JPH11274020A - Semiconductor substrate and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a semiconductor device formed on the substrate, wherein a high-frequency circuit with less current consumption and less leakage of high-frequency signal in a circuit is formed at low cast. SOLUTION: A substrate layer 10, an insulating layer 12, and a semiconductor layer 14 are provided, and the insulating layer 12 is bonded onto the substrate layer 10, while the semiconductor layer 14 is formed on the insulating layer 12. Before the insulating layer 12 is formed on the substrate layer 10, impurity ions are implanted so that a low-resistance layer is formed on the surface of the substrate layer 10 which is to be an interface with the insulating layer 12. Thus, the substrate layer 10 comprises a conductive layer of resistivity of 1 to 100 (Ω.cm) in a surface layer region from the interface with the insulating layer 12 within 10 (μm), so that a region deeper than the surface layer region has a resistivity of at least 1 (kΩ.cm).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an SOI (Silicon) having a semiconductor layer on an insulating layer deposited on the surface of a substrate layer.
The present invention relates to a semiconductor substrate having an On Insulator) structure and a semiconductor device formed on the substrate, and in particular, can form a high-frequency circuit with low current consumption and low leakage of high-frequency signals in the circuit at low cost. The present invention relates to a semiconductor substrate and a semiconductor device formed on the substrate.

[0002]

2. Description of the Related Art In mobile communications such as mobile phones, several tens of
Handles high-frequency signals of 0 [MHz] or more. For this reason,
Gallium arsenide or a semiconductor device suitable for high frequency by a high performance silicon bipolar process has been used for an integrated circuit therein. Further, in recent years, integration of a high-frequency circuit, which has been constituted by a single element, has been studied. Such high-frequency integrated circuits include those using a field effect transistor (hereinafter, referred to as MESFET) mainly using gallium arsenide as a substrate layer and those using bipolar transistors using silicon as a substrate layer.

However, a high-frequency integrated circuit using gallium arsenide as a substrate layer is suitable for high frequencies, but has a drawback that it is difficult to establish a stable manufacturing process and the cost is high.

On the other hand, in a high frequency integrated circuit using a bipolar process, since a substrate layer made of silicon cannot be made semi-insulating, a transistor formed on the substrate and the substrate layer are electrically connected by a depletion layer between pn junctions. Separated. For this reason, a parasitic capacitance is likely to be generated below a transistor or a wiring. When a high-frequency signal of 100 [MHz] or more is handled, a small parasitic capacitance that does not pose a problem at a low frequency causes a leakage of a high-frequency signal. there were.

In order to solve the above problems, a substrate layer, a semiconductor layer for forming an integrated circuit,
SOI completely insulated by an insulating layer made of silicon oxide
A high-frequency circuit using a substrate and integrating a metal-oxide film-semiconductor field effect transistor (hereinafter referred to as MOSFET) has begun to be studied. A typical example is an SOI substrate using silicon as a substrate layer.

It is already known that in such an SOI substrate, the use of high-resistivity silicon as the substrate layer reduces leakage of high-frequency signals and is suitable for forming an integrated circuit. (Reference: Proceeding 1996 IEEE International SOI Confere
nce, p. 130, etc.). Here, the high resistivity refers to a resistivity that is sufficiently high compared to about 10 [Ω · cm] of ordinary silicon, and specifically, 1 [kΩ · cm].
It refers to a degree or more.

On the other hand, a portable device such as a mobile phone usually uses a battery, and the current consumption in each circuit is reduced so that the use time can be extended as much as possible within the range of the amount of stored power of the battery to be used. Is an important issue.
Since such portable devices need to change the intensity of the output radio wave in accordance with the strength of the radio wave to be received, an output intensity control circuit that changes the output intensity of the high-frequency signal with a DC voltage is incorporated in this device. ing.

[0008]

However, even in the conventional SOI substrate, although the amount of high frequency signal leakage can be reduced as compared with the case using gallium arsenide or the like, high frequency signal leakage still occurs. is there.

On the other hand, an output intensity control circuit incorporated in a portable device is usually composed of a transistor, a resistor, a capacitor, and the like, so that current consumption cannot be avoided.
Accordingly, an object of the present invention is to solve such a conventional problem, and a semiconductor substrate capable of inexpensively forming a high-frequency circuit with low current consumption and low leakage of high-frequency signals in the circuit. And a semiconductor device formed on the substrate.

