JPS59151436A - Resin sealing process of semiconductor device - Google Patents
Resin sealing process of semiconductor deviceInfo
- Publication number
- JPS59151436A JPS59151436A JP2600183A JP2600183A JPS59151436A JP S59151436 A JPS59151436 A JP S59151436A JP 2600183 A JP2600183 A JP 2600183A JP 2600183 A JP2600183 A JP 2600183A JP S59151436 A JPS59151436 A JP S59151436A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- synthetic resin
- synthetic
- semiconductor device
- cavities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 229920005989 resin Polymers 0.000 title claims abstract description 22
- 239000011347 resin Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 10
- 238000007789 sealing Methods 0.000 title claims description 13
- 239000000057 synthetic resin Substances 0.000 claims abstract description 47
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 47
- 239000003822 epoxy resin Substances 0.000 abstract description 6
- 229920000647 polyepoxide Polymers 0.000 abstract description 6
- 239000000945 filler Substances 0.000 abstract description 3
- 239000003381 stabilizer Substances 0.000 abstract description 2
- 239000012530 fluid Substances 0.000 abstract 2
- 239000004593 Epoxy Substances 0.000 abstract 1
- 239000004848 polyfunctional curative Substances 0.000 abstract 1
- 238000000465 moulding Methods 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/46—Means for plasticising or homogenising the moulding material or forcing it into the mould
- B29C45/462—Injection of preformed charges of material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明はトランジスタ、半導体集積回路等の半導体装
置の樹脂封止方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resin sealing method for semiconductor devices such as transistors and semiconductor integrated circuits.
第1図は半導体集積回路等の半導体装置、の樹脂封止用
の成形型を示している。この成形型1の中央には封止用
合成樹脂を注入するためのスプール2が設けられるとと
もに、このスプール2に直交する方向に溶融合成樹脂の
通路としてランナ3が形成され、このランナ3の両端部
には樹脂の流れを均一化するため、放射状に複数のラン
ナ4が形(1)
成されている。そして、平行に配置された各ランナ4の
両側部には、半導体装置を挿入し、封止用合成樹脂を一
定の形に成形するための複数のキャビティ5が一定の間
隔で形成されている。FIG. 1 shows a mold for resin-sealing semiconductor devices such as semiconductor integrated circuits. A spool 2 for injecting a sealing synthetic resin is provided in the center of the mold 1, and a runner 3 is formed in a direction perpendicular to the spool 2 as a passage for the molten synthetic resin. A plurality of runners 4 are formed in a radial shape (1) in order to equalize the flow of resin. A plurality of cavities 5 are formed at regular intervals on both sides of each runner 4 arranged in parallel, into which semiconductor devices are inserted and for molding synthetic resin for sealing into a prescribed shape.
この成形型1において、スプール2、ランナ3.4の占
める体積と、各キャビティ5の占める体積とを比較した
場合、・成形品の大きさにもよるが、スプール2及びラ
ンナ3.4の体積比率は全体の40%程度を占めている
のが一般的である。第2図は1.、この成形型1におい
て成形された合成樹脂成形品の第1図の■−■線に沿う
スプール2及びランナ3.4部分の断面を示している。In this mold 1, when comparing the volume occupied by the spool 2 and runners 3.4 with the volume occupied by each cavity 5, the volume of the spool 2 and runners 3.4 varies depending on the size of the molded product. Generally, the ratio is around 40% of the total. Figure 2 shows 1. , shows a cross section of the spool 2 and runner 3.4 portion of the synthetic resin molded product molded in this mold 1 along the line ■-■ in FIG.
この図からも明らかなように、成形合成樹脂6において
、スプール2及びランナ3.4の合成樹脂6A、6Bの
占める割合は極めて大であることが理解できる。As is clear from this figure, it can be seen that in the molded synthetic resin 6, the proportion of the synthetic resins 6A and 6B of the spool 2 and runner 3.4 is extremely large.
このように大きな体積を′占めるスプール2、ランナ3
.4において、成形固化された合成樹脂は全く無駄にな
り、製品の価格に大きく影響を与えている。特に、半導
体装置の樹脂封止用合成樹脂は、半導体装置の電気的特
性、堅牢性、安定性等(2)
を確保するために、純度の高いエポキシ樹脂等が用いら
れており、製品価格上相当な比重を占めている。The spool 2 and runner 3 occupy a large volume in this way.
