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JPS5685858A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5685858A
JPS5685858A JP16252379A JP16252379A JPS5685858A JP S5685858 A JPS5685858 A JP S5685858A JP 16252379 A JP16252379 A JP 16252379A JP 16252379 A JP16252379 A JP 16252379A JP S5685858 A JPS5685858 A JP S5685858A
Authority
JP
Japan
Prior art keywords
layer
film
region
type
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16252379A
Other languages
Japanese (ja)
Inventor
Tsutomu Akatsuka
Akira Tabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16252379A priority Critical patent/JPS5685858A/en
Publication of JPS5685858A publication Critical patent/JPS5685858A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a semiconductor having preferable characteristics by doping impurity in high density in a semiconductor layer at the portion to be mounted with aluminum electrode when mounting the electrode on the semiconductor layer, thereby preventing the deposition of silicon in aluminum. CONSTITUTION:An oxide film 7 is coated on an N type epitaxial layer 3 being a collector having an N type collector contact region 5 and a P type base region 6, and windows for forming base, emitter and collector terminals are opened thereat. Then, a polycrystalline Si layer 8 and a PSG film 9 are laminated on the entire surface and are grown thereon, the film 9 on the base terminal is removed, it is heat treated, P in the film 9 is diffused thereby, an N type emitter region 10 is formed in the N type emitter region 10, and an N<+> type region 11 is formed also in the region 5. Thereafter, the film 9 is removed, the base terminal is covered with the resist film 12, P ions are implanted to the whole surface, the layer 8 is converted into high impurity density layer 8', the layer 8 is retained only on the regions 10 and 11, and aluminum electrodes for the emitter and the collector are mounted thereon.
JP16252379A 1979-12-14 1979-12-14 Semiconductor device Pending JPS5685858A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16252379A JPS5685858A (en) 1979-12-14 1979-12-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16252379A JPS5685858A (en) 1979-12-14 1979-12-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5685858A true JPS5685858A (en) 1981-07-13

Family

ID=15756234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16252379A Pending JPS5685858A (en) 1979-12-14 1979-12-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5685858A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57102070A (en) * 1980-12-17 1982-06-24 Nec Corp Semiconductor device
JPH0897226A (en) * 1994-09-26 1996-04-12 Nec Corp PNP transistor, semiconductor integrated circuit, semiconductor device manufacturing method, and semiconductor integrated circuit manufacturing method
WO2001088994A1 (en) * 2000-05-12 2001-11-22 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219082A (en) * 1975-08-05 1977-01-14 Fujitsu Ltd Production method of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219082A (en) * 1975-08-05 1977-01-14 Fujitsu Ltd Production method of semiconductor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57102070A (en) * 1980-12-17 1982-06-24 Nec Corp Semiconductor device
JPH0897226A (en) * 1994-09-26 1996-04-12 Nec Corp PNP transistor, semiconductor integrated circuit, semiconductor device manufacturing method, and semiconductor integrated circuit manufacturing method
WO2001088994A1 (en) * 2000-05-12 2001-11-22 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacture thereof
US6674149B2 (en) 2000-05-12 2004-01-06 Matsushita Electric Industrial Co., Ltd. Bipolar transistor device having phosphorous
US6893934B2 (en) 2000-05-12 2005-05-17 Matsushita Electric Industrial Co., Ltd. Bipolar transistor device having phosphorous

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