[0010]

Means for Solving the Problems As a result of intensive studies, the present inventors have found that if the voltage of the substrate layer of an SOI substrate having a specific structure is controlled, a high-frequency circuit formed on the SOI substrate has a high frequency. It was clarified that the output intensity of the signal could be changed. At the same time, it has been clarified that by controlling the voltage of the substrate layer used for the SOI substrate, the amount of leakage of the high-frequency signal in the high-frequency circuit formed on the SOI substrate can be changed. Therefore, the present inventors have focused on forming a conductive layer for applying a voltage on the substrate layer, controlling the voltage of the substrate layer with the conductive layer, and further proceeding with the conductive layer. Were formed in which position of the substrate layer, and what degree of resistivity of the conductive layer can be used to suitably control the voltage of the substrate layer.

Based on the above conclusion, the semiconductor substrate according to claim 1 of the present invention provides a substrate layer, an insulating layer formed on the substrate layer, and a circuit element formed on the insulating layer. A semiconductor layer having a conductive layer on the substrate layer side at the interface between the substrate layer and the insulating layer.

With such a configuration, when a high-frequency circuit is formed in the semiconductor layer, when the voltage of the substrate layer is controlled, the output intensity of the high-frequency signal in the high-frequency circuit is reduced by the current consumption. It is possible to change it while suppressing it, and also change the amount of leakage of the high-frequency signal. For example, when the applied voltage of the substrate layer is increased, the output intensity of the high-frequency signal in the high-frequency circuit increases accordingly. vice versa,
When the applied voltage of the substrate layer is reduced, the output intensity of the high-frequency signal in the high-frequency circuit decreases accordingly.

The conductive layer may be formed at any position on the substrate layer. The conductive layer may be formed near the surface of the substrate layer, that is, near the interface with the insulating layer. Is remarkable.

According to a second aspect of the present invention, in the semiconductor substrate according to the first aspect, the substrate layer has at least one of a surface region within 10 μm from an interface with the insulating layer. 1 [Ω · cm] or more and 100
The conductive layer has a resistivity of [Ω · cm] or less, and has a resistivity of at least 1 [kΩ · cm] in a region deeper than the surface layer region.

As a specific manufacturing method, for example, a substrate layer, an insulating layer, a semiconductor layer in which circuit elements are formed,
In the method for manufacturing a semiconductor substrate having the above, impurity ions are implanted into a surface of the substrate layer which is an interface with the insulating layer so that a low-resistance layer is formed.

The impurity ions may be implanted before or after the insulating layer is formed on the substrate layer. After the formation of the insulating layer, impurity ions are implanted by, for example, an ion implantation method. As a method for implanting impurity ions, a method using an ion implantation method or a diffusion method is suitable for effectively implanting impurity ions.

Further, according to a third aspect of the present invention, in the semiconductor substrate according to the first or second aspect, the substrate layer is made of silicon, and the insulating layer is made of silicon.
The semiconductor layer is made of silicon oxide, and the semiconductor layer is made of silicon.

Further, according to a fourth aspect of the present invention, in the semiconductor substrate according to the first, second or third aspect, the substrate layer is made of n-type silicon. With such a configuration, more n-type carriers are unevenly distributed in the vicinity of the surface of the substrate layer at the interface with the insulating layer than in the substrate layer made of p-type silicon.

On the other hand, a semiconductor device according to a fifth aspect of the present invention is a semiconductor device, comprising: a substrate layer; an insulating layer formed on the substrate layer; and a semiconductor formed on the insulating layer and having a circuit element formed therein. A semiconductor device in which an integrated circuit is formed on the semiconductor layer, wherein a conductive layer is provided on a substrate layer side of an interface between the substrate layer and the insulating layer.

With such a configuration, when the voltage of the substrate layer is controlled via the conductive layer, the output intensity of the high-frequency signal in the integrated circuit can be changed while suppressing the current consumption. Also, the amount of leakage of the high-frequency signal can be changed.

According to a sixth aspect of the present invention, in the semiconductor device according to the fifth aspect, the substrate layer has at least one of a surface region within 10 μm from an interface with the insulating layer. 1 [Ω · cm] or more and 100
The conductive layer has a resistivity of [Ω · cm] or less, and has a resistivity of at least 1 [kΩ · cm] in a region deeper than the surface layer region.

As a specific manufacturing method, for example, a substrate layer, an insulating layer, a semiconductor layer in which circuit elements are formed,
In the method for manufacturing a semiconductor substrate having the above, impurity ions are implanted into a surface of the substrate layer which is an interface with the insulating layer so that a low-resistance layer is formed. At this time, the impurity ions may be implanted immediately below a portion of the semiconductor layer where the high-frequency active element is to be formed, on the surface of the substrate layer which is an interface with the insulating layer.

