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JPS5650553A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5650553A
JPS5650553A JP12615579A JP12615579A JPS5650553A JP S5650553 A JPS5650553 A JP S5650553A JP 12615579 A JP12615579 A JP 12615579A JP 12615579 A JP12615579 A JP 12615579A JP S5650553 A JPS5650553 A JP S5650553A
Authority
JP
Japan
Prior art keywords
lands
type semiconductor
voltage
diffused
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12615579A
Other languages
Japanese (ja)
Inventor
Haruo Tamada
Osamu Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12615579A priority Critical patent/JPS5650553A/en
Publication of JPS5650553A publication Critical patent/JPS5650553A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To accurately retain the voltage dividing ratio of a voltage divider by retaining the bias voltage of a diffused resistor in a semiconductor device having the voltage divider using a diffused resistor. CONSTITUTION:n Type semiconductor regions (lands) 12a, 12b are formed on a p type semiconductor substrate 10, and p type semiconductor layers 14, 16 are formed on the respective lands 12a, 12b. An insulating film such as silicon dioxide or the like is coated onth surface of the substrate, and terminal electrodes 30, 32, 28 are mounted through holes opened at the insulating film. p Type semiconductor layers 14, 16 become diffused resistors, and a voltage divider is formed of an electrode 30 as an input terminal, an electrode 28 as a common grounding terminal, and an electrode 32 as an output terminal. The contact layers 18a, 18b of the lands 12a, 12b are respectively connected to high voltage side terminals of the diffused resistors 14, 16, and p-n junction formed of the lands and the diffused resistors is reversely biased. Accordingly, the ratio of the bias voltages at both the diffused resistors is retained constantly even if the input terminal voltage is varied.
JP12615579A 1979-09-29 1979-09-29 Semiconductor device Pending JPS5650553A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12615579A JPS5650553A (en) 1979-09-29 1979-09-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12615579A JPS5650553A (en) 1979-09-29 1979-09-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5650553A true JPS5650553A (en) 1981-05-07

Family

ID=14928029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12615579A Pending JPS5650553A (en) 1979-09-29 1979-09-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5650553A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3502713A1 (en) * 1985-01-28 1986-07-31 Robert Bosch Gmbh, 7000 Stuttgart Monolithically integrated circuit with lower-level tunnelling
JPS63104462A (en) * 1986-10-22 1988-05-09 Seiko Epson Corp Integrated circuit for voltage regulator
WO1990005995A1 (en) * 1988-11-22 1990-05-31 Seiko Epson Corporation Semiconductor device
JPH0423355A (en) * 1990-05-15 1992-01-27 Hitachi Ltd Semiconductor device
US5428242A (en) * 1988-11-22 1995-06-27 Seiko Epson Corporation Semiconductor devices with shielding for resistance elements

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3502713A1 (en) * 1985-01-28 1986-07-31 Robert Bosch Gmbh, 7000 Stuttgart Monolithically integrated circuit with lower-level tunnelling
JPS63104462A (en) * 1986-10-22 1988-05-09 Seiko Epson Corp Integrated circuit for voltage regulator
WO1990005995A1 (en) * 1988-11-22 1990-05-31 Seiko Epson Corporation Semiconductor device
US5428242A (en) * 1988-11-22 1995-06-27 Seiko Epson Corporation Semiconductor devices with shielding for resistance elements
JPH0423355A (en) * 1990-05-15 1992-01-27 Hitachi Ltd Semiconductor device

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