JPH11232642A - Manufacturing method of magnetic disk - Google Patents
Manufacturing method of magnetic diskInfo
- Publication number
- JPH11232642A JPH11232642A JP3265498A JP3265498A JPH11232642A JP H11232642 A JPH11232642 A JP H11232642A JP 3265498 A JP3265498 A JP 3265498A JP 3265498 A JP3265498 A JP 3265498A JP H11232642 A JPH11232642 A JP H11232642A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- disk
- manufacturing
- magnetic
- magnetic disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 11
- 230000003068 static effect Effects 0.000 claims description 10
- 239000000314 lubricant Substances 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 15
- 239000010408 film Substances 0.000 description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 9
- 238000003379 elimination reaction Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000008030 elimination Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- -1 Z r Inorganic materials 0.000 description 3
- 150000001721 carbon Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910018104 Ni-P Inorganic materials 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 229910018536 Ni—P Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
(57)【要約】
【課題】製造工程で発生する微小な異物を基板表面から
効率よく除去可能な磁気ディスクの製造方法を提供す
る。
【解決手段】ディスク表面をクリーニングする工程を有
する磁気記録媒体の製造方法において、テープクリーニ
ングの後にロールスクラブによる洗浄を行うことを特徴
とする磁気ディスクの製造方法。(57) Abstract: A method of manufacturing a magnetic disk capable of efficiently removing minute foreign matter generated in a manufacturing process from a substrate surface. In a method of manufacturing a magnetic recording medium having a step of cleaning the surface of a disk, a method of manufacturing a magnetic disk, wherein cleaning by a roll scrub is performed after tape cleaning.
Description
【0001】[0001]
【発明の属する技術分野】本発明は磁気ディスクの製造
に係り、特に成膜後のテープクリーニングで発生する研
磨粉、テープクリーニング後の残存物・付着物を効率よ
く除去し磁気ディスクを歩留りよく製造する方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of a magnetic disk, and more particularly to a method of manufacturing a magnetic disk with a good yield by efficiently removing abrasive powder generated during tape cleaning after film formation, and residues and deposits after tape cleaning. On how to do it.
【0002】[0002]
【従来の技術】磁気ディスクの製造は異物やゴミを大変
嫌うため、製造工程に表面を洗浄したり異常突起を除去
するクリーニング工程があるのが通常である。具体的に
は、テキスチャー処理後の研磨砥粒や削りかす除去のた
めのクリーニング工程、電気分解後の電解液除去のため
のクリーニング工程、炭素質保護膜形成後に行われる微
小突起を除去するクリーニング処理等を挙げることがで
きる。クリーニングの方法には、超純水によるシャワー
リング、浸漬洗浄、回転するディスク表面に研磨粒子を
担持した(或いは担持しない)テープを接触させる方法
等が広く用いられている。2. Description of the Related Art In the manufacture of magnetic disks, foreign substances and dust are very reluctant. Therefore, the manufacturing process usually includes a cleaning step of cleaning the surface and removing abnormal projections. Specifically, a cleaning process for removing abrasive grains and shavings after the texturing process, a cleaning process for removing the electrolytic solution after the electrolysis, and a cleaning process for removing fine protrusions performed after the formation of the carbonaceous protective film. And the like. As a cleaning method, a method of showering with ultrapure water, immersion cleaning, a method of bringing a tape carrying (or not carrying) abrasive particles into contact with a rotating disk surface, and the like are widely used.
【0003】[0003]
【発明が解決しようとする課題】このようなクリーニン
グ処理において異物や突起は、洗浄液とともに流れる、
テープに絡まる、ディスクの回転により飛ばされる等に
よってディスク表面から除去される。しかし、磁気ディ
スクの高記録密度化に従い、除去される(すべき)異物
の大きさも非常に小さくなり、ディスク表面からスムー
スに離れずに付着するようになってきている。この現象
は特にディスクを回転させながら行うテープクリーニン
グ、中でも炭素質保護膜表面のクリーニング処理時に顕
著である。In such a cleaning process, foreign matter and projections flow together with the cleaning liquid.
