダーレジストの開口部によって決まる
ので、両者の位置を完全に一致させるのは難しかった。
However, the above-described method for manufacturing a semiconductor package has the following problems. That is, since the cutting registration pattern and the external connection electrode which are the reference in the dicing process are not the same, when cut and divided into single pieces, problems such as poor positional accuracy of the external terminals based on the external shape of the product occur. there were. In other words, the outer diameter and position of the cutting registration pattern are determined by the copper pattern, whereas the outer diameter and position of the external connection electrode are not determined by the copper pattern but by the opening of the solder resist. It was difficult to make a perfect match.

【0022】製品の外形基準でみた外部端子の位置精度
は、切削用目合わせパターンを形成する銅パターンに対
する外部接続用電極を形成するソルダーの位置公差±1
00ミクロンとダイシング公差±50ミクロンを合わせ
た±150ミクロンとなる。
The positional accuracy of the external terminals with reference to the external shape of the product is determined by the positional tolerance of the solder forming the external connection electrode with respect to the copper pattern forming the cutting alignment pattern ± 1.
It becomes ± 150 microns, which is the sum of 00 microns and dicing tolerance ± 50 microns.

【0023】本発明は、上記従来の課題に鑑みなされた
ものであり、その目的は、小型携帯機器等に搭載する外
形基準に対する外部端子の位置精度の良い半導体用基板
及び半導体パッケージを提供するものである。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and has as its object to provide a semiconductor substrate and a semiconductor package in which external terminals have high positional accuracy with respect to an external standard mounted on a small portable device or the like. It is.

【0024】[0024]

【課題を解決するための手段】上記目的を達成するため
に、本発明は、ICチップ実装用のボンディングパター
ンと外部接続用電極を形成するための電極パターンとを
集合回路基板面に複数個分配列して形成した回路基板
に、複数のICチップを電気的に接続し、該ICチップ
を樹脂封止したパッケージ集合体を切削して単個の完成
半導体パッケージを形成する半導体パッケージ用基板に
おいて、前記パッケージ集合体の回路基板は、切削位置
を示す位置合わせパターンを有しており、該位置合わせ
パターンは外部接続電極の構成部材と同一部材で構成さ
れていることを特徴とするものである。
In order to achieve the above object, the present invention provides a bonding circuit for mounting an IC chip and an electrode pattern for forming electrodes for external connection on a surface of a collective circuit board. In a semiconductor package substrate, a plurality of IC chips are electrically connected to an arrayed circuit board, and a package assembly in which the IC chips are sealed with a resin is cut to form a single completed semiconductor package. The circuit board of the package assembly has a positioning pattern indicating a cutting position, and the positioning pattern is formed of the same member as a constituent member of the external connection electrode.

【0025】また、一方の面に設けられたICチップ実
装用のボンディングパターンと、他方の面に設けられた
外部接続用電極を形成するための電極パターンとを集合
回路基板面に複数個分配列して形成する回路基板形成工
程と、前記ボンディングパターンにICチップを電気的
に接続するICチップ実装工程と、該ICチップを樹脂
封止してパッケージ集合体を形成する封止工程と、該パ
ッケージ集合体のICチップ実装面側を基準部材に固定
する保持工程と、保持されたパッケージ集合体の回路基
板に切削位置である位置合わせパターンを形成する位置
合わせパターン形成工程と、前記位置合わせパターンに
基づいて前記回路基板を切削して単個の完成半導体パッ
ケージを形成する切削工程とからなる半導体パッケージ
用基板において、前記位置合わせパターンは前記回路基
板形成工程で形成される外部接続電極の構成部材と同一
部材で、且つ同一工程で形成されていることを特徴とす
るものである。
Also, a plurality of bonding patterns for mounting an IC chip provided on one surface and an electrode pattern for forming external connection electrodes provided on the other surface are arranged on the surface of the collective circuit board. Forming a circuit board, forming an integrated circuit by electrically connecting an IC chip to the bonding pattern, sealing the IC chip with a resin to form a package assembly, A holding step of fixing the IC chip mounting surface side of the assembly to the reference member, an alignment pattern forming step of forming an alignment pattern that is a cutting position on the held circuit board of the package assembly, and And a cutting step of cutting the circuit board on the basis of to form a single completed semiconductor package. Serial alignment pattern is characterized in that the configuration same members as those of the external connection electrodes formed at the circuit board forming process, and is and formed in the same step.