.. In No. 4, the molded and solidified synthetic resin is completely wasted, which greatly affects the price of the product. In particular, synthetic resins for resin encapsulation of semiconductor devices use high-purity epoxy resins to ensure the electrical characteristics, robustness, stability, etc. (2) of semiconductor devices, which increases the product price. It occupies a considerable proportion.
この発明は、このような樹脂封止に用いる合成樹脂の無
駄をなくし、製品価格の低下を図ることができる半導体
装置の樹脂封止方法の提供を目的とする。An object of the present invention is to provide a method for resin-sealing a semiconductor device, which can eliminate the waste of synthetic resin used for such resin-sealing and reduce the product price.
この発明は、成形型のキャビティ内に樹脂封止すべき半
導体装置を挿入した後、第1の合成樹脂を充填するとと
もに、この第1の合成樹脂の後方から第2の合成樹脂を
充填し、半導体装置に第1の合成樹脂で封止を施すこと
を特徴とする。In the present invention, after inserting a semiconductor device to be resin-sealed into a cavity of a mold, a first synthetic resin is filled, and a second synthetic resin is filled from behind the first synthetic resin. The method is characterized in that the semiconductor device is sealed with a first synthetic resin.
以下、この発明を図面に示した実施例に基づき詳細に説
明する。Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.
第3図は第1図に示す成形型と同一の成形型を示し、こ
の成形型1のスプール2、ランナ3.4において、破線
で包囲した部分7と成形型1の全体の体積を算出する。FIG. 3 shows the same mold as shown in FIG. 1, and in the spool 2 and runner 3.4 of this mold 1, the volume of the portion 7 surrounded by the broken line and the entire volume of the mold 1 is calculated. .
この算出結果に基づき、第4図に示すように、封止用合
成樹脂を計量し、この場合、成形型1のキャビティ5及
びその近傍に(3)
おけるランナ4に至る第1の合成樹脂8A、8Bに対し
、前記部分7に用いる第2の合成樹脂9の容量を設定す
る。第1の合成樹脂8A、8Bは充填材、硬化材、安定
材等において、半導体装置の電気的特性、或いは成形圧
力による機械的歪の発生等を考慮して高純度で流動性の
高いエポキシ樹脂を用いる。一方、第2の合成樹脂9は
このような高純度のものに対し充填材を多くし、第1の
合成樹脂8A、8Bに混じり合わないように硬化材を用
いて流動性の低い汎用エポキシ樹脂等を用いるものとす
る。Based on this calculation result, the synthetic resin for sealing is measured as shown in FIG. , 8B, the capacity of the second synthetic resin 9 used for the portion 7 is set. The first synthetic resins 8A and 8B are epoxy resins with high purity and high fluidity, which are used as fillers, hardening materials, stabilizers, etc., taking into consideration the electrical characteristics of semiconductor devices or the occurrence of mechanical distortion due to molding pressure. Use. On the other hand, the second synthetic resin 9 is a general-purpose epoxy resin with low fluidity, with a large amount of filler and a curing agent so as not to mix with the first synthetic resins 8A and 8B. etc. shall be used.
次に、第5図に示すように、成形型1のキャビティ5の
内部に半導体装置8を挿入した後、前記のように計量さ
れた第1の合成樹脂8A、8B、その後方に第2合成樹
脂9をプランジャ10によって矢印11の方向から順に
成形型1のキャビティ5内に加熱しつつ充填し、加圧成
形をする。Next, as shown in FIG. 5, after inserting the semiconductor device 8 into the cavity 5 of the mold 1, the first synthetic resins 8A and 8B weighed as described above are placed behind the second synthetic resin. The resin 9 is heated and filled into the cavity 5 of the mold 1 sequentially from the direction of the arrow 11 using the plunger 10, and pressure molding is performed.
