JPS57115552A - Electrophotographic receptor - Google Patents
Electrophotographic receptorInfo
- Publication number
- JPS57115552A JPS57115552A JP56000754A JP75481A JPS57115552A JP S57115552 A JPS57115552 A JP S57115552A JP 56000754 A JP56000754 A JP 56000754A JP 75481 A JP75481 A JP 75481A JP S57115552 A JPS57115552 A JP S57115552A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous
- amorphous silicon
- sih4
- scratching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 238000005299 abrasion Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 108091008695 photoreceptors Proteins 0.000 abstract 2
- 238000006748 scratching Methods 0.000 abstract 2
- 230000002393 scratching effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052986 germanium hydride Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
PURPOSE:To obtain a photoreceptor long in life and high in sensitivity to longer wavelength light, by successively forming an amorphous silicon layer, an amorphous germanium silicon layer, and further on them an amorphous silicon layer on a conductive substrate. CONSTITUTION:A photoconductive amorphous silicon (a-Si) layer 2 is formed on a conductive substrate 1 in 10-15mum thickness by the glow discharge decomposition method, etc. using a gas mixture of SiH4, PH3, B2H6, etc. An amorphous Ge-Si layer 3 is formed in 0.1-0.8mum thickness on the layer 2 using a gas mixture of SiH4, GeH4, PH3, B2H6, etc. to provide the second photoconductive layer 3, thus permitting a photoreceptor superior in durability and resistance to abrasion and scratching. Forming another amorphous Si layer 4 about 1mum thick enhances resistance to scratching and abrasion still higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56000754A JPS57115552A (en) | 1981-01-08 | 1981-01-08 | Electrophotographic receptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56000754A JPS57115552A (en) | 1981-01-08 | 1981-01-08 | Electrophotographic receptor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57115552A true JPS57115552A (en) | 1982-07-19 |
Family
ID=11482481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56000754A Pending JPS57115552A (en) | 1981-01-08 | 1981-01-08 | Electrophotographic receptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57115552A (en) |
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5837648A (en) * | 1981-07-17 | 1983-03-04 | プラズマ・フイジクス・コ−ポレ−シヨン | Glow discharge method and apparatus and photosensitive body device prepared thereby |
| JPS58171054A (en) * | 1982-03-31 | 1983-10-07 | Minolta Camera Co Ltd | Photoreceptor |
| JPS58189643A (en) * | 1982-03-31 | 1983-11-05 | Minolta Camera Co Ltd | Photoreceptor |
| FR2551266A1 (en) * | 1983-08-23 | 1985-03-01 | Canon Kk | PHOTOCONDUCTIVE ELEMENT USED IN ELECTROPHOTOGRAPHY |
| FR2551229A1 (en) * | 1983-08-26 | 1985-03-01 | Canon Kk | PHOTOCONDUCTIVE ELEMENT FOR ELECTROPHOTOGRAPHY |
| JPS6075841A (en) * | 1983-09-13 | 1985-04-30 | Canon Inc | photoconductive member |
| JPS6095548A (en) * | 1983-10-31 | 1985-05-28 | Canon Inc | Photoconductive member |
| JPS60140354A (en) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | Electrophotographic sensitive body |
| US4532198A (en) * | 1983-05-09 | 1985-07-30 | Canon Kabushiki Kaisha | Photoconductive member |
| JPS61232464A (en) * | 1985-04-08 | 1986-10-16 | Matsushita Electric Ind Co Ltd | Electrophotographic sensitive body |
| JPS62125363A (en) * | 1985-11-01 | 1987-06-06 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Improved substrate for electrophotographic photoreceptor and method for manufacturing the same |
| US4683185A (en) * | 1984-07-16 | 1987-07-28 | Minolta Camera Kabushiki Kaisha | Electrophotosensitive member having a depletion layer |
| US4683184A (en) * | 1984-07-16 | 1987-07-28 | Minolta Camera Kabushiki Kaisha | Electrophotosensitive member having alternating amorphous semiconductor layers |
| US4686164A (en) * | 1984-07-20 | 1987-08-11 | Minolta Camera Kabushiki Kaisha | Electrophotosensitive member with multiple layers of amorphous silicon |
| JPS62295063A (en) * | 1986-06-16 | 1987-12-22 | Fuji Xerox Co Ltd | Electrophotographic sensitive body |
| US4738912A (en) * | 1985-09-13 | 1988-04-19 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an amorphous carbon transport layer |
| US4741982A (en) * | 1985-09-13 | 1988-05-03 | Minolta Camera Kabushiki Kaisha | Photosensitive member having undercoat layer of amorphous carbon |
