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JPS5587452A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5587452A
JPS5587452A JP16316078A JP16316078A JPS5587452A JP S5587452 A JPS5587452 A JP S5587452A JP 16316078 A JP16316078 A JP 16316078A JP 16316078 A JP16316078 A JP 16316078A JP S5587452 A JPS5587452 A JP S5587452A
Authority
JP
Japan
Prior art keywords
chip
mark
indexing
read out
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16316078A
Other languages
Japanese (ja)
Inventor
Takeari Uema
Minoru Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16316078A priority Critical patent/JPS5587452A/en
Publication of JPS5587452A publication Critical patent/JPS5587452A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54413—Marks applied to semiconductor devices or parts comprising digital information, e.g. bar codes, data matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/5448—Located on chip prior to dicing and remaining on chip after dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number

Landscapes

  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To improve the manufacturing efficiency by a method wherein an indexing mark is provided on each chip inside one wafer and read out by an electron beam irradiation to identify the chip.
CONSTITUTION: In addition to a wafer indexing mark 5, each different chip indexing mark 4 is formed inside each chip 3. The mark 4 is shown in a binary code indicating the presence of a member 7, which may be a metal film or an insulating film having the different reflectance from that of the groove or surroundings. Each indexing signal is read out with an electron beam exposed over the mark and the corresponding acceptable or defective data are read out from the storage through a computer. By determining the necessity of applying the production process to the chip, the loss resulted in applying the production process to the defective chip can be avoided.
COPYRIGHT: (C)1980,JPO&Japio
JP16316078A 1978-12-26 1978-12-26 Manufacture of semiconductor device Pending JPS5587452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16316078A JPS5587452A (en) 1978-12-26 1978-12-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16316078A JPS5587452A (en) 1978-12-26 1978-12-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5587452A true JPS5587452A (en) 1980-07-02

Family

ID=15768363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16316078A Pending JPS5587452A (en) 1978-12-26 1978-12-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587452A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS565021U (en) * 1979-06-20 1981-01-17
JPS56162813A (en) * 1981-04-27 1981-12-15 Nachi Fujikoshi Corp Solenoid
JPS5727042A (en) * 1980-07-25 1982-02-13 Hitachi Ltd Inspecting method for wafer
JPS5957442A (en) * 1982-09-27 1984-04-03 Fujitsu Ltd Selecting method for chip of integrated circuit
JPS59125636A (en) * 1982-12-28 1984-07-20 Fujitsu Ltd Integrated circuit testing equipment and method
JPS6016415A (en) * 1983-07-08 1985-01-28 Seiko Epson Corp semiconductor equipment
JPS61142734A (en) * 1985-12-16 1986-06-30 Hitachi Ltd semiconductor equipment
JP2007250650A (en) * 2006-03-14 2007-09-27 Sharp Corp Nitride semiconductor laser device and manufacturing method thereof
WO2015055600A1 (en) * 2013-10-16 2015-04-23 Koninklijke Philips N.V. Compact laser device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS565021U (en) * 1979-06-20 1981-01-17
JPS5727042A (en) * 1980-07-25 1982-02-13 Hitachi Ltd Inspecting method for wafer
JPS56162813A (en) * 1981-04-27 1981-12-15 Nachi Fujikoshi Corp Solenoid
JPS5957442A (en) * 1982-09-27 1984-04-03 Fujitsu Ltd Selecting method for chip of integrated circuit
JPS59125636A (en) * 1982-12-28 1984-07-20 Fujitsu Ltd Integrated circuit testing equipment and method
JPS6016415A (en) * 1983-07-08 1985-01-28 Seiko Epson Corp semiconductor equipment
JPS61142734A (en) * 1985-12-16 1986-06-30 Hitachi Ltd semiconductor equipment
US7804878B2 (en) 2006-03-14 2010-09-28 Sharp Kabushiki Kaisha Nitride semiconductor laser device and method of producing the same
JP2007250650A (en) * 2006-03-14 2007-09-27 Sharp Corp Nitride semiconductor laser device and manufacturing method thereof
US8059691B2 (en) 2006-03-14 2011-11-15 Sharp Kabushiki Kaisha Nitride semiconductor laser device and method of producing the same
US8124431B2 (en) 2006-03-14 2012-02-28 Sharp Kabushiki Kaisha Nitride semiconductor laser device and method of producing the same
WO2015055600A1 (en) * 2013-10-16 2015-04-23 Koninklijke Philips N.V. Compact laser device
CN105637634A (en) * 2013-10-16 2016-06-01 皇家飞利浦有限公司 Compact laser device
US20160254640A1 (en) * 2013-10-16 2016-09-01 Koninklijke Philips N.V. Compact laser device
US10116119B2 (en) 2013-10-16 2018-10-30 Koninklijke Philips N.V. Compact laser device
US10707646B2 (en) 2013-10-16 2020-07-07 Trumpf Photonic Components Gmbh Compact laser device

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