このようにすれば、純度の高い第1の合成樹脂8A、8
Bは、所望の半導体装置8を形成するためのキャビティ
5に向うが、このとき、第2の合(4)
成樹脂9は第1の合成樹脂8A、8Bの後方から圧力を
伝達して移送する役割を成す。この結果、第3図におい
て、破線で囲まれた部分7は第2の合成樹脂9で占めら
れ、キャビティ5における半導体装置8は従来と同様に
高純度の第1の合成樹脂8A、8Bで封止されることに
なる。・ 。In this way, the first synthetic resins 8A, 8 with high purity
B goes to the cavity 5 for forming the desired semiconductor device 8, but at this time, in the second synthesis (4), the synthetic resin 9 is transferred by transmitting pressure from the rear of the first synthetic resins 8A and 8B. fulfill the role of As a result, in FIG. 3, the portion 7 surrounded by the broken line is occupied by the second synthetic resin 9, and the semiconductor device 8 in the cavity 5 is sealed with the high-purity first synthetic resins 8A and 8B as in the conventional case. It will be stopped.・ .
なお、前記実施例の場合、成形型との関係で計量化され
た第1及び第2の合成樹脂8A、8B、9を円板状の形
態としたが、第6図に示すように第1及び第2の合成樹
脂8A、8B、9の計量したものを一体に形成しても良
い。ま夫、このような固体状のものでなく、第1及び第
2の合成樹脂に粒状のものを用いても同様の効果が得ら
れることは言うまでもない。In the case of the above embodiment, the first and second synthetic resins 8A, 8B, and 9, which were weighed in relation to the mold, were shaped like disks, but as shown in FIG. The measured amounts of the second synthetic resins 8A, 8B, and 9 may be integrally formed. It goes without saying that the same effect can be obtained by using granular resins for the first and second synthetic resins instead of solid resins.
また、第1及び第2の合成樹脂を色分けすることにより
、成形上の第1及び第2の合成樹脂の混じり合いを検知
するようにしても良く、このようにすれば、成形条件の
変動等による合成樹脂間の混入による不良品の発生を成
形品の色彩の変化で検出することがで入る。Furthermore, by color-coding the first and second synthetic resins, it may be possible to detect the mixture of the first and second synthetic resins during molding. The occurrence of defective products due to contamination between synthetic resins can be detected by detecting changes in the color of molded products.
(5)
さらに、前記実施例では半導体集積回路の樹脂封止につ
いて説明したが、このような樹脂封止方法はトランジス
タや壱の他の電子部品についても同様に行うことができ
、同様の効果が期待できる。(5) Furthermore, in the above embodiment, resin encapsulation of a semiconductor integrated circuit was explained, but such a resin encapsulation method can be similarly applied to transistors and other electronic components, and similar effects can be obtained. You can expect it.
以上説明したようにこの発明によれば、半導体装置を封
止する第1の合成樹脂には従来と同様の純度の高いもの
を使用し、また、第1の合成樹脂を成形用キャビティに
移送するための第2の合成樹脂に□は純度の低い安価な
ものを使用することにより、製品の品質を一定に維持す
るとともに、高純度の合成樹脂を節減し、その無駄を無
くし、製品の製造価格の低減を図ることができる。As explained above, according to the present invention, the first synthetic resin for sealing the semiconductor device is of high purity as in the conventional method, and the first synthetic resin is transferred to the molding cavity. By using an inexpensive, low-purity synthetic resin for the second synthetic resin, we can maintain a constant product quality, save on high-purity synthetic resin, eliminate its waste, and reduce the manufacturing cost of the product. It is possible to reduce the
第1図は成形型を示す説明図、第2図は第1図のn−n
線に沿う合成樹脂成形品の断面図、第3図はこの発明の
半導体装置の樹脂封止方法を示す成形型の説明図、第4
図は封止用樹脂の説明図、第5図はこの発明の半導体装
置の樹脂封止方法を示す説明図、第6・図は封止用合成
樹脂の構造を示す斜視図である。
(6)
1・・・成形型、2・・・スプール、3.4・・・ラン
ナ、5・・・キャビティ、8・・・半導体装置、8A、
8B・・・第1の合成樹脂、9・・・第2の合成樹脂。
(7)
第1図
第2図
b bじ
第3図
第4図
第5図
第6図
、4+1−
5j−3235Figure 1 is an explanatory diagram showing the mold, Figure 2 is n-n of Figure 1.