| US4743522A (en) * | 1985-09-13 | 1988-05-10 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| US5000831A (en) * | 1987-03-09 | 1991-03-19 | Minolta Camera Kabushiki Kaisha | Method of production of amorphous hydrogenated carbon layer |
| US5166018A (en) * | 1985-09-13 | 1992-11-24 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| JPH06208233A (en) * | 1983-07-21 | 1994-07-26 | Seiko Epson Corp | Electrophotographic photoreceptor and electrophotographic apparatus |
| JPH06208232A (en) * | 1983-07-21 | 1994-07-26 | Seiko Epson Corp | Electrophotographic photoreceptor and electrophotographic apparatus |
| JPH06208234A (en) * | 1983-07-21 | 1994-07-26 | Seiko Epson Corp | Electrophotographic photoreceptor and electrophotographic apparatus |
| JPH06208235A (en) * | 1983-07-21 | 1994-07-26 | Seiko Epson Corp | Electrophotographic photoreceptor and electrophotographic apparatus |
| JPH06208236A (en) * | 1983-07-21 | 1994-07-26 | Seiko Epson Corp | Electrophotographic receptor and electrophotographic device |
| US5514507A (en) * | 1993-05-27 | 1996-05-07 | Fuji Xerox Co., Ltd. | Electrophotographic photoreceptor with amorphous Si-Ge layer |
-
1981
- 1981-01-08 JP JP56000754A patent/JPS57115552A/en active Pending
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5837648A (en) * | 1981-07-17 | 1983-03-04 | プラズマ・フイジクス・コ−ポレ−シヨン | Glow discharge method and apparatus and photosensitive body device prepared thereby |
| JPS58171054A (en) * | 1982-03-31 | 1983-10-07 | Minolta Camera Co Ltd | Photoreceptor |
| JPS58189643A (en) * | 1982-03-31 | 1983-11-05 | Minolta Camera Co Ltd | Photoreceptor |
| US4532198A (en) * | 1983-05-09 | 1985-07-30 | Canon Kabushiki Kaisha | Photoconductive member |
| JPH06208236A (en) * | 1983-07-21 | 1994-07-26 | Seiko Epson Corp | Electrophotographic receptor and electrophotographic device |
| JPH06208233A (en) * | 1983-07-21 | 1994-07-26 | Seiko Epson Corp | Electrophotographic photoreceptor and electrophotographic apparatus |
| JPH06208232A (en) * | 1983-07-21 | 1994-07-26 | Seiko Epson Corp | Electrophotographic photoreceptor and electrophotographic apparatus |
| JPH06208234A (en) * | 1983-07-21 | 1994-07-26 | Seiko Epson Corp | Electrophotographic photoreceptor and electrophotographic apparatus |
| JPH06208235A (en) * | 1983-07-21 | 1994-07-26 | Seiko Epson Corp | Electrophotographic photoreceptor and electrophotographic apparatus |
| FR2551266A1 (en) * | 1983-08-23 | 1985-03-01 | Canon Kk | PHOTOCONDUCTIVE ELEMENT USED IN ELECTROPHOTOGRAPHY |
| FR2551229A1 (en) * | 1983-08-26 | 1985-03-01 | Canon Kk | PHOTOCONDUCTIVE ELEMENT FOR ELECTROPHOTOGRAPHY |
| JPS6075841A (en) * | 1983-09-13 | 1985-04-30 | Canon Inc | photoconductive member |
| JPS6095548A (en) * | 1983-10-31 | 1985-05-28 | Canon Inc | Photoconductive member |
| JPS60140354A (en) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | Electrophotographic sensitive body |
| US4683184A (en) * | 1984-07-16 | 1987-07-28 | Minolta Camera Kabushiki Kaisha | Electrophotosensitive member having alternating amorphous semiconductor layers |
| US4683185A (en) * | 1984-07-16 | 1987-07-28 | Minolta Camera Kabushiki Kaisha | Electrophotosensitive member having a depletion layer |
| US4686164A (en) * | 1984-07-20 | 1987-08-11 | Minolta Camera Kabushiki Kaisha | Electrophotosensitive member with multiple layers of amorphous silicon |
| JPS61232464A (en) * | 1985-04-08 | 1986-10-16 | Matsushita Electric Ind Co Ltd | Electrophotographic sensitive body |
| US4738912A (en) * | 1985-09-13 | 1988-04-19 | Minolta Camera Kabushiki Kaisha | Photosensitive member having an amorphous carbon transport layer |
| US4741982A (en) * | 1985-09-13 | 1988-05-03 | Minolta Camera Kabushiki Kaisha | Photosensitive member having undercoat layer of amorphous carbon |
| US4743522A (en) * | 1985-09-13 | 1988-05-10 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| US5166018A (en) * | 1985-09-13 | 1992-11-24 | Minolta Camera Kabushiki Kaisha | Photosensitive member with hydrogen-containing carbon layer |
| JPS62125363A (en) * | 1985-11-01 | 1987-06-06 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Improved substrate for electrophotographic photoreceptor and method for manufacturing the same |
| JPS62295063A (en) * | 1986-06-16 | 1987-12-22 | Fuji Xerox Co Ltd | Electrophotographic sensitive body |
| US5000831A (en) * | 1987-03-09 | 1991-03-19 | Minolta Camera Kabushiki Kaisha | Method of production of amorphous hydrogenated carbon layer |
| US5514507A (en) * | 1993-05-27 | 1996-05-07 | Fuji Xerox Co., Ltd. | Electrophotographic photoreceptor with amorphous Si-Ge layer |
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