JPS59123276A - Manufacturing method of pressure transducer - Google Patents
Manufacturing method of pressure transducerInfo
- Publication number
- JPS59123276A JPS59123276A JP57233039A JP23303982A JPS59123276A JP S59123276 A JPS59123276 A JP S59123276A JP 57233039 A JP57233039 A JP 57233039A JP 23303982 A JP23303982 A JP 23303982A JP S59123276 A JPS59123276 A JP S59123276A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- pressure element
- substrate
- double
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体抵抗拡散型圧力素子を用いた圧力変換器
の製造方法に関し、さらに詳細には、基板ｌこ前記圧力
素子を接着固定する改良方法によって、温度特性のばら
つきの小さい前記圧力変換器を商い生産性で量産する製
造方法に係る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a pressure transducer using a semiconductor resistance diffusion type pressure element, and more particularly to a method for manufacturing a pressure transducer using a semiconductor resistance diffusion type pressure element, and more particularly, it relates to a method for manufacturing a pressure transducer using a semiconductor resistance diffusion type pressure element, and more particularly to a method for manufacturing a pressure transducer using a semiconductor resistance diffusion type pressure element. The present invention relates to a manufacturing method for mass-producing the pressure transducer having small variations in temperature characteristics with high productivity.
背景技術とその問題点
半導体抵抗拡散型圧力素子を用いた従来の圧力変換器に
おいては、第１図に示すように、シリコン単結晶板に抵
抗素子を拡散形成した圧力素子（１）が、軟かい接着剤
（２）、例えば室温硬化型シリコτン接着剤によって基
板（３）に接着固定されている。BACKGROUND TECHNOLOGY AND PROBLEMS In a conventional pressure transducer using a semiconductor resistance diffusion type pressure element, as shown in Fig. 1, the pressure element (1) in which a resistance element is diffused into a silicon single crystal plate is a soft material. It is adhesively fixed to the substrate (3) with an adhesive (2), for example, a room temperature curing silicone adhesive.
なお圧力素子（１１は、第２図及び第３図に示すように
、下面中央部に受圧凹部００）が形成されているので、
との受圧凹部（１０１の外周囲に枠形面部側を備え、こ
の枠形面部（１４）において基板（３）に接着されてい
る。In addition, since the pressure element (11 has a pressure receiving recess 00 formed in the center of the lower surface as shown in FIGS. 2 and 3),
A frame-shaped surface portion is provided on the outer periphery of the pressure-receiving recess (101), and the frame-shaped surface portion (14) is bonded to the substrate (3).
基板（３１には電極棒（４） （５）が取付けられ、こ
れらの電極棒はそれぞれワイヤ（６） （７１によって
圧力素子（１）に電気的に接続されている。基板（３）
の上面にカバー（８）が気密状態に設けられ、圧力素子
（，１１の上面を外気から遮断している。基板（３）の
中央部とは受圧パイプ０７）か取付けられ、との受圧パ
イプ（Ｉηによって形成された受圧口（９）ヲ通して与
えられる測定すべき圧力によって圧力素子（１１に歪が
生じて抵抗素子の抵抗に変化が起こる。この抵抗の変化
をワイヤて被測足が電気的に変換される。Electrode rods (4) (5) are attached to the substrate (31), and these electrode rods are respectively electrically connected to the pressure element (1) by wires (6) (71).
A cover (8) is provided on the top surface in an airtight state to isolate the top surface of the pressure element (, 11) from the outside air. The pressure to be measured applied through the pressure receiving port (9) formed by Iη causes strain in the pressure element (11), causing a change in the resistance of the resistance element. converted electrically.