【0026】また、前記外部接続電極の構成部材が電極
パターンと同じ金属配線部材であることを特徴とするも
のである。
Further, the constituent member of the external connection electrode is the same metal wiring member as the electrode pattern.

【0027】また、前記外部接続電極の構成部材が電極
パターンを部分的に覆って外部接続電極の位置を規制す
るソルダーレジストであることを特徴とするものであ
る。
Further, the constituent member of the external connection electrode is a solder resist which partially covers the electrode pattern and regulates the position of the external connection electrode.

【0028】また、前記切削工程は、ダイシングソーに
よる切削で行うことを特徴とするものである。
Further, the cutting step is performed by cutting with a dicing saw.

【0029】[0029]

【発明の実施の形態】以下図面に基づいて本発明におけ
る半導体パッケージ用基板及びその製造方法について説
明する。図1及び図2は本発明の実施の形態で、半導体
パッケージ用基板の説明図である。図3は半導体用パッ
ケージ基板の製造工程を示す説明図である。図4及び図
5は突起電極付きの半導体パッケージの製造工程を示す
説明図である。従来技術と同一部材は同一符号で示す。
DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor package substrate and a method of manufacturing the same according to the present invention will be described below with reference to the drawings. 1 and 2 are explanatory views of a semiconductor package substrate according to an embodiment of the present invention. FIG. 3 is an explanatory view showing a manufacturing process of the semiconductor package substrate. 4 and 5 are explanatory views showing the steps of manufacturing a semiconductor package with a bump electrode. The same members as those in the prior art are denoted by the same reference numerals.

【0030】先ず、図3は半導体パッケージ用基板形成
工程の説明図であるが、前述の従来技術と同様であるの
で、説明は省略する。
First, FIG. 3 is an explanatory view of a process for forming a substrate for a semiconductor package. However, the description is omitted because it is the same as the above-mentioned prior art.

【0031】図1(a)は、本発明の半導体用パッケー
ジ基板を示す平面図である。製品外部にソルダーレジス
トで形成された切削用目合わせマーク11がある。製品
側の銅パターン上には、ソルダーレジストによって外径
と位置が決定された外部接続用電極4bがある。即ち本
実施形態では、銅パターンの外径がソルダーレジスト開
口部の開口径より大きい場合を示しており、切削用目合
わせマーク11が外部接続用電極4bの外径と位置を決
定するソルダーレジストによって形成されているので、
製品外形に対する電極の位置精度が良くなるものであ
る。
FIG. 1A is a plan view showing a semiconductor package substrate according to the present invention. There is a cutting alignment mark 11 formed of a solder resist outside the product. On the copper pattern on the product side, there is an external connection electrode 4b whose outer diameter and position are determined by the solder resist. That is, the present embodiment shows a case where the outer diameter of the copper pattern is larger than the opening diameter of the solder resist opening, and the cutting registration mark 11 is formed by the solder resist that determines the outer diameter and the position of the external connection electrode 4b. Because it is formed,
This improves the positional accuracy of the electrodes with respect to the outer shape of the product.

【0032】図1(b)は図1(a)のA−A‘断面図
である。
FIG. 1B is a sectional view taken along the line AA ′ of FIG.

【0033】図1(c)は図1(a)のB−B‘断面図
である。
FIG. 1C is a sectional view taken along the line BB 'of FIG. 1A.