It is removed from the disk surface by being entangled with the tape, being skipped by the rotation of the disk, and the like. However, as the recording density of the magnetic disk has been increased, the size of foreign matter to be removed (to be removed) has also become extremely small, and has come to adhere smoothly without leaving the disk surface. This phenomenon is particularly remarkable during tape cleaning performed while rotating the disk, particularly during cleaning of the surface of the carbonaceous protective film.
【0004】本発明者の分析によると、炭素質保護膜表
面に残留していたのは、極微小(サブミクロン以下)の
研磨粉やクリーニングテープの材料、スパッタ時に付着
した微小成膜粉等であった。そして、この微小な異物が
磁気ディスクの欠陥原因となり、グライド、サーティフ
ァイテストの際に問題となってきている。According to the analysis of the present inventor, what remained on the surface of the carbonaceous protective film was very small (submicron or less) abrasive powder, a material for a cleaning tape, and a small film-forming powder adhered during sputtering. there were. The minute foreign matter causes a defect in the magnetic disk, which is a problem during the glide and certification tests.
【0005】[0005]
【課題を解決するための手段】本発明者等は鋭意検討し
た結果、特に微小な異物は液体への浸漬だけでは除去が
困難であること、また、表面の静電気が異物付着の原因
であることを見いだし、本発明に到達した。すなわち、
本発明の第1の要旨は、ディスク表面をクリーニングす
る工程を有する磁気記録媒体の製造方法において、テー
プクリーニングの後にロールスクラブによる洗浄を行う
ことを特徴とする磁気ディスクの製造方法に存する。ま
た、本発明の第2の要旨は、ディスク表面をクリーニン
グする工程を有する磁気記録媒体の製造方法において、
クリーニング時にディスクの除電を行うことを特徴とし
た磁気ディスクの洗浄方法に存する。更に本発明の第3
の要旨は、ディスク表面をクリーニングする工程を有す
る磁気記録媒体の製造方法において、クリーニングをロ
ールスクラブで行うとともに、クリーニング時にディス
クの除電を行うことを特徴とした磁気ディスクの洗浄方
法に存する。Means for Solving the Problems As a result of intensive studies, the present inventors have found that it is particularly difficult to remove minute foreign matter by immersion only in a liquid, and that static electricity on the surface is a cause of foreign matter adhesion. And arrived at the present invention. That is,
A first gist of the present invention resides in a method of manufacturing a magnetic recording medium having a step of cleaning the surface of a disk, wherein the cleaning is performed by a roll scrub after the tape cleaning. According to a second aspect of the present invention, there is provided a method of manufacturing a magnetic recording medium including a step of cleaning a disk surface.
The present invention is directed to a method for cleaning a magnetic disk, which comprises removing electricity from the disk during cleaning. Further, the third aspect of the present invention
The gist of the present invention resides in a method for manufacturing a magnetic recording medium having a step of cleaning the surface of a disk, wherein the cleaning is performed by a roll scrub, and the disk is destaticized at the time of cleaning.
【0006】[0006]
【発明の実施の形態】本発明において、基板としては、
サブストレイトと呼ばれて市販されている基板、即ち、
Al−Mg合金基板の表面にNi−Pの無電解メッキの
下地膜を設け、更に当該下地膜に鏡面加工(ポリッシュ
加工)を施した下地膜形成基板が好適に使用される。そ
の他、銅、チタン、ガラス、セラミック、カーボン、シ
リコン等の材料で構成された基板を使用することもでき
る。通常、基板はディスク形状に加工され、また、基板
自体の厚さは約1〜3mm、上記下地膜の厚さは約20
〜30μmである。BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, as a substrate,
A substrate that is commercially available, called a substrate,
A base film-forming substrate in which a base film of Ni-P electroless plating is provided on the surface of an Al-Mg alloy substrate, and the base film is mirror-finished (polished) is preferably used. In addition, a substrate made of a material such as copper, titanium, glass, ceramic, carbon, and silicon can be used. Usually, the substrate is processed into a disk shape, the thickness of the substrate itself is about 1 to 3 mm, and the thickness of the underlayer is about 20 mm.
