JPH118074A - Organic electroluminescence device - Google Patents
Organic electroluminescence deviceInfo
- Publication number
- JPH118074A JPH118074A JP9161613A JP16161397A JPH118074A JP H118074 A JPH118074 A JP H118074A JP 9161613 A JP9161613 A JP 9161613A JP 16161397 A JP16161397 A JP 16161397A JP H118074 A JPH118074 A JP H118074A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting layer
- cathode
- organic
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】
【課題】発光層にダメージを与えることが少なく、発光
性能が高い有機エレクトロルミネッセンス（ＥＬ）素子
を生産性良く得る。
【解決手段】陽極２と陰極４との間に、有機発光材料か
らなる発光層３を設けた有機ＥＬ素子であって、陰極４
としての金属電極をメッキ法で形成する。
(57) [Summary] An organic electroluminescence (EL) element which does not damage a light emitting layer and has high light emitting performance can be obtained with high productivity. The organic EL device includes a light emitting layer (3) made of an organic light emitting material between an anode (2) and a cathode (4).
Is formed by a plating method.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、陽極と陰極との間
に有機発光材料からなる発光層を設けた有機エレクトロ
ルミネッセンス素子（以下、有機ＥＬ素子という）に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device (hereinafter referred to as an organic EL device) having a light emitting layer made of an organic light emitting material between an anode and a cathode.
【０００２】[0002]
【従来の技術】従来から知られている有機ＥＬ素子は、
例えば、陽極である透明電極と陰極である金属電極との
間に、有機発光材料からなる発光層が配置されている。
この有機の発光層は一般に、発光材料、電子輸送材料、
正孔輸送材料および色素材料等からなる薄膜により構成
されている。電子輸送材料、正孔輸送材料はそれぞれ別
の層になっている場合もある。2. Description of the Related Art Conventionally known organic EL devices include:
For example, a light emitting layer made of an organic light emitting material is disposed between a transparent electrode serving as an anode and a metal electrode serving as a cathode.
This organic light-emitting layer generally comprises a light-emitting material, an electron transport material,
It is composed of a thin film made of a hole transport material, a dye material, and the like. The electron transporting material and the hole transporting material may be in separate layers.
【０００３】陽極である透明電極の外側にはガラス基板
が配置されており、金属電極から注入された電子と透明
電極から注入された正孔とが発光層中で再結合し、それ
によって生じた励起子が放射失活する過程で光を放ち、
この光が透明電極およびガラス基板を介して外部に放出
される。A glass substrate is disposed outside the transparent electrode serving as the anode, and electrons injected from the metal electrode and holes injected from the transparent electrode are recombined in the light emitting layer, and are generated. Exciton emits light in the process of radiation deactivation,
This light is emitted outside via the transparent electrode and the glass substrate.
【０００４】陽極に用いられる透明電極としては、一般
にＩＴＯ（Ｉｎ2 Ｏ3 −ＳｎＯ2 の複合酸化物）が使用
され、蒸着法やスパッタリング法で形成される（特開平
５−２８８３４、特開平５−１６６４１４等）。陰極に
用いられる金属電極としては、低仕事関数で高電気伝導
の材料、例えばＭｇ−Ａｇ合金（Ａｐｐl ．Ｐｈｙｓ．
Ｌｅｔｔ．，５１９１３（１９８７））、Ｍｇ−Ｉｎ合
金（特開平４−２１２２８７）等が蒸着法やスパッタリ
ング法等で形成される。As a transparent electrode used for the anode, ITO (composite oxide of In 2 O 3 -SnO 2 ) is generally used, and is formed by a vapor deposition method or a sputtering method (JP-A-5-28834, JP-A-5-28534). 166414). As the metal electrode used for the cathode, a material having a low work function and a high electric conductivity, for example, a Mg-Ag alloy (Appl. Phys.
Lett. , 51913 (1987)), an Mg-In alloy (JP-A-4-212287), and the like are formed by a vapor deposition method, a sputtering method, or the like.
