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JPS5988867A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS5988867A
JPS5988867A JP57198745A JP19874582A JPS5988867A JP S5988867 A JPS5988867 A JP S5988867A JP 57198745 A JP57198745 A JP 57198745A JP 19874582 A JP19874582 A JP 19874582A JP S5988867 A JPS5988867 A JP S5988867A
Authority
JP
Japan
Prior art keywords
polymer
doping
side chain
metal
organometallic polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57198745A
Other languages
Japanese (ja)
Inventor
Akira Nakamura
安田源
Hajime Yasuda
中村晃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Industries Ltd filed Critical Mitsubishi Chemical Industries Ltd
Priority to JP57198745A priority Critical patent/JPS5988867A/en
Publication of JPS5988867A publication Critical patent/JPS5988867A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00Subject matter not provided for in other groups of this subclass

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  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a semiconductor suitable for an electrophotography recording material, a solid-state display, and an optical memory by a method wherein an organometallic polymer which is composed of an organic skeleton in the main chain and has a side chain containing a metal of the VIII group of the periodic law table via ether or ether radical is doped with a dopant. CONSTITUTION:It is utilized that the use of the specific organometallic polymer having the metal of the VIII group of the periodic law table for the side chain can produce a polymer having a semiconductor easy and excellent in formability. The organometallic polymer used here is a metal such as iron, cobalt, ruthenium, rhodium, and osmium for the side chain. Besides, a metal which forms a complex with the conjugate diene component of the polymer side chain is desired. Next, Cl2, Br2, I2, IBr, etc. is used as the dopant doped thereto. At this time, the polymer is changed into film and powder forms easy for doping, and the doping is performed at a temperature of -10-70 deg.C under vapor or liquid atmosphere.

Description

【発明の詳細な説明】 本発明は、特定の有機金属ポリマーをドーピング剤でド
ープすることによって得られる成形性の良好な半導体に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor with good moldability obtained by doping a specific organometallic polymer with a doping agent.

従来、ポリアセチレン、ポリフェニレン、ポリピロール
等の共役糸ポリマーに五フッ化砒素、五フッ化アンチモ
ン、沃素、臭素等のドーピング剤ヲドーピングさせたポ
リマーが良好な電導性を示しドーピング量を変化させる
と絶縁体から半導体、さらに電導体に々ることか知られ
ている。
Conventionally, polymers made by doping conjugated thread polymers such as polyacetylene, polyphenylene, and polypyrrole with doping agents such as arsenic pentafluoride, antimony pentafluoride, iodine, and bromine have shown good conductivity and can be made into insulators by changing the doping amount. It is known that it can be applied to semiconductors and even conductors.

しかしながら、これらのポリマーは有機溶媒に不溶で、
しかも、加熱によって溶融しないので、その成形は極め
て困難であり用途が制限されていた。
However, these polymers are insoluble in organic solvents;
Moreover, since it does not melt when heated, it is extremely difficult to mold it and its uses are limited.

本発明者等は、成形性が容易で、しかも、良好な半導性
を有するポリマーにつき鋭意検討した結果、側鎖に周期
律表第■族の金属を有する特定の有機金属ポリマーを使
用すれば所期の目的が達成されることを見い出し、本発
明を完成= 3− した。
As a result of intensive research into polymers that are easy to mold and have good semiconductivity, the inventors of the present invention found that if a specific organometallic polymer having a metal from group Ⅰ of the periodic table in the side chain is used, It was discovered that the intended purpose was achieved, and the present invention was completed = 3-.

すなわち、本発明の要旨は、主錯が有(穀骨格からなり
、側鎖に周期律表第vm族の金属を治する有機金属ポリ
マーをドーピング剤でドープすることによって得られる
ことを特徴とする半纏体に存する。
That is, the gist of the present invention is that the main complex is obtained by doping with a doping agent an organometallic polymer that has a main complex (consists of a grain skeleton and that cures metals in group Vm of the periodic table) in the side chain. Exists in a semi-woven form.

以下、本発明の詳細な説明する。The present invention will be explained in detail below.

本発明で使用する有機金属ポリマーは、側鎖に鉄、コバ
ルト、ルテニウム、ロジウム、オスミウム等の周期律表
第■族の金属を有する。妙)かる金属は、ポリマーの側
鎖の共役ジエン成分と錯体を形成しているのが好ましい
The organometallic polymer used in the present invention has a metal from group Ⅰ of the periodic table, such as iron, cobalt, ruthenium, rhodium, and osmium, in its side chain. The metal preferably forms a complex with the conjugated diene component of the side chain of the polymer.