3030 μm.
【0007】このような基板は、常法に従い、テキスチ
ャー加工などを行った後、使用に供される。テキスチャ
ー加工は、下地膜の鏡面に極めて微小な条痕パターン
(溝)や凹凸を付与するために行われる機械加工であ
る。また、必要に応じ、テキスチャー加工後にバリやカ
エリ等を除去するための仕上げ加工として、化学エッチ
ング又は電解エッチング(電解研磨)処理を行うことも
できる。これらの加工により、磁気ディスクと磁気ヘッ
ドとの吸着が防止され、コンタクトスタートストップ
(CSS)特性が改良され、磁気異方性が改善される。[0007] Such a substrate is subjected to a texturing process or the like according to a conventional method, and then used. The texture processing is a mechanical processing performed to provide an extremely minute stripe pattern (groove) or unevenness on the mirror surface of the base film. If necessary, chemical etching or electrolytic etching (electropolishing) can be performed as a finishing process for removing burrs and burrs after the texturing process. By these processes, the attraction between the magnetic disk and the magnetic head is prevented, the contact start / stop (CSS) characteristics are improved, and the magnetic anisotropy is improved.
【0008】基板上に形成する下地層は、従来公知の非
磁性下地層で良く、例えば、Cr、Ti、Ni等で形成
することができる。なお、下地層のCr又はTiは、通
常、これらの結晶性を損なわない範囲において、例え
ば、数原子%の範囲でSi、V、Cu等を含有する合金
であっても良い。本発明においては、特に、Cr系の下
地層が好適である。下地層の膜厚は、通常50〜200
0Åの範囲である。The underlayer formed on the substrate may be a conventionally known nonmagnetic underlayer, and may be formed of, for example, Cr, Ti, Ni, or the like. The Cr or Ti of the underlayer may be an alloy containing Si, V, Cu, etc. in a range that does not impair the crystallinity thereof, for example, in a range of several atomic%. In the present invention, a Cr-based underlayer is particularly preferable. The thickness of the underlayer is usually 50 to 200.
0 ° range.
【0009】上記基板の下地層上に形成される磁性層
は、一般に、Co−Cr、Co−Ni、Co−Cr−
X、Co−Ni−X、Co−W−X等で表わされるコバ
ルト系合金薄膜層である。ここでXとしては、Li、S
i、P、Ca、Ti、V、Cr、Ni、As、Y、Z
r、Nb、Mo、Ru、Rh、Ag、Sb、Hf、T
a、W、Re、Os、Ir、Pt、Au、La、Ce、
Pr、Nd、Pm、Sm、Eu及びBよりなる群より選
ばれた1種又は2種以上の元素が用いられる。The magnetic layer formed on the underlayer of the substrate is generally made of Co-Cr, Co-Ni, Co-Cr-.
It is a cobalt-based alloy thin film layer represented by X, Co-Ni-X, Co-WX or the like. Here, X is Li, S
i, P, Ca, Ti, V, Cr, Ni, As, Y, Z
r, Nb, Mo, Ru, Rh, Ag, Sb, Hf, T
a, W, Re, Os, Ir, Pt, Au, La, Ce,
One or more elements selected from the group consisting of Pr, Nd, Pm, Sm, Eu and B are used.
【0010】磁性層は、通常、スパッタリング等の手段
によって、基板の下地層上に被着形成される。この磁性
層の膜厚は、通常100〜1000Åの範囲が好まし
い。保護層は、炭素膜、水素化カーボン膜、窒素化カー
ボン膜、TiC、SiC等の炭化膜、SiN、TiN等
の窒化膜、SiO、Al2 O3 、ZrO等の酸化物膜等
によって構成され、通常、スパッタ法、等により形成さ
れる。保護層としては、炭素膜、水素化カーボン膜及び
窒素化カーボン膜が特に好ましい。The magnetic layer is usually formed on the underlayer of the substrate by means such as sputtering. The thickness of the magnetic layer is usually preferably in the range of 100 to 1000 °. The protective layer includes a carbon film, a hydrogenated carbon film, a nitrogenated carbon film, a carbonized film such as TiC and SiC, a nitride film such as SiN and TiN, and an oxide film such as SiO, Al 2 O 3 and ZrO. Usually, it is formed by a sputtering method or the like. As the protective layer, a carbon film, a hydrogenated carbon film and a nitrogenated carbon film are particularly preferable.
