JPS58137239A - Cooling apparatus for semiconductor element - Google Patents
Cooling apparatus for semiconductor elementInfo
- Publication number
- JPS58137239A JPS58137239A JP1896282A JP1896282A JPS58137239A JP S58137239 A JPS58137239 A JP S58137239A JP 1896282 A JP1896282 A JP 1896282A JP 1896282 A JP1896282 A JP 1896282A JP S58137239 A JPS58137239 A JP S58137239A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- power transistor
- heat sink
- thermo module
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000001816 cooling Methods 0.000 title claims abstract description 13
- 230000005611 electricity Effects 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000020169 heat generation Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 3
- 206010000234 Abortion spontaneous Diseases 0.000 description 1
- 201000004384 Alopecia Diseases 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003676 hair loss Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 208000015994 miscarriage Diseases 0.000 description 1
- 208000000995 spontaneous abortion Diseases 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、％に大出力の半導体素子の冷却装置に＠す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is directed to a cooling device for a semiconductor element with a relatively high output.
半１体、４１にパワートランジスタの寿命ｒｔ、ソの箇
會一度に影響され、通常１２５℃〜１５０℃位で使用す
るとライフタイムが２０００〜４０００時間位であるが
、接合温度を１０℃下げるとライフタイムがλフ倍位延
びるといわれてｔする。The lifespan of a power transistor is affected by the life rt of a power transistor in 41 and 41, and the life time is usually about 2000 to 4000 hours when used at about 125℃ to 150℃, but if the junction temperature is lowered by 10℃ It is said that the lifetime will be extended by a factor of λ.
したがって、動作中の半導体素子つ、温度を下げること
は、本来半導体素子の熱破か−１を防止するという目的
の外、電子機器のライフタイムの上ｂ１らも重要な事項
になってくる。Therefore, lowering the temperature of a semiconductor element during operation is not only intended to prevent thermal breakdown of the semiconductor element, but also has an important effect on the lifetime of the electronic device.
通常、発熱量の大きい半導体素子、１％にパワートラン
ジスタは大容量のヒートシンク、又はフィン付ヒートパ
イプなどを使用して放熱作用によりパワートランジスタ
の温度な下げることが行われているが、ヒートシンク（
又はヒートパイプ）などの放電機具の温［Ｋ対し、パワ
ートランジスタの接合温度は、通常５℃〜ｌＯ℃近く高
くなる。Normally, power transistors, which are semiconductor elements that generate a large amount of heat, use large-capacity heat sinks or heat pipes with fins to lower the temperature of power transistors by dissipating heat.
The junction temperature of a power transistor is usually 5°C to 10°C higher than the temperature of a discharge device such as a heat pipe or a heat pipe.
そのため充分な冷却効果を与えるためにヒートシンクの
形状も大きくなり、電子機器の筐体も大型化して製造コ
ストも増大する。Therefore, in order to provide a sufficient cooling effect, the shape of the heat sink becomes large, and the casing of the electronic device also becomes large, leading to an increase in manufacturing costs.
この発明は、か〜る点にかんがみてなされたもので、サ
ーモモジュールを使用することにより小皿化すると共に
、半導体素子を必要に応じて冷却するようにしたもので
ある。This invention was made in view of the above points, and uses a thermo module to make the device smaller and to cool the semiconductor element as required.
以下、この発明の半導体素子の冷却装置について説明す
る。Hereinafter, a cooling device for a semiconductor device according to the present invention will be explained.
まず、この発明で使用されているサーモモジュール（半
導体熱電子冷却ユニット）について説明する。First, the thermo module (semiconductor thermionic cooling unit) used in this invention will be explained.
＃Ｉ１図はサーモモジュールの原理を示すもので、１は
ｐｉｉｉの半導体、２はＮｌｌの半導体、＾、８は前記
各半導体１，２に結合されている金属板である。#I1 diagram shows the principle of a thermomodule, where 1 is a PIII semiconductor, 2 is an Nll semiconductor, and 8 is a metal plate coupled to each of the semiconductors 1 and 2.
このような構造において、電源Ｅより電ａ１を前記両生
導体１，２ＫｉｌｌＥすとベル手工効果によって金属板
Ａの側では熱の吸収が発生し、その温度が低下すと同ｗ
＃に金属板Ｂの方では発熱作用が発生し、温度が上昇す
ることが知られている。In such a structure, when electricity a1 is applied from the power supply E to the amphiboid conductors 1 and 2, heat absorption occurs on the metal plate A side due to the Bell's handiwork effect, and as the temperature decreases, the same
It is known that heat generation occurs on the metal plate B and the temperature rises.