かかる有機金^ポリマーとしては、例えは、次の様なも
のが挙げられる。
Examples of such organic gold polymers include the following.

■ 一般式、  4− (式中、M+は鉄、ルテニウム、オスミウムを示し、R
1は水素原子、メチル基、エチル基を示す。)で表わさ
れる単位を通常7〜700モル%、好捷しくけ、2〜1
0θモル%有する有機金属ポリマー。
■ General formula, 4- (In the formula, M+ represents iron, ruthenium, osmium, R
1 represents a hydrogen atom, a methyl group, or an ethyl group. ), usually 7 to 700 mol%, preferably 2 to 1
An organometallic polymer having 0θ mole %.

■ −散式 (式中 M2はコバルト、ロジウム、イリジウムを示し
、R2は水IA)fA子、メチル基、エチル基を示す。
(2) - Dispersion formula (in the formula, M2 represents cobalt, rhodium, or iridium, and R2 represents water IA) fA atom, methyl group, or ethyl group.

)で表わされる単位を、通常、7〜700モル%、好ま
しくはλ〜10θモル先有する有機金属ポリマー。
), usually 7 to 700 mol %, preferably λ to 10 θ mol.

■ 一般式、 M’(Co)3 (式中、N3は鉄、ルテニウム、オスミウムを示し R
1、R4は水素原子、メチル基、エチル基を示す。)で
表わされる単位を通常5〜700モル%、好ましくは、
10〜/θθモル%有する右後金属ポリマー。
■ General formula, M'(Co)3 (In the formula, N3 represents iron, ruthenium, and osmium. R
1, R4 represents a hydrogen atom, a methyl group, or an ethyl group. ), usually 5 to 700 mol%, preferably,
Right rear metal polymer having 10~/θθ mol %.

かかるポリマーけ、下記一般式で表わされる単位をり!
〜θモル%、好ましくは、りO〜θモル%有してbても
よい。
Such a polymer has a unit represented by the following general formula!
- θ mol %, preferably 0 to θ mol %.

晶6 (式中、R3は水素原子、メチル基、エチル基を示し、
R6はアルキル基を示す。)■ 一般式、 (式中、N4は鉄、ルテニウム、オスミウム、コバルト
、ロジウム、イリジウム等を示し、R5は水素原子、メ
チル基、エチル基を示すDで表わされる単位を通常j−
100モル%、好才しくは、10〜/θθモル%有する
有機金属ポリマー。
Crystal 6 (wherein R3 represents a hydrogen atom, a methyl group, an ethyl group,
R6 represents an alkyl group. )■ General formula, (In the formula, N4 represents iron, ruthenium, osmium, cobalt, rhodium, iridium, etc., and R5 represents a hydrogen atom, methyl group, or ethyl group. The unit represented by D is usually j-
Organometallic polymer having 100 mol %, preferably 10-/θθ mol %.

上述の様な有機金塊ポリマーは、成形性の観点から、通
常、分子量(数平均分子量200〜!θ、Oθ01 好
ましくは、i、oθθ〜j O,0θOの範囲のものが
好ましい。
From the viewpoint of moldability, the organic gold bullion polymer as described above usually has a molecular weight (number average molecular weight of 200 to !θ, Oθ01, preferably i,oθθ to jO,0θO).

 7− pp、(,77〜61ダ(/9rθ)に記載された方法
に従って容易に合成することができる。
It can be easily synthesized according to the method described in 7-pp, (,77-61 da(/9rθ)).

本発明において、前述の有機金属ポリマーをドーピング
するドーピング剤は、公知の朴々のものが使用できる。
In the present invention, any known doping agent can be used to dope the organometallic polymer.

例えば、CJ−2、Br2、■2、よりr 、  As
F、、BFs、  BCl2. 5baz、、PF、、
SbF、。
For example, CJ-2, Br2, ■2, more r, As
F,, BFs, BCl2. 5baz,,PF,,
SbF,.

SO2、SO,、No、、No、  N20. 、  
POF’、、No、SbF6.5b2s、等、好ましく
け、工2、AsF、、PF、、SbF、、No281:
+F、が革げられる。
SO2, SO,, No,, No, N20. ,
POF',,No,SbF6.5b2s,etc.,Preferable work 2,AsF,,PF,,SbF,,No281:
+F, is fired.