【０００５】[0005]
【発明が解決しようとする課題】陰極である金属電極に
要求される特性は、高電気伝導、低仕事関数、化学的安
定性、長期安定性、発光層との接着強度等である。上記
従来法である蒸着法やスパッタリング法では、高価で生
産性が低い真空工程が必要であり、特にスパッタリング
法では下地の発光層にダメージを与えやすい。また、発
光層との接着強度も不充分になりやすく、陰極として高
融点金属の形成が困難である等の問題があった。The characteristics required for the metal electrode serving as the cathode are high electrical conductivity, low work function, chemical stability, long-term stability, adhesive strength with the light emitting layer, and the like. The above-described conventional vapor deposition method and sputtering method require a vacuum step that is expensive and has low productivity. In particular, the sputtering method tends to damage the underlying light emitting layer. In addition, the adhesive strength to the light emitting layer tends to be insufficient, and there is a problem that it is difficult to form a high melting point metal as a cathode.
【０００６】本発明は、上記従来法で形成する金属電極
に比較してより低コストで生産性良く製造でき、下地の
発光層にダメージを与えることなく、接着強度の高い陰
極としての金属電極を提供することを課題とする。According to the present invention, a metal electrode as a cathode having a high adhesive strength can be manufactured at lower cost and with higher productivity than a metal electrode formed by the above-mentioned conventional method, without damaging the underlying light emitting layer. The task is to provide.
【０００７】[0007]
【課題を解決するための手段】本発明は、陽極と陰極と
の間に、有機発光材料からなる発光層を設けた有機ＥＬ
素子において、陰極をメッキ法で形成した金属電極とし
たことを特徴とする有機ＥＬ素子を提供する。さらに、
その発光層が、発光材料の他に、電解質を含む有機ＥＬ
素子を提供する。According to the present invention, there is provided an organic EL having a light emitting layer made of an organic light emitting material between an anode and a cathode.
Provided is an organic EL device, wherein the cathode is a metal electrode formed by a plating method. further,
An organic EL in which the light emitting layer contains an electrolyte in addition to the light emitting material
An element is provided.
【０００８】また、陽極と陰極との間に、有機発光材料
からなる発光層を設けた有機ＥＬ素子の製造方法におい
て、発光層の上に陰極としての金属電極をメッキ法で形
成することを特徴とする有機ＥＬ素子の製造方法を提供
する。さらに、その金属電極の金属が銅、銀、インジウ
ム、ガリウムまたはそれらから選ばれる１種以上の金属
を主成分とする合金である有機ＥＬ素子の製造方法、お
よび、その発光層表面を、物理的粗面化処理により親水
化した後、陰極を形成する有機ＥＬ素子の製造方法を提
供する。Further, in a method of manufacturing an organic EL device in which a light emitting layer made of an organic light emitting material is provided between an anode and a cathode, a metal electrode as a cathode is formed on the light emitting layer by plating. And a method for manufacturing an organic EL element. Further, a method of manufacturing an organic EL device in which the metal of the metal electrode is copper, silver, indium, gallium, or an alloy containing at least one metal selected from the group consisting of: Provided is a method for manufacturing an organic EL device in which a cathode is formed after the surface is made hydrophilic by a surface roughening treatment.
【０００９】[0009]
【発明の実施の形態】本発明では、陽極、発光層、陰極
を有し、必要によりこれに正孔輸送層や電子輸送層を含
む有機ＥＬ素子の陰極としての金属電極を、メッキ法で
形成することにより、従来の陰極と比較して、低コスト
で生産性良く、かつ発光層にダメージを与えることな
く、発光層との接着強度の高い陰極を作ることができ
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, a metal electrode as a cathode of an organic EL device having an anode, a light emitting layer and a cathode, and optionally including a hole transport layer and an electron transport layer, is formed by plating. By doing so, it is possible to produce a cathode having high adhesive strength to the light emitting layer at low cost and with good productivity and without damaging the light emitting layer, as compared with a conventional cathode.