前記半導体１，２としてはペルチェ効果の大きい、例え
ばスズ、７７千モンの合金ｔｒどが使用されか−る構造
を多数個集積してカスケード接続することｋよりサーモ
モジュールが構成される。The semiconductors 1 and 2 are made of a material having a large Peltier effect, such as tin or a 77,000 mon alloy.A thermomodule is constructed by integrating a large number of semiconductors and cascading them together.
第２図はサーモモジニールの骨性の一例を示したもので
、サーモモジュールの供給電流をパラメータとし、縦軸
に金属板＾・８間の温度差ΔＴ。Figure 2 shows an example of the bone quality of thermomodine, where the supply current of the thermomodule is used as a parameter, and the vertical axis represents the temperature difference ΔT between the metal plates.
横軸に吸熱ＩＱな示したもめである。The horizontal axis shows endothermic IQ.
この特性図から明らかなように吸熱、側と発熱側の一度
差ΔＴは吸熱量Ｑが低いときは最大６０〜フＯ℃とする
ことかでき、一定の温度差ΔＴとするサーそモジュール
の供給域流産と吸熱量Ｑははげ比例関係にある。As is clear from this characteristic diagram, the one-time difference ΔT between the endothermic side and the exothermic side can be set to a maximum of 60 to 0°C when the amount of heat absorption Q is low, and the supply of a thermos module that maintains a constant temperature difference ΔT Regional miscarriage and endothermic amount Q are in a proportional relationship with baldness.
第３図はサーモモジュールを使用してパワートランジス
タな冷却するときの構造な側面図としたもので１Ｍはサ
ーモモジュール、Ｈはヒートシンク、Ｔｒ はパワート
ランジスタである。この構造ではし一トシンクＨとパワ
ートランジスタＴｒの関にサーモモジュールＭを介在し
、その発熱側の金属板ＢはヒートシンクＨな、吸熱側の
金属板へにパワートランジスタＴｒを結合しである。こ
の構造でサーモモジュールＭＫｔ流を流すとヒートシン
クＨとパワートランジスタＴｒの間に温Ｋｌｌ。FIG. 3 is a structural side view of a power transistor being cooled using a thermo module. 1M is a thermo module, H is a heat sink, and Tr is a power transistor. In this structure, a thermo module M is interposed between the heat sink H and the power transistor Tr, and the metal plate B on the heat generating side is a heat sink H, which is a metal plate on the heat absorbing side and the power transistor Tr is coupled thereto. With this structure, when the thermo module MKt current flows, the temperature Kll will be between the heat sink H and the power transistor Tr.
ΔＴが発生し、パワートランジスタＴｒがΔＴだけヒー
トシンクＨより低い点に設定することかで會る。This is achieved by setting the power transistor Tr to a point lower than the heat sink H by ΔT.
したがって、ヒートシンクＨｋ冷却ｔ、ｂと、温度差Δ
Ｔを保ってパワートランジスタＴｒが冷却ｒ
され、パワートランジスタの発熱量が増加した場合も、
サーモモジュール１１４に供給されている電流を増加す
れば吸熱量ｑが増加しパワートランジス中
りの温度上昇を阻止することかできる。なお、ヒートシ
ンクＨＫ代えてフィン付のヒートパイプを使用してもよ
い。Therefore, the heat sink Hk cooling t, b and the temperature difference Δ
Even if the power transistor Tr is cooled while maintaining T and the amount of heat generated by the power transistor increases,
If the current supplied to the thermo-module 114 is increased, the amount of heat absorbed q will increase, making it possible to prevent the temperature in the power transistor from rising. Note that a heat pipe with fins may be used instead of the heat sink HK.
第４図はか〜る構造のサーモモジュールＭを利用して、
パワートランジスタの温度上昇を阻止するパワーアンプ
又はプリアンプ回路を示したもので、ＴＩ は入力トラ
ンジスタ、Ｔ寞Ｉ Ｔｓ はドライブトランジスタｓ
Ｔａ ｐ Ｔｓはパワートランジスタ、Ｍは第３図に
示したようなヒートシンクＨ。Figure 4 shows that using a thermo module M with the above structure,
This shows a power amplifier or preamplifier circuit that prevents the temperature rise of the power transistor, where TI is the input transistor, and Ts is the drive transistor s.
