JPS57103355A - Mos semiconductor device - Google Patents
Mos semiconductor deviceInfo
- Publication number
- JPS57103355A JPS57103355A JP55178862A JP17886280A JPS57103355A JP S57103355 A JPS57103355 A JP S57103355A JP 55178862 A JP55178862 A JP 55178862A JP 17886280 A JP17886280 A JP 17886280A JP S57103355 A JPS57103355 A JP S57103355A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- current
- fet
- drain
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the current between a substrate and a drain smaller than a channel current in an FET having a high resistance drain region, by interposing a Schottky barrier or reverse conductive type layer between the back surface electrode connected to the source and the substrate. CONSTITUTION:In an N-channel FET used, for example, for the output circuit of a pulse width modulation PWM type, a Ti film 11 forming a Schottky barrier (SB) is formed, for example, between the substrate 1 and an electrode 10 formed on the back surface of the substrate. (In case of P-channel FET, a W film is formed.) Or, an N type layer 12 is formed on the back surface of the substrate to form a P-N junction J1. Thus, when the source and drain are reversely biased therebetween, a current Insub flowing from the electrode 10 through the substrate to the drain can be eliminated at the SB or J1 to be ignored with respect to the channel current Inmos. Thus, an FET adapated for the PWM can be provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55178862A JPS57103355A (en) | 1980-12-19 | 1980-12-19 | Mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55178862A JPS57103355A (en) | 1980-12-19 | 1980-12-19 | Mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57103355A true JPS57103355A (en) | 1982-06-26 |
Family
ID=16055978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55178862A Pending JPS57103355A (en) | 1980-12-19 | 1980-12-19 | Mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57103355A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5086324A (en) * | 1988-07-11 | 1992-02-04 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor |
| US5171696A (en) * | 1988-11-07 | 1992-12-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
| US5512769A (en) * | 1992-05-25 | 1996-04-30 | Matsushita Electronics Corporation | High breakdown voltage semiconductor device and method of fabricating the same |
| CN102668348A (en) * | 2010-10-29 | 2012-09-12 | 松下电器产业株式会社 | Converter |
| US8693226B2 (en) | 2010-10-29 | 2014-04-08 | Panasonic Corporation | Synchronous rectification type inverter |
-
1980
- 1980-12-19 JP JP55178862A patent/JPS57103355A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5086324A (en) * | 1988-07-11 | 1992-02-04 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor |
| US5171696A (en) * | 1988-11-07 | 1992-12-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
| US5512769A (en) * | 1992-05-25 | 1996-04-30 | Matsushita Electronics Corporation | High breakdown voltage semiconductor device and method of fabricating the same |
| CN102668348A (en) * | 2010-10-29 | 2012-09-12 | 松下电器产业株式会社 | Converter |
| EP2493061A4 (en) * | 2010-10-29 | 2013-11-06 | Panasonic Corp | CONVERTER |
| US8693226B2 (en) | 2010-10-29 | 2014-04-08 | Panasonic Corporation | Synchronous rectification type inverter |
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