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JPS5513924A - Semiconductor photoelectronic conversion device - Google Patents

Semiconductor photoelectronic conversion device

Info

Publication number
JPS5513924A
JPS5513924A JP8657278A JP8657278A JPS5513924A JP S5513924 A JPS5513924 A JP S5513924A JP 8657278 A JP8657278 A JP 8657278A JP 8657278 A JP8657278 A JP 8657278A JP S5513924 A JPS5513924 A JP S5513924A
Authority
JP
Japan
Prior art keywords
layer
substrate
incident light
gate region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8657278A
Other languages
Japanese (ja)
Other versions
JPS6250992B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP8657278A priority Critical patent/JPS5513924A/en
Priority to US06/039,445 priority patent/US4427990A/en
Publication of JPS5513924A publication Critical patent/JPS5513924A/en
Publication of JPS6250992B2 publication Critical patent/JPS6250992B2/ja
Priority to US07/332,441 priority patent/US5019876A/en
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To derive the intensity of the incident light as an electric signal by varying an effective gate voltage with storing a carrier inonized by the incident light in the gate region of a static induction transistor SIT used for a light senser.
CONSTITUTION: A n- epi-layer 2 and a p+ gate region 3 are provided on a n+Si substrate 1 and a n- epi-layer 4 and a thin n+-layer 5 are laminated on the substrate 1. An electrode 15 and 11 are formed on the full back surface of the substrate 1 and the upper circumference face of the layer 5. The n+-layer 5 is drained to the substrate 1. The n+-layer 5 having the thickness of 0.5μm about is used to prevent attenuation of the incident light, the n--layer 4 having a high resistance against a tension by reducing the density of the impurity, has the thickness of 10μm about to permit the major of the positive holes inonized by the incident light to reach to the gate region. The distance between the meshes on the gate region is set less than 5μm about to form the partition having the sufficient potential by the deflation layer in a multichannel. According to such a composition, the gate is made in a capacity bonding type particularly, the operational range is extended, the device can be operated effective for the light detection over a wide range of intensity.
COPYRIGHT: (C)1980,JPO&Japio
JP8657278A 1978-07-14 1978-07-14 Semiconductor photoelectronic conversion device Granted JPS5513924A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8657278A JPS5513924A (en) 1978-07-14 1978-07-14 Semiconductor photoelectronic conversion device
US06/039,445 US4427990A (en) 1978-07-14 1979-05-15 Semiconductor photo-electric converter with insulated gate over p-n charge storage region
US07/332,441 US5019876A (en) 1978-07-14 1989-04-04 Semiconductor photo-electric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8657278A JPS5513924A (en) 1978-07-14 1978-07-14 Semiconductor photoelectronic conversion device

Publications (2)

Publication Number Publication Date
JPS5513924A true JPS5513924A (en) 1980-01-31
JPS6250992B2 JPS6250992B2 (en) 1987-10-28

Family

ID=13890720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8657278A Granted JPS5513924A (en) 1978-07-14 1978-07-14 Semiconductor photoelectronic conversion device

Country Status (1)

Country Link
JP (1) JPS5513924A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893386A (en) * 1981-11-30 1983-06-03 Semiconductor Res Found Semiconductor photoelectric conversion device
JPS5895877A (en) * 1981-12-01 1983-06-07 Semiconductor Res Found Semiconductor photoelectric conversion device
DE3344637A1 (en) * 1982-12-11 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi PHOTOELECTRIC SEMICONDUCTOR CONVERTER
JPS59207640A (en) * 1983-05-11 1984-11-24 Hitachi Ltd Semiconductor device
JP2011040445A (en) * 2009-08-07 2011-02-24 Hitachi Ltd Semiconductor photodiode device, and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4988492A (en) * 1972-09-22 1974-08-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4988492A (en) * 1972-09-22 1974-08-23

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893386A (en) * 1981-11-30 1983-06-03 Semiconductor Res Found Semiconductor photoelectric conversion device
JPS5895877A (en) * 1981-12-01 1983-06-07 Semiconductor Res Found Semiconductor photoelectric conversion device
DE3344637A1 (en) * 1982-12-11 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi PHOTOELECTRIC SEMICONDUCTOR CONVERTER
JPS59207640A (en) * 1983-05-11 1984-11-24 Hitachi Ltd Semiconductor device
JP2011040445A (en) * 2009-08-07 2011-02-24 Hitachi Ltd Semiconductor photodiode device, and manufacturing method thereof

Also Published As

Publication number Publication date
JPS6250992B2 (en) 1987-10-28

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