【0011】水素化カーボン膜は、水素と炭素を含有す
る膜であればよく、特に限定されるものではなく、例え
ばカーボンターゲットを用いて、スパッタガス(通常
は、アルゴンなどの不活性ガスを用いる。)と水素ガス
を含むプラズマ中でスパッタリングする方法により形成
することができる。スパッタ雰囲気中の水素の含有量
は、通常、2〜20体積%である。The hydrogenated carbon film is not particularly limited as long as it is a film containing hydrogen and carbon. For example, a sputter gas (usually using an inert gas such as argon) using a carbon target is used. ) And sputtering in a plasma containing hydrogen gas. The content of hydrogen in the sputtering atmosphere is usually 2 to 20% by volume.
【0012】窒素化カーボン膜は、窒素と炭素を含有す
る膜であればよく、特に限定されるものではなく、例え
ばカーボンターゲットを用いて、スパッタガスと窒素ガ
ス、一酸化窒素ガス、二酸化窒素ガス、アンモニアガス
などの窒素含有ガスあるいは空気などの窒素ガス含有ガ
スを含むプラズマ中でスパッタリングすることにより形
成することができる。例えば、空気を用いた場合、スパ
ッタ雰囲気中の空気の含有量は、通常、2〜20体積%
である。The nitrogenated carbon film is not particularly limited as long as it contains nitrogen and carbon. For example, a sputter gas, a nitrogen gas, a nitrogen monoxide gas, a nitrogen dioxide gas, It can be formed by sputtering in a plasma containing a nitrogen-containing gas such as ammonia gas or a nitrogen-containing gas such as air. For example, when air is used, the content of air in the sputtering atmosphere is usually 2 to 20% by volume.
It is.
【0013】また、例えば、スパッタガス中に水素ガス
及び窒素(含有)ガスを同時に混入させることにより、
水素化かつ窒素化したカーボン膜を形成することもでき
る。保護層の厚さは、通常、約50〜1000Å、好ま
しくは約100〜600Åの範囲である。保護層形成後
のテープクリーニング工程の終了後、通常、保護層の表
面に潤滑剤層が設けられる。潤滑剤としては、例えば、
フッ素系液体潤滑剤が使用され、通常、ディップコート
法、スピンコート法、スプレーコート法等により、保護
層の表面に形成される。潤滑剤層の厚さは、通常、約5
〜50Åの範囲である。Further, for example, by simultaneously mixing a hydrogen gas and a nitrogen (containing) gas into a sputtering gas,
A hydrogenated and nitrogenated carbon film can also be formed. The thickness of the protective layer is usually in the range of about 50-1000 °, preferably about 100-600 °. After the tape cleaning step after the formation of the protective layer, a lubricant layer is usually provided on the surface of the protective layer. As a lubricant, for example,
A fluorine-based liquid lubricant is used, and is usually formed on the surface of the protective layer by a dip coating method, a spin coating method, a spray coating method, or the like. The thickness of the lubricant layer is usually about 5
It is in the range of Å50 °.
【0014】研磨テープとしては、通常、ポリエチレン
テレフタレート製、ポリアミド製等のフィルム上に粒径
0.3〜3μmのアルミナ粒子、SiC粒子等の研磨砥
粒を担持した研磨テープが用いられる。例えば、日本ミ
クロコーティング株式会社製の“AWA8000 FN
Y”、“AWA8000 NA1−C”等を用いること
ができる。As the polishing tape, there is usually used a polishing tape in which a film made of polyethylene terephthalate, polyamide, or the like carries polishing grains such as alumina particles and SiC particles having a particle size of 0.3 to 3 μm. For example, "AWA8000 FN" manufactured by Nihon Micro Coating Co., Ltd.
