JPH11260962A - Ball grid array type semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To materialize a highly, reliable BGA(ball grid array)-type semiconductor device, by suppressing disconnection of conductive wiring and the breakage of an external terminal. SOLUTION: Individual insulating films 3 which cover individual lands 2b are separated from one another, and besides dummy wiring 10 is projected, in addition to conductive wiring 2 connected to the land 2b, from the flank 3b of the insulating film 3 covering the land 2b. Hereby, the rate of occupation of the wiring material large in rigidity inside the insulating film 3 can be enlarged, and the restriction of thermal transformation of the insulating film 3 itself can be reinforced by the dummy wiring 10. Moreover, the peeling of the flank 3b of the insulating film can be suppressed by the conductive wiring 2 and the dummy wiring 10, and the increase of the quantity of thermal transformation of the insulating film 3 by the occurrence of the peeling of the flank 3b can be suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device comprising an insulating tape provided with conductive wiring for electrically connecting a semiconductor element and an external terminal. The present invention relates to a ball grid array type semiconductor device formed from the above.

[0002]

2. Description of the Related Art In order to cope with high-density mounting of semiconductor devices, ball grid array (BGA) type semiconductor devices suitable for increasing the number of pins, reducing the size, and increasing the speed have been put to practical use. This BGA type semiconductor device has a
It has a structure in which external terminals made of solder bumps and the like are two-dimensionally arranged in an array.

In a BGA type semiconductor device, a member called an interposer having a conductive wiring formed on the surface or on the surface and inside is used for electrical connection between a semiconductor element and an external terminal. Interposers include printed wiring boards with glass / epoxy as the base material,
An insulating tape having a conductive wiring formed on a surface or the like of a polyimide or the like as a base material is used.

An example in which a semiconductor device is constituted by an insulating tape on which conductive wiring is formed is disclosed in Japanese Patent Laid-Open No. Hei 9-112002.
No. in the official gazette. FIG. 18 is a schematic sectional view of a BGA type semiconductor device using a conventional insulating tape. FIG.
8, the BGA type semiconductor device includes a semiconductor element 1;
An insulating tape 4 having an insulating film 3 formed on its surface with a conductive wiring 2 formed so as to partially open a bonding pad portion 2a and the like, and the semiconductor element 1 are fixed to the surface of the insulating tape 4. An adhesive member 5, a thin metal wire 6 for electrically connecting the semiconductor element 1 and the conductive wiring 2, and a sealing for sealing the semiconductor element 1, the thin metal wire 6, and the semiconductor element fixing surface 4a of the insulating tape 4. It is composed of a resin 7 and external terminals 8.

On the conductive wiring 2, a bonding pad 2a to which the thin metal wire 6 is connected and a land 2b to which the external terminal 8 is connected are connected.

The insulating film 3 is called a solder resist or a photoresist, and is formed by a screen printing method,
It is formed by a photo method or the like. The insulating film 3 is made of a material such as an epoxy resin, a polyimide resin, and a polybutadiene resin. The external terminal 8 mainly has a solder material (Pb
—Sn-based eutectic solder) is used.

[0007] The thin metal wires 6 and the conductive wires 2 are connected by bonding pads 2 a arranged outside the surface of the semiconductor element 1. In the portion of the bonding pad 2a,
An opening 3a is formed in the insulating film 3 so that the thin metal wire 6 and the bonding pad 2a can be joined.

The external terminals 8 are mounted on the mounting surface 4 of the insulating tape 4.
b, are arranged in an array, and are arranged below the semiconductor element 1 in the plane thereof. In order to electrically connect the external terminal 8 arranged in the surface of the semiconductor element 1 and the semiconductor element 1,
The conductive wiring 2 is formed continuously from the bonding pad 2a to the land 2b located in the plane of the semiconductor element 1.

On the mounting surface 4b side of the insulating tape 4 on which the land 2b is formed, an opening 9 reaching the land 2b is provided. In this opening 9, the land 2b and the external terminal 8 can be joined. It has become.

[0010]

By the way, in the conventional BGA type semiconductor device shown in FIG.
The linear expansion coefficient of the semiconductor element 1 made of is 2-3 × 10 ⁻⁶ /
° C, and the linear expansion coefficient of the insulating tape 4 is about 10 × 10 ⁻⁶ / ° C due to polyimide resin or the like.

When a temperature change is applied to the conventional BGA type semiconductor device having such a configuration, a thermal stress caused by a difference in linear expansion coefficient between the semiconductor element 1 and the insulating tape 4 is generated at the interface between them. In this case, cracks and peeling may occur in the bonding member 5 that bonds the two.

Further, in the conventional BGA type semiconductor device shown in FIG.
Only the sealing resin 7 is formed. Therefore, BGA
When a temperature change is applied to the mold semiconductor device, the semiconductor device undergoes warping deformation due to expansion and contraction of the sealing resin 7, whereby tensile and compression loads act on the insulating tape 4.

Since the insulating tape 4 is bonded to the semiconductor element 1 having high rigidity and the adhesive member 5, a large stress is generated at the interface between the two, and cracks and peeling occur in the adhesive member 5.

As described above, the conventional BGA shown in FIG.
In the die-type semiconductor device, there is a large possibility that the adhesive member 5 is cracked or peeled off due to at least one of the above-mentioned causes.

When a crack or peeling occurs in the bonding member 5, the insulating film 3 having a large coefficient of linear expansion is not restricted by the bonding member 5, so that the insulating film 3 can be freely thermally deformed. For this reason, the stress generated due to the difference in linear expansion coefficient between the semiconductor element 1 and the insulating film 3 is concentrated on the end of the insulating film 3.

When the insulating film 3 is formed so as to cover the entire lower surface of the semiconductor element 1, and the end of the insulating film 3 substantially coincides with the end of the semiconductor element 1, a large area is formed on the end of the semiconductor element 1. Stress is generated.

Therefore, in order to prevent stress from being concentrated on the end of the semiconductor element 1, the insulating film 3 is provided so as to cover at least the individual lands 2b in the plane of the semiconductor element 1, and the insulating films 3 are separated from each other. It is conceivable to form them independently.

By the way, as described above, the insulating film 3 which is no longer restricted by the adhesive member 5 can be freely thermally deformed. In particular, in the cooling process, a force for opening the interface on the side surface between the insulating film 3 and the adhesive member 5 is generated by the contraction of the insulating film 3 itself. Further, the insulating tape 4 is pulled outward by the deformation of the semiconductor device due to the contraction of the sealing resin 7.

For this reason, as described above, if the insulating films 3 are formed independently of each other, a force in the opening direction is further applied to the interface on the side surface of the insulating film 3. Peeling occurs on the side surface of the insulating film 3.

Further, when the temperature change is repeated, a crack may be generated from the exfoliation tip on the side surface of the insulating film 3 to the inside of the conductive wiring 2 to cause disconnection. If the conductive wiring 2 is broken, the semiconductor device will not function properly, and the reliability of the BGA type semiconductor device will be significantly reduced.

