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JPS55130169A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS55130169A
JPS55130169A JP3687279A JP3687279A JPS55130169A JP S55130169 A JPS55130169 A JP S55130169A JP 3687279 A JP3687279 A JP 3687279A JP 3687279 A JP3687279 A JP 3687279A JP S55130169 A JPS55130169 A JP S55130169A
Authority
JP
Japan
Prior art keywords
drain
gate
layer
insulating film
gate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3687279A
Other languages
Japanese (ja)
Inventor
Kazuhiro Komori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3687279A priority Critical patent/JPS55130169A/en
Publication of JPS55130169A publication Critical patent/JPS55130169A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To enhance the withstand voltage of a semiconductor device by oxidizing a polysilicon layer to form a gate insulating film to alleviate electic field concentration in the vicinity of a drain. CONSTITUTION:A first gate layer 14 off-set from the drain side on a gate insulating film 12 is formed thereon, and a polysilicon layer is then coated on the portion in the vicinity of the drain of the gate insulating film 12 and on the gate layer 14. The polysilicon layer is then oxidized to form an interlayer insulating and gate insulating film 20. A second gate layer 22 is then formed on the portion in the vicinity of a drain at least from the film 20. The layer 22 is then patterned, and source and drain diffusing openings are formed at the films 20 and 12, respectively, suitable doner impurity is selectively diffused through the openings in the substrate 10 to form by self-matching an N<+>-type source region 24 and an N<+>-type drain region 26 at the gate.
JP3687279A 1979-03-30 1979-03-30 Method of fabricating semiconductor device Pending JPS55130169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3687279A JPS55130169A (en) 1979-03-30 1979-03-30 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3687279A JPS55130169A (en) 1979-03-30 1979-03-30 Method of fabricating semiconductor device

Publications (1)

Publication Number Publication Date
JPS55130169A true JPS55130169A (en) 1980-10-08

Family

ID=12481867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3687279A Pending JPS55130169A (en) 1979-03-30 1979-03-30 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS55130169A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888191B2 (en) 2000-11-27 2005-05-03 Sharp Kabushiki Kaisha Semiconductor device and fabrication process therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509385A (en) * 1973-05-22 1975-01-30
JPS535580A (en) * 1976-07-02 1978-01-19 Mitsubishi Electric Corp Field effect type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509385A (en) * 1973-05-22 1975-01-30
JPS535580A (en) * 1976-07-02 1978-01-19 Mitsubishi Electric Corp Field effect type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888191B2 (en) 2000-11-27 2005-05-03 Sharp Kabushiki Kaisha Semiconductor device and fabrication process therefor

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