このように構成された圧力変換器においては、接着剤（
２）の存在によって圧力素子（１）と基板（３）との熱
膨張係数の差から生ずる歪が小さく押えられている。し
かし、接着剤（２）は普通手作業によって基板（３）上
に塗布されて竹串などで均一ことならされてから、これ
に圧力素子（ＩＩが接着固定される。この作業は非常に
熟練を要して生産性が悪く、１だ塗布厚のばらつきを生
ずるため、製造された圧力変換器間で温度特性のばらつ
きが大きいなどの不都合を生じている。In a pressure transducer configured in this way, an adhesive (
2), the strain caused by the difference in thermal expansion coefficients between the pressure element (1) and the substrate (3) is kept small. However, the adhesive (2) is usually manually applied onto the substrate (3) and evenly distributed with a bamboo skewer, and then the pressure element (II) is adhesively fixed thereto.This work requires a lot of skill. This leads to poor productivity and variations in coating thickness, resulting in disadvantages such as large variations in temperature characteristics among manufactured pressure transducers.
寸だ、従来は比較的大きい寸法（例えば４×４ｗ）の圧
力素子が使用されていたが、ウエーノ・から切り取る圧
力素子用ペレットの収碧を上げて圧力素子のコスト低下
を計るなどのため、圧力素子が小型化する（例えば２
Ｘ ２ ｒｒａｎ ）傾向にあるため、圧力素子と基板
との接着作業は益々能率が悪くなり、自動化も困難にな
っている。Previously, pressure elements with relatively large dimensions (for example, 4 x 4W) were used, but in order to reduce the cost of pressure elements by increasing the yield of pressure element pellets cut from Ueno. Pressure elements become smaller (e.g. 2
X 2 rran ), the bonding work between the pressure element and the substrate is becoming increasingly inefficient and difficult to automate.
発明の目的
本発明は、前記の問題点に鑑み、従来のものより小型の
半得体抵抗拡散型圧力素子を基板に商い生産性でかつ均
一に接着することによって、低コストでかつ温度特性の
ばらつきの小さい圧力変換器の製造方法を提供するもの
である。Purpose of the Invention In view of the above-mentioned problems, the present invention is aimed at reducing the variation in temperature characteristics at low cost by using a semiconductor resistor diffusion type pressure element smaller than the conventional one and bonding it uniformly and productively to a substrate. The present invention provides a method for manufacturing a small pressure transducer.
発明の概要
本発明は前記目的を達成するため下記工程を含むことを
特徴とする圧力変換器の製造方法である。SUMMARY OF THE INVENTION In order to achieve the above object, the present invention is a method of manufacturing a pressure transducer characterized by including the following steps.
（ａ） 所定形状をした両面接着性フィルム状接着剤
の一方の面を基板の一方の面に対向するように配置して
接着する工程と、
（ｂ） 前記フィルム状接着剤の他方の面に半導体圧
力素子を配置して接着固定する工程。(a) a step of arranging and adhering one surface of a double-sided adhesive film adhesive having a predetermined shape so as to face one surface of a substrate; (b) a step of adhering the double-sided adhesive film adhesive having a predetermined shape to the other surface of the substrate; Process of arranging and adhesively fixing semiconductor pressure elements.
実施例
以下本発明による圧力変換器の製造方法の実施例を第４
図〜第８図について説明する。なおこれらの図面におい
て第１図〜第６図の場合と同様の部分には同じ参照番号
を用いである。EXAMPLE The following is a fourth example of the method for manufacturing a pressure transducer according to the present invention.
8 will be explained. In these drawings, the same reference numerals are used for the same parts as in FIGS. 1 to 6.
またこの実施例に用いられる圧力素子（１）は第２図及
び第６図に示す従来の圧力素子と同形であってよいので
、以下において第２図及び第６図を参照しつつ説ツ」す
る。Furthermore, since the pressure element (1) used in this embodiment may have the same shape as the conventional pressure element shown in FIGS. 2 and 6, it will be explained below with reference to FIGS. 2 and 6. do.
この実施例に用いられる圧力素子は片面に抵抗素子が拡
散形成された１辺が２ｗｎの正方形で、厚さ約３００μ
のシリコン単結晶板からなり、片面にはエツチングによ
り１辺が１胴の正方形の受圧凹部（１０）が形成されて
いる。第８図は本発明で使用される両面接着シート（１
６）の材料である両面接着テープ（同を示し、この両面
接着テープ（１５）は両面接着性フィルム状接着剤０υ
と、この両面に接着された剥離性フィルム［２１ｆ１３
＋とからなっている。前記フィルム状接着剤（１１）は
好ましくは例えば熱硬化性シリコーン樹脂からなる。The pressure element used in this example is a square with a resistance element diffused on one side, 2wn on each side, and approximately 300μ thick.