【００１０】本発明における有機ＥＬ素子は、陽極と陰
極との間に発光層を有する。必要によりこれにさらに正
孔輸送層、電子注入層を含むこともできる。これらを含
んでいれば、その他のものを付加的に含んでいても本発
明の有機ＥＬ素子として適用可能である。The organic EL device of the present invention has a light emitting layer between an anode and a cathode. If necessary, this may further include a hole transport layer and an electron injection layer. If these are included, the organic EL element of the present invention can be applied even if other elements are additionally included.
【００１１】図１は、本発明の有機ＥＬ素子の代表例の
正面図である。図１において、１はガラス、セラミッ
ク、プラスチック等の基板、２は陽極、３は発光層、４
は陰極を示す。FIG. 1 is a front view of a typical example of the organic EL device of the present invention. In FIG. 1, 1 is a substrate made of glass, ceramic, plastic or the like, 2 is an anode, 3 is a light emitting layer, 4
Indicates a cathode.
【００１２】本発明の陽極には、一般には透明導電膜が
用いられる。具体的には、ＩＴＯ、ＳｎＯ2 等の透明導
電膜が用いられる。さらには仕事関数の大きいアルミニ
ウム、金などの金属、酸化亜鉛、酸化クロムなどの酸化
物半導体、ホウ化ジルコニウム等の導電性化合物等も使
用できる。In general, a transparent conductive film is used for the anode of the present invention. Specifically, a transparent conductive film such as ITO and SnO 2 is used. Further, metals having a large work function, such as aluminum and gold, oxide semiconductors such as zinc oxide and chromium oxide, and conductive compounds such as zirconium boride can also be used.
【００１３】この陽極の作製方法としては、基板上に、
蒸着法、スパッタリング法等により形成することが一般
的である。陽極の膜厚は、必要とする透明性に依存する
が、可視光の透過率が６０％以上、特には８０％以上、
となるようにすることが好ましい。この場合の膜厚は５
〜１０００ｎｍ、特には１０〜５００ｎｍ、が好まし
い。As a method for producing this anode,
It is common to form by a vapor deposition method, a sputtering method, or the like. The thickness of the anode depends on the required transparency, but the visible light transmittance is 60% or more, particularly 80% or more,
It is preferable that The film thickness in this case is 5
１０００1000 nm, particularly preferably 10-500 nm.
【００１４】発光層は、有機発光材料で構成される。こ
の発光層には必要に応じて正孔輸送材料、色素材料、電
子輸送材料等が含まれる。本発明では、発光層は、発光
層１層自体または必要に応じてそれに積層される正孔輸
送層や電子輸送層を含めたものを意味している。The light emitting layer is made of an organic light emitting material. This light emitting layer contains a hole transporting material, a dye material, an electron transporting material, and the like as necessary. In the present invention, the light emitting layer means a layer including the light emitting layer itself or a hole transporting layer or an electron transporting layer laminated thereon as required.
【００１５】有機発光材料としては、有機ＥＬ素子の発
光層に使用するものとして知られている有機化合物が使
用できる（特開平５−１５９８８２、特開昭６３−２９
５６９５、特開平３−２３１９７０参照）。例えば、ト
リス（８−キノリノール）アルミニウム（以下、ＡＬＱ
という）等が使用できるが、今後開発される有機物であ
っても発光能を示すものであれば採用できる。As the organic light emitting material, an organic compound known to be used for a light emitting layer of an organic EL device can be used (JP-A-5-159882, JP-A-63-29).
5695, JP-A-3-231970). For example, tris (8-quinolinol) aluminum (hereinafter, ALQ)
Etc.) can be used, but any organic substance which will be developed in the future can be employed as long as it exhibits luminous ability.
