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JPS5723937A - Photographic etching method - Google Patents

Photographic etching method

Info

Publication number
JPS5723937A
JPS5723937A JP9836380A JP9836380A JPS5723937A JP S5723937 A JPS5723937 A JP S5723937A JP 9836380 A JP9836380 A JP 9836380A JP 9836380 A JP9836380 A JP 9836380A JP S5723937 A JPS5723937 A JP S5723937A
Authority
JP
Japan
Prior art keywords
resist
substrate
hmds
parts
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9836380A
Other languages
Japanese (ja)
Other versions
JPH0128373B2 (en
Inventor
Masaru Sasako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9836380A priority Critical patent/JPS5723937A/en
Publication of JPS5723937A publication Critical patent/JPS5723937A/en
Publication of JPH0128373B2 publication Critical patent/JPH0128373B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To obtain a high contrast resist pattern suitable for fabricating VLSI elements or the like, by coating a resist on a semiconductor substrate, drying it, exposing the resist in a specific organic silicon compound atmosphere, and then, developing it. CONSTITUTION:A spinner 14 for attracting a semiconductor substrate 13 by evacuation is provided in a coating and processing chamber 12 consisting of upper and lower cups 10, 11, the substrate 13 is attracted, and the chamber 12 is evacuated through an exhaust pipe 15. Then, a resist liquid is dropped through nozzles 17, 18, and the spinner is rotated to coat the resist on the substrate 13. After that, hexamethyl-disilazane (HMDS) gas is drawn fully into the chamber 12 through a suction pipe 16 to allow the resist to absorb it and to react with it. The substrate 13 having finished absorption and reaction is taken out and patternwise exposed, and developed with an alkaline developing solution. The exposed parts 21-1, 21-3 among the parts 21-1-21-3 where HMDS reacted on the parts of the resist layer 20, 21, 22 of the substrate 19 obtained become low in developing velocity, thus permitting a pattern obtained to have high precision, because an angle 0' becomes greater than an angle 0 in the case of the HMDS treatment omitted, as shown in the figure, resulting in raising contrast.
JP9836380A 1980-07-17 1980-07-17 Photographic etching method Granted JPS5723937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9836380A JPS5723937A (en) 1980-07-17 1980-07-17 Photographic etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9836380A JPS5723937A (en) 1980-07-17 1980-07-17 Photographic etching method

Publications (2)

Publication Number Publication Date
JPS5723937A true JPS5723937A (en) 1982-02-08
JPH0128373B2 JPH0128373B2 (en) 1989-06-02

Family

ID=14217790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9836380A Granted JPS5723937A (en) 1980-07-17 1980-07-17 Photographic etching method

Country Status (1)

Country Link
JP (1) JPS5723937A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60158441A (en) * 1983-12-20 1985-08-19 チバ−ガイギ−　アクチエンゲゼルシヤフト Formation of image
JPS61107346A (en) * 1984-10-26 1986-05-26 ユセベ　エレクトロニックス，ソシエテ　アノニム Method of forming negative features in photoresist layer
JPS61138255A (en) * 1984-12-07 1986-06-25 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Resist enabling upper imageable plasma development
JPS61200537A (en) * 1985-02-27 1986-09-05 イムテツク・プロダクツ・インコ−ポレ−テツド Method of elevating quality of picture for photoresist of positive by inversion of vapor diffusion image
JPS61268028A (en) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Development of mask image in photoresist
JPS6225424A (en) * 1985-07-26 1987-02-03 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
JPS63165845A (en) * 1986-12-26 1988-07-09 Toshiba Corp Pattern forming method
JPS63300237A (en) * 1987-05-19 1988-12-07 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Gaseous phase photoresist silyl conversion
JPH0227361A (en) * 1988-07-18 1990-01-30 Matsushita Electric Ind Co Ltd Pattern formation method
US4921778A (en) * 1988-07-29 1990-05-01 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
JPH02297557A (en) * 1989-05-12 1990-12-10 Mitsubishi Electric Corp Formation of resist pattern
US5215867A (en) * 1983-09-16 1993-06-01 At&T Bell Laboratories Method with gas functionalized plasma developed layer
KR100776281B1 (en) 2006-06-20 2007-11-13 세메스 주식회사 Apparatus for treating substrates
US8267103B2 (en) 2006-06-12 2012-09-18 Semes Co. Ltd Method and apparatus for cleaning substrates

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5215867A (en) * 1983-09-16 1993-06-01 At&T Bell Laboratories Method with gas functionalized plasma developed layer
JPS60158441A (en) * 1983-12-20 1985-08-19 チバ−ガイギ−　アクチエンゲゼルシヤフト Formation of image
JPH0220869A (en) * 1984-10-26 1990-01-24 Ucb Sa Resist for dry development
JPS61107346A (en) * 1984-10-26 1986-05-26 ユセベ　エレクトロニックス，ソシエテ　アノニム Method of forming negative features in photoresist layer
JPS61138255A (en) * 1984-12-07 1986-06-25 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Resist enabling upper imageable plasma development
JPS61200537A (en) * 1985-02-27 1986-09-05 イムテツク・プロダクツ・インコ−ポレ−テツド Method of elevating quality of picture for photoresist of positive by inversion of vapor diffusion image
JPS61268028A (en) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Development of mask image in photoresist
JPS6225424A (en) * 1985-07-26 1987-02-03 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
JPS63165845A (en) * 1986-12-26 1988-07-09 Toshiba Corp Pattern forming method
JPS63300237A (en) * 1987-05-19 1988-12-07 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Gaseous phase photoresist silyl conversion
JPH0227361A (en) * 1988-07-18 1990-01-30 Matsushita Electric Ind Co Ltd Pattern formation method
US4921778A (en) * 1988-07-29 1990-05-01 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
JPH02297557A (en) * 1989-05-12 1990-12-10 Mitsubishi Electric Corp Formation of resist pattern
US8267103B2 (en) 2006-06-12 2012-09-18 Semes Co. Ltd Method and apparatus for cleaning substrates
KR100776281B1 (en) 2006-06-20 2007-11-13 세메스 주식회사 Apparatus for treating substrates

Also Published As

Publication number Publication date
JPH0128373B2 (en) 1989-06-02

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