JPS57186367A - Semiconductor device - Google Patents

Abstract

PURPOSE:To set the channel length of a gate to predetermined value easily and with high accuracy, and to improve the characteristic of power consumption and response by directly connecting a gate electrode by wiring, one end thereof is connected to the surface of the gate electrode and the other end thereof to a source. CONSTITUTION:SiO2 33a And poly Si 34a are stacked onto an Si substrate 30, and the gate electrode 34 is formed using a resist 40 as a mask. The surface of the electrode 34 is oxidized while SiO2 33b is stacked, the surface is coated with a resist mask 42 with a window hole while adjoining to the electrode 34, and a connecting hole 43 communicating with the substrate 30 and the electrode 34 is shaped to the films 33b, 33a. The resist 42 is removed, poly Si 44 connected to the substrate 30 and the electrode 34 is deposited through the hole 43, and a mask 45 according to a prescribed pattern is executed. The wiring layer 35 is formed, the mask 45 is removed, windows 46 are bored, an impurity is diffused, and the source 31 are a drain 32 are shaped. Since masks for forming the electrode 34 and the connecting hole 43 can be conformed with high accuracy, the wiring layer 35 can be disposed with high accuracy, the channel length of the gate is set to predetermined value, and the characteristic of power consumption and response and improved remarkably.