Ta p Ts is a power transistor, and M is a heat sink H as shown in FIG.
パワートランジスタ丁ｒを付加しているサーモモジュー
ルである。This is a thermo module equipped with a power transistor.
この回路は電源十ＶＣＣ、−ＶＣＩＣの電流回路にサー
モモジュールＭな挿入し、パワートランジスタＴ４ 、
Ｔｓ のフレフタ電流にはぼ相当する電流をサーモ
モジニールＭＫ流しているので、音声入力信号が増大し
フレフタ電流が増加したとき、つまリバワートランジス
タＴ４ Ｔｌ の発熱量が大ぎ！
くなるとき、ｆ−モモジュールｔｄＫ流れる電流が増大
し、パワートランジスタＴａ、Ｔｓ の温度上外を妨げ
ることになる。サーモモジュールＭの電圧降下は０．３
Ｍ位と低いので、デカップリング用ノコンデンサＣは必
ＩＨｃ応じて付加すればよく、サーモモジュールＭは絶
縁層を設けてパワートランジスタＴａ 、 Ｔｓ を
絶縁１て固定出来るようにすれば１個にしてもよい。In this circuit, a thermo module M is inserted into the current circuit of the power supply 1 VCC, -VCIC, and the power transistor T4,
Since a current roughly equivalent to the flefter current of Ts is flowing through the thermomodineal MK, when the audio input signal increases and the flefter current increases, the amount of heat generated by the re-bower transistor T4 Tl becomes too large! When this happens, the current flowing through the f-mo module tdK increases, which prevents the power transistors Ta and Ts from rising or rising in temperature. The voltage drop of thermo module M is 0.3
Since the M level is low, it is only necessary to add a decoupling capacitor C according to IHc, and the thermo module M can be reduced to one by providing an insulating layer and fixing the power transistors Ta and Ts with insulation 1. Good too.
又、サーそモジュールＭＫ＆す電流はｌ１ｍ回路の電源
電流を利用してもよく、パワーアンプ又はプリアンプの
形式はｌ電源方式の場合でもよいことはいうまでもない
。Further, it goes without saying that the current of the thermoelectric module MK&S may utilize the power supply current of the l1m circuit, and that the power amplifier or preamplifier may be of the l power supply type.
以上説明したよ５に、この発明の半導体素子の冷却装置
は、サーモモジニールの吸熱側プレートに半導体素子な
、発熱側プレートに放熱手段（ヒートシンクなど）を接
合し、前記半導体素子に流れている電流を含んだ供給電
流でサーモモジュール駆動しているので、その冷却作用
も発熱量に応じて発揮されるという効果がある。さらに
パワーアンプなどに適用することによって、回路の温度
補正回路が大幅に省略でき、熱暴走のおそれも少ない、
又、サーモモジュールの冷却効果は速効性であるため、
アンプのフイドラ電流は最初からはぼ一定になるように
設定でき、スイツ牛オンしたＷ＊にもパワーアンプを動
作することができるという利点を有する。As explained above, in the cooling device for a semiconductor device of the present invention, a semiconductor device is connected to the heat absorption side plate of the thermomodineer, and a heat dissipation means (such as a heat sink) is connected to the heat generation side plate of the thermomodineal, so that heat flows to the semiconductor device. Since the thermo module is driven by a supply current that includes current, its cooling effect is also effective in accordance with the amount of heat generated. Furthermore, by applying it to power amplifiers, etc., the temperature correction circuit in the circuit can be largely omitted, and there is less risk of thermal runaway.
In addition, since the cooling effect of the thermo module is fast-acting,
The power amplifier current can be set to be approximately constant from the beginning, and has the advantage that the power amplifier can be operated even when the power amplifier is turned on.
