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JPS4923075B1 - - Google Patents

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Publication number
JPS4923075B1
JPS4923075B1 JP4430068A JP4430068A JPS4923075B1 JP S4923075 B1 JPS4923075 B1 JP S4923075B1 JP 4430068 A JP4430068 A JP 4430068A JP 4430068 A JP4430068 A JP 4430068A JP S4923075 B1 JPS4923075 B1 JP S4923075B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4430068A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4430068A priority Critical patent/JPS4923075B1/ja
Priority to US165091A priority patent/US3894893A/en
Publication of JPS4923075B1 publication Critical patent/JPS4923075B1/ja
Pending legal-status Critical Current

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  • Element Separation (AREA)
JP4430068A 1968-03-30 1968-06-26 Pending JPS4923075B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4430068A JPS4923075B1 (en) 1968-06-26 1968-06-26
US165091A US3894893A (en) 1968-03-30 1971-07-23 Method for the production of monocrystal-polycrystal semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4430068A JPS4923075B1 (en) 1968-06-26 1968-06-26

Publications (1)

Publication Number Publication Date
JPS4923075B1 true JPS4923075B1 (en) 1974-06-13

Family

ID=12687638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4430068A Pending JPS4923075B1 (en) 1968-03-30 1968-06-26

Country Status (1)

Country Link
JP (1) JPS4923075B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282892A (en) * 2002-03-08 2003-10-03 Internatl Business Mach Corp <Ibm> Method and structure of low capacitance ESD resistant diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282892A (en) * 2002-03-08 2003-10-03 Internatl Business Mach Corp <Ibm> Method and structure of low capacitance ESD resistant diode

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