The present inventor has proposed a conventional BG shown in FIG.
For A-type semiconductor device, 150 ° C → -5 for 20 minutes
When the temperature was changed to 5 ° C., and this was taken as one cycle, an experiment was conducted. In some cases, the conductive wiring 2 was broken in about 500 cycles.

Further, the conventional BGA type semiconductor device shown in FIG. 18 has a structure in which the external terminals 8 are arranged in the plane of the semiconductor element 1. Semiconductor devices are usually glass /
It is used by mounting it on a mounting substrate made of epoxy resin or the like. When a temperature change is applied to the mounted semiconductor device, a stress due to a difference in linear expansion coefficient between the semiconductor device and the mounting board is generated in the external terminals 8.

This stress is greatest at the external terminal 8 located at the end of the semiconductor element 1 having the smallest coefficient of linear expansion among the semiconductor devices, and the possibility that the external terminal 8 is broken is increased. If a break occurs in the external terminal 8, the semiconductor device will not function properly and the reliability of the semiconductor device will be significantly reduced.

An object of the present invention is to realize a highly reliable BGA type semiconductor device which suppresses disconnection of conductive wiring and breakage of external terminals.

[0025]

The above object can be attained by employing means for reducing or restraining the amount of thermal deformation of an insulating film caused by cracking or peeling of an adhesive member. Further, the problem can be solved by adopting means for reducing the amount of warpage of the semiconductor device.

In order to achieve the above object, the present invention is configured as follows. (1) In a ball grid array type semiconductor device, a plurality of pads and a plurality of lands, and a plurality of insulating films formed so as to cover each of the plurality of lands at least in the plane of the semiconductor element and separated from each other; An insulating tape having a plurality of conductive members extending from each of the plurality of lands and projecting from the insulating film; and an adhesive member fixed to a surface of the insulating tape by an adhesive member, and a thin metal wire through the pad. A rectangular semiconductor element electrically connected to the conductive member, a sealing resin for sealing the periphery of the semiconductor element and the semiconductor element fixing surface of the insulating tape, and an external terminal joined to the land. , Is provided.

The conductive member is made of copper (Cu) or a material obtained by plating the surface of copper, and the material used for these conductive members usually has a higher elastic modulus than the material used for the insulating film. .

Therefore, the deformation of the insulating film when the temperature changes is
The insulating film covers the conductive wiring to a certain extent.

By projecting a plurality of conductive members from the insulating film formed to cover each land so as to cross the side surface of the insulating film, peeling of the side surface of the insulating film can be suppressed. By suppressing the separation on the side surface of the insulating film, the separation area is reduced, and the amount of thermal deformation of the insulating film is reduced. In addition, since the proportion of the conductive member in the insulating film also increases, the amount of thermal deformation of the insulating film is reduced by the restraint of the conductive member.

It is not necessary that all conductive members extending from each land be electrically connected to the semiconductor element. The protruding end of the conductive member may be interrupted as long as it protrudes from the insulating film and restrains the thermal deformation of the insulating film. Such a conductive member that is not electrically connected is formed on the surface of the insulating tape as a dummy wiring.

(2) Preferably, in the above (1),
Of the plurality of conductive members extending from each of the plurality of lands and protruding from the insulating film, at least one conductive member is electrically connected to the semiconductor element, and the other conductive members are at least It is formed at a position sandwiching the electrically connected conductive member.

(3) Preferably, in the above (2), with respect to a straight line connecting a center point of one land to the electrically connected conductive member, the center point is defined as a center of rotation. At least one other conductive member is formed in a region rotated by 90 ° to one side of the straight line, and at least one other conductive member is formed in a region rotated by 90 ° to the other side of the straight line. Is formed.

At least one conductive member is electrically connected to the semiconductor element, and another conductive member is formed at least at a position sandwiching the electrically connected conductive member. The thermal deformation can be restrained in a well-balanced manner, and the stress generated in the conductive member can be leveled and reduced.

(4) Preferably, in the above (1) or (2), the width of the conductive member protruding from the insulating film inside the insulating film is wider than the width outside the insulating film.

If the width of the conductive member protruding from the insulating film is formed to be wider inside the insulating film than outside, the proportion of the conductive member in the insulating film increases,
The amount of deformation of the insulating film can be reduced.

The increase in the width of the conductive member has an effect of increasing the life (the number of repetitions of temperature change) until disconnection even if a crack occurs in the conductive member, in addition to the effect of reducing the amount of deformation of the insulating film. Can be

(5) In the ball grid array type semiconductor device, an electrically conductive wiring, a land on which pads and projections connected to the conductive wiring are formed, and an insulating tape having the conductive wiring and an insulating film A rectangular semiconductor element fixed to the surface of the insulating tape by an adhesive member, and electrically connected to the conductive wiring by a thin metal wire; and a semiconductor element fixing surface around the semiconductor element and the insulating tape. And an external terminal joined to the land.

(6) An insulating tape having a plurality of pads and a plurality of lands, an insulating film covering at least the lands in a plane of the semiconductor element, and a conductive wiring connected to the pads and the lands. A rectangular semiconductor element fixed to the surface of the insulating tape by an adhesive member and electrically connected to the conductive wiring by a thin metal wire; and a semiconductor element fixing surface of the insulating tape around the semiconductor element and the semiconductor element. In a ball grid array type semiconductor device having a sealing resin that seals and an external terminal bonded to the land, the insulating film is a plurality of insulating films separated from each other, and each insulating film Are formed so as to cover the individual lands, and projections are formed on the lands so as to protrude from the insulating film.

By forming a projection on the land covered with the insulating film in addition to the conductive wiring extending from the land, the projection made of the same material as the conductive wiring restrains the insulating film, and the heat of the insulating film is reduced. The amount of deformation can be reduced.

When the insulating film covers individual lands, a projection is formed on each land so as to protrude from the insulating film. By forming such protrusions, the peeling of the side surface of the insulating film is divided, so that the amount of thermal deformation of the insulating film can be reduced.

(7) Preferably, in the above (6),
A plurality of protrusions are formed on the land, and are formed at least at positions sandwiching the conductive wiring.

(8) Preferably, in the above (7), with respect to a straight line connecting the center point of one land to the conductive wiring, one side of the straight line with the center point as a center of rotation. Forming at least one of the protrusions in a region rotated by 90 ° to the other side of the straight line by 90 °
At least one protrusion is formed in the rotated area.

The projections formed on the lands are located at positions sandwiching the conductive wiring extending from the lands, and are formed at least at two locations on both sides of the conductive wiring, so that at least the thermal deformation of the insulating film around the conductive wiring is achieved. Volume can be reduced,
A large stress can be prevented from being generated in the conductive wiring located at the lower end of the side surface of the insulating film.

(9) Preferably, the above (5),
In (6), (7) or (8), the width of the conductive wiring connected to the land inside the insulating film is wider than the width outside the insulating film.

