JPS5661733A - Field emission cathode and its manufacture - Google Patents
Field emission cathode and its manufactureInfo
- Publication number
- JPS5661733A JPS5661733A JP13641079A JP13641079A JPS5661733A JP S5661733 A JPS5661733 A JP S5661733A JP 13641079 A JP13641079 A JP 13641079A JP 13641079 A JP13641079 A JP 13641079A JP S5661733 A JPS5661733 A JP S5661733A
- Authority
- JP
- Japan
- Prior art keywords
- field emission
- ambient
- oxygen gas
- emitted
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 3
- 229910001882 dioxygen Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000000523 sample Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
Landscapes
- Cold Cathode And The Manufacture (AREA)
Abstract
PURPOSE:To take out large probe current stably by adsorbing a particular metal through oxygen within the depth of mono atomic layer on the surface of area where electrons are emitted from a needle cathode. CONSTITUTION:In a vacuum container ambient where the field emission can be performed, at least one metal selected from Cr, Al, Ce, Mg, Ti, Si is deposited on the surface of area where at least the electron is emitted from a needle electrode 1 with the depth approximately same with that of mono atomic layer. Thereafter proper amount of oxygen gas is provided into the vacuum ambient to adsorb the oxygen gas with the depth approximately same with that of monomolecular layer on the metallic monomolecular layer, then the oxygen gas is evacuated to return to the ambient where the field emission can be performed. Thereafter the needle cathode 1 is heated for 10-60sec under the temperature range of 1,300-1,500 deg.C.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13641079A JPS5661733A (en) | 1979-10-24 | 1979-10-24 | Field emission cathode and its manufacture |
| US06/198,176 US4379250A (en) | 1979-10-19 | 1980-10-17 | Field emission cathode and method of fabricating the same |
| DE19803039283 DE3039283A1 (en) | 1979-10-19 | 1980-10-17 | FIELD EMISSION CATHODE AND METHOD FOR THEIR PRODUCTION |
| NL8005772A NL8005772A (en) | 1979-10-19 | 1980-10-20 | FIELD EMISSION CATHOD AND METHOD FOR MANUFACTURING SUCH A CATHOD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13641079A JPS5661733A (en) | 1979-10-24 | 1979-10-24 | Field emission cathode and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5661733A true JPS5661733A (en) | 1981-05-27 |
| JPS6223418B2 JPS6223418B2 (en) | 1987-05-22 |
Family
ID=15174504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13641079A Granted JPS5661733A (en) | 1979-10-19 | 1979-10-24 | Field emission cathode and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5661733A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5971232A (en) * | 1982-10-14 | 1984-04-21 | Natl Inst For Res In Inorg Mater | Manufacturing method of surface oxidized carbide field emitter |
| JPS6079636A (en) * | 1983-10-07 | 1985-05-07 | Hitachi Ltd | Thermal field emission cathode and its application equipment |
| JPS6086728A (en) * | 1983-10-19 | 1985-05-16 | Natl Inst For Res In Inorg Mater | field emitter |
| JPH01186740A (en) * | 1988-01-18 | 1989-07-26 | Canon Inc | Electron-emitting device and its manufacturing method |
| US5938495A (en) * | 1996-05-10 | 1999-08-17 | Nec Corporation | Method of manufacturing a field emission cold cathode capable of stably producing a high emission current |
| JP2006134638A (en) * | 2004-11-04 | 2006-05-25 | Univ Waseda | Electron beam source for electron optics |
| EP1950786A3 (en) * | 2007-01-24 | 2009-03-25 | FEI Company | Cold field emitter |
| JP2009238443A (en) * | 2008-03-26 | 2009-10-15 | Univ Waseda | Electron source, and manufacturing method of electron source |
| WO2011142054A1 (en) * | 2010-05-10 | 2011-11-17 | 電気化学工業株式会社 | Electron source |
| US8736170B1 (en) | 2011-02-22 | 2014-05-27 | Fei Company | Stable cold field emission electron source |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01247877A (en) * | 1988-03-30 | 1989-10-03 | Aisin Seiki Co Ltd | Electromagnetic pressure control valve |
-
1979
- 1979-10-24 JP JP13641079A patent/JPS5661733A/en active Granted
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5971232A (en) * | 1982-10-14 | 1984-04-21 | Natl Inst For Res In Inorg Mater | Manufacturing method of surface oxidized carbide field emitter |
| JPS6079636A (en) * | 1983-10-07 | 1985-05-07 | Hitachi Ltd | Thermal field emission cathode and its application equipment |
| JPS6086728A (en) * | 1983-10-19 | 1985-05-16 | Natl Inst For Res In Inorg Mater | field emitter |
| JPH01186740A (en) * | 1988-01-18 | 1989-07-26 | Canon Inc | Electron-emitting device and its manufacturing method |
| US5938495A (en) * | 1996-05-10 | 1999-08-17 | Nec Corporation | Method of manufacturing a field emission cold cathode capable of stably producing a high emission current |
| JP2006134638A (en) * | 2004-11-04 | 2006-05-25 | Univ Waseda | Electron beam source for electron optics |
| EP1950786A3 (en) * | 2007-01-24 | 2009-03-25 | FEI Company | Cold field emitter |
| US7888654B2 (en) | 2007-01-24 | 2011-02-15 | Fei Company | Cold field emitter |
| US8217565B2 (en) | 2007-01-24 | 2012-07-10 | Fei Company | Cold field emitter |
| JP2009238443A (en) * | 2008-03-26 | 2009-10-15 | Univ Waseda | Electron source, and manufacturing method of electron source |
| WO2011142054A1 (en) * | 2010-05-10 | 2011-11-17 | 電気化学工業株式会社 | Electron source |
| JP2011238459A (en) * | 2010-05-10 | 2011-11-24 | Denki Kagaku Kogyo Kk | Electron source |
| US8593048B2 (en) | 2010-05-10 | 2013-11-26 | Denki Kagaku Kogyo Kabushiki Kaisha | Electron source having a tungsten single crystal electrode |
| US8736170B1 (en) | 2011-02-22 | 2014-05-27 | Fei Company | Stable cold field emission electron source |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6223418B2 (en) | 1987-05-22 |
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