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JPS57120380A - Manufacture of gaas fet - Google Patents

Manufacture of gaas fet

Info

Publication number
JPS57120380A
JPS57120380A JP56005882A JP588281A JPS57120380A JP S57120380 A JPS57120380 A JP S57120380A JP 56005882 A JP56005882 A JP 56005882A JP 588281 A JP588281 A JP 588281A JP S57120380 A JPS57120380 A JP S57120380A
Authority
JP
Japan
Prior art keywords
metal
gaas
gate
deposited
react
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56005882A
Other languages
Japanese (ja)
Inventor
Nobuyuki Toyoda
Masao Mochizuki
Takamaro Mizoguchi
Akimichi Hojo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56005882A priority Critical patent/JPS57120380A/en
Publication of JPS57120380A publication Critical patent/JPS57120380A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To facilitate precision control of threshold voltage and reduction of gate resistance by heat treating a gate metal, a lamination of a metal reactive with GaAs, a hard-to-react metal and easy-to-work metal, one over the other. CONSTITUTION:An electrically active layer 2B is formed on a semi-insulator GaAs crystal 2A. One of the metals, Pt, Ti. Pd reactive with GaAs a gate metal is vapor-deposited on the layer 2B. Then one of the metal Mo, Ta, W, Cr which are hard to react with GaAs is deposited. And again an easy-to-work metal, such as Au is deposited to form a gate of layered construction. It is then heat treated to make to the metal of the bottom layer react with GaAs to control threshold voltage to obtain the desired threshold voltage. A normally-off type GaAs FET made in this way has a low gate resistance.
JP56005882A 1981-01-20 1981-01-20 Manufacture of gaas fet Pending JPS57120380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56005882A JPS57120380A (en) 1981-01-20 1981-01-20 Manufacture of gaas fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56005882A JPS57120380A (en) 1981-01-20 1981-01-20 Manufacture of gaas fet

Publications (1)

Publication Number Publication Date
JPS57120380A true JPS57120380A (en) 1982-07-27

Family

ID=11623262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56005882A Pending JPS57120380A (en) 1981-01-20 1981-01-20 Manufacture of gaas fet

Country Status (1)

Country Link
JP (1) JPS57120380A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158274A (en) * 1984-08-28 1986-03-25 Sharp Corp Manufacturing method of semiconductor device
JPS61134077A (en) * 1984-12-04 1986-06-21 Jido Keisoku Gijutsu Kenkiyuukumiai Semiconductor device
US6617660B2 (en) 1998-09-09 2003-09-09 Sanyo Electric Co., Ltd. Field effect transistor semiconductor and method for manufacturing the same
JP2008512307A (en) * 2004-09-08 2008-04-24 エドマンズ，メリッサ Container cover and its dispenser

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158274A (en) * 1984-08-28 1986-03-25 Sharp Corp Manufacturing method of semiconductor device
JPS61134077A (en) * 1984-12-04 1986-06-21 Jido Keisoku Gijutsu Kenkiyuukumiai Semiconductor device
US6617660B2 (en) 1998-09-09 2003-09-09 Sanyo Electric Co., Ltd. Field effect transistor semiconductor and method for manufacturing the same
JP2008512307A (en) * 2004-09-08 2008-04-24 エドマンズ，メリッサ Container cover and its dispenser

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