A square pressure-receiving recess (10) with one cylinder on each side is formed on one side by etching. Figure 8 shows the double-sided adhesive sheet (1) used in the present invention.
6) is the material of the double-sided adhesive tape (the same is shown, and this double-sided adhesive tape (15) is a double-sided adhesive film adhesive 0υ
and a removable film [21f13
It consists of +. The film adhesive (11) is preferably made of, for example, a thermosetting silicone resin.
斥力素子（１）を基板（３）に接着固定するためには、
まず両面接着テープ（２）を圧力素子（１）の受圧凹部
（１０）の外周囲に設けられている枠形面部（圓と一致
する例えば正方形の枠形状の両面接着シート０６）に切
断加工する。第７図にはこの切断加工後の両面接着シー
ト０６）の斜視図が示されている。次に、この切断加工
された両面接着シー） （ｌｆｉｌの２枚の剥離性フィ
ルムの一方のみ（例えば０３））を剥離してフィルム状
接着剤旧）の一方の面を露出させる。この接７４炸１ｔ
ｌｌｌの癌出向を基板（３）に対向させて基板（３）の
受圧開口部（！りを囲む所定位置に接着する。次に、両
面接着シート（１６＋の残りの剥離性フィルム０２）を
剥離してフィルム状接着剤０υの他方の面を露出させ、
この露出面に圧力素子（１１の受圧凹部ＱＯ＋の外周囲
に設けられている枠形面部０４）を一致さ昼て圧着し、
所定温度（例えば１２０〜１４０Ｃ）で加熱硬化させて
、圧力素子（１１を基板（３１に接着固定する。In order to adhesively fix the repulsive force element (1) to the substrate (3),
First, the double-sided adhesive tape (2) is cut into a frame-shaped surface portion (for example, a square frame-shaped double-sided adhesive sheet 06 that matches the circle) provided around the outer periphery of the pressure receiving recess (10) of the pressure element (1). . FIG. 7 shows a perspective view of the double-sided adhesive sheet 06) after this cutting process. Next, this cut double-sided adhesive sheet (only one of the two releasable films of lfil (for example, 03)) is peeled off to expose one side of the film adhesive. This connection 74 bombs 1t
Face the substrate (3) with the 1ll cancer transfer sheet and adhere it to the predetermined position surrounding the pressure-receiving opening (!) of the substrate (3).Next, peel off the double-sided adhesive sheet (remaining releasable film 02 of 16+). to expose the other side of the film adhesive 0υ,
A pressure element (frame-shaped surface part 04 provided around the outer periphery of the pressure receiving recess QO+ of 11) is aligned and crimped onto this exposed surface,
The pressure element (11) is adhesively fixed to the substrate (31) by heating and curing at a predetermined temperature (for example, 120 to 140 C).
発明の効果
本発明に使用される両面接着性フィルム状接着剤は、従
来の手作業により塗布される接着剤に比べて厚さの均一
性が著しくすぐれているため、圧力素子の温度特性のば
らつきが従来の接着方法によって得られるものよりも非
常に小さくするときができる。また、本発明の方法はそ
の工程が自動化に好適であるため、量産化が容易である
。したがって、本発明の方法によって、半導体抵抗拡散
型等の半導体圧力素子を用いた圧力変換器が低コストで
かつ温度特性のばらつきを小さくして量産することがで
きる。Effects of the Invention The double-sided adhesive film adhesive used in the present invention has significantly better thickness uniformity than conventional adhesives that are applied by hand, so it reduces variations in the temperature characteristics of pressure elements. can be made much smaller than that obtained by conventional bonding methods. Furthermore, since the process of the method of the present invention is suitable for automation, mass production is easy. Therefore, by the method of the present invention, a pressure transducer using a semiconductor pressure element such as a semiconductor resistance diffusion type can be mass-produced at low cost and with reduced variation in temperature characteristics.