【００１６】正孔輸送材料としては、従来から光導電材
料の正孔輸送層の有機材料として知られているものや、
有機ＥＬ素子の正孔輸送層に使用するものとして知られ
ているものが使用できる（特開平５−１５９８８２、米
国特許第３５６７４５０号明細書等参照）。例えば、
Ｎ，Ｎ’−ジフェニル−（３−メチルフェニル）−１，
１’−ビフェニル−４，４’−ジアミンを代表とする一
群の化合物や、ポリ−Ｎ−ビニルカルバゾール等のうち
から選択することもできる。また、正孔の注入および電
子の障壁性のいずれかを有するものであれば、今後開発
される材料であってもよい。As the hole transporting material, those conventionally known as an organic material of a hole transporting layer of a photoconductive material,
Any of those known for use in a hole transport layer of an organic EL device can be used (see, for example, JP-A-5-159882 and US Pat. No. 3,567,450). For example,
N, N'-diphenyl- (3-methylphenyl) -1,
It can also be selected from a group of compounds represented by 1'-biphenyl-4,4'-diamine, poly-N-vinylcarbazole and the like. Further, as long as the material has either hole injection or electron barrier properties, a material to be developed in the future may be used.
【００１７】色素材料としては、既知の材料を使用でき
る。例えば、クマリン系色素、スチルベン系色素、オキ
サゾール系色素、ペリレン系色素やアントラセン誘導
体、ナフタセン誘導体、ペリレン誘導体、キナクドリン
誘導体等幅広く使用できる。Known materials can be used as the coloring material. For example, coumarin dyes, stilbene dyes, oxazole dyes, perylene dyes, anthracene derivatives, naphthacene derivatives, perylene derivatives, quinacdrine derivatives and the like can be used widely.
【００１８】この発光層を形成する方法は、それ自体公
知の方法、例えば蒸着法、スピンコート法、キャスト
法、等を採用すればよい。今後、開発される発光層の形
成方法も採用できる。The light emitting layer may be formed by a method known per se, for example, a vapor deposition method, a spin coating method, a casting method, or the like. In the future, a method for forming a light emitting layer to be developed can be adopted.
【００１９】この発光層の陽極側に正孔輸送層を層状に
設けることもできる。この正孔輸送層に用いられる正孔
輸送材料は上記のような公知の正孔輸送層の材料が使用
できる。また、この発光層の陰極側に電子輸送層を設け
ることもできる。この電子輸送層には、例えば、フェニ
ルビフェニルオキサジアゾール等の公知の電子正孔輸送
層の材料が使用できる。A hole transport layer may be provided in a layer on the anode side of the light emitting layer. As the hole transporting material used for the hole transporting layer, the above-described known materials for the hole transporting layer can be used. Further, an electron transporting layer can be provided on the cathode side of the light emitting layer. For the electron transport layer, for example, a known material for the electron hole transport layer such as phenylbiphenyloxadiazole can be used.
【００２０】本発明の陰極の金属電極は、メッキ法によ
って形成される。具体的には、電気メッキ法、無電解メ
ッキ法のいずれでもよい。この陰極の金属の材料は、メ
ッキできる金属であれば使用でき、そのうち、銅、銀、
インジウム、ガリウムまたはそれらから選ばれる１種ま
たは２種以上の金属を主成分とする合金がメッキしやす
く好ましい。この陰極の層の厚みに関しては２０〜２５
０ｎｍ、特には５０〜１５０ｎｍ、程度が好ましい。The metal electrode of the cathode of the present invention is formed by a plating method. Specifically, either an electroplating method or an electroless plating method may be used. The material of the metal of this cathode can be used as long as it can be plated, and among them, copper, silver,
Indium, gallium, or an alloy containing one or more metals selected from the foregoing as a main component is preferable because of easy plating. The thickness of the cathode layer is 20 to 25.
0 nm, especially about 50 to 150 nm, is preferred.
【００２１】また、あらかじめ発光層の表面をプラズマ
処理、ＵＶ処理または電子線処理等の物理的粗面化処理
により粗面化してより親水化することが好ましい。これ
により、発光層上に陰極を均一に形成でき、陰極と発光
層との接着強度も上がる。なお、発光層の表面とは、前
記したように発光層の陰極側に電子輸送層が形成されて
いる場合には、その電子輸送層の表面を意味する。It is preferable that the surface of the light emitting layer is previously roughened by a physical roughening treatment such as plasma treatment, UV treatment or electron beam treatment to make the surface more hydrophilic. Thereby, the cathode can be formed uniformly on the light emitting layer, and the bonding strength between the cathode and the light emitting layer can be increased. The surface of the light emitting layer means the surface of the electron transport layer when the electron transport layer is formed on the cathode side of the light emitting layer as described above.