If the width of the conductive wiring protruding from the insulating film is made wider inside the insulating film than outside, the proportion of the conductive wiring in the insulating film increases,
The amount of deformation of the insulating film can be reduced.

(10) In a ball grid array type semiconductor device, the semiconductor device has a plurality of conductive wirings, a plurality of pads and lands connected to the conductive wirings, an insulating film, and a slit on a substrate mounting surface side. A rectangular semiconductor element fixed to the surface of the insulating tape by an adhesive member and electrically connected to the conductive wiring by a thin metal wire; The semiconductor device includes a sealing resin for sealing the semiconductor element fixing surface of the tape and external terminals joined to the lands.

As described above, in the ball grid array type semiconductor device, the insulating tape receives a tensile load due to the deformation of the semiconductor device due to the shrinkage of the sealing resin. When the slit is provided on the substrate mounting surface side of the insulating tape, the tensile load due to the deformation of the semiconductor device is covered by the insulating tape outside the slit position.

Therefore, by providing the slit at an appropriate position, the tensile load to the outside of the insulating tape at the location where the disconnection of the conductive wiring occurs can be reduced. This makes it possible to reduce the stress generated at the lower end of the side surface of the insulating film.

(11) In the ball grid array type semiconductor device, the conductive wiring, the pads and lands connected to the conductive wiring, and the insulating film formed so as to cover at least the outer peripheral portion of the land are formed. An insulating tape having a rectangular semiconductor element fixed to the surface of the insulating tape by an adhesive member and electrically connected to the conductive wiring by a thin metal wire; The semiconductor device includes a sealing resin for sealing the semiconductor element fixing surface, and an external terminal joined to the land.

In a land disposed in the plane of the semiconductor element, an insulating film is formed so as to cover an outer peripheral portion of the land, and an adhesive member is formed in a central portion of the land so as to cover the land. Thus, the volume of the insulating film can be reduced, and the amount of thermal deformation of the insulating film itself can be reduced.

Since the thermal deformation of the adhesive member is usually smaller than the thermal deformation of the insulating film, the thermal deformation of the insulating film can be restricted by the adhesive member covering the center of the land.

(12) Further, the conductive wiring, pads and lands connected to the conductive wiring, an insulating tape having an insulating film, and an adhesive member fixed to the surface of the insulating tape by an adhesive member. Rectangular semiconductor element electrically connected to the conductive wiring and the thin metal wire, a sealing resin for sealing the periphery of the semiconductor element and the semiconductor element fixing surface of the insulating tape, and an external part bonded to the land. Terminals and
In a ball grid array type semiconductor device having
The linear expansion coefficient of the sealing resin is equal to the linear expansion coefficient of the insulating tape.

When the coefficient of linear expansion of the sealing resin for sealing the semiconductor element fixing surface of the insulating tape is equal to the coefficient of linear expansion of the insulating tape, the semiconductor device has a structure that is well-balanced in thermophysical properties. .

Thus, the amount of warpage of the semiconductor device due to the shrinkage of the sealing resin can be reduced, and the tensile load generated on the insulating tape can be reduced.

(13) Further, the conductive wiring, pads and lands connected to the conductive wiring, an insulating tape having an insulating film, and an adhesive member fixed to a surface of the insulating tape by an adhesive member. Rectangular semiconductor element electrically connected to the conductive wiring and the thin metal wire, a sealing resin for sealing the periphery of the semiconductor element and the semiconductor element fixing surface of the insulating tape, and an external part bonded to the land. Terminals and
In a ball grid array type semiconductor device having
The linear expansion coefficient of the insulating film is equal to the linear expansion coefficient of the adhesive member.

When the coefficient of linear expansion of the insulating film is made equal to the coefficient of linear expansion of the adhesive member, when a temperature change is applied to the semiconductor device, the thermal deformation of the insulating film and the adhesive member becomes substantially the same. Separation does not occur at the interface between the substrate and the adhesive member. In particular, since the separation does not occur on the side surface of the insulating film, the stress concentration at the portion directly below the side surface of the insulating film can be reduced.

(14) In the ball grid array type semiconductor device, the conductive wiring, pads and lands connected to the conductive wiring, an insulating tape having an insulating film, and a surface of the insulating tape are provided. A square semiconductor element fixed by an adhesive member and electrically connected to the conductive wiring, a deformation restraining member formed on the surface of the insulating tape, and insulation between the semiconductor element and the periphery of the deformation restraining member; A sealing resin for sealing the semiconductor element fixing surface of the conductive tape, and an external terminal joined to the land.

The deformation restricting member is formed on the surface of the insulating tape to reduce the amount of warpage of the semiconductor device. Thereby, the tensile load generated in the insulating tape can be reduced. In addition, it is possible to reduce distortion generated in the external terminals such as solder bumps.

(15) A plurality of conductive wirings, a plurality of pads and lands connected to the conductive wirings, an insulating tape having an insulating film, and an adhesive member fixed to the surface of the insulating tape by an adhesive member. A rectangular semiconductor element electrically connected to the conductive wiring by a thin metal wire, a sealing resin for sealing the periphery of the semiconductor element and a semiconductor element fixing surface of the insulating tape, and the land. In a ball grid array type semiconductor device having a plurality of external terminals to be joined, the distance from the side of the semiconductor element to the side of the sealing resin is equal to or longer than the distance between the external terminals, at least from the side of the semiconductor element. The external terminals are arranged up to the side of the sealing resin. By arranging the external terminals outside the lower surface of the semiconductor element, that is, between the side surface of the semiconductor element and the side surface of the sealing resin, when the semiconductor device is mounted on the board, the external terminal is positioned outside the lower surface of the semiconductor element. External terminals restrict the deformation of the semiconductor device.

As a result, it is possible to reduce the distortion generated in the external terminals located in the lower surface of the semiconductor device,
The breakage of the external terminal can be prevented.

(16) Further, an insulating tape having a plurality of pads and a plurality of lands, an insulating film covering at least the plurality of lands in the plane of the semiconductor element, and a conductive wiring connected to the pads and the lands. A rectangular semiconductor element fixed to the surface of the insulating tape by an adhesive member and electrically connected to the conductive wiring by a thin metal wire; and a semiconductor element fixing surface of the insulating tape around the semiconductor element and the semiconductor element. In a ball grid array type semiconductor device having a sealing resin that seals and an external terminal bonded to the land, the insulating film is a plurality of insulating films separated from each other, and each insulating film Is formed so as to cover each of the lands, and the conductive wiring connected to the lands has a width inside the insulating film wider than a width outside the insulating film. .

If the width of the conductive wiring is formed wider in the insulating film than in the outside, the ratio of the conductive wiring in the insulating film increases, and the amount of deformation of the insulating film can be reduced. it can.

The increase in the width of the conductive wiring not only reduces the deformation of the insulating film, but also increases the life of the conductive wiring until the disconnection occurs even if a crack occurs in the conductive wiring.

