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JPS52153686A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS52153686A
JPS52153686A JP7146576A JP7146576A JPS52153686A JP S52153686 A JPS52153686 A JP S52153686A JP 7146576 A JP7146576 A JP 7146576A JP 7146576 A JP7146576 A JP 7146576A JP S52153686 A JPS52153686 A JP S52153686A
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
semiconductor light
region
continuation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7146576A
Other languages
Japanese (ja)
Other versions
JPS543355B2 (en
Inventor
Shinichi Takahashi
Koji Mizusawa
Satoshi Furumiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
Fujitsu Ltd
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical Fujitsu Ltd
Priority to JP7146576A priority Critical patent/JPS52153686A/en
Publication of JPS52153686A publication Critical patent/JPS52153686A/en
Publication of JPS543355B2 publication Critical patent/JPS543355B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To obtain photo oscillation of a single mode by forming the region of a part in the longitudinal direction of a semiconductor active region to stripe form of narrow width and extending a light confinement layer to both side faces thereof in continuation thereto.
COPYRIGHT: (C)1977,JPO&Japio
JP7146576A 1976-06-16 1976-06-16 Semiconductor light emitting device Granted JPS52153686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7146576A JPS52153686A (en) 1976-06-16 1976-06-16 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7146576A JPS52153686A (en) 1976-06-16 1976-06-16 Semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS52153686A true JPS52153686A (en) 1977-12-20
JPS543355B2 JPS543355B2 (en) 1979-02-21

Family

ID=13461356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7146576A Granted JPS52153686A (en) 1976-06-16 1976-06-16 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS52153686A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839086A (en) * 1981-08-31 1983-03-07 Mitsubishi Electric Corp semiconductor laser equipment
JPS603177A (en) * 1983-06-21 1985-01-09 Toshiba Corp semiconductor laser equipment
WO2001095446A1 (en) * 2000-06-08 2001-12-13 Nichia Corporation Semiconductor laser device, and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029283A (en) * 1973-07-19 1975-03-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029283A (en) * 1973-07-19 1975-03-25

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839086A (en) * 1981-08-31 1983-03-07 Mitsubishi Electric Corp semiconductor laser equipment
JPS603177A (en) * 1983-06-21 1985-01-09 Toshiba Corp semiconductor laser equipment
WO2001095446A1 (en) * 2000-06-08 2001-12-13 Nichia Corporation Semiconductor laser device, and method of manufacturing the same
US6925101B2 (en) 2000-06-08 2005-08-02 Nichia Corporation Semiconductor laser device, and method of manufacturing the same
US7470555B2 (en) 2000-06-08 2008-12-30 Nichia Corporation Semiconductor laser device, and method of manufacturing the same
US7709281B2 (en) 2000-06-08 2010-05-04 Nichia Corporation Semiconductor laser device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS543355B2 (en) 1979-02-21

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