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JPS5699A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5699A
JPS5699A JP7531779A JP7531779A JPS5699A JP S5699 A JPS5699 A JP S5699A JP 7531779 A JP7531779 A JP 7531779A JP 7531779 A JP7531779 A JP 7531779A JP S5699 A JPS5699 A JP S5699A
Authority
JP
Japan
Prior art keywords
power supply
supply line
voltage
diode
fed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7531779A
Other languages
Japanese (ja)
Inventor
Hiroshi Miyajima
Eiji Tagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7531779A priority Critical patent/JPS5699A/en
Publication of JPS5699A publication Critical patent/JPS5699A/en
Pending legal-status Critical Current

Links

Landscapes

  • Power Sources (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Stand-By Power Supply Arrangements (AREA)

Abstract

PURPOSE: To enable to keep the memory content after the interruption of power supply, by adding capacitors between the power supply line and GND and inserting a diode between the power supply line and the memory cell.
CONSTITUTION: When positive voltage VCC is fed to the power supply terminal 11, the positive voltage is fed between the gate and the source of the diode 13 consisting of N channel MOSTR, to turn on this TR and the voltage VCC-VTH dropped by the threshold voltage VTH of MOSTR is fed to the power supply line 7. This voltage charges up the capacitor 12 for normal readout and write-in operation. On the other hand, if the positive voltage applied to the terminal 11 is interrupted, the voltage between the gate and the source of MOSTR constituting the diode 13 is inverted from the state before interruption to turn off this TR. Thus, the charge stored in the capacitor 12 is stored at the voltage VCC-VTH of the power supply line 7, as far as the status is at standby where no write-in and readout are made. Accordingly, the memory content of the memory cell can be stored.
COPYRIGHT: (C)1981,JPO&Japio
JP7531779A 1979-06-14 1979-06-14 Semiconductor memory unit Pending JPS5699A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7531779A JPS5699A (en) 1979-06-14 1979-06-14 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7531779A JPS5699A (en) 1979-06-14 1979-06-14 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS5699A true JPS5699A (en) 1981-01-06

Family

ID=13572751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7531779A Pending JPS5699A (en) 1979-06-14 1979-06-14 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5699A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62256296A (en) * 1986-04-30 1987-11-07 Fujitsu Ltd Semiconductor nonvolatile memory device
US4719604A (en) * 1985-07-16 1988-01-12 Aisin Seiki Kabushikikaisha Reflective object detector with compensated receiver signal
WO2003067602A1 (en) * 2002-02-08 2003-08-14 Sony Corporation Composite storage circuit and semiconductor device having the same
JP2008181635A (en) * 2006-12-26 2008-08-07 Semiconductor Energy Lab Co Ltd Semiconductor memory device and semiconductor device
JP2008269751A (en) * 2007-04-25 2008-11-06 Semiconductor Energy Lab Co Ltd Semiconductor memory device and electronic equipment having semiconductor memory device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4719604A (en) * 1985-07-16 1988-01-12 Aisin Seiki Kabushikikaisha Reflective object detector with compensated receiver signal
JPS62256296A (en) * 1986-04-30 1987-11-07 Fujitsu Ltd Semiconductor nonvolatile memory device
WO2003067602A1 (en) * 2002-02-08 2003-08-14 Sony Corporation Composite storage circuit and semiconductor device having the same
EP1473733A4 (en) * 2002-02-08 2005-07-27 Sony Corp Composite storage circuit and semiconductor device having the same
US7385845B2 (en) 2002-02-08 2008-06-10 Sony Corporation Composite storage circuit and semiconductor device having the same
JP2008181635A (en) * 2006-12-26 2008-08-07 Semiconductor Energy Lab Co Ltd Semiconductor memory device and semiconductor device
KR101447051B1 (en) * 2006-12-26 2014-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2008269751A (en) * 2007-04-25 2008-11-06 Semiconductor Energy Lab Co Ltd Semiconductor memory device and electronic equipment having semiconductor memory device

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