[0064]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a diagram showing a first embodiment of a ball grid array type semiconductor device according to the present invention, and is a plan view with a semiconductor element, a sealing resin, and an insulating film removed. FIG. 2 is a sectional view of the semiconductor device shown in FIG.

As shown in FIGS. 1 and 2, the first embodiment of the present invention
In the semiconductor device according to the embodiment, the insulating tape 4 on which the conductive wiring 2 is formed, the semiconductor element 1 fixed to the insulating tape 4 by the adhesive member 5, and the semiconductor element 1 and the conductive wiring 2 are electrically connected. It comprises a thin metal wire 6 to be electrically connected, a sealing resin 7 covering the semiconductor element 1, the thin metal wire 6 and the surface of the insulating tape 4, and an external terminal 8.

On the fixing surface 4a of the insulating tape 4 on the semiconductor element 1 side, a bonding pad 2a to which the fine metal wire 6 is bonded, a plurality of lands 2b to which each of the plurality of external terminals 8 is bonded, The wiring 2 is provided. The upper surface and side surfaces of the lands 2b located in the lower surface of the semiconductor element 1 on the center side of the bonding pads 2a are covered with an insulating film 3 provided for each land 2b. The conductive wiring 2 is extended on the surface of the insulating tape 4 in order to electrically connect the land 2b and the bonding pad 2a.

Land 2b located in the plane of semiconductor element 1
Thus, in addition to the conductive wiring 2 electrically connected to the bonding pad 2a, the dummy wiring 10 not connected to the bonding pad 2a is extended. The dummy wiring 10 protrudes from the side surface 3b of the insulating film 3 covering the land 2b, and its tip extends to the outside of the insulating film 3. That is, the length of the dummy wiring 10 is the land 2
The length is such that it is exposed to the outside of the side surface of the insulating film 3 from the side surface b. The dummy wiring 10 is provided on the surface of the insulating tape 4 like the conductive wiring 2 and is formed by the same process as the conductive wiring 2.

As the conductive wiring 2, a copper (Cu) foil or a copper foil whose surface is plated with gold (Au), nickel (Ni) or the like is used. The bonding pad 2a and the land 2b connected to the conductive wiring 2 are also formed of the same material, but there are cases where plating or the like is applied to each part in order to improve the bonding property.

The land 2 is provided on the mounting surface 4b of the insulating tape 4.
b, the opening 9 penetrating to the land 2b is formed.
Is connected to an external terminal 8 through an opening 9. Therefore, the external terminals 8 are formed below the semiconductor element 1, and are arranged in an array as shown in FIG.

A solder material (for example, Pb
-Sn-based eutectic solder) or the like, and after arranging a spherical solder material or a paste-like solder material in the opening 9,
The solder is melted and joined to the land 2b.

The semiconductor element 1 is fixed to the semiconductor element fixing surface 4 a of the insulating tape 4 by an adhesive member 5.
An electrode (not shown) is formed on the upper surface of the semiconductor element 1, and the electrode is connected to the bonding pad 2 a on the surface of the insulating tape 4 by a thin metal wire 6. The wiring 2 is electrically connected.

For the adhesive member 5, for example, a material having an epoxy resin as a base material is used. In addition, the thin metal wire 6 includes
A material such as gold (Au), silver (Ag), or aluminum (Al) is used.

The sealing resin 7 is made of the semiconductor element 1 and the thin metal wire 6.
It is formed so as to cover the semiconductor element fixing surface 4 a of the insulating tape 4. The sealing resin 7 is made of a material obtained by filling silica particles in an epoxy resin which is a thermosetting resin, and is formed by a transfer molding method or a potting method.

As described above, according to the semiconductor device of the first embodiment of the present invention, the individual insulating films 3 covering the individual lands 2b are separated from each other and the insulating films 3 covering the lands 2b. By projecting the dummy wirings 10 from the side surfaces 3b of the insulating film 3 in addition to the conductive wirings 2 connected to the lands 2b, it is possible to increase the proportion of the wiring material having high rigidity inside the insulating film 3, thereby increasing the insulating film. The restraint of the thermal deformation of 3 itself can be strengthened by the dummy wiring 10.

Further, peeling of the insulating film side surface 3b can be suppressed by the conductive wiring 2 and the dummy wiring 10, and an increase in the amount of thermal deformation of the insulating film 3 due to occurrence of peeling of the side surface 3b can be suppressed.

This makes it possible to prevent disconnection failure of the conductive wiring 2 which occurs at the lower end of the side surface of the insulating film 3 when a temperature change is applied to the semiconductor device, thereby suppressing disconnection of the conductive wiring. Thus, a highly reliable BGA type semiconductor device can be realized.

According to the experiment of the inventor of the present application, the BGA type semiconductor device of the first embodiment shown in FIG.
When the temperature was changed from 150 ° C. to −55 ° C. in 0 minute and this was made one cycle, no disconnection occurred in the conductive wiring 2 even in about 2,000 cycles.

In the first embodiment shown in FIGS. 1 and 2, an example is shown in which the dummy wiring 10 connected to the land 2b is provided on the land 2b arranged in the plane of the semiconductor element 1. This is because in the semiconductor device having the configuration as in the first embodiment, the land 2b located in the plane of the semiconductor element 1
This is because there is a high possibility that a disconnection failure will occur in the conductive wiring 2 connected to the wiring.

However, the formation of the dummy wiring is not limited to the land 2b disposed in the plane of the semiconductor element 1, and the dummy wiring 10 may be formed also in the land 2b disposed out of the plane. Absent. Further, the dummy wirings 10 may be connected to the bonding pads 2a in the same manner as the conductive wirings 2, or may be connected to other lands 2b or the dummy wirings 10 and further to the conductive wirings 2.

In the first embodiment shown in FIGS. 1 and 2, an example of a semiconductor device in which external terminals 8 bonded to the lands 2b are arranged both outside and in the plane of the semiconductor element 1 will be described. Although shown, the present invention is of course applicable to an example in which the external terminals 8 are arranged only in the plane of the semiconductor element 1.

That is, the first embodiment of the present invention is similar to that of FIG.
As shown in the above, the present invention can be similarly applied to a semiconductor device having a configuration in which all the external terminals 8 are arranged in the plane of the semiconductor element 1. In the example shown in FIG. 3, dummy lands 10 are formed on all lands 2b.

FIG. 4 is a plan view showing another aspect of the first embodiment shown in FIGS. 1 and 2 show an example in which four dummy wirings 10 connected to the lands 2b are provided for each of the lands 2b arranged in the plane of the semiconductor element 1. Insulating film 3
The effect of restraining the thermal deformation of the dummy wiring 10 is improved as the number of dummy wirings 10 is increased.

However, when the distance between the lands 2b is small, it is impossible to form many dummy wirings 10 on the lands 2b. The number of the dummy wirings 10 may be one or more as long as the thermal deformation of the insulating film 3 itself is restrained and disconnection of the conductive wiring 2 can be prevented.