The impurity ions may be implanted before or after the insulating layer is formed on the substrate layer. After the formation of the insulating layer, impurity ions are implanted by, for example, an ion implantation method. As a method for implanting impurity ions, a method using an ion implantation method or a diffusion method is suitable for effectively implanting impurity ions.

According to a seventh aspect of the present invention, in the semiconductor device of the fifth or sixth aspect, at least a part of the integrated circuit is electrically connected to the conductive layer.

Further, according to an eighth aspect of the present invention, in the semiconductor device according to the seventh aspect, a control voltage is applied to the conductive layer via a through hole penetrating the insulating layer. ing.

According to a ninth aspect of the present invention, in the semiconductor device according to the fifth or sixth aspect, the first lead frame on which the substrate layer is mounted is electrically connected to the first lead frame in a mold resin. The insulated second lead frame is connected with a bonding wire, and a voltage is applied to the substrate layer via the second lead frame.

Further, according to a tenth aspect of the present invention, in the semiconductor device according to the sixth to ninth aspects, the semiconductor device according to any of the sixth to ninth aspects, is provided immediately below a portion of the semiconductor layer where a high-frequency active element is formed. And the conductive layer.

Further, according to an eleventh aspect of the present invention, in the semiconductor device according to the fifth to tenth aspects, the voltage of the substrate layer is controlled to output a high-frequency signal in the integrated circuit. The intensity is controlled.

Further, according to a twelfth aspect of the present invention, in the semiconductor device according to the fifth to eleventh aspects, by controlling the voltage of the substrate layer, a high frequency signal leaks in the integrated circuit. The amount is controlled.

Further, in the semiconductor device according to a thirteenth aspect of the present invention, in the semiconductor device according to the fifth to twelfth aspects, the maximum frequency of a signal handled in the integrated circuit is at least 100 [MHz].

[0031]

Embodiments of the present invention will be described below with reference to the drawings. 1 to 7 are cross-sectional views of a semiconductor device according to the present invention, and FIG. 8 is a concentration profile showing a change in resistivity with respect to a distance from a surface of a substrate layer.

As shown in FIG. 7, a semiconductor device 1 having an SOI structure according to the present invention has a silicon oxide having a semiconductor layer 14 made of silicon (Si) on a substrate layer 10 made of n-type silicon (Si). It is configured by bonding an insulating layer 12 made of (SiO ₂ ). Further, the substrate layer 10
Is formed in the semiconductor layer 14 to control the voltage of the substrate layer 10 through the through hole 13 penetrating the insulating layer 12, and the resistivity of the substrate layer 10 is As shown in FIG. 8, it is about 20 [Ω · cm] near the interface with the insulating layer 12.

First, as shown in FIG. 1, n-type silicon having a resistivity of 1 [kΩ · cm] or more is used as a substrate layer 10 as shown in FIG. 1, and as shown in FIG. On the surface of the substrate layer 10 at the interface with the insulating layer 12,
An appropriate impurity ion is implanted in advance. Specifically, phosphorus (P) is used as an n-type impurity by ion implantation so that the impurity concentration on the surface becomes 2 × 10 ¹⁴ [cm ⁻³ ] at an acceleration voltage of 50 [keV]. Uniformly over the entire surface. As a result, the resistivity near the interface of the substrate layer 10 is about 20 [Ω · cm] from the diagram showing the relationship between the resistivity and the impurity ion concentration shown in FIG.

Next, an insulating layer 12 for bonding is formed on the substrate layer 10. Specifically, as shown in FIG. 3, the surface of the semiconductor layer 14 is heated in an oxidizing atmosphere to form an oxide film as the insulating layer 12. The thickness of the insulating layer 12 is appropriately 0.1 [μm] to 5 [μm], but when a high-frequency circuit is formed on the semiconductor layer 14,
In order to reduce the loss of the high-frequency signal, 1 [μm] to 2
[Μm] is preferred.

Next, as shown in FIG. 4A, the insulating layer 12 formed on the semiconductor layer 14 is bonded on the substrate layer 10 by a bonding method. In this bonding step, heat treatment is performed at 1180 ° C. in order to increase the adhesive strength at the interface between the insulating layer 12 and the substrate layer 10. At this time, impurity ions implanted into the surface of the substrate layer 10 are activated. As a result, carriers are unevenly distributed near the surface, and the resistivity of the substrate layer 10 decreases near the interface as shown in FIG. 4B.