ドーピングは、通常の方法に従い、有機金属ポリマーを
ドーピングし易い形状、例えば、フィルム状、シート状
、粉末状、ベレット状等にして、気粕または液相雰囲気
下に一/θ〜20℃。
Doping is carried out in accordance with a conventional method by forming the organometallic polymer into a shape that is easy to dope, such as a film, sheet, powder, pellet, etc., and placing it in a gaseous or liquid phase atmosphere at 1/θ to 20°C.

好ましくは、0〜50℃で行えばよい。Preferably, the temperature may be 0 to 50°C.

ドーパント量は、ポリマーを構成する側鎖に第■族金属
を有する単位当り、0007〜70倍モル、好オしくは
、θ、θ−2〜2倍モル程度が好適である。
The amount of dopant is preferably about 0,007 to 70 times the mole, preferably about θ, θ-2 to 2 times the mole, per unit having a Group I metal in the side chain constituting the polymer.

上述の様なドーピング剤でドーピングされた本発明の有
機金属ポリマーは、良好な生湯性を 8− 示し、且つ、成形性も容易であるので、電子写真記録材
、固体ディスプレイ、光メモリ、端末機器、帯電防止材
、光電変換素子、蓄電池など広い分野への適用が可能で
ある。
The organometallic polymer of the present invention doped with the above-mentioned doping agent exhibits good hot water properties and is easily moldable, so it can be used in electrophotographic recording materials, solid-state displays, optical memories, and terminal devices. It can be applied to a wide range of fields such as antistatic materials, photoelectric conversion elements, and storage batteries.

以下、実施例を挙げて更に本発明を具体的に説明する。EXAMPLES Hereinafter, the present invention will be further specifically explained with reference to Examples.

参考例1 3θ−のシュレンク管にBP、O(C2Hs )2 2
モル%地化メチレン溶液、20−七増化メチレンy、O
mI!lc#解した/、θ4tfの〔/−クーη−3(
,2−ビニロキシエチル)−i、3−ペンタジェン〕ト
リカルボニル鉄を一2θ℃で加えてアルゴン気流下に溶
封した。−一〇℃、/一時間靜論後溶液をメタノールに
流し込むと角合体が黄色粉末として得られた。
Reference example 1 BP, O(C2Hs)2 2 in a 3θ- Schlenk tube
Mol% dichloromethane solution, 20-7 dichloromethane y, O
mI! lc #understood/, θ4tf [/-ku η-3(
, 2-vinyloxyethyl)-i, 3-pentadiene] tricarbonyl iron was added at -2θ° C. and sealed under an argon stream. After standing at -10°C for one hour, the solution was poured into methanol to obtain a yellow powder.

その元素分析値は下記の通シであった。The elemental analysis values were as follows.

参考例− 参考例/にお込て、〔/−ターη−3(コービニロキシ
エチル) −i、3−ペンタジェンシトリカルボニル鉄
の(lに[/−Q’−η−3(2−ビニロキシエチル)
−i、3−ペンタジエンコトリ力ルポニルルテニウムを
使用する?−fかは同様にして黄色の粉末秋の沖合体を
得た。その元素分析値は下Bピの通シであった。
Reference Example − In Reference Example/, [/-terη-3(corbinyloxyethyl)-i,3-pentadienetricarbonyliron(l][/-Q'-η-3(2- vinyloxyethyl)
-Use i,3-pentadiene cotrivalent ruthenium? -f was similarly obtained to obtain a yellow powdered offshore body. The elemental analysis value was lower B pi.

実施例/およびコ 参考例/および参考例−で得られた重合体の粉末を、室
温下に1.蒸気でドープ量が夫々下記一般式(()およ
び(ll)の構成単位1モルに対しo、trモルおよび
、21.23モルとなるようにドーピングした。ドーピ
ング処理により立合体は夫々黒褐色に変化した。
The polymer powder obtained in Examples/and Reference Examples/and Reference Examples was heated in 1. at room temperature. Doping was carried out with steam such that the doping amount was o, tr mol, and 21.23 mol per mol of the structural unit of the following general formulas (() and (ll), respectively.During the doping treatment, the steric solids changed to blackish brown. did.

このドーピング処理した電合体の電渦8度を公知の四端
子法にて測定したところ、下に表/に示す辿りいずれも
半纏性を示した。
When the electric vorticity of this doped electric composite was measured at 8 degrees using a known four-probe method, all of the traces shown in the table below showed semi-coherent properties.