However, in order to restrain the thermal deformation of the insulating film 3 in a well-balanced manner and to level and reduce the stress generated in the conductive wiring 2, as shown in FIG. It is desirable to form at least two dummy wirings 10 so as to sandwich the conductive wiring 2.

In other words, with respect to a straight line connecting the center point of the land 2b and the extension of the conductive wiring 2, the center point is used as the center of rotation, and on the surface of the insulating tape 4 on one side of the straight line. One dummy wiring 10 is formed in a region rotated by 90 °, and another dummy wiring 10 is formed in a region rotated by 90 ° on the other side of the straight line. Preferably, the dummy wiring 10 is formed in a region rotated by 45 ° to one or the other side of the straight line.

FIGS. 5 and 6 are views for explaining another aspect of the first embodiment of the present invention shown in FIGS. 1 and 2.
FIG. 4 is a plan view showing the shapes of a conductive wiring 2 and a dummy wiring 10 connected to a land 2b.

In FIG. 5, the conductive wiring 2 and the dummy wiring 10 are connected to the land 2b, and these are protruded from the insulating film 3 and extended. Conductive wiring 2
The width a of the inside of the insulating film 3 is larger than the width b of the outside, and the width of the outside gradually narrows to a constant value. With such a configuration of the width of the conductive wiring 2, the function of reducing the amount of thermal deformation of the insulating film 3 itself at least in the vicinity of the conductive wiring 2 by restraining the conductive wiring 2 can be increased.

Further, by increasing the wiring width in the vicinity of the portion protruding from the insulating film 3, even if the wiring is cracked, it is possible to increase the life until the wiring is completely broken, and the It is possible to prevent the occurrence of defects during the use period of the device.

FIG. 6 shows an example in which, in addition to the conductive wiring 2 extending from the land 2b, a wide portion is formed in the dummy wiring 10 so that the width a inside the insulating film 3 is larger than the external width b. With such a configuration, the amount of thermal deformation of the insulating film 3 can be further reduced.

It is considered that the larger the width a inside the insulating film 3 and the outside width b of the conductive wiring 2 and the dummy wiring 10 are, the greater the effect of reducing the amount of thermal deformation of the insulating film 3 is. The larger the value, the greater the possibility of noise contamination. Further, the size of these widths a and b is limited due to the relationship with the wiring such as the adjacent land 2b. Therefore, the widths a and b are determined from the relationship between the above-described noise mixing and other wirings.

FIG. 7 is a view showing a second embodiment of the ball grid array type semiconductor device according to the present invention, and is a plan view in a state where a semiconductor element, a sealing resin, and an insulating film are removed. . FIG. 8 is a sectional view of the semiconductor device shown in FIG.

As shown in FIGS. 7 and 8, the second embodiment of the present invention
As in the first embodiment, the semiconductor device according to the second embodiment includes an insulating tape 4 on which conductive wiring 2 is formed, a semiconductor element 1 fixed to the insulating tape 4 by an adhesive member 5, and a semiconductor device. The semiconductor device includes a thin metal wire for electrically connecting the element to the conductive wiring, a sealing resin for covering the semiconductor element, the thin metal wire and the surface of the insulating tape, and an external terminal.

The first embodiment shown in FIG. 1 and FIG.
The difference from the second embodiment is that a plurality of protrusions 11 protruding from the insulating film 3 covering the lands 2b are formed at least for the lands 2b disposed in the lower surface of the semiconductor element 1. . Other configurations are the same as the first embodiment and the second embodiment.
The protrusion 11 is made of copper (Cu) foil or the like, like the land 2b and the conductive wiring 2.

As described above, the plurality of protrusions 1 are provided on the land 2b.
By forming 1, the ratio of the wiring material having high rigidity inside the insulating film 3 can be increased, and the thermal deformation of the insulating film 3 itself can be further restrained. Further, the peeling of the side surface 3b of the insulating film 3 can be suppressed by the conductive wiring 2 and the protrusion 11, and an increase in the amount of thermal deformation of the insulating film 3 due to the occurrence of the peeling of the side surface 3b can be suppressed.

As a result, when the semiconductor device is subjected to a temperature change, it is possible to prevent disconnection failure of the conductive wiring 2 generated at the lower end portion of the side surface of the insulating film 3 and to suppress disconnection of the conductive wiring. Thus, a highly reliable BGA type semiconductor device can be realized.

The number of the protrusions 11 may be one or more as long as the protrusions 11 can restrain the thermal deformation of the insulating film 3 itself and prevent the conductive wiring 2 from being disconnected. However, in order to restrain the thermal deformation of the insulating film 3 in a well-balanced manner and to level out and reduce the stress generated in the conductive wiring 2, conductive portions near both sides of the conductive wiring 2 as shown in FIG. It is desirable to form at least two projections 11 so as to sandwich the wiring 2.

That is, with respect to a straight line connecting the center point of the land 2b and the extension line of the conductive wiring 2, on the surface of the insulating tape 4 on one side of the straight line with the center point as the center of rotation. One protrusion 11 is formed in a region rotated by 90 °, and another protrusion 11 is formed in a region rotated by 90 ° on the other side of the straight line. Preferably, the projections 11 are formed in a region rotated by 45 ° on one or the other side of the straight line.

Further, it is desirable to form a wide portion in the conductive wiring 2 such that the width a inside the insulating film 3 is larger than the outside width b as shown in FIG. The width a of the conductive wiring 2 inside the insulating film 3 is larger than the width b of the outside, and the width of the outside gradually decreases to a constant value.

With such a configuration, the amount of thermal deformation of the insulating film 3 itself at least in the vicinity of the conductive wiring 2 can be reduced by restraining the conductive wiring 2 provided with the wide portion. Further, even when a crack is generated in the wiring, the life until the wire is completely broken can be increased, and it is possible to prevent the occurrence of defects during a normal use period.

FIG. 11 is a view showing a third embodiment of the ball grid array type semiconductor device according to the present invention, and is a plan view in a state where a semiconductor element and a sealing resin are removed. FIG. 12 is a sectional view of the semiconductor device shown in FIG.

As shown in FIGS. 11 and 12, the semiconductor device according to the third embodiment of the present invention comprises an insulating tape 4 on which conductive wiring 2 is formed, and an insulating tape 4 formed by an adhesive member 5. A fixed semiconductor element 1, a thin metal wire 6 for electrically connecting the semiconductor element 1 and the conductive wiring 2, a sealing resin 7 covering the semiconductor element 1, the thin metal wire 6 and the surface of the insulating tape 4, And an external terminal 8.

On the fixing surface 4a of the insulating tape 4 on the semiconductor element 1 side, a bonding pad 2a and a plurality of lands 2b are provided.
And a conductive wiring 2, and an insulating film 3 is provided so as to cover a land 2 b located in the lower surface of the semiconductor element 1 at a center side of the bonding pad 2 a. The insulating film 3 is provided for each land 2b. An opening 12 is formed at the center of the upper surface of the land 2b of the insulating film 3 covering these lands 2b.
It is in contact with the upper surface of the land 2b.

