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JPS56155635A - Apparatus for oxide film growth in vacuum cvd process - Google Patents

Apparatus for oxide film growth in vacuum cvd process

Info

Publication number
JPS56155635A
JPS56155635A JP5970980A JP5970980A JPS56155635A JP S56155635 A JPS56155635 A JP S56155635A JP 5970980 A JP5970980 A JP 5970980A JP 5970980 A JP5970980 A JP 5970980A JP S56155635 A JPS56155635 A JP S56155635A
Authority
JP
Japan
Prior art keywords
feed nozzles
oxide film
reactive gas
oxygen
gas feed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5970980A
Other languages
Japanese (ja)
Other versions
JPS6217852B2 (en
Inventor
Hidetomo Doi
Masayuki Kitano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5970980A priority Critical patent/JPS56155635A/en
Publication of JPS56155635A publication Critical patent/JPS56155635A/en
Publication of JPS6217852B2 publication Critical patent/JPS6217852B2/ja
Granted legal-status Critical Current

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  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To control the thickness of an oxide film with high accuracy for the production of a semiconductive wafer having a predetermined diffused sheet resistance with ease, by providing a reaction cylinder with a plurality of oxygen feed nozzles corresponding to reactive gas feed nozzles.
CONSTITUTION: An apparatus 28 for the growth of an oxide film in a vacuum CVD process includes a plurality of reactive gas feed nozzles 21 at the upper periphery of a reaction cylinder 20, and a plurality of oxygen feed nozzles 22 at the lower perifery facing the reactive gas feed nozzles 21. A semiconductive wafer 26 is mounted on a boat 27. Under a predetermined reduced pressure, a gaseous mixture 29 of diborane B2H6 and monosilane SiH4 is fed through the reactive gas feed nozzles 21, while oxygen gas 30 is fed through the oxygen feed nozzles 22, to form an oxide film. Owing to this arrangement, a reaction speed is maintained uniform over the whole length of the reaction cylinder 20, so that the thickness of the formed oxide film is made uniform. Consequently, its diffused sheet resistance can be controlled with very high accuracy.
COPYRIGHT: (C)1981,JPO&Japio
JP5970980A 1980-05-06 1980-05-06 Apparatus for oxide film growth in vacuum cvd process Granted JPS56155635A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5970980A JPS56155635A (en) 1980-05-06 1980-05-06 Apparatus for oxide film growth in vacuum cvd process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5970980A JPS56155635A (en) 1980-05-06 1980-05-06 Apparatus for oxide film growth in vacuum cvd process

Publications (2)

Publication Number Publication Date
JPS56155635A true JPS56155635A (en) 1981-12-01
JPS6217852B2 JPS6217852B2 (en) 1987-04-20

Family

ID=13121004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5970980A Granted JPS56155635A (en) 1980-05-06 1980-05-06 Apparatus for oxide film growth in vacuum cvd process

Country Status (1)

Country Link
JP (1) JPS56155635A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6186933U (en) * 1984-11-13 1986-06-07
JP2005311301A (en) * 2004-03-24 2005-11-04 Tokyo Electron Ltd Process for oxidizing object, oxidation apparatus and storage medium

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54125974A (en) * 1978-03-24 1979-09-29 Hitachi Ltd Low-tension cvd device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54125974A (en) * 1978-03-24 1979-09-29 Hitachi Ltd Low-tension cvd device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6186933U (en) * 1984-11-13 1986-06-07
JP2005311301A (en) * 2004-03-24 2005-11-04 Tokyo Electron Ltd Process for oxidizing object, oxidation apparatus and storage medium

Also Published As

Publication number Publication date
JPS6217852B2 (en) 1987-04-20

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