Next, as shown in FIG. 5, the thickness of the semiconductor layer 14 is reduced to 0.1 [μm] by a thinning process. Specifically, first, by mechanical grinding and mechanical chemical polishing,
The thickness of the semiconductor layer 14 is set to 1.0 [μm] to 5.0 [μm].
, And then set to 0.
1 [μm]. Note that the thickness of the semiconductor layer 14 is SO
In order to take advantage of the characteristics of the I substrate, 0.1 [μm] to 2 [μm]
m] is preferred.

Next, as shown in FIG. 6, a through hole 13 is formed in the insulating layer 12 and the semiconductor layer 14, and a conductor such as a wiring material is buried in the through hole 13 to make a conductive state. Next, as shown in FIG. 7, a high-frequency circuit is formed in the semiconductor layer 14. This high-frequency circuit includes a control circuit 15 for controlling the voltage of the substrate layer 10. At this time, the control circuit 15 and the through hole 13 are connected so that the control voltage from the control circuit 15 is applied to the substrate layer 10.

Next, the semiconductor device 1 manufactured as described above will be described.
Next, an embodiment will be described by comparing the presence or absence of a gain adjuster when a high-frequency integrated circuit is formed. FIG. 10 is a diagram illustrating a configuration of an output intensity control circuit using a high-frequency signal.

As shown in FIG. 10A, the output intensity control circuit according to the embodiment of the present invention comprises only an amplifier 100 which receives a high frequency signal, amplifies the signal at a predetermined amplification factor, and outputs the amplified signal. ing. On the other hand, an output intensity control circuit having a gain adjuster as a method usually performed conventionally is shown in FIG.
As shown in FIG. 2B, the control circuit includes a gain adjuster 110 for inputting a high-frequency signal and an amplifier 100 for inputting an output signal from the gain adjuster 110.

First, an output intensity control circuit according to an embodiment of the present invention is formed as a semiconductor device 1, and its characteristics are measured using a signal having a frequency of 1 [GHz] and an intensity of -10 [dBm] as a high-frequency signal. As a result, as shown in FIG. 11, the voltage of the substrate layer 10 was
With the change from [V] to 3 [V], the intensity of the output signal could be changed within a dynamic range of 32 [dB] from -21 [dBm] to 11 [dBm]. At this time, in the amplifier 100, 21 [m
A].

On the other hand, an output intensity control circuit, which is conventionally used as a normal method, is formed as the semiconductor device 1, and
Similarly, as a high frequency signal, a frequency of 1 GHz and an intensity of
When the characteristic was measured using a signal of 10 [dBm], as shown in FIG. 12, the control voltage of the gain adjuster 110 was changed from 0.5 [V] to 2 [V] as shown in FIG. , The intensity of the output signal is changed from −34 [dBm] to −4.
The dynamic range could be changed within a dynamic range of 30 [dB] up to [dBm]. At this time, the amplifier 100
In this case, a current of 21 [mA] is consumed, and the gain adjuster 11
At 0, a current of 9 [mA] was consumed.

Therefore, the output current control circuit that changes the voltage of the substrate layer 10 can reduce the current consumption by 9 mA compared to the output intensity control circuit that changes the control voltage of the gain adjuster 110. As well as being able to take a wide range of dynamic range.

As described above, the output intensity control circuit is constituted only by the amplifier 100 without using the gain adjuster 110,
By controlling the voltage of the substrate layer 10 via the low resistance layer (conductive layer) formed near the interface of the substrate layer 10 by the control circuit 15, the output intensity of the high-frequency signal in the output intensity control circuit is controlled. Therefore, the current consumption can be reduced.

In particular, the substrate layer 10 has a conductive layer having a resistivity of 1 [Ω · cm] or more and 100 [Ω · cm] or less in a surface layer within 10 [μm] from the interface with the insulating layer 12. At the same time, a region deeper than the surface region has a resistivity of at least 1 [kΩ · cm]. Therefore, when a high-frequency active element is formed in the semiconductor layer 14, signal leakage in the high-frequency active element The amount can be reduced, and the current consumption can be reduced.

Further, a stable manufacturing process can be easily established as compared with the case using gallium arsenide, and therefore, the semiconductor device 1 can be manufactured at low cost. The substrate layer 10 is made of silicon, and the insulating layer 12 is
Since the semiconductor layer 14 is made of silicon oxide and the semiconductor layer 14 is made of silicon, the manufacturing cost can be made relatively inexpensive, and the semiconductor layer 14 can be processed by a normal silicon process. it can.