Therefore, the insulating film 3 is configured to cover the outer peripheral portion of the land 2b. The conductive wiring 2 is extended on the surface of the insulating tape 4 to electrically connect the land 2b and the bonding pad 2a. An opening 9 penetrating to the land 2b is formed on the mounting surface 4b of the insulating tape 4, and an external terminal 8 is joined to the land 2b via the opening 9.

The semiconductor element 1 is fixed to the semiconductor element fixing surface 4a of the insulating tape 4 by an adhesive member 5.
An electrode (not shown) is formed on the upper surface of the semiconductor element 1. By connecting this electrode to the bonding pad 2a on the surface of the insulating tape 4 with a thin metal wire 6,
The semiconductor element 1 and the conductive wiring 2 are electrically connected.

The sealing resin 7 is formed so as to cover the semiconductor element 1, the thin metal wires 6, and the semiconductor element fixing surface 4 a of the insulating tape 4.

As in the third embodiment, the insulating film 3
Has an opening 12 at a portion corresponding to the central portion of the upper surface of the land 2b, and has a configuration in which the adhesive member 5 penetrates into the opening 12, so that the heat of the insulating film 3 itself is reduced due to the volume reduction of the insulating film 3. The amount of deformation can be reduced, and when a temperature change is applied to the semiconductor device, disconnection failure of the conductive wiring 2 can be prevented. The semiconductor device described above can be realized.

The insulating film 3 is made of a material such as an epoxy resin, a polyimide resin or a polybutadiene resin. On the other hand, the adhesive member 5 is made of an epoxy resin or a polyimide resin material filled with an inorganic glass or the like. Normally, the coefficient of linear expansion of the material for the adhesive member 5 is smaller than that of the material for the insulating film 3, so that the amount of thermal deformation of the adhesive member 5 is smaller than the amount of thermal deformation of the insulating film 3. Therefore, the opening 1 at the center of the upper surface of the land 2b
The deformation of the insulating film 3 can be restrained by the adhesive member 5 that has penetrated into 2.

FIG. 13 is a sectional view showing a fourth embodiment of the ball grid array type semiconductor device according to the present invention. FIG. 14 is a sectional view showing the semiconductor element, the insulating film, and the sealing element of the semiconductor device shown in FIG. It is a top view in the state where resin and was removed.

The basic structure of the semiconductor device according to the fourth embodiment is the same as that of the above-described first embodiment, except that no dummy wiring is formed. The slit 13 is formed in the insulating sheet 4 from the mounting surface 4b side of the insulating sheet 4.

The slit 13 is the mounting surface 4 of the insulating tape 4
14B, it is desirable to form the semiconductor element 1 in a rectangular shape along the four sides of the outer shape as shown in FIG. 14 so as not to penetrate from the mounting surface 4b to the fixing surface 4a of the semiconductor element 1. Further, it is desirable that the slit 13 is formed immediately outside the land 2b where the disconnection failure occurs.

[0111] Such a slit 13 is inserted into the insulating tape 4.
When the semiconductor device is cooled, the tensile load acting on the insulating tape 4 can be reduced by the deformation of the slit 13 due to the contraction of the sealing resin 7 when the semiconductor device is cooled.

As a result, on the lower surface side of the semiconductor element 1, the insulating tape 4 located closer to the center than the slit 13 is formed.
Large tensile load is no longer applied, and the stress generated at the lower end of the side surface of the insulating film 3 disposed in this portion can be reduced.

That is, when a temperature change is applied to the semiconductor device, it is possible to prevent the disconnection failure of the conductive wiring 2, to suppress the disconnection of the conductive wiring, and to obtain a highly reliable BG.
The effect that an A-type semiconductor device can be realized is obtained.

FIG. 15 is a sectional view showing a fifth embodiment of the ball grid array type semiconductor device according to the present invention. FIG. 16 is a sectional view showing the semiconductor element, the insulating film, and the sealing member of the semiconductor device shown in FIG. It is a top view in the state where resin and a deformation restraint member were removed.

The basic configuration of the semiconductor device according to the fifth embodiment is the same as that of the above-described first embodiment, except that no dummy wiring is formed. And that a frame-shaped deformation restricting member 14 is formed on the outer peripheral portion of the semiconductor element 1 on the semiconductor element fixing surface 4 a of the insulating sheet 4.

The deformation restraining member 14 is made of a metal material such as copper (Cu), and is adhered to the semiconductor element fixing surface 4a of the insulating tape 4 outside the bonding pad 2a by an adhesive (not shown). After being adhered to the insulating tape 4, the deformation restraining member 14 is sealed by the sealing resin 7 together with the semiconductor element 1 and the thin metal wires 6.

The deformation restricting member 14 is configured to have a higher rigidity than the insulating tape 4 and has a thickness of 0.1 mm.
A metal plate having a thickness of about 0.2 mm processed into a predetermined shape is used.

By providing such a deformation restraining member 14 on the outer peripheral portion of the semiconductor element 1, the amount of warpage deformation when a temperature change is applied to the semiconductor device can be reduced.
The tensile load generated on the insulating tape 4 during cooling can be reduced.

Thus, the stress generated at the lower end of the side surface of the insulating film 3 can be reduced. Further, among the strains generated in the external terminals 8 formed of solder or the like, a strain component due to the warpage of the semiconductor device can be reduced. Therefore, disconnection of the conductive wiring and breakage of the external terminal can be suppressed, and a highly reliable BGA type semiconductor device can be realized.

In the ball grid array type semiconductor device according to the present invention, it is desirable that each of the sealing resin 7 and the insulating tape 4 be made of a material having the same coefficient of linear expansion.

The semiconductor element fixing surface side 4a of the insulating tape 4
The coefficient of linear expansion of the sealing resin 7 for sealing the insulating tape 4
When the coefficient of linear expansion is made equal, the semiconductor device has a structure in which thermophysical properties are balanced. Thus, the amount of warpage of the semiconductor device due to shrinkage of the sealing resin 7 can be reduced, and the effect of reducing the tensile load generated on the insulating tape 4 can be obtained.

Further, among the strains generated in the external terminals 8 formed by solder bumps or the like, the strain components due to the warpage of the semiconductor device can be reduced.

The sealing resin 7 is filled with silica particles. By adjusting the filling rate of the silica particles, the coefficient of linear expansion of the sealing resin 7 is reduced to the linear expansion coefficient of the insulating tape 4. Can be equivalent.

Further, in the ball grid array type semiconductor device according to the present invention, it is desirable that each of the insulating film 3 and the adhesive member 5 is made of a material having the same linear expansion coefficient.

When the linear expansion coefficients of the insulating film 3 and the adhesive member 5 are made equal to each other, when a temperature change is applied to the semiconductor device, the amounts of thermal deformation of the insulating film 3 and the adhesive member 5 are almost the same. No separation occurs at the interface between the adhesive member 5 and the adhesive member 5. In particular, since the separation does not occur on the side surface 3b of the insulating film, the effect of reducing the concentration of stress at the lower portion of the side surface of the insulating film 3 is obtained.