第１図は従来の方法で圧力素子が基板に接着されている
圧力変換器の概略図、第２図は第１図に示す圧力素子の
縦断面図、第３図は第２図の圧力第
素子を受圧凹部側から見た平面図、第４−６図は本発明
の方法によって圧力素子を基板に接着固定する工程を順
次示す縦断面図、第７図は第４〜第６図に示す面画接着
シートの斜視図、第８図は第７図に示す両面接着シート
の材料である両面接着テープの縦断面図である。
なお、図面に用いられている符号において、（１１・・
・・・・・・−・・・・・ 半導体圧力素子（２）・・
・・・・・・・・・・・・・接着剤（３）・・・・・・
−・・・・・基板
（７）・・・・・・・・・・・・・・・ワイヤ（９）・
・・・・・・・・・・・・・・受圧開口部００）・・・
・・・・・・・・・・・・受圧凹部（１υ・・・・・・
・・・・・・・・フィルム状接層剤［２＋０３＋・・・
・・・・・・・・・剥離性フィルム（圓・・・−・・・
・・・・・・・枠形面部（１５）・・・・・・・・・・
・・・・・両面接層テープ（Ｉ６）・・・・・・・・・
・・・・・・両面Ｍ着シートである。
代理人 上屋 勝
〃 常 包 芳 男
〃 杉浦俊貴Fig. 1 is a schematic diagram of a pressure transducer in which a pressure element is bonded to a substrate by a conventional method, Fig. 2 is a longitudinal cross-sectional view of the pressure element shown in Fig. A plan view of the element viewed from the side of the pressure-receiving recess, FIGS. 4-6 are longitudinal sectional views sequentially showing the steps of adhesively fixing the pressure element to the substrate by the method of the present invention, and FIG. 7 is shown in FIGS. 4-6. FIG. 8 is a perspective view of the surface-image adhesive sheet, and FIG. 8 is a longitudinal sectional view of the double-sided adhesive tape, which is the material of the double-sided adhesive sheet shown in FIG. In addition, in the symbols used in the drawings, (11...
・・・・・・－・・・・・・ Semiconductor pressure element (2)...
・・・・・・・・・・・・Adhesive (3)・・・・・・
-... Board (7)... Wire (9)...
...... Pressure receiving opening 00)...
・・・・・・・・・Pressure receiving recess (1υ・・・・・・
...Film adhesive [2+03+...
......Peelable film (round...
......Frame-shaped surface part (15)...
・・・・・・Double-sided layered tape (I6)・・・・・・・・・
...It is a double-sided M-wear sheet. Agent: Masaru Ueya, Yoshio Tsune, Toshiki Sugiura
Claims (1)
の一方の面を基板の一方の面に対向するように配置して
接着する工程さ、 （ｂｌ 前記フィルム状接着剤の他方の面？こ半導体
圧力素子を配置して接着固定する工程とを含む圧力変換
器の製造方法。[Claims] fa) A step of arranging and adhering one side of a double-sided adhesive film adhesive having a predetermined shape to face one side of a substrate, A method of manufacturing a pressure transducer comprising the step of arranging and adhesively fixing a semiconductor pressure element on the other side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57233039A JPS59123276A (en) | 1982-12-28 | 1982-12-28 | Manufacturing method of pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57233039A JPS59123276A (en) | 1982-12-28 | 1982-12-28 | Manufacturing method of pressure transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59123276A true JPS59123276A (en) | 1984-07-17 |
Family
ID=16948840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57233039A Pending JPS59123276A (en) | 1982-12-28 | 1982-12-28 | Manufacturing method of pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59123276A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8552514B2 (en) | 2010-07-02 | 2013-10-08 | Denso Corporation | Semiconductor physical quantity sensor |
| US8733175B2 (en) | 2011-03-23 | 2014-05-27 | Denso Corporation | Pressure sensor |
-
1982
- 1982-12-28 JP JP57233039A patent/JPS59123276A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8552514B2 (en) | 2010-07-02 | 2013-10-08 | Denso Corporation | Semiconductor physical quantity sensor |
| US8733175B2 (en) | 2011-03-23 | 2014-05-27 | Denso Corporation | Pressure sensor |
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