表 / 11一 実施例3 参考例/で得られた1f合体の粉末を室温下にNo2S
bF、のニトロメタン−メタノール溶液でドーピング処
理して前記一般式(1)の構成単位7モルに対しSbF
6が7.70モルドーピングサレタ1合体を鞠だ。実施
例/と同様にして11一度を測定したところg、4 X
 10−’Ω−’1m−’ であり半導性を示すことが
分った。
Table/11-Example 3 The 1f combined powder obtained in Reference Example/ was heated to No2S at room temperature.
SbF was doped with a nitromethane-methanol solution of
6 is 7.70 mole doping saleta 1 combination. When 11 times were measured in the same manner as in Example/, g, 4
It was found that the resistance was 10-'Ω-'1 m-', indicating semiconductivity.

実施例グ 翻考例/で得られた沖合体の粉末を室温下に工、#気で
所定のドープ量になるように処理時間を変化させてドー
ピング処理した。得られた11合体の電導贋は第1図に
示す通シであった。第1図から明らか々ように、工、の
ドープ量の増加によシ′tわ、導度は/θ−9Ω−7’
以下から70−3Ω−1(7)−1に変化し、半導性を
示すことが分った。
The powder of the offshore body obtained in Example 3/Conversion Example/ was heated to room temperature and subjected to doping treatment by varying the treatment time so as to achieve a predetermined doping amount. The electrical conductivity of the obtained 11 combinations was as shown in FIG. As is clear from Fig. 1, as the amount of doping increases, the conductivity becomes /θ-9Ω-7'
From the following, it was found that the value changed to 70-3Ω-1 (7)-1, indicating semiconductivity.

実施例jおよび6 アクリル酸クロライドとフェロセニルメタノールから得
られたフェロセニル基を翁するアクリレートとメタクリ
ル酸メチルとの共重合によ12− って下記一般式(III)および(IV)で表わされる
重合体を得た。これらの電導度はいずれも約/θ″″Ω
−’efn’−’以下で絶縁体であった。
Examples J and 6 By copolymerizing acrylate containing a ferrocenyl group obtained from acrylic acid chloride and ferrocenyl methanol with methyl methacrylate, A polymer was obtained. All of these conductivities are approximately /θ″″Ω
-'efn'-' or less, it was an insulator.

得られた1合体の粉末を室温下KT2蒸気でドープ量が
第■族金属を含む側鎖を有する1合体の構成単位当り夫
々00.2〜.2モルとなるよう産ドーピング処理した
The resulting powder was doped with KT2 vapor at room temperature in a doping amount of 00.2 to 0.2 to 0.2. The doping treatment was carried out so that the concentration was 2 mol.

一般式(m)で表わされるl゛重合体ドープ量θ、、2
〜.2 モルの範囲で約!、り×/θ−7Ω−’cnl
−’の電導度を示し、また、一般式(1■)で表わされ
る1合体はドープ量0.2〜2モルの範1jt4 テ約
/、/×/θ−6Ω−’crn−’の電婢度を示し、い
ずれも半導性を示すことが分った。
1 expressed by the general formula (m), polymer doping amount θ, 2
~. Approximately in the range of 2 moles! , ri×/θ-7Ω-'cnl
-', and one coalescence represented by the general formula (1) has a doping amount of 0.2 to 2 mol. It was found that all of them exhibited semiconductivity.

実施例2および? アクIJル酸−一、グーへキサジエンエステル鉄トリカ
ルボニルとメタクリル酸メチルとの共重合によって下記
一般式(V)および(Vl)で表わされる1合体を得た
。これらの電導塵はいずれも約10−9Ω−1crn−
I以下で絶縁体であった。
Example 2 and? By copolymerizing ac IJ acid-1, guhexadiene ester iron tricarbonyl and methyl methacrylate, one compound represented by the following general formulas (V) and (Vl) was obtained. All of these conductive dusts have a resistance of about 10-9Ω-1 crn-
I or less, it was an insulator.