By filling the adhesive member 5 with inorganic glass particles or the like and adjusting the filling rate of the glass particles, the linear expansion coefficients of the insulating film 3 and the adhesive member 5 can be made equal.

FIG. 17 is a sectional view for illustrating a sixth embodiment of the ball grid array type semiconductor device according to the present invention. The semiconductor device according to the sixth embodiment shown in FIG. 17 includes an insulating tape 4 on which conductive wiring 2 is formed, a semiconductor element 1 fixed to the insulating tape 4 by an adhesive member 5, A thin metal wire 6 for electrically connecting the conductive wiring 2; a sealing resin 7 covering the surface of the semiconductor element 1, the thin metal wire 6 and the insulating tape 4; and external terminals 8.

A bonding pad 2a, a land 2b, and a conductive wiring 2 are provided on the semiconductor element fixing surface 4a of the insulating tape 4, and a region excluding the bonding pad 2a is covered with the insulating film 3. I have.

The land 2 is provided on the mounting surface 4b of the insulating tape 4.
b, the opening 9 penetrating to the land 2b is formed.
Is connected to an external terminal 8 through an opening 9.

The semiconductor element 1 is fixed to the semiconductor element fixing surface 4a of the insulating tape 4 by an adhesive member 5.
An electrode (not shown) is formed on the upper surface of the semiconductor element 1, and the electrode is connected to the bonding pad 2 a on the surface of the insulating tape 4 by a thin metal wire 6, so that the semiconductor element 1 and the conductive wiring are formed. 2 are electrically connected.

The sealing resin 7 is made of the semiconductor element 1 and the thin metal wire 6.
It is formed so as to cover the semiconductor element fixing surface 4a of the insulating tape.

In the sixth embodiment, the distance c from the side surface of the semiconductor element 1 to the side surface of the sealing resin 7 is set to the external terminal 8
The interval d is set to be equal to or longer than each other so that the external terminals 8 can be arranged not only inside the lower surface of the semiconductor element 1 but also outside the lower surface of the semiconductor element 1. That is, the external terminals 8 are arranged between the side surface of the semiconductor element 1 and the side surface of the sealing resin 7 and also on the mounting surface side of the semiconductor device.

As described above, by arranging the external terminals 8 also outside the lower surface of the semiconductor element 1, when the semiconductor device is mounted on a substrate, the external terminals 8 located outside the surface of the semiconductor element 1 are The deformation is restricted.

As a result, among the strains generated in the external terminals located in the plane of the semiconductor element, the strain component due to the warpage of the semiconductor device is reduced, so that the breakage of the external terminals 8 can be prevented.

Therefore, disconnection of the conductive wiring and breakage of the external terminal can be suppressed, and a highly reliable BGA type semiconductor device can be realized.

The seventh embodiment of the present invention is different from the first embodiment in that the dummy wiring 10 is not provided.
The conductive wiring 2 has a configuration in which the width a inside the insulating film 3 is wider than the outside width b, and the outside width is gradually narrowed to a constant value.

That is, in this example, only the dummy wiring 10 is excluded from the land 2b in the example shown in FIG. According to the seventh embodiment, the function of reducing the amount of thermal deformation of the insulating film 3 in the vicinity of the conductive wiring 2 by restraining the conductive wiring 2 can be increased, and disconnection of the conductive wiring can be suppressed. Thus, a highly reliable BGA type semiconductor device can be realized.

[0138]

Since the present invention is configured as described above, it has the following effects. To reduce the amount of deformation of the insulating film when a temperature change is applied to the ball grid array type semiconductor device, and to further reduce the amount of out-of-plane deformation of the semiconductor device to reduce the tensile load generated on the insulating tape. Can be. Thus, the stress generated at the lower end of the side surface of the insulating film can be reduced, so that the occurrence of disconnection of the conductive wiring projecting from the insulating film can be prevented.

Further, by reducing the deformation of the semiconductor device, it is possible to reduce the distortion generated in the external terminal located at the end of the semiconductor element, and to prevent the external terminal from being broken.

Therefore, disconnection of the conductive wiring and breakage of the external terminal can be suppressed, and a highly reliable BGA type semiconductor device can be realized.

[Brief description of the drawings]

FIG. 1 is a plan view of a first embodiment of a semiconductor device according to the present invention.

FIG. 2 is a sectional view of the semiconductor device shown in FIG. 1;

FIG. 3 is a sectional view showing another aspect of the first embodiment shown in FIG. 1;

FIG. 4 is a plan view of another embodiment of the first embodiment shown in FIG. 1, with members at the top of the insulating tape removed;

FIG. 5 is a partial plan view showing another example of a conductive wiring shape of the semiconductor device according to the first embodiment shown in FIG. 1;

FIG. 6 is a partial plan view showing still another example of a conductive wiring shape of the semiconductor device according to the first embodiment shown in FIG. 1;

FIG. 7 is a plan view of a second embodiment of the semiconductor device according to the present invention.

8 is a cross-sectional view of the semiconductor device shown in FIG.

FIG. 9 is a partial plan view showing another aspect of the second embodiment shown in FIG. 7;

FIG. 10 is a partial plan view showing still another mode of the second embodiment shown in FIG. 7;

FIG. 11 is a plan view of a third embodiment of the semiconductor device according to the present invention.

FIG. 12 is a sectional view of the semiconductor device shown in FIG. 11;

FIG. 13 is a sectional view of a fourth embodiment of the semiconductor device according to the present invention.

14 is a plan view of the semiconductor device shown in FIG.

FIG. 15 is a sectional view of a semiconductor device according to a fifth embodiment of the present invention.

16 is a plan view of the semiconductor device shown in FIG.

FIG. 17 is a sectional view of a semiconductor device according to a sixth embodiment of the present invention;

FIG. 18 is a cross-sectional view illustrating a conventional ball grid array type semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Conductive wiring 2a Bonding pad 2b Land 3 Insulating film 3a Insulating film opening of bonding pad part 3b Side surface of insulating film 4 Insulating tape 4a Insulating tape semiconductor element fixing surface 4b Insulating tape mounting surface 5 Adhesive member 6 Thin metal wire 7 Sealing resin 8 External terminal 9 Opening of insulating tape 10 Dummy wiring 11 Projection 12 Opening of insulating film 13 Slit 14 Deformation restraint member

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Naotaka Tanaka 502, Kandachicho, Tsuchiura-shi, Ibaraki Pref.