Y "," AWA8000 NA1-C "or the like can be used.
【0015】本発明によるクリーニングは、上述した磁
気ディスク製造工程の任意の工程間に適用可能である
が、下地層の形成から炭素質保護層の形成まではスパッ
タリングによって順次行われるのが通常のため、下地層
形成前又は炭素質保護層の形成後、潤滑剤塗布前に行う
のが好ましく、また異物付着の要因である静電気の発生
しやすさ、グライド検査等最終検査に近い工程であるこ
とから、炭素質保護膜形成後かつ潤滑剤塗布前に適用す
ることが最も大きな効果が得られる。The cleaning according to the present invention can be applied between any steps of the above-mentioned magnetic disk manufacturing process. However, since the cleaning from the formation of the underlayer to the formation of the carbonaceous protective layer is usually performed sequentially by sputtering. It is preferable to perform before the formation of the underlayer or after the formation of the carbonaceous protective layer and before the application of the lubricant. The greatest effect can be obtained when applied after forming the carbonaceous protective film and before applying the lubricant.
【0016】本発明においてクリーニングは、ロールス
クラブで行うのが好ましい。スクラブロールの材質は特
に限定されないが、ポリビニルアルコール、ポリウレタ
ン等のスポンジ系材料であって、くずが出にくいものが
好ましく用いられる。In the present invention, the cleaning is preferably performed by a roll scrub. The material of the scrub roll is not particularly limited, but a sponge-based material such as polyvinyl alcohol and polyurethane, which does not easily generate waste, is preferably used.
【0017】また、洗浄を行う際、除電処理を行うと洗
浄の効果をより高めることが出来る。除電処理として
は、導電性のスピンドルを用いて基板のアースを取りな
がら洗浄を行う、除電ブラシや導電性部材から構成され
る除電ローラー(図1(a))等の部材をディスクに接
触させながら洗浄を行う、電気抵抗の小さい洗浄液を用
いる等を挙げることができ、これらを複数組み合わせて
使うと除電効果は大きくなる。Further, when performing the cleaning, the effect of the cleaning can be further enhanced by performing a static elimination treatment. In the static elimination process, cleaning is performed while grounding the substrate using a conductive spindle, and a member such as a static elimination brush or a static elimination roller (FIG. 1A) composed of a conductive member is brought into contact with the disk. Washing, use of a cleaning solution having a small electric resistance, and the like can be mentioned. When a plurality of these are used in combination, the static elimination effect is increased.
【0018】洗浄液の電気抵抗は低い方が良いが、液自
身が磁気ディスクに悪影響を及ぼす可能性があるため、
電気抵抗の小さい純水が好ましい。具体的な電気抵抗値
としては10Ω〜1MΩが好ましい。このような純水
は、図1(b)に示すように、混合ノズルに純水と二酸
化炭素を供給し、炭酸純水とすることによって得ること
が出来る。このような洗浄液は、ロールスクラブによる
洗浄のみならず、他の洗浄方法においても異物の除去効
率が高くなるという効果がある。Although it is preferable that the electric resistance of the cleaning liquid is low, the liquid itself may adversely affect the magnetic disk.
Pure water having a small electric resistance is preferred. A specific electric resistance value is preferably 10Ω to 1MΩ. Such pure water can be obtained by supplying pure water and carbon dioxide to a mixing nozzle, as shown in FIG. Such a cleaning liquid is effective not only in cleaning by roll scrub but also in other cleaning methods in that the efficiency of removing foreign substances is increased.
【0019】図2は、洗浄装置の例を示す要部正面図で
ある。ディスク1は、複数のディスク搬送ローラー兼除
電ローラー2により外周を支持されている。ロールスク
ラブ3は、その軸をモータ6に接続され、ディスク1の
表面に所定の圧力で接するように支持されている。ま
た、ディスク1の表面及びロールスクラブ3に対して洗
浄液を供給できる位置にノズル5が配置されている。FIG. 2 is a front view of an essential part showing an example of the cleaning apparatus. The outer periphery of the disk 1 is supported by a plurality of disk transport rollers and static elimination rollers 2. The roll scrub 3 has its shaft connected to the motor 6 and is supported so as to come into contact with the surface of the disk 1 at a predetermined pressure. Further, a nozzle 5 is arranged at a position where the cleaning liquid can be supplied to the surface of the disk 1 and the roll scrub 3.