【0034】図2(a)は、本発明の半導体用パッケー
ジ基板のもう一つの例である。製品外部に、銅パターンで
形成された切削用目合わせマーク11がある。製品側の
ソルダーレジストを開口した部分には、銅パターンで形
成した外部接続用電極4bがある。本実施の形態では、
銅パターンの外径がソルダーレジスト開口部の開口径よ
り小さい場合を示しており、切削用目合わせマーク11
が、外部接続用電極4bの外径と位置を決定する銅パタ
ーンで構成されているので、製品外形に対する電極の位
置精度が良くなるものである。
FIG. 2A shows another example of the semiconductor package substrate of the present invention. Outside the product, there is a cutting alignment mark 11 formed of a copper pattern. An external connection electrode 4b formed of a copper pattern is provided in a portion where the solder resist on the product side is opened. In the present embodiment,
The case where the outer diameter of the copper pattern is smaller than the opening diameter of the solder resist opening is shown.
However, since it is composed of a copper pattern that determines the outer diameter and position of the external connection electrode 4b, the positional accuracy of the electrode with respect to the outer shape of the product is improved.

【0035】図2(b)は図2(a)のC−C‘断面図
である。
FIG. 2B is a sectional view taken along the line CC 'of FIG. 2A.

【0036】図2(c)は図2(a)のD−D‘断面図
である。
FIG. 2C is a sectional view taken along the line DD ′ of FIG. 2A.

【0037】図4(a)の回路基板形成工程、図4
(b)のIC実装工程、図4(c)の樹脂封止工程は、
前述の従来技術と同様であるので、説明は省略する。
FIG. 4A shows a circuit board forming step, and FIG.
The IC mounting process of FIG. 4B and the resin sealing process of FIG.
The description is omitted because it is similar to the above-described conventional technology.

【0038】図5(a)に示す基準部材張り付け工程
は、ボール電極9a及び半田ボール突起部9bを基準部
材8に接着剤、例えば、日東電工(株)製の熱剥離テー
プ「エレップホルダー感圧型ダイシングテープ、SPV
−224」等の固定手段により張りつけることで、基準
部材8上に固定する。
In the reference member attaching step shown in FIG. 5A, the ball electrode 9a and the solder ball protrusion 9b are bonded to the reference member 8 with an adhesive, for example, a heat-peeling tape manufactured by Nitto Denko Corporation, "Elep Holder Sensing". Compression dicing tape, SPV
-224 "or the like, and is fixed on the reference member 8.

【0039】図2(d)はタイシング工程で、前述の
X、Y方向のカットライン2に沿って、ダイシングソ
ー、例えば、ディスコ製のダイシング機「DFD−64
0」、使用ブレード「NBC−ZB1090S3、0.
1mm幅」等を使用した切削手段で製品外部にソルダー
レジストで形成された切削用目合わせマーク11を基準
にして、単個に切削、分割した後、熱により前述剥離テ
ープの接着力を低下させた後、基準部材8より剥離す
る。以上の工程により単個のフリップチップBGA10
が完成される。
FIG. 2 (d) shows a dicing process along a dicing saw, for example, a dicing machine "DFD-64" along the cut line 2 in the X and Y directions.
0 ", the blade used" NBC-ZB1090S3, 0.
After cutting and dividing into single pieces with reference to the cutting registration mark 11 formed of a solder resist on the outside of the product by a cutting means using "1 mm width" or the like, the adhesive force of the peeling tape is reduced by heat. Then, it is peeled off from the reference member 8. Through the above steps, a single flip chip BGA10
Is completed.

【0040】[0040]

【発明の効果】以上説明したように、本発明の半導体パ
ッケージ基板を使った半導体パッケージでは、ダイシン
グ工程で基準となる目合わせパターンと外部端子パター
ンの外径と位置を決定する外部接続電極の構成部材とを
同一部材、同一工程で形成したので、パッケージ外形に
対する外部端子の位置精度が良く、半導体パッケージの
マザーボードへの搭載性及び生産性の優れた半導体パッ
ケージを提供することが可能である。
As described above, in the semiconductor package using the semiconductor package substrate of the present invention, the configuration of the external connection electrode for determining the outer diameter and the position of the alignment pattern and the external terminal pattern to be a reference in the dicing process. Since the members and the members are formed in the same member and in the same process, it is possible to provide a semiconductor package in which the positional accuracy of the external terminals with respect to the package outer shape is good, and the semiconductor package has excellent mountability and productivity on a motherboard.

