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JPS57139985A - Buried semiconductor laser element with multiaxis mode - Google Patents

Buried semiconductor laser element with multiaxis mode

Info

Publication number
JPS57139985A
JPS57139985A JP2583781A JP2583781A JPS57139985A JP S57139985 A JPS57139985 A JP S57139985A JP 2583781 A JP2583781 A JP 2583781A JP 2583781 A JP2583781 A JP 2583781A JP S57139985 A JPS57139985 A JP S57139985A
Authority
JP
Japan
Prior art keywords
semiconductor laser
buried
laser element
width
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2583781A
Other languages
Japanese (ja)
Other versions
JPS6318878B2 (en
Inventor
Hidenori Nomura
Mitsunori Sugimoto
Akira Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2583781A priority Critical patent/JPS57139985A/en
Publication of JPS57139985A publication Critical patent/JPS57139985A/en
Publication of JPS6318878B2 publication Critical patent/JPS6318878B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To form a buried semiconductor laser element with multiaxis mode with a good reproducibility by a method wherein a width of a striped active layer which is buried are varied at each region. CONSTITUTION:A width of a striped active region 20 in a double heterojunction structure which is buried with a layer having a wide forbidden band width is arranged to be 2mum, and notches 21-24 with length of 3mum and depth of 0.5mum are provided to be distributed at random. Thereby while maintaining a substrate traverse mode, a semiconductor laser which oscillates stably in 3-5 axial modes can be obtained and it can be used in a multimode type optical fiber transmission system.
JP2583781A 1981-02-24 1981-02-24 Buried semiconductor laser element with multiaxis mode Granted JPS57139985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2583781A JPS57139985A (en) 1981-02-24 1981-02-24 Buried semiconductor laser element with multiaxis mode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2583781A JPS57139985A (en) 1981-02-24 1981-02-24 Buried semiconductor laser element with multiaxis mode

Publications (2)

Publication Number Publication Date
JPS57139985A true JPS57139985A (en) 1982-08-30
JPS6318878B2 JPS6318878B2 (en) 1988-04-20

Family

ID=12176963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2583781A Granted JPS57139985A (en) 1981-02-24 1981-02-24 Buried semiconductor laser element with multiaxis mode

Country Status (1)

Country Link
JP (1) JPS57139985A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7005680B2 (en) 2000-11-01 2006-02-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7005680B2 (en) 2000-11-01 2006-02-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members

Also Published As

Publication number Publication date
JPS6318878B2 (en) 1988-04-20

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