【0020】この状態でノズル5から洗浄液を供給しな
がらロールスクラブ3を回転させ、同時に搬送ローラ2
によりディスク1を移動して、ディスク1表面を洗浄す
ることにより、表面の異物除去が効果的に実施できる。In this state, the roll scrub 3 is rotated while supplying the cleaning liquid from the nozzle 5, and
By moving the disk 1 and cleaning the surface of the disk 1, foreign substances on the surface can be effectively removed.
【0021】[0021]
【実施例】以下、本発明を実施例を用いて更に詳細に説
明する。 (実施例)Ni−Pメッキしたアルミ合金基板に、スパ
ッタリングによりCr下地層、Co合金磁性層並びに水
素化炭素質保護層の形成後、テープクリーニングにより
炭素質保護膜表面の微小突起及び異物を除去してから、
図2の装置を用いてスクラブ洗浄を行った。その際、搬
送ローラー2として除電ローラーを用いると共に、CO
2 ガスを吹込んで導電化(20000Ω)した洗浄水
(純水)を用いた。EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples. (Example) After forming a Cr underlayer, a Co alloy magnetic layer and a hydrogenated carbonaceous protective layer on a Ni-P plated aluminum alloy substrate by sputtering, fine protrusions and foreign substances on the surface of the carbonaceous protective film are removed by tape cleaning. after,
Scrub cleaning was performed using the apparatus of FIG. At this time, a neutralizing roller is used as the transport roller 2 and CO 2
Washing water (pure water) that was made conductive (20,000 Ω) by blowing two gases was used.
【0022】洗浄後のディスク10枚について、グライ
ド高さ0.6μ”でグライドテストを行い、また光学顕
微鏡により表面を観察し、0.2μm以上の大きさの異
物数を数えた。さらに、潤滑剤の凝集原因とされている
表面のCo残存量をそれぞれ測定し、平均値を表1に示
した。A glide test was performed on the 10 discs after cleaning at a glide height of 0.6 μm, and the surface was observed with an optical microscope to count the number of foreign substances having a size of 0.2 μm or more. The amount of Co remaining on the surface, which is considered to be the cause of the aggregation of the agent, was measured, and the average value is shown in Table 1.
【0023】(比較例)実施例と同様にテープクリーニ
ングまで行い、その後のスクラブ洗浄は行わずに実施例
と同様の測定を行った。結果を表1に示す。(Comparative Example) The same procedure as in the example was performed up to tape cleaning, and the same measurement as in the example was performed without performing scrub cleaning. Table 1 shows the results.
【0024】[0024]
【表1】 [Table 1]
【0025】[0025]
【発明の効果】以上説明したように、本発明によれば、
ディスク表面に付着した微小異物を効率よく除去するこ
とが可能となり、磁気ディスクの安定した製造が実現で
きるほか、潤滑剤のコロージョンも発生しにくくなると
いう効果を有する。また、実施例においては炭素質保護
膜のテープクリーニング後に本発明を適用したが、磁気
ディスクの製造工程の任意の場所に適用可能である。As described above, according to the present invention,
This makes it possible to efficiently remove minute foreign matter adhering to the disk surface, to achieve stable production of the magnetic disk, and to reduce the possibility of lubricant corrosion. In the embodiments, the present invention is applied after the tape cleaning of the carbonaceous protective film. However, the present invention can be applied to any place in the manufacturing process of the magnetic disk.
【図1】 本発明に適用可能な除電ローラー及び混合ノ
ズルの断面図FIG. 1 is a cross-sectional view of a static elimination roller and a mixing nozzle applicable to the present invention.