Claims (16)

[Claims] In a ball grid array type semiconductor device, a plurality of pads and a plurality of lands, and a plurality of insulating films formed so as to cover each of the plurality of lands at least in the plane of the semiconductor element and separated from each other. And an insulating tape having a plurality of conductive members extending from each of the plurality of lands and protruding from the insulating film, fixed to a surface of the insulating tape by an adhesive member,
A rectangular semiconductor element electrically connected to the conductive member via the pad by a thin metal wire, a sealing resin for sealing a periphery of the semiconductor element and a semiconductor element fixing surface of the insulating tape, A ball grid array type semiconductor device, comprising: an external terminal joined to the land. 2. The ball grid array type semiconductor device according to claim 1, wherein at least one of the plurality of conductive members extending from each of said plurality of lands and projecting from said insulating film is provided. A ball grid array type semiconductor device electrically connected to the semiconductor element, wherein another conductive member is formed at least at a position sandwiching the electrically connected conductive member. 3. A ball grid array type semiconductor device according to claim 2, wherein said center point is a center of rotation with respect to a straight line connecting a center point of one land and said electrically connected conductive member. 90 ° to one side of the straight line
Forming at least one other conductive member in the rotated area, and forming at least one other conductive member in the area rotated by 90 ° to the other side of the straight line. Characteristic ball grid array type semiconductor device. 4. The ball grid array semiconductor device according to claim 1, wherein the width of the conductive member protruding from the insulating film inside the insulating film is wider than the width outside the insulating film. Grid array type semiconductor device. 5. A ball grid array type semiconductor device, comprising: a conductive wiring; a land on which pads and projections connected to the conductive wiring are formed; an insulating tape having the conductive wiring and an insulating film; Fixed to the surface of the insulating tape by an adhesive member,
A rectangular semiconductor element electrically connected to the conductive wiring by a thin metal wire; a sealing resin for sealing a periphery of the semiconductor element and a semiconductor element fixing surface of the insulating tape; A ball grid array type semiconductor device comprising: 6. An insulating tape having a plurality of pads and a plurality of lands, an insulating film covering at least the plurality of lands in a plane of the semiconductor element, an insulating tape having conductive wiring connected to the pads and the lands, A rectangular semiconductor element fixed to the surface of the insulating tape by an adhesive member and electrically connected to the conductive wiring by a thin metal wire, and a periphery of the semiconductor element and a semiconductor element fixing surface of the insulating tape sealed. In a ball grid array type semiconductor device having a sealing resin to be stopped and an external terminal bonded to the land, the insulating film is a plurality of insulating films separated from each other, and each insulating film is individually A ball grid array type semiconductor formed so as to cover the land, and a protrusion protruding from the insulating film is formed on the land. apparatus. 7. A ball grid array type semiconductor device according to claim 6, wherein a plurality of protrusions are formed on said lands, and formed at least at positions sandwiching said conductive wiring. apparatus. 8. A ball grid array type semiconductor device according to claim 7, wherein one of said straight lines is defined as a center of rotation with respect to a straight line connecting a center point of one land to said conductive wiring. A ball formed by forming at least one of the protrusions in a region rotated by 90 ° to the side, and forming at least one of the protrusions in a region rotated by 90 ° to the other side of the straight line; Grid array type semiconductor device. 9. The ball grid array type semiconductor device according to claim 5, wherein the width of the conductive wiring connected to the land inside the insulating film is wider than the width outside the insulating film. A ball grid array type semiconductor device comprising: 10. A ball grid array type semiconductor device, comprising: a plurality of conductive wirings; a plurality of pads and lands connected to the conductive wirings; an insulating film; and a slit formed on the substrate mounting surface side. An insulating tape, fixed to the surface of the insulating tape by an adhesive member,
A rectangular semiconductor element electrically connected to the conductive wiring by a thin metal wire; a sealing resin for sealing the periphery of the semiconductor element and a semiconductor element fixing surface of the insulating tape; And a ball grid array type semiconductor device comprising: 11. A ball grid array type semiconductor device, comprising: a conductive wiring; a pad and a land connected to the conductive wiring; and an insulating film formed so as to cover at least an outer peripheral portion of the land. A tape, fixed to the surface of the insulating tape by an adhesive member,
A rectangular semiconductor element electrically connected to the conductive wiring by a thin metal wire; a sealing resin for sealing a periphery of the semiconductor element and a semiconductor element fixing surface of the insulating tape; And a ball grid array type semiconductor device comprising: 12. A conductive wiring, pads and lands connected to the conductive wiring, an insulating tape having an insulating film, and an adhesive member fixed to a surface of the insulating tape by an adhesive member. A rectangular semiconductor element electrically connected by a thin metal wire, a sealing resin for sealing the periphery of the semiconductor element and the semiconductor element fixing surface of the insulating tape, and an external terminal joined to the land, The ball grid array type semiconductor device according to claim 1, wherein a linear expansion coefficient of the sealing resin is equal to a linear expansion coefficient of the insulating tape. 13. A conductive wiring, pads and lands connected to the conductive wiring, an insulating tape having an insulating film, and an adhesive member fixed to a surface of the insulating tape by an adhesive member. A rectangular semiconductor element electrically connected by a thin metal wire, a sealing resin for sealing the periphery of the semiconductor element and the semiconductor element fixing surface of the insulating tape, and an external terminal joined to the land, The ball grid array type semiconductor device according to claim 1, wherein a linear expansion coefficient of the insulating film is equal to a linear expansion coefficient of the adhesive member. 14. A ball grid array type semiconductor device, comprising: a conductive wiring; pads and lands connected to the conductive wiring; an insulating tape having an insulating film; and an adhesive member on a surface of the insulating tape. Stuck,
A rectangular semiconductor element electrically connected to the conductive wiring; a deformation restraining member formed on the surface of the insulating tape; a semiconductor element fixed to the periphery of the semiconductor element and the deformation restraining member and the insulating tape; A ball grid array type semiconductor device comprising: a sealing resin for sealing a surface; and an external terminal joined to the land. 15. A plurality of conductive wirings, a plurality of pads and lands connected to the conductive wirings, an insulating tape having an insulating film, and a metal fixed to a surface of the insulating tape by an adhesive member. A rectangular semiconductor element electrically connected to the conductive wiring by a thin wire; a sealing resin for sealing a periphery of the semiconductor element and a semiconductor element fixing surface of the insulating tape; In a ball grid array type semiconductor device having a plurality of external terminals, a distance from the semiconductor element side surface to the sealing resin side surface is set to be equal to or longer than a distance between the external terminals,
Between the semiconductor element side surface and the sealing resin side surface,
A ball grid array type semiconductor device, wherein the external terminals are arranged. 16. An insulating tape having a plurality of pads and a plurality of lands, an insulating film covering at least the lands in a plane of the semiconductor element, an insulating tape having conductive wiring connected to the pads and the lands, A rectangular semiconductor element fixed to the surface of the insulating tape by an adhesive member and electrically connected to the conductive wiring by a thin metal wire, and a periphery of the semiconductor element and a semiconductor element fixing surface of the insulating tape sealed. In a ball grid array type semiconductor device having a sealing resin to be stopped and an external terminal bonded to the land, the insulating film is a plurality of insulating films separated from each other, and each insulating film is individually The conductive wiring formed to cover the land and connected to the land has a width inside the insulating film wider than a width outside the insulating film. Ball grid array type semiconductor device.