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JPS5898917U - 椅子式マツサ−ジ機に付設した腕引伸ばし装置 - Google Patents

椅子式マツサ−ジ機に付設した腕引伸ばし装置

Info

Publication number
JPS5898917U
JPS5898917U JP19741681U JP19741681U JPS5898917U JP S5898917 U JPS5898917 U JP S5898917U JP 19741681 U JP19741681 U JP 19741681U JP 19741681 U JP19741681 U JP 19741681U JP S5898917 U JPS5898917 U JP S5898917U
Authority
JP
Japan
Prior art keywords
chair
shaft
machine
screw shaft
type pine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19741681U
Other languages
English (en)
Other versions
JPS6110667Y2 (ja
Inventor
信夫 藤本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Medical Instruments Mfg Co Ltd
Original Assignee
Fuji Medical Instruments Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Medical Instruments Mfg Co Ltd filed Critical Fuji Medical Instruments Mfg Co Ltd
Priority to JP19741681U priority Critical patent/JPS5898917U/ja
Publication of JPS5898917U publication Critical patent/JPS5898917U/ja
Application granted granted Critical
Publication of JPS6110667Y2 publication Critical patent/JPS6110667Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Massaging Devices (AREA)
  • Orthopedics, Nursing, And Contraception (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
本考案の実施例図で、第１図はもみ部の作動装　置を省
略した本装置の正面図、第２図は第１図のＡＡ線断面図
、第３図は本装置を付設したマツサージ機の側面図であ
る。 １・・・・・・機筺、２・・・・・・底板、３，３′・
・・・・・支持板、４・・・・・・電動機、５・・・・
・・減速機、６・・・・・・原動軸、７・・・・・・螺
軸、８・・・・・・筒軸、９・・・・・・ナツト、１０
・・・・・・回転軸、１２・・・・・・運動杆、１２′
・・・・・・握り、１３・・・・・・・スイッチ、１４
・・・・・・作動杆、′１５・・・・・・操作杆、１６
・・・・・・突片、１７・・・・・・孔、１８．１９・
・・・・・ストン／＜− ７°）２・ ：１　　　　　　　′°″］ （：；： ｉ：弓 ：Ｉ ：ｌ　　　　　　　　、； ・　　１

Claims (1)

    【実用新案登録請求の範囲】
  1. もみ部の作動装置を内蔵した機筺内の一側底板上に一対
    の支持板を対設し、該板に減速機を連設した電動機を揺
    動可能に枢着し、該電話機の原動軸に螺軸を縦長方向へ
    接続し、該螺軸の回転により昇降する筒軸を上端に螺着
    し、該筒軸の上端は上記機筺の上段に横設した回転軸に
    連結し、該回転軸は両端部を機筺外に突出して延長部を
    形成し゛　　　　該延長部に前方へ突出した一対の運動
    杆の下端をそれぞれ固着し、前記筒軸の昇降はスイッチ
    操作で行うように構成したことを特徴とする椅子式マツ
    サージ機に付設し腕引伸ばし装置。　　５
JP19741681U 1981-12-26 1981-12-26 椅子式マツサ−ジ機に付設した腕引伸ばし装置 Granted JPS5898917U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19741681U JPS5898917U (ja) 1981-12-26 1981-12-26 椅子式マツサ−ジ機に付設した腕引伸ばし装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19741681U JPS5898917U (ja) 1981-12-26 1981-12-26 椅子式マツサ−ジ機に付設した腕引伸ばし装置

Publications (2)

Publication Number Publication Date
JPS5898917U true JPS5898917U (ja) 1983-07-05
JPS6110667Y2 JPS6110667Y2 (ja) 1986-04-05

Family

ID=30110639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19741681U Granted JPS5898917U (ja) 1981-12-26 1981-12-26 椅子式マツサ−ジ機に付設した腕引伸ばし装置

Country Status (1)

Country Link
JP (1) JPS5898917U (ja)

Cited By (40)

* Cited by examiner, † Cited by third party
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US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7066194B2 (en) 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7270709B2 (en) 2002-07-17 2007-09-18 Applied Materials, Inc. Method and apparatus of generating PDMAT precursor
US7312128B2 (en) 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7342984B1 (en) 2003-04-03 2008-03-11 Zilog, Inc. Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7416979B2 (en) 2001-07-25 2008-08-26 Applied Materials, Inc. Deposition methods for barrier and tungsten materials
US7422637B2 (en) 2002-10-09 2008-09-09 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7464917B2 (en) 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
US7514358B2 (en) 2002-03-04 2009-04-07 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7517775B2 (en) 2003-10-10 2009-04-14 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7540920B2 (en) 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US7547952B2 (en) 2003-04-04 2009-06-16 Applied Materials, Inc. Method for hafnium nitride deposition
US7560352B2 (en) 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US7611990B2 (en) 2001-07-25 2009-11-03 Applied Materials, Inc. Deposition methods for barrier and tungsten materials
US9032906B2 (en) 2005-11-04 2015-05-19 Applied Materials, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US9209074B2 (en) 2001-07-25 2015-12-08 Applied Materials, Inc. Cobalt deposition on barrier surfaces

Cited By (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501344B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7235486B2 (en) 2000-06-28 2007-06-26 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7115494B2 (en) 2000-06-28 2006-10-03 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US9587310B2 (en) 2001-03-02 2017-03-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US9209074B2 (en) 2001-07-25 2015-12-08 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US7416979B2 (en) 2001-07-25 2008-08-26 Applied Materials, Inc. Deposition methods for barrier and tungsten materials
US7611990B2 (en) 2001-07-25 2009-11-03 Applied Materials, Inc. Deposition methods for barrier and tungsten materials
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7352048B2 (en) 2001-09-26 2008-04-01 Applied Materials, Inc. Integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7473638B2 (en) 2002-01-26 2009-01-06 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US7094685B2 (en) 2002-01-26 2006-08-22 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7429516B2 (en) 2002-02-26 2008-09-30 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7514358B2 (en) 2002-03-04 2009-04-07 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7588736B2 (en) 2002-07-17 2009-09-15 Applied Materials, Inc. Apparatus and method for generating a chemical precursor
US7270709B2 (en) 2002-07-17 2007-09-18 Applied Materials, Inc. Method and apparatus of generating PDMAT precursor
US7429361B2 (en) 2002-07-17 2008-09-30 Applied Materials, Inc. Method and apparatus for providing precursor gas to a processing chamber
US7569191B2 (en) 2002-07-17 2009-08-04 Applied Materials, Inc. Method and apparatus for providing precursor gas to a processing chamber
US7066194B2 (en) 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
US7294208B2 (en) 2002-07-29 2007-11-13 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US7422637B2 (en) 2002-10-09 2008-09-09 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US7540920B2 (en) 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7402210B2 (en) 2002-11-14 2008-07-22 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7591907B2 (en) 2002-11-14 2009-09-22 Applied Materials, Inc. Apparatus for hybrid chemical processing
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7342984B1 (en) 2003-04-03 2008-03-11 Zilog, Inc. Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character
US7547952B2 (en) 2003-04-04 2009-06-16 Applied Materials, Inc. Method for hafnium nitride deposition
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US7517775B2 (en) 2003-10-10 2009-04-14 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7572715B2 (en) 2004-12-01 2009-08-11 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7560352B2 (en) 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7521365B2 (en) 2004-12-01 2009-04-21 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7312128B2 (en) 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7464917B2 (en) 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
US9032906B2 (en) 2005-11-04 2015-05-19 Applied Materials, Inc. Apparatus and process for plasma-enhanced atomic layer deposition

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Publication number Publication date
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