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JPS51107775A - Handotaisochino bisaikakohoho - Google Patents

Handotaisochino bisaikakohoho

Info

Publication number
JPS51107775A
JPS51107775A JP3219575A JP3219575A JPS51107775A JP S51107775 A JPS51107775 A JP S51107775A JP 3219575 A JP3219575 A JP 3219575A JP 3219575 A JP3219575 A JP 3219575A JP S51107775 A JPS51107775 A JP S51107775A
Authority
JP
Japan
Prior art keywords
bisaikakohoho
handotaisochino
handotaisochino bisaikakohoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3219575A
Other languages
Japanese (ja)
Other versions
JPS5851412B2 (en
Inventor
Yoshio Honma
Tadayoshi Harada
Tadao Kachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3219575A priority Critical patent/JPS5851412B2/en
Publication of JPS51107775A publication Critical patent/JPS51107775A/en
Publication of JPS5851412B2 publication Critical patent/JPS5851412B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
JP3219575A 1975-03-19 1975-03-19 Microfabrication method for semiconductor devices Expired JPS5851412B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3219575A JPS5851412B2 (en) 1975-03-19 1975-03-19 Microfabrication method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3219575A JPS5851412B2 (en) 1975-03-19 1975-03-19 Microfabrication method for semiconductor devices

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP18051584A Division JPS6074437A (en) 1984-08-31 1984-08-31 Fine processing of semiconductor device
JP59180514A Division JPS6084820A (en) 1984-08-31 1984-08-31 Method for fine processing

Publications (2)

Publication Number Publication Date
JPS51107775A true JPS51107775A (en) 1976-09-24
JPS5851412B2 JPS5851412B2 (en) 1983-11-16

Family

ID=12352110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3219575A Expired JPS5851412B2 (en) 1975-03-19 1975-03-19 Microfabrication method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5851412B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151338A (en) * 1979-05-16 1980-11-25 Matsushita Electric Ind Co Ltd Fabricating method of semiconductor device
JPS5793526A (en) * 1980-12-03 1982-06-10 Comput Basic Mach Technol Res Assoc Forming method for thin film pattern
JPS57106033A (en) * 1980-12-23 1982-07-01 Fujitsu Ltd Formation of mask
JPS57130430A (en) * 1981-02-06 1982-08-12 Nippon Telegr & Teleph Corp <Ntt> Pattern formation
JPS57143830A (en) * 1981-01-27 1982-09-06 Siemens Ag Method of forming extrafine pattern
JPS57186335A (en) * 1981-05-12 1982-11-16 Nippon Telegr & Teleph Corp <Ntt> Forming method for pattern
JPS583232A (en) * 1981-06-30 1983-01-10 Fujitsu Ltd Pattern formation method
JPS5867028A (en) * 1981-10-19 1983-04-21 Toshiba Corp Manufacturing method of semiconductor device
JPS5888815A (en) * 1981-11-20 1983-05-27 Nec Corp Production of thin film magnetic head
JPS6074437A (en) * 1984-08-31 1985-04-26 Hitachi Ltd Fine processing of semiconductor device
JPS6084820A (en) * 1984-08-31 1985-05-14 Hitachi Ltd Method for fine processing
JPS60167428A (en) * 1984-02-10 1985-08-30 Mitsubishi Electric Corp Fine process
US7671471B2 (en) 2004-04-20 2010-03-02 Intel Corporation Method for making a semiconductor device having a high-k dielectric layer and a metal gate electrode

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188117U (en) * 1986-05-21 1987-11-30
JPH0582012U (en) * 1992-04-10 1993-11-05 ティーディーケイ株式会社 Magnetic shield type surface mount coil device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151338A (en) * 1979-05-16 1980-11-25 Matsushita Electric Ind Co Ltd Fabricating method of semiconductor device
JPS5793526A (en) * 1980-12-03 1982-06-10 Comput Basic Mach Technol Res Assoc Forming method for thin film pattern
JPS57106033A (en) * 1980-12-23 1982-07-01 Fujitsu Ltd Formation of mask
JPS57143830A (en) * 1981-01-27 1982-09-06 Siemens Ag Method of forming extrafine pattern
JPS57130430A (en) * 1981-02-06 1982-08-12 Nippon Telegr & Teleph Corp <Ntt> Pattern formation
JPS57186335A (en) * 1981-05-12 1982-11-16 Nippon Telegr & Teleph Corp <Ntt> Forming method for pattern
JPS583232A (en) * 1981-06-30 1983-01-10 Fujitsu Ltd Pattern formation method
JPS5867028A (en) * 1981-10-19 1983-04-21 Toshiba Corp Manufacturing method of semiconductor device
JPS5888815A (en) * 1981-11-20 1983-05-27 Nec Corp Production of thin film magnetic head
JPS60167428A (en) * 1984-02-10 1985-08-30 Mitsubishi Electric Corp Fine process
JPS6074437A (en) * 1984-08-31 1985-04-26 Hitachi Ltd Fine processing of semiconductor device
JPS6084820A (en) * 1984-08-31 1985-05-14 Hitachi Ltd Method for fine processing
US7671471B2 (en) 2004-04-20 2010-03-02 Intel Corporation Method for making a semiconductor device having a high-k dielectric layer and a metal gate electrode

Also Published As

Publication number Publication date
JPS5851412B2 (en) 1983-11-16

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