’1られたポリマーの粉末を室温下、工2蒸気でドープ
量が(V)では工/F61 = L/ 、  (Vl)
では工/Fθ=3.3となるようにドーピング処理した
結果、それぞれ/、?×/θ−5Ω−’crn−’人び
/、ダ×10”Ω−’1?ff+−’の電導塵を示しい
ずれも半導性を示すことがわかった。
If the doped amount of polymer powder is (V) at room temperature with 2 steam, then 1/F61 = L/, (Vl)
So, as a result of doping treatment so that F/Fθ=3.3, respectively/? It was found that conductive dust of x/θ-5Ω-'crn-' was found to be x/θ-5Ω-'crn-', and that both showed semiconductivity.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、実施例ダにおける工、ドープ量と電導塵の関
係を示すグラフである。 出 願 人  三菱化成工業株式会社 代 理 人  弁理士 長谷用  − tlか7名
FIG. 1 is a graph showing the relationship between the doping amount and the conductive dust in Example D. Applicant: Mitsubishi Chemical Industries, Ltd. Agent: Patent attorney: For Hase - TL or 7 people

Claims (1)

【特許請求の範囲】 (1)主鎖が有機骨格かい■、エーテル又はエステル基
を介して周期律表第■族の金属を含む側鎖を有する有機
金属ポリマーをドーピング剤でドープすることによって
得られることを特徴とする半導体。 のである特許請求の範囲第1項記載の半導体。 (3)有機金属ポリマーが、一般式 (式中、Mlは鉄、ルテニウム、オスミウムを示し、R
1は水素原子、メチル基、エチル基を示す。)で表わさ
れる単位を有する特許請求の範囲第1項記載の半導体。 (4)有機金属ポリマーが、一般式 (式中、M2はコバルト、ロジウム、イリジウムを示し
、R2は水素原子、メチル基、エチル基を示す。)で表
わされる単位を有する特許請求の範囲第7項記載の半導
体。 (5)  有機金属ポリマーが、一般式。 M’(Co)。 (式中 M3は鉄、ルテニウム、オスミウムを示し、R
9、R4は水素原子、メチル基、エチル基を示す。)で
表わされる単位全治する特許請求の範囲第7項記載の半
導体。 (6)  有機金用ポリマーが、一般式、(式中、M4
は周ル」律表比)・[U族の金属を示し、R5は水素原
子またはメチル基を示す。)で表わされる単位を有する
特許請求の範囲第1項記載の半導体。
[Scope of Claims] (1) Obtained by doping with a doping agent an organometallic polymer whose main chain has an organic skeleton or a side chain containing a metal from group III of the periodic table via an ether or ester group. A semiconductor characterized by: A semiconductor according to claim 1. (3) The organometallic polymer has the general formula (where Ml represents iron, ruthenium, or osmium, and R
1 represents a hydrogen atom, a methyl group, or an ethyl group. ) The semiconductor according to claim 1, having a unit represented by: (4) The organometallic polymer has a unit represented by the general formula (wherein M2 represents cobalt, rhodium, or iridium, and R2 represents a hydrogen atom, a methyl group, or an ethyl group). Claim 7 Semiconductor described in section. (5) The organometallic polymer has a general formula. M'(Co). (In the formula, M3 represents iron, ruthenium, osmium, and R
9, R4 represents a hydrogen atom, a methyl group, or an ethyl group. ) The semiconductor according to claim 7, which cures the unit completely. (6) The organic gold polymer has the general formula, (wherein, M4
R5 represents a hydrogen atom or a methyl group. ) The semiconductor according to claim 1, having a unit represented by:
JP57198745A 1982-11-12 1982-11-12 Semiconductor Pending JPS5988867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57198745A JPS5988867A (en) 1982-11-12 1982-11-12 Semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57198745A JPS5988867A (en) 1982-11-12 1982-11-12 Semiconductor

Publications (1)

Publication Number Publication Date
JPS5988867A true JPS5988867A (en) 1984-05-22

Family

ID=16396259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57198745A Pending JPS5988867A (en) 1982-11-12 1982-11-12 Semiconductor

Country Status (1)

Country Link
JP (1) JPS5988867A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002212112A (en) * 2001-01-22 2002-07-31 Tanaka Kikinzoku Kogyo Kk Ruthenium compound for chemical vapor deposition and a method for chemical vapor deposition of ruthenium thin films and ruthenium compound thin films.
US9885971B2 (en) * 2015-06-26 2018-02-06 Canon Kabushiki Kaisha Charging member, process cartridge, and electrophotographic image forming apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002212112A (en) * 2001-01-22 2002-07-31 Tanaka Kikinzoku Kogyo Kk Ruthenium compound for chemical vapor deposition and a method for chemical vapor deposition of ruthenium thin films and ruthenium compound thin films.
US9885971B2 (en) * 2015-06-26 2018-02-06 Canon Kabushiki Kaisha Charging member, process cartridge, and electrophotographic image forming apparatus

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