【００２２】さらに、この発光層中に、あらかじめテト
ラ−ｎ−ブチルアンモニウムテトラフルオロボレート等
の電解質を添加しておくと、陰極と発光層との接着強度
はさらに向上する。また、発光層の表面が疎水性の場合
は、有機溶剤を用いてメッキすることが好ましい。Further, if an electrolyte such as tetra-n-butylammonium tetrafluoroborate is added to the light emitting layer in advance, the adhesive strength between the cathode and the light emitting layer is further improved. When the surface of the light emitting layer is hydrophobic, it is preferable to perform plating using an organic solvent.
【００２３】有機ＥＬ素子の陰極を、本発明のメッキ法
で形成することにより、長期信頼性が高く、画面の輝度
が高い有機ＥＬ素子が得られる。By forming the cathode of the organic EL device by the plating method of the present invention, an organic EL device having high long-term reliability and high screen brightness can be obtained.
【００２４】[0024]
【実施例】実施例により本発明の有機ＥＬ素子について
具体的に説明する。EXAMPLES The organic EL device of the present invention will be specifically described with reference to examples.
【００２５】「例１（実施例）」図１に示すような構成
で有機ＥＬ素子を形成した。まずガラス基板上にスパッ
タリング法により、陽極２としてのＩＴＯ膜を１００ｎ
ｍ積層した。その上に、発光層３として、ポリビニルカ
ルバゾール１２０ｍｇ、２，５−ビス（１−ナフチル）
−１，３，４−オキサジアゾール７０ｍｇ、クマリン６
を６ｍｇ、１，２−ジクロロエタン５ｍｇの混合物の溶
液をスピンコートして、２００ｎｍの膜を形成した。そ
の上に、無電解メッキ法により、銅を１００ｎｍメッキ
して陰極４を形成した。"Example 1 (Example)" An organic EL device was formed with the structure shown in FIG. First, an ITO film as an anode 2 was formed on a glass substrate by sputtering for 100 n.
m. On top of that, 120 mg of polyvinylcarbazole and 2,5-bis (1-naphthyl) were used as the light emitting layer 3.
-1,3,4-oxadiazole 70 mg, coumarin 6
Was spin-coated with a solution of a mixture of 6 mg and 5 mg of 1,2-dichloroethane to form a 200 nm film. Then, copper was plated to a thickness of 100 nm by electroless plating to form a cathode 4.
【００２６】「例２（実施例）」例１と同様の方法で、
陽極２および発光層３を形成した後、周波数１３ＭＨ
ｚ、空気圧２ｍｍＨｇでプラズマ処理を行い、その上
に、例１と同様の方法で陰極４である銅の層を無電解メ
ッキ法により厚さ１００ｎｍ形成した。Example 2 (Example) In the same manner as in Example 1,
After forming the anode 2 and the light emitting layer 3, the frequency is 13 MHz.
Plasma treatment was performed at z and air pressure of 2 mmHg, and a copper layer serving as the cathode 4 was formed thereon to a thickness of 100 nm by an electroless plating method in the same manner as in Example 1.
【００２７】「例３（実施例）」例１と同様の方法で、
陽極２を形成した。発光層３として、例１の組成に、テ
トラ−ｎ−ブチルアンモニウムテトラフルオロボレート
２０ｍｇを加えた混合物を用い、例１と同様の方法で２
００ｎｍの膜を形成した。その後、例２と同様の方法で
プラズマ処理を行い、その上に、例１と同様の方法で銅
の層を無電解メッキ法により厚さ１００ｎｍ形成した。Example 3 (Example) In the same manner as in Example 1,
An anode 2 was formed. As a light emitting layer 3, a mixture obtained by adding 20 mg of tetra-n-butylammonium tetrafluoroborate to the composition of Example 1 was used.
A 00 nm film was formed. Thereafter, plasma treatment was performed in the same manner as in Example 2, and a copper layer was formed thereon by electroless plating to a thickness of 100 nm in the same manner as in Example 1.
