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JPS5778206A - Surface acoustic wave element and its production - Google Patents

Surface acoustic wave element and its production

Info

Publication number
JPS5778206A
JPS5778206A JP15378980A JP15378980A JPS5778206A JP S5778206 A JPS5778206 A JP S5778206A JP 15378980 A JP15378980 A JP 15378980A JP 15378980 A JP15378980 A JP 15378980A JP S5778206 A JPS5778206 A JP S5778206A
Authority
JP
Japan
Prior art keywords
single crystal
electrode
substrate
film
acoustic wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15378980A
Other languages
Japanese (ja)
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15378980A priority Critical patent/JPS5778206A/en
Publication of JPS5778206A publication Critical patent/JPS5778206A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To reduce the propagation loss in a high frequency, by using an elastic substance substrate where an aluminum nitride single crystal film is formed on a silicon single crystal layer by the epitaxial method. CONSTITUTION:A silicon single crystal layer of one of crystal faces (111), (110), and (100) is formed on a silicon single crystal substrate 2 and is subjected to the heat treatment in an atmosphere containing an Al compound and a nitrogenous compound to grow epitaxially an Al nitride single crystal film 15 on the surface of the substrate 2. A pair of comb-shaped input electrodes 18 and 19 and an output electrode 20 between them are provided on this film 15, and input termials 18A and 19A and an output terminal 20A are provided on respective electrodes. Then, a substrate electrode 17 is provided to constitute a surface acoustic wave element. An input signal is applied to terminals 18A and 19A and is converted to a surface acoustic wave by electrodes 18 and 19 and is propagated to the electrode 20. In this case, two signal waves are mixed by the piezoelectric characteristics of the film 15 to generate an electric field, and only uniform components, which are not changed dependently upon positions, out of field components are outputted from the terminal 20A through the electrode 20.
JP15378980A 1980-11-04 1980-11-04 Surface acoustic wave element and its production Pending JPS5778206A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15378980A JPS5778206A (en) 1980-11-04 1980-11-04 Surface acoustic wave element and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15378980A JPS5778206A (en) 1980-11-04 1980-11-04 Surface acoustic wave element and its production

Publications (1)

Publication Number Publication Date
JPS5778206A true JPS5778206A (en) 1982-05-15

Family

ID=15570165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15378980A Pending JPS5778206A (en) 1980-11-04 1980-11-04 Surface acoustic wave element and its production

Country Status (1)

Country Link
JP (1) JPS5778206A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5859618A (en) * 1981-10-05 1983-04-08 Nobuo Mikoshiba Surface acoustic wave element
JPH02248110A (en) * 1989-03-20 1990-10-03 Sanyo Electric Co Ltd Surface acoustic wave device
US9369105B1 (en) * 2007-08-31 2016-06-14 Rf Micro Devices, Inc. Method for manufacturing a vibrating MEMS circuit
US9385685B2 (en) 2007-08-31 2016-07-05 Rf Micro Devices, Inc. MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer
US9391588B2 (en) 2007-08-31 2016-07-12 Rf Micro Devices, Inc. MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer
US9466430B2 (en) 2012-11-02 2016-10-11 Qorvo Us, Inc. Variable capacitor and switch structures in single crystal piezoelectric MEMS devices using bimorphs
US9991872B2 (en) 2014-04-04 2018-06-05 Qorvo Us, Inc. MEMS resonator with functional layers
US9998088B2 (en) 2014-05-02 2018-06-12 Qorvo Us, Inc. Enhanced MEMS vibrating device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5859618A (en) * 1981-10-05 1983-04-08 Nobuo Mikoshiba Surface acoustic wave element
JPH02248110A (en) * 1989-03-20 1990-10-03 Sanyo Electric Co Ltd Surface acoustic wave device
US9369105B1 (en) * 2007-08-31 2016-06-14 Rf Micro Devices, Inc. Method for manufacturing a vibrating MEMS circuit
US9385685B2 (en) 2007-08-31 2016-07-05 Rf Micro Devices, Inc. MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer
US9391588B2 (en) 2007-08-31 2016-07-12 Rf Micro Devices, Inc. MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer
US9466430B2 (en) 2012-11-02 2016-10-11 Qorvo Us, Inc. Variable capacitor and switch structures in single crystal piezoelectric MEMS devices using bimorphs
US9991872B2 (en) 2014-04-04 2018-06-05 Qorvo Us, Inc. MEMS resonator with functional layers
US9998088B2 (en) 2014-05-02 2018-06-12 Qorvo Us, Inc. Enhanced MEMS vibrating device

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