JPS5771165A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5771165A JPS5771165A JP55147923A JP14792380A JPS5771165A JP S5771165 A JPS5771165 A JP S5771165A JP 55147923 A JP55147923 A JP 55147923A JP 14792380 A JP14792380 A JP 14792380A JP S5771165 A JPS5771165 A JP S5771165A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electric potential
- capacitor
- circuit
- conductive layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
- H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To prevent a variation in substrate electric potential accompanying a variation in electric potential of capacitor electrode and to stabilize an IC caontaining a delay circuit, a step-up circuit, and a step-down circuit by a method wherein a conductive laer forming constant electric potential is provided between the capacitor consisting of a plurality of opposed conductive layers and a substrate. CONSTITUTION:For example, as a capacitor element used for boost trap circuit and the like, conductive layers 10, 11 (or conductive layers 12, 13) such as Al or poly Si are oppositely arranged through an insulation layer on a P type substrate 1, for example. For example, N type diffusion regions 3, 4 are provided between the conductive layers forming these capacitor electrodes and the substrate 1 (or a separate metal layer 14 is provided on the substrate 1 through the insulation film) and these are grounded to shield the capacitor electrodes and substrate in electric potential. In this way, malfunction and the like by a variation in substrate electric potential such as other circuit, for example, RAM and the like can be prevented and the operation of IC having capacitor elements with a high capacitance value can be stabilized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55147923A JPS5771165A (en) | 1980-10-22 | 1980-10-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55147923A JPS5771165A (en) | 1980-10-22 | 1980-10-22 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5771165A true JPS5771165A (en) | 1982-05-01 |
| JPH0318345B2 JPH0318345B2 (en) | 1991-03-12 |
Family
ID=15441138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55147923A Granted JPS5771165A (en) | 1980-10-22 | 1980-10-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5771165A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198753A (en) * | 1983-12-13 | 1985-10-08 | フェアチャイルド セミコンダクタ コーポレーション | Method and device for reducing signal transmitting loss in super lsi integrated circuit |
| US5594279A (en) * | 1992-11-12 | 1997-01-14 | Texas Instruments Incorporated | Semiconductor device having shield wiring for noise suppression |
| EP0875944A1 (en) * | 1997-04-21 | 1998-11-04 | Lsi Logic Corporation | Capacitors with silicized polysilicon shielding in digital CMOS process |
| EP0903783A1 (en) * | 1997-09-22 | 1999-03-24 | STMicroelectronics SA | Realization of an intermetallic capacitor |
| US6262469B1 (en) * | 1998-03-25 | 2001-07-17 | Advanced Micro Devices, Inc. | Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor |
| JP2020181884A (en) * | 2019-04-25 | 2020-11-05 | 合肥晶合集成電路有限公司 | Capacitive semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52113184A (en) * | 1977-03-23 | 1977-09-22 | Toshiba Corp | Semiconductor integrated circuit |
| JPS5448490A (en) * | 1977-08-06 | 1979-04-17 | Philips Nv | Semiconductor |
-
1980
- 1980-10-22 JP JP55147923A patent/JPS5771165A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52113184A (en) * | 1977-03-23 | 1977-09-22 | Toshiba Corp | Semiconductor integrated circuit |
| JPS5448490A (en) * | 1977-08-06 | 1979-04-17 | Philips Nv | Semiconductor |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198753A (en) * | 1983-12-13 | 1985-10-08 | フェアチャイルド セミコンダクタ コーポレーション | Method and device for reducing signal transmitting loss in super lsi integrated circuit |
| US5594279A (en) * | 1992-11-12 | 1997-01-14 | Texas Instruments Incorporated | Semiconductor device having shield wiring for noise suppression |
| EP0875944A1 (en) * | 1997-04-21 | 1998-11-04 | Lsi Logic Corporation | Capacitors with silicized polysilicon shielding in digital CMOS process |
| EP0903783A1 (en) * | 1997-09-22 | 1999-03-24 | STMicroelectronics SA | Realization of an intermetallic capacitor |
| FR2768852A1 (en) * | 1997-09-22 | 1999-03-26 | Sgs Thomson Microelectronics | REALIZATION OF AN INTERMETALLIC CAPACITOR |
| US6262469B1 (en) * | 1998-03-25 | 2001-07-17 | Advanced Micro Devices, Inc. | Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor |
| JP2020181884A (en) * | 2019-04-25 | 2020-11-05 | 合肥晶合集成電路有限公司 | Capacitive semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0318345B2 (en) | 1991-03-12 |
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