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JPS562671A - Manufacture of semiconductor diaphragm - Google Patents

Manufacture of semiconductor diaphragm

Info

Publication number
JPS562671A
JPS562671A JP7811579A JP7811579A JPS562671A JP S562671 A JPS562671 A JP S562671A JP 7811579 A JP7811579 A JP 7811579A JP 7811579 A JP7811579 A JP 7811579A JP S562671 A JPS562671 A JP S562671A
Authority
JP
Japan
Prior art keywords
region
polycrystalline
layer
substrate
pressure sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7811579A
Other languages
Japanese (ja)
Inventor
Tamotsu Tominaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP7811579A priority Critical patent/JPS562671A/en
Publication of JPS562671A publication Critical patent/JPS562671A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Pressure Sensors (AREA)

Abstract

PURPOSE:To obtain a pressure sensitive region which has high accuracy in thickness by a method wherein on a region of a semicondcutor substrate on which a pressure sensitive region is to be built a stopper film is formed and a semiconductor layer is formed by epitaxial growth all over the surface and a polycrystalline semiconductor layer is formed on the stopper film and solely polycrystalline layer is removed by etching. CONSTITUTION:A surface 12 on an N-type Si substrate 11 is polished to be flat as mirrors, and a stopper film 13 which is composed of Si3N4 etc. which are insoluble in etching solution for Si is provided corresponding to the region on which a pressure sensitive region is to be built, and over all surface of them an Si layer 14 which has N-type impurity is grown by epitaxial growth and on a polycrystalline Si layer 15 is grown on the film 13. Next a back surface 12' of the substrate 11 is polished to be changed a new back surface 12'' and it is polished to be flat as mirrors, and an SiO2 film 17 is applied and an opening is perforated on it corresponding to the polycrystalline layer 15 and a P-type resistance region 16 is grown by diffusion within the substrate 11. And an Al wiring 18 is applied on the region 16 and wax 19 is applied over it, and utilizing phenomenon by which polycrystalline material is etched away more rapidly the polycrystalline layer 15 is soley etched away, and the exposed substrate 11 is used as a pressure sensitive region 20.
JP7811579A 1979-06-22 1979-06-22 Manufacture of semiconductor diaphragm Pending JPS562671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7811579A JPS562671A (en) 1979-06-22 1979-06-22 Manufacture of semiconductor diaphragm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7811579A JPS562671A (en) 1979-06-22 1979-06-22 Manufacture of semiconductor diaphragm

Publications (1)

Publication Number Publication Date
JPS562671A true JPS562671A (en) 1981-01-12

Family

ID=13652879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7811579A Pending JPS562671A (en) 1979-06-22 1979-06-22 Manufacture of semiconductor diaphragm

Country Status (1)

Country Link
JP (1) JPS562671A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835982A (en) * 1981-08-28 1983-03-02 Hitachi Ltd Manufacture of semiconductor pressure sensor
JPS60201665A (en) * 1984-03-26 1985-10-12 Nippon Denso Co Ltd Pressure-electricity converter
JPS60253279A (en) * 1984-05-29 1985-12-13 Toyota Central Res & Dev Lab Inc Measuring instrument for strain in semiconductor
JPS6476756A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor integrated circuit device and manufacture thereof
US5356829A (en) * 1990-11-09 1994-10-18 Robert Bosch Gmbh Silicon device including a pn-junction acting as an etch-stop in a silicon substrate
US5471086A (en) * 1992-09-29 1995-11-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having piezo resistance
US6580605B1 (en) 1999-09-06 2003-06-17 Sony Computer Entertainment, Inc. Electronic equipment and housing for accommodating the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835982A (en) * 1981-08-28 1983-03-02 Hitachi Ltd Manufacture of semiconductor pressure sensor
JPS60201665A (en) * 1984-03-26 1985-10-12 Nippon Denso Co Ltd Pressure-electricity converter
JPS60253279A (en) * 1984-05-29 1985-12-13 Toyota Central Res & Dev Lab Inc Measuring instrument for strain in semiconductor
JPS6476756A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor integrated circuit device and manufacture thereof
US5356829A (en) * 1990-11-09 1994-10-18 Robert Bosch Gmbh Silicon device including a pn-junction acting as an etch-stop in a silicon substrate
US5471086A (en) * 1992-09-29 1995-11-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having piezo resistance
US6580605B1 (en) 1999-09-06 2003-06-17 Sony Computer Entertainment, Inc. Electronic equipment and housing for accommodating the same

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