【0041】製品の外形基準でみた外部端子の位置精度
は、切削用目合わせパターンと外部接続用電極を形成す
る工程が同じなため、銅パターンまたはソルダーレジス
トの位置公差±10ミクロンとダイシング公差±50ミ
クロンを合わせた±60ミクロンとなる。
The positional accuracy of the external terminals based on the external shape of the product is as follows. Since the process of forming the cutting registration pattern and the external connection electrode is the same, the positional tolerance of the copper pattern or the solder resist is ± 10 μm and the dicing tolerance is ± 10 μm. The sum of 50 microns is ± 60 microns.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態に係わる半導体用基板の説
明図である。
FIG. 1 is an explanatory view of a semiconductor substrate according to an embodiment of the present invention.

【図2】本発明の実施の形態に係わる半導体用基板の別
の説明図である。
FIG. 2 is another explanatory view of the semiconductor substrate according to the embodiment of the present invention.

【図3】半導体用基板の製造工程を示す説明図である。FIG. 3 is an explanatory view showing a manufacturing process of the semiconductor substrate.

【図4】BGA半導体パッケージの製造工程で、回路基
板形成工程、IC実装工程、樹脂封止工程を示す説明図
である。
FIG. 4 is an explanatory view showing a circuit board forming step, an IC mounting step, and a resin sealing step in a manufacturing process of the BGA semiconductor package.

【図5】BGA半導体パッケージの製造工程で、回路基
板形成工程、IC実装工程、樹脂封止工程を示す説明図
である。
FIG. 5 is an explanatory view showing a circuit board forming step, an IC mounting step, and a resin sealing step in a manufacturing process of the BGA semiconductor package.

【図6】従来の短冊状のBGAの平面図である。FIG. 6 is a plan view of a conventional strip-shaped BGA.

【図7】従来の半導体用基板の説明図である。FIG. 7 is an explanatory view of a conventional semiconductor substrate.

【符号の説明】[Explanation of symbols]

1 回路基板 1A 集合回路基板 2 カットライン 3 IC接続用電極 4a 外部接続用電極 4b 突起形成パッド 5 半田ボール 6 ICチップ 7 封止樹脂 8 基準部材 9 ボール電極(突起電極) 10 フリップチップBGA 11 切削用目合わせパターン DESCRIPTION OF SYMBOLS 1 Circuit board 1A Assembly circuit board 2 Cut line 3 IC connection electrode 4a External connection electrode 4b Projection forming pad 5 Solder ball 6 IC chip 7 Sealing resin 8 Reference member 9 Ball electrode (projection electrode) 10 Flip chip BGA 11 Cutting Eye matching pattern