【図2】 本発明の実施に適したクリーニング装置の一
例を示す図FIG. 2 is a diagram showing an example of a cleaning device suitable for implementing the present invention.
1 ディスク 2 搬送ローラー(除電ローラー) 3 ロールスクラブ 5 ノズル 6 モーター DESCRIPTION OF SYMBOLS 1 Disc 2 Transport roller (static elimination roller) 3 Roll scrub 5 Nozzle 6 Motor
Claims (7)
有する磁気記録媒体の製造方法において、テープクリー
ニングの後にロールスクラブによる洗浄を行うことを特
徴とする磁気ディスクの製造方法。1. A method for manufacturing a magnetic recording medium comprising a step of cleaning the surface of a disk, the method comprising: cleaning the tape with a roll scrub after cleaning the tape.
有する磁気記録媒体の製造方法において、クリーニング
時にディスクの除電を行うことを特徴とした磁気ディス
クの洗浄方法。2. A method for manufacturing a magnetic recording medium, comprising the step of cleaning the surface of a disk, the method comprising: removing static electricity from the disk during cleaning.
有する磁気記録媒体の製造方法において、クリーニング
をロールスクラブで行うとともに、クリーニング時にデ
ィスクの除電を行うことを特徴とした磁気ディスクの製
造方法。3. A method for manufacturing a magnetic recording medium, comprising the step of cleaning the surface of a disk, wherein the cleaning is performed by a roll scrub, and the disk is neutralized during cleaning.
部材で支持することにより除電することを特徴とする請
求項1から3のいずれかに記載の磁気ディスクの製造方
法。4. The method of manufacturing a magnetic disk according to claim 1, wherein the disk is neutralized by supporting the disk with a grounded conductive member.
く、磁気ディスク表面に残っても実質的に影響を及ぼさ
ない液体を用いることを特徴とする請求項1から4のい
ずれかに記載の磁気ディスクの製造方法。5. A magnetic liquid according to claim 1, wherein the cleaning liquid is a liquid having a lower resistance than pure water and having substantially no influence even if it remains on the magnetic disk surface. Disc manufacturing method.
の磁気ディスクの製造方法。6. The method according to claim 5, wherein the cleaning liquid is carbonated water.
ィスクの製造方法であって、前記炭素質保護膜形成後、
潤滑剤塗布前に請求項1乃至3記載のクリーニングを適
用することを特徴とする磁気ディスクの製造方法。7. A method for manufacturing a magnetic disk having a carbonaceous protective film on a magnetic layer, the method comprising:
4. A method for manufacturing a magnetic disk, comprising applying the cleaning according to claim 1 before applying a lubricant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3265498A JPH11232642A (en) | 1998-02-16 | 1998-02-16 | Manufacturing method of magnetic disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3265498A JPH11232642A (en) | 1998-02-16 | 1998-02-16 | Manufacturing method of magnetic disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11232642A true JPH11232642A (en) | 1999-08-27 |
Family
ID=12364861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3265498A Pending JPH11232642A (en) | 1998-02-16 | 1998-02-16 | Manufacturing method of magnetic disk |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11232642A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6647998B2 (en) * | 2001-06-20 | 2003-11-18 | Taiwan Semiconductor Manufacturing Co. Ltd. | Electrostatic charge-free solvent-type dryer for semiconductor wafers |
| JP2007102844A (en) * | 2005-09-30 | 2007-04-19 | Hoya Glass Disk Thailand Ltd | Cleaning method of glass substrate for magnetic disk, glass substrate for magnetic disk and manufacturing method of magnetic disk |
-
1998
- 1998-02-16 JP JP3265498A patent/JPH11232642A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6647998B2 (en) * | 2001-06-20 | 2003-11-18 | Taiwan Semiconductor Manufacturing Co. Ltd. | Electrostatic charge-free solvent-type dryer for semiconductor wafers |
| JP2007102844A (en) * | 2005-09-30 | 2007-04-19 | Hoya Glass Disk Thailand Ltd | Cleaning method of glass substrate for magnetic disk, glass substrate for magnetic disk and manufacturing method of magnetic disk |
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