【００２８】「例４（比較例）」例１と同様の方法で、
陽極２および発光層３を形成した後、その上に、蒸着法
により、陰極としてのＭｇＡｇ合金の層を１００ｎｍ形
成した。Example 4 (Comparative Example) In the same manner as in Example 1,
After the anode 2 and the light emitting layer 3 were formed, a layer of an MgAg alloy as a cathode was formed thereon to a thickness of 100 nm by an evaporation method.
【００２９】「発光特性試験」上記各例で調製された有
機ＥＬ素子について、発光特性試験を行った。陰極と陽
極間に５ｍＡの直流を流して、輝度が初期値の半分にな
る時間を測定した。この結果を図２に示す。図２におい
て、縦軸は輝度（Ｃｄ／ｍ2 ）を示し、横軸は時間を示
す。図２から、例１〜例３の有機ＥＬ素子はいずれも例
４に較べて、長時間輝度を保つことがわかった。"Emission Characteristics Test" Emission characteristics tests were performed on the organic EL devices prepared in the above examples. A direct current of 5 mA was passed between the cathode and the anode, and the time during which the luminance became half of the initial value was measured. The result is shown in FIG. In FIG. 2, the vertical axis indicates luminance (Cd / m 2 ), and the horizontal axis indicates time. From FIG. 2, it was found that all of the organic EL elements of Examples 1 to 3 maintain luminance for a longer time than that of Example 4.
【００３０】[0030]
【発明の効果】本発明では、有機ＥＬ素子の陰極として
の金属電極を、メッキ法により形成したものであり、こ
れにより従来技術に比較して、発光層にダメージを与え
ることが少なく、接着強度の高い陰極が得られ、初期お
よび長期の発光性能が高い有機ＥＬ素子が得られる。According to the present invention, a metal electrode as a cathode of an organic EL device is formed by plating, which causes less damage to a light emitting layer and adhesion strength as compared with the prior art. Thus, an organic EL device having high initial and long-term emission performance can be obtained.
【００３１】本発明によれば、従来の蒸着法やスパッタ
リング法により形成された陰極に比較して、高輝度が得
られ、素子作製の安定性が増し、連続発光試験による輝
度の減衰率が小さくなる等々の利点を有する。本発明
は、本発明の効果を損しない範囲内で、種々の応用が可
能である。According to the present invention, as compared with a cathode formed by a conventional vapor deposition method or sputtering method, a higher luminance is obtained, the stability of device production is increased, and the luminance decay rate in a continuous light emission test is smaller. And so on. The present invention can be applied to various applications within a range that does not impair the effects of the present invention.
【図１】本発明の有機ＥＬ素子の代表例の正面図。FIG. 1 is a front view of a typical example of an organic EL device of the present invention.
【図２】例１〜例４の輝度特性のグラフ。FIG. 2 is a graph of luminance characteristics of Examples 1 to 4.
１：基板 ２：陽極 ３：発光層 ４：陰極 1: substrate 2: anode 3: light emitting layer 4: cathode
Claims (5)
る発光層を設けた有機エレクトロルミネッセンス素子に
おいて、陰極をメッキ法で形成した金属電極としたこと
を特徴とする有機エレクトロルミネッセンス素子。1. An organic electroluminescent device having a light emitting layer made of an organic light emitting material between an anode and a cathode, wherein the cathode is a metal electrode formed by plating.
請求項１記載の有機エレクトロルミネッセンス素子。2. The organic electroluminescent device according to claim 1, wherein the light emitting layer contains an electrolyte in addition to the light emitting material.
る発光層を設けた有機エレクトロルミネッセンス素子の
製造方法において、発光層の上に陰極としての金属電極
をメッキ法で形成することを特徴とする有機エレクトロ
ルミネッセンス素子の製造方法。3. A method for manufacturing an organic electroluminescent device having a light emitting layer made of an organic light emitting material between an anode and a cathode, wherein a metal electrode as a cathode is formed on the light emitting layer by a plating method. A method for producing an organic electroluminescent device, characterized by:
リウムまたはそれらから選ばれる１種以上の金属を主成
分とする合金である請求項３記載の製造方法。4. The method according to claim 3, wherein the metal of the metal electrode is copper, silver, indium, gallium or an alloy containing at least one metal selected from the group consisting of copper, silver, indium and gallium.