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 ICチップ実装用のボンディングパター
ンと外部接続用電極を形成するための電極パターンとを
集合回路基板面に複数個分配列して形成した回路基板
に、複数のICチップを電気的に接続し、該ICチップ
を樹脂封止したパッケージ集合体を切削して単個の完成
半導体パッケージを形成する半導体パッケージ用基板に
おいて、前記パッケージ集合体の回路基板は、切削位置
を示す位置合わせパターンを有しており、該位置合わせ
パターンは外部接続電極の構成部材と同一部材で構成さ
れていることを特徴とする半導体パッケージ用基板。
A plurality of IC chips are electrically connected to a circuit board formed by arranging a plurality of bonding patterns for mounting IC chips and electrode patterns for forming external connection electrodes on a surface of a collective circuit board. A package assembly in which the IC chip is resin-sealed to form a single completed semiconductor package by cutting the package assembly, wherein the circuit board of the package assembly has an alignment pattern indicating a cutting position. Wherein the alignment pattern is formed of the same member as a constituent member of the external connection electrode.
【請求項2】 一方の面に設けられたICチップ実装用
のボンディングパターンと、他方の面に設けられた外部
接続用電極を形成するための電極パターンとを集合回路
基板面に複数個分配列して形成する回路基板形成工程
と、前記ボンディングパターンにICチップを電気的に
接続するICチップ実装工程と、該ICチップを樹脂封
止してパッケージ集合体を形成する封止工程と、該パッ
ケージ集合体のICチップ実装面側を基準部材に固定す
る保持工程と、保持されたパッケージ集合体の回路基板
に切削位置である位置合わせパターンを形成する位置合
わせパターン形成工程と、前記位置合わせパターンに基
づいて前記回路基板を切削して単個の完成半導体パッケ
ージを形成する切削工程とからなる半導体パッケージ用
基板において、前記位置合わせパターンは前記回路基板
形成工程で形成される外部接続電極の構成部材と同一部
材で、且つ同一工程で形成されていることを特徴とする
半導体パッケージ用基板の製造方法。
2. A plurality of bonding patterns for mounting an IC chip provided on one surface and electrode patterns for forming external connection electrodes provided on the other surface are arranged on the collective circuit board surface. Forming a circuit board, forming an integrated circuit by electrically connecting an IC chip to the bonding pattern, sealing the IC chip with a resin to form a package assembly, A holding step of fixing the IC chip mounting surface side of the assembly to the reference member, an alignment pattern forming step of forming an alignment pattern that is a cutting position on the held circuit board of the package assembly, and A step of cutting the circuit board to form a single completed semiconductor package based on the semiconductor substrate. A method of manufacturing a substrate for a semiconductor package, wherein the alignment pattern is formed of the same member as the constituent member of the external connection electrode formed in the circuit board forming step, and is formed in the same step.
【請求項3】 前記外部接続電極の構成部材が電極パタ
ーンと同じ金属配線部材であることを特徴とする請求項
2記載の半導体パッケージ用基板の製造法。
3. The method for manufacturing a semiconductor package substrate according to claim 2, wherein the constituent members of the external connection electrodes are the same metal wiring members as the electrode patterns.
【請求項4】 前記外部接続電極の構成部材が電極パタ
ーンを部分的に覆って外部接続電極の位置を規制するソ
ルダーレジストであることを特徴とする請求項1記載の
半導体パッケージ用基板。
4. The semiconductor package substrate according to claim 1, wherein the constituent member of the external connection electrode is a solder resist that partially covers the electrode pattern and regulates the position of the external connection electrode.
【請求項5】 前記切削工程は、ダイシングソーによる
切削で行うことを特徴とする請求項2記載の半導体パッ
ケージ用基板の製造方法。
5. The method according to claim 2, wherein the cutting step is performed by cutting with a dicing saw.
JP35286797A 1997-12-22 1997-12-22 Semiconductor package substrate and manufacturing method thereof Expired - Fee Related JP3850967B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP35286797A JP3850967B2 (en) 1997-12-22 1997-12-22 Semiconductor package substrate and manufacturing method thereof
TW087120893A TW421980B (en) 1997-12-22 1998-12-16 Electronic component device, its manufacturing process, and collective circuits
US09/216,932 US6219912B1 (en) 1997-12-22 1998-12-21 Method for manufacture electronic component device
KR1019980056724A KR100589530B1 (en) 1997-12-22 1998-12-21 Electronic component device, method for manufacture of same, and aggregated circuit board
US09/569,310 US6324068B1 (en) 1997-12-22 2000-05-11 Electronic component device, and main board for circuit boards

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35286797A JP3850967B2 (en) 1997-12-22 1997-12-22 Semiconductor package substrate and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH11186439A true JPH11186439A (en) 1999-07-09
JP3850967B2 JP3850967B2 (en) 2006-11-29

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ID=18426995

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Country Link
JP (1) JP3850967B2 (en)

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