Further, the thickness of the insulating layer 12 is set to 1 [μm].
As described above, the leakage amount of the high-frequency signal in the high-frequency circuit can be further reduced because the thickness is set to 2 [μm] or less. Further, since the substrate layer 10 is made of n-type silicon,
Many n-type carriers can be unevenly distributed near the surface of the substrate layer 10 which is an interface with the insulating layer 12, and when phosphorus is implanted, the resistance near the surface of the substrate layer 10 can be further reduced.

On the other hand, before the insulating layer 12 is formed on the substrate layer 10, phosphorus is implanted into the surface of the substrate layer 10 at the interface with the insulating layer 12. Since a low resistance layer is formed near the surface of the semiconductor layer 14, when a high-frequency active element is formed in the semiconductor layer 14, by controlling the voltage of the substrate layer 10, the gain adjuster 110 is unnecessary and thus consumes current. Without controlling the high-frequency output intensity, the amount of signal leakage can be reduced.

Since phosphorus was implanted into the surface of the substrate layer 10 at the interface with the insulating layer 12 by ion implantation,
Phosphorus can be effectively injected. In the above embodiment, n-type silicon is used as the substrate layer 10. However, the present invention is not limited to this, and p-type silicon may be used. For example, germanium (Ge) or silicon germanium (SiGe) may be used. May be used.

In the above embodiment, silicon oxide is used as the insulating layer 12, but is not limited to this.
As long as a flat film can be formed on the substrate layer 10, for example, aluminum oxide or sapphire may be used.

Further, in the above embodiment, silicon is used as the semiconductor layer 14, but the present invention is not limited to this.
A material obtained by implanting some impurity ions into silicon or a mixed crystal of silicon and another semiconductor material (for example, silicon germanium) may be used.

Further, in the above embodiment, the substrate layer 10 serving as the interface with the insulating layer 12 is formed by ion implantation.
Although phosphorus was injected into the surface of the substrate, the present invention is not limited to this, and phosphorus may be injected by a diffusion method. With this method,
As with the ion implantation method, phosphorus can be implanted effectively.

Further, in the above embodiment, before the insulating layer 12 is formed, phosphorus is implanted into the surface of the substrate layer 10 at the interface with the insulating layer 12, but the invention is not limited to this. After the formation, phosphorus may be implanted into the surface of the substrate layer 10 at the interface with the insulating layer 12. In this case, the accelerating voltage is adjusted so that the phosphorus to be implanted penetrates through the insulating layer 12 and reaches the surface of the substrate layer 10.

Further, in the above embodiment, as a method of forming the insulating layer 12 on the semiconductor layer 14, the surface of the semiconductor layer 14 is heated in an oxidizing atmosphere.
The method is not limited to this, and a normal oxide film forming method may be used.
For example, oxygen ions may be implanted by an ion implantation method.

Further, in the above embodiment, the control circuit 15 is formed on the semiconductor layer 14 and the control circuit 15 applies a voltage to the substrate layer 10 through the through hole 13. Without limitation, as shown in FIG. 13, a lead frame 200 on which the substrate layer 10 is mounted,
The lead frame 210 electrically insulated in the mold resin 220 is connected with the bonding wire 230,
A configuration may be adopted in which a voltage is applied to the substrate layer 10 via the lead frame 210.

Further, in the above-described embodiment, phosphorus is uniformly implanted into the entire surface of the substrate layer 10 which is an interface with the insulating layer 12, but is not limited to this, and as shown in FIG. Phosphorus may be implanted only on the surface of the substrate layer 10 at the interface with the semiconductor layer 14 directly below the portion of the semiconductor layer 14 where the high-frequency active element is formed.

[0056]

As described above, according to the semiconductor substrate of the present invention, when a high-frequency active element is formed on a semiconductor layer, the amount of signal leakage in the high-frequency active element can be reduced. In addition, it is possible to reduce the amount of current consumption and to manufacture the device at low cost.

According to the semiconductor substrate according to the third aspect of the present invention, the manufacturing cost can be made relatively inexpensive, and the semiconductor substrate can be processed by a normal silicon process. The effect of being able to do so is also obtained.

On the other hand, according to the semiconductor device of the present invention,
It is possible to reduce the amount of signal leakage in the integrated circuit, reduce the amount of current consumption, and manufacture the device at low cost.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a semiconductor device 1 for explaining a method of manufacturing the semiconductor device 1.