第１図はサーモモジュールの原理を示す図、第２図はサ
ーモモジュールの供給電流をパラメータとした温度特性
図、第３！＠ｌは半導体の冷却に使用゛するサーモモジ
ュールの側面図、第４図はサーモモジュールな組み込ん
だパワーアンプの一実施例を示す回路図である。
図中、Ｔｒ、Ｔ４． Ｔ＠ はパワートランジスタ、Ｍ
はサーモモジュール、Ｈはヒートシンクを示す。
第１凶
第２図
−ａ ９１熱量（Ｗ）Figure 1 is a diagram showing the principle of the thermo module, Figure 2 is a temperature characteristic diagram with the supply current of the thermo module as a parameter, and Figure 3! ＠1 is a side view of a thermo module used for cooling semiconductors, and FIG. 4 is a circuit diagram showing an embodiment of a power amplifier incorporating the thermo module. In the figure, Tr, T4. T@ is a power transistor, M
indicates a thermo module, and H indicates a heat sink. 1st evil figure 2-a 91 calorific value (W)
Claims (1)
れる電＠によって供給するような構成としたことを特徴
とする半導体素子の冷却装置。The semiconductor element to be cooled and the heat dissipation means are connected to a thermoelectric element Km.
1. A cooling device for a semiconductor device, characterized in that the cooling device is configured to supply electricity by flowing electricity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1896282A JPS58137239A (en) | 1982-02-10 | 1982-02-10 | Cooling apparatus for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1896282A JPS58137239A (en) | 1982-02-10 | 1982-02-10 | Cooling apparatus for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58137239A true JPS58137239A (en) | 1983-08-15 |
Family
ID=11986267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1896282A Pending JPS58137239A (en) | 1982-02-10 | 1982-02-10 | Cooling apparatus for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58137239A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5008736A (en) * | 1989-11-20 | 1991-04-16 | Motorola, Inc. | Thermal protection method for a power device |
| WO1993008600A1 (en) * | 1991-10-15 | 1993-04-29 | Velox Computer Technology, Inc. | Intrinsically controlled cooling container |
| US5457342A (en) * | 1994-03-30 | 1995-10-10 | Herbst, Ii; Gerhardt G. | Integrated circuit cooling apparatus |
| EP2317550A1 (en) * | 2009-10-29 | 2011-05-04 | Chia-Cheng Chang | Three-layered cold/hot controller |
-
1982
- 1982-02-10 JP JP1896282A patent/JPS58137239A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5008736A (en) * | 1989-11-20 | 1991-04-16 | Motorola, Inc. | Thermal protection method for a power device |
| WO1993008600A1 (en) * | 1991-10-15 | 1993-04-29 | Velox Computer Technology, Inc. | Intrinsically controlled cooling container |
| US5457342A (en) * | 1994-03-30 | 1995-10-10 | Herbst, Ii; Gerhardt G. | Integrated circuit cooling apparatus |
| EP2317550A1 (en) * | 2009-10-29 | 2011-05-04 | Chia-Cheng Chang | Three-layered cold/hot controller |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4012770A (en) | Cooling a heat-producing electrical or electronic component | |
| JP3414004B2 (en) | Electric vehicle battery temperature controller | |
| JP5353577B2 (en) | heatsink | |
| JPH0722549A (en) | Electronic cooling semiconductor device | |
| JPH1084291A (en) | Cooling system for high output solid-state am transmitter | |
| CN112748633B (en) | Laser light source and laser projection equipment | |
| WO2013113221A1 (en) | Heat sensitive device and heat dissipation system thereof | |
| US4153107A (en) | Temperature equalizing element for a conduction cooling module | |
| KR20030068633A (en) | Integrated circuit cooler using thermoelectric element | |
| JP2010245181A (en) | Electronic equipment cooling device | |
| JPS58137239A (en) | Cooling apparatus for semiconductor element | |
| JP2924369B2 (en) | Heat pump device | |
| RU2133084C1 (en) | Thermoelectric semiconducting device for heat transfer and temperature stabilization of microassemblies | |
| JP2004200428A (en) | Cooling system | |
| US3248471A (en) | Heat sinks | |
| JP2006041355A (en) | Cooling system | |
| CN212132716U (en) | Electrical apparatus box structure and air condensing units | |
| CN210986789U (en) | A multimedia host cooling device, a multimedia host and a vehicle | |
| US20200258809A1 (en) | Semiconductor module and method of evaluating semiconductor module | |
| Wang et al. | Phase change materials at the cold/hot sides of thermoelectric cooler for temperature control | |
| CN101541161A (en) | On-vehicle power amplifier heat dissipating device and on-vehicle power amplifier system | |
| CN216901447U (en) | Control circuit of thermoelectric refrigerator | |
| CN218941495U (en) | A cooling type remote information monitoring data acquisition box | |
| JPH0715140Y2 (en) | Electronic component cooling system | |
| JPH0715962B2 (en) | Semiconductor device |