FIG. 3 is a cross-sectional view of the synthetic resin molded product taken along the line; FIG.
FIG. 5 is an explanatory diagram showing a resin sealing method for a semiconductor device of the present invention, and FIG. 6 is a perspective view showing the structure of a synthetic resin for sealing. (6) 1... Molding mold, 2... Spool, 3.4... Runner, 5... Cavity, 8... Semiconductor device, 8A,
8B...first synthetic resin, 9...second synthetic resin. (7) Figure 1 Figure 2 b b Figure 3 Figure 4 Figure 5 Figure 6, 4+1- 5j-3235
Claims (1)
入した後、第1の合成樹脂を充填するとともに、この第
1の合成樹脂の後方から第2の合成樹脂を充填し、半導
体装置に第1の合成樹脂で封止を施すことを特徴とする
半導体装置の樹脂封止方法。After inserting the semiconductor device to be resin-sealed into the cavity of the mold, a first synthetic resin is filled, and a second synthetic resin is filled from behind the first synthetic resin, and the semiconductor device is filled with a second synthetic resin. 1. A resin sealing method for a semiconductor device, characterized in that the resin sealing method is performed using a synthetic resin according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2600183A JPS59151436A (en) | 1983-02-17 | 1983-02-17 | Resin sealing process of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2600183A JPS59151436A (en) | 1983-02-17 | 1983-02-17 | Resin sealing process of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59151436A true JPS59151436A (en) | 1984-08-29 |
Family
ID=12181469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2600183A Pending JPS59151436A (en) | 1983-02-17 | 1983-02-17 | Resin sealing process of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59151436A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5431854A (en) * | 1992-01-23 | 1995-07-11 | "3P" Licensing B.V. | Method for pressing a plastic, which cures by means of a reaction, into a mould cavity, a pressing auxiliary in pill form to be used in this method and a holder composed of such material |
| WO1999005718A3 (en) * | 1997-07-21 | 1999-04-08 | Siemens Ag | Material tablet and method for the production of a plastic composite body |
| CN102324394A (en) * | 2011-09-26 | 2012-01-18 | 铜陵三佳山田科技有限公司 | Continuous filling/packaging module box for DIP (double in-line package) integrated circuits |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53143656A (en) * | 1977-05-20 | 1978-12-14 | Nec Corp | Resin seal-forming of electronic parts |
| JPS5513932A (en) * | 1978-07-18 | 1980-01-31 | Toshiba Corp | Transfer mold for semiconductor device |
| JPS56107559A (en) * | 1980-01-30 | 1981-08-26 | Mitsubishi Electric Corp | Manufacture of resin-sealed semiconductor device |
| JPS5738125A (en) * | 1980-08-20 | 1982-03-02 | Hitachi Ltd | Transfer molding process |
-
1983
- 1983-02-17 JP JP2600183A patent/JPS59151436A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53143656A (en) * | 1977-05-20 | 1978-12-14 | Nec Corp | Resin seal-forming of electronic parts |
| JPS5513932A (en) * | 1978-07-18 | 1980-01-31 | Toshiba Corp | Transfer mold for semiconductor device |
| JPS56107559A (en) * | 1980-01-30 | 1981-08-26 | Mitsubishi Electric Corp | Manufacture of resin-sealed semiconductor device |
| JPS5738125A (en) * | 1980-08-20 | 1982-03-02 | Hitachi Ltd | Transfer molding process |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5431854A (en) * | 1992-01-23 | 1995-07-11 | "3P" Licensing B.V. | Method for pressing a plastic, which cures by means of a reaction, into a mould cavity, a pressing auxiliary in pill form to be used in this method and a holder composed of such material |
| WO1999005718A3 (en) * | 1997-07-21 | 1999-04-08 | Siemens Ag | Material tablet and method for the production of a plastic composite body |
| CN102324394A (en) * | 2011-09-26 | 2012-01-18 | 铜陵三佳山田科技有限公司 | Continuous filling/packaging module box for DIP (double in-line package) integrated circuits |
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