FIG. 2 is a sectional view of the semiconductor device 1 for explaining a method of manufacturing the semiconductor device 1;

FIG. 3 is a sectional view of the semiconductor device 1 for explaining a method of manufacturing the semiconductor device 1;

FIG. 4 is a cross-sectional view of the semiconductor device 1 for describing a method of manufacturing the semiconductor device 1.

FIG. 5 is a sectional view of the semiconductor device 1 for explaining a method of manufacturing the semiconductor device 1;

FIG. 6 is a cross-sectional view of the semiconductor device 1 for illustrating a method of manufacturing the semiconductor device 1.

FIG. 7 is a cross-sectional view of the semiconductor device 1 for illustrating a method of manufacturing the semiconductor device 1.

FIG. 8 is a concentration profile showing a change in resistivity with respect to a distance from a surface of a substrate layer serving as an interface with an insulating layer.

FIG. 9 is a diagram showing a relationship between resistivity and impurity ion concentration.

FIG. 10 is a diagram showing a configuration of an output intensity control circuit using a high-frequency signal.

FIG. 11 is a diagram illustrating characteristics of an output intensity control circuit as an example of the present invention.

FIG. 12 is a diagram showing characteristics of an output intensity control circuit as a conventional method.

FIG. 13 is a diagram showing a configuration of another embodiment.

FIG. 14 is a diagram for explaining a case where phosphorus is selectively injected.

[Explanation of symbols]

 Reference Signs List 1 semiconductor device 10 substrate layer 12 insulating layer 13 through hole 14 semiconductor layer 15 control circuit 100 amplifier 110 gain adjuster 200, 210 lead frame 220 molding resin 230 bonding wire

Claims (13)

[Claims] 1. A semiconductor substrate, comprising: a substrate layer; an insulating layer formed on the substrate layer; and a semiconductor layer formed on the insulating layer and in which a circuit element is formed. A semiconductor substrate having a conductive layer on a substrate layer side at an interface with the insulating layer. 2. The method according to claim 1, wherein the substrate layer includes at least a part of a surface layer within 10 μm from an interface with the insulating layer.
The conductive layer has a resistivity of [Ω · cm] or more and 100 [Ω · cm] or less, and has a resistivity of at least 1 [kΩ · cm] in a region deeper than the surface layer region. The semiconductor substrate according to claim 1, wherein 3. The semiconductor substrate according to claim 1, wherein said substrate layer is made of silicon, said insulating layer is made of silicon oxide, and said semiconductor layer is made of silicon. 4. The semiconductor substrate according to claim 1, wherein said substrate layer is made of n-type silicon. 5. An integrated circuit comprising: a substrate layer; an insulating layer formed on the substrate layer; and a semiconductor layer formed on the insulating layer and in which circuit elements are formed. Wherein a conductive layer is provided on a substrate layer side of an interface between the substrate layer and the insulating layer. 6. The semiconductor device according to claim 1, wherein the substrate layer has at least a part of a surface layer region within 10 μm from an interface with the insulating layer.
The conductive layer has a resistivity of [Ω · cm] or more and 100 [Ω · cm] or less, and has a resistivity of at least 1 [kΩ · cm] in a region deeper than the surface layer region. 6. The semiconductor device according to claim 5, wherein 7. The semiconductor device according to claim 5, wherein at least a part of the integrated circuit is electrically connected to the conductive layer. 8. The semiconductor device according to claim 7, wherein a control voltage is applied to said conductive layer via a through hole penetrating through said insulating layer. 9. A first lead frame on which the substrate layer is mounted and a second lead frame electrically insulated in a mold resin are connected by bonding wires, and the second lead frame is connected to the first lead frame. 7. A voltage is applied to the substrate layer through the substrate.
13. The semiconductor device according to claim 1. 10. The semiconductor device according to claim 6, wherein the conductive layer is provided immediately below a portion of the semiconductor layer in which the high-frequency active element is formed in the surface layer region. 11. The apparatus according to claim 5, wherein an output intensity of a high-frequency signal in said integrated circuit is controlled by controlling a voltage of said substrate layer.
13. The semiconductor device according to claim 1. 12. The semiconductor device according to claim 5, wherein a leakage amount of a high-frequency signal in the integrated circuit is controlled by controlling a voltage of the substrate layer. 13. The semiconductor device according to claim 5, wherein a maximum frequency of a signal handled in the integrated circuit is at least 100 [MHz].