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JPS57143477A - Treating device - Google Patents

Treating device

Info

Publication number
JPS57143477A
JPS57143477A JP2779281A JP2779281A JPS57143477A JP S57143477 A JPS57143477 A JP S57143477A JP 2779281 A JP2779281 A JP 2779281A JP 2779281 A JP2779281 A JP 2779281A JP S57143477 A JPS57143477 A JP S57143477A
Authority
JP
Japan
Prior art keywords
etching
film
high pressure
wafer
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2779281A
Other languages
Japanese (ja)
Inventor
Akira Kojima
Kazuhiro Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2779281A priority Critical patent/JPS57143477A/en
Publication of JPS57143477A publication Critical patent/JPS57143477A/en
Pending legal-status Critical Current

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  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To make fine etching possible without causing side etching in selective etching treatment for semiconductor elements, by injecting an etching soln. in the form of beams under a high pressure to the surface of an element rotating at a high speed.
CONSTITUTION: A thermally oxidized film (SiO2) 13 is grown on an Si substrate 12, and an Al film 14 is vapor-deposited over the entire surface after electrode windows are opened. A photoresist film 15 for forming wiring patterns is formed thereon, after which this semiconductor wafer 1 is fixed on a susceptor 3, and is rotated at a high speed. On the other hand, the etching soln. 4 in a tank 7 is injected in the form of beams from a high pressure injection nozzle 5 onto the surface of the wafer 1 by the high pressure gasenous nitrogen from a compressor 8. In this case, it is injected while moving the position of the nozzle 5 back and forth from the center of the wafer 1 to the peripheral part. The Al film 14 in the parts where there are no photoresist layers 15 is etched selectively by extremely less side etching.
COPYRIGHT: (C)1982,JPO&Japio
JP2779281A 1981-02-27 1981-02-27 Treating device Pending JPS57143477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2779281A JPS57143477A (en) 1981-02-27 1981-02-27 Treating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2779281A JPS57143477A (en) 1981-02-27 1981-02-27 Treating device

Publications (1)

Publication Number Publication Date
JPS57143477A true JPS57143477A (en) 1982-09-04

Family

ID=12230818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2779281A Pending JPS57143477A (en) 1981-02-27 1981-02-27 Treating device

Country Status (1)

Country Link
JP (1) JPS57143477A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294461A (en) * 2003-02-21 2008-12-04 Panasonic Corp Liquid phase etching equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5044941A (en) * 1973-07-31 1975-04-22
JPS5339228A (en) * 1976-09-22 1978-04-11 Hitachi Ltd Sprayyetching method
JPS5385744A (en) * 1977-01-06 1978-07-28 Nippon Electric Co Spray etching device
JPS5468736A (en) * 1977-11-11 1979-06-02 Hitachi Ltd Etching device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5044941A (en) * 1973-07-31 1975-04-22
JPS5339228A (en) * 1976-09-22 1978-04-11 Hitachi Ltd Sprayyetching method
JPS5385744A (en) * 1977-01-06 1978-07-28 Nippon Electric Co Spray etching device
JPS5468736A (en) * 1977-11-11 1979-06-02 Hitachi Ltd Etching device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294461A (en) * 2003-02-21 2008-12-04 Panasonic Corp Liquid phase etching equipment

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