水化した後、陰極を形成する請求項３または４記載の製
造方法。5. The method according to claim 3, wherein the cathode is formed after the surface of the light emitting layer is hydrophilized by physical surface roughening treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16161397A JP3868061B2 (en) | 1997-06-18 | 1997-06-18 | Organic electroluminescence device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16161397A JP3868061B2 (en) | 1997-06-18 | 1997-06-18 | Organic electroluminescence device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH118074A true JPH118074A (en) | 1999-01-12 |
| JP3868061B2 JP3868061B2 (en) | 2007-01-17 |
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ID=15738503
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16161397A Expired - Fee Related JP3868061B2 (en) | 1997-06-18 | 1997-06-18 | Organic electroluminescence device |
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| Country | Link |
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| JP (1) | JP3868061B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001063975A1 (en) * | 2000-02-25 | 2001-08-30 | Seiko Epson Corporation | Organic el device and method of manufacture thereof |
| JP2002100482A (en) * | 2000-09-20 | 2002-04-05 | Mitsubishi Chemicals Corp | Organic electroluminescent device |
| EP1731585A2 (en) | 1998-12-25 | 2006-12-13 | Konica Corporation | Electroluminescent material and electroluminescent element |
| EP1983592A1 (en) * | 2007-04-17 | 2008-10-22 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Method for manufacturing an electrode |
| WO2011094563A1 (en) * | 2010-01-29 | 2011-08-04 | Lock Haven University Of Pennsylvania | Method for deposition of cathodes for polymer optoelectronic devices |
-
1997
- 1997-06-18 JP JP16161397A patent/JP3868061B2/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1731585A2 (en) | 1998-12-25 | 2006-12-13 | Konica Corporation | Electroluminescent material and electroluminescent element |
| US7427832B2 (en) | 2000-02-25 | 2008-09-23 | Seiko Epson Corporation | Organic electroluminescence device and manufacturing method therefor |
| US6869635B2 (en) | 2000-02-25 | 2005-03-22 | Seiko Epson Corporation | Organic electroluminescence device and manufacturing method therefor |
| EP1191823A4 (en) * | 2000-02-25 | 2006-04-05 | Seiko Epson Corp | ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD FOR THE PRODUCTION THEREOF |
| JP4144687B2 (en) * | 2000-02-25 | 2008-09-03 | セイコーエプソン株式会社 | Manufacturing method of organic EL device |
| WO2001063975A1 (en) * | 2000-02-25 | 2001-08-30 | Seiko Epson Corporation | Organic el device and method of manufacture thereof |
| US7898170B2 (en) | 2000-02-25 | 2011-03-01 | Seiko Epson Corporation | Organic electroluminescence device and manufacturing method therefor |
| JP2002100482A (en) * | 2000-09-20 | 2002-04-05 | Mitsubishi Chemicals Corp | Organic electroluminescent device |
| EP1983592A1 (en) * | 2007-04-17 | 2008-10-22 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Method for manufacturing an electrode |
| WO2008127111A1 (en) * | 2007-04-17 | 2008-10-23 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Method for manufacturing an electrode |
| JP2010530026A (en) * | 2007-04-17 | 2010-09-02 | ネーデルランドセ オルガニサティエ フォール トエゲパストナトールヴェテンシャッペリク オンデルゾエク ティエヌオー | Method for manufacturing an electrode |
| US8227293B2 (en) | 2007-04-17 | 2012-07-24 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Method for manufacturing an electrode |
| WO2011094563A1 (en) * | 2010-01-29 | 2011-08-04 | Lock Haven University Of Pennsylvania | Method for deposition of cathodes for polymer optoelectronic devices |
| US8329505B2 (en) | 2010-01-29 | 2012-12-11 | Lock Haven University Of Pennsylvania | Method for deposition of cathodes for polymer optoelectronic devices |
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