[go: up one dir, main page]

JPS5263068A - Formation of electrode of semiconductor device - Google Patents

Formation of electrode of semiconductor device

Info

Publication number
JPS5263068A
JPS5263068A JP13911575A JP13911575A JPS5263068A JP S5263068 A JPS5263068 A JP S5263068A JP 13911575 A JP13911575 A JP 13911575A JP 13911575 A JP13911575 A JP 13911575A JP S5263068 A JPS5263068 A JP S5263068A
Authority
JP
Japan
Prior art keywords
electrode
formation
semiconductor device
layer
alsi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13911575A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Sugawa
Kazuhisa Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13911575A priority Critical patent/JPS5263068A/en
Publication of JPS5263068A publication Critical patent/JPS5263068A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To make an ohmic electrode on an N+ layer by forming a thin Al film electrode on a N+Si, layer, alloying said electrode at 600°C or under, removing Al by leaving the AlSi recrystallization layer and newly providing an Al electrode.
COPYRIGHT: (C)1977,JPO&Japio
JP13911575A 1975-11-19 1975-11-19 Formation of electrode of semiconductor device Pending JPS5263068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13911575A JPS5263068A (en) 1975-11-19 1975-11-19 Formation of electrode of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13911575A JPS5263068A (en) 1975-11-19 1975-11-19 Formation of electrode of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5263068A true JPS5263068A (en) 1977-05-25

Family

ID=15237830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13911575A Pending JPS5263068A (en) 1975-11-19 1975-11-19 Formation of electrode of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5263068A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429985A (en) * 1994-01-18 1995-07-04 Midwest Research Institute Fabrication of optically reflecting ohmic contacts for semiconductor devices
US5897331A (en) * 1996-11-08 1999-04-27 Midwest Research Institute High efficiency low cost thin film silicon solar cell design and method for making
JP2011029608A (en) * 2009-06-23 2011-02-10 Shindengen Electric Mfg Co Ltd Semiconductor device, and method of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429985A (en) * 1994-01-18 1995-07-04 Midwest Research Institute Fabrication of optically reflecting ohmic contacts for semiconductor devices
US5897331A (en) * 1996-11-08 1999-04-27 Midwest Research Institute High efficiency low cost thin film silicon solar cell design and method for making
US6201261B1 (en) 1996-11-08 2001-03-13 Midwest Research Institute High efficiency, low cost, thin film silicon solar cell design and method for making
JP2011029608A (en) * 2009-06-23 2011-02-10 Shindengen Electric Mfg Co Ltd Semiconductor device, and method of manufacturing the same

Similar Documents

Publication Publication Date Title
JPS5380966A (en) Manufacture of electrode fdr semiconductor device
JPS5263068A (en) Formation of electrode of semiconductor device
JPS5247673A (en) Process for production of silicon crystal film
JPS5380985A (en) Semiconductor device
JPS51138394A (en) Semiconductor device
JPS5228868A (en) Semiconductor device
JPS5269275A (en) Transistor
JPS5441673A (en) Semiconductor device and its manufacture
JPS51145267A (en) Manufacture of semiconductor device
JPS53148282A (en) Semiconductor device
JPS5356969A (en) Production of tape for tape carrier
JPS547867A (en) Manufacture for semiconductor device
JPS5269561A (en) Electrode of semiconductor device
JPS5365063A (en) Semiconductor device
JPS51147324A (en) Solvent for electronic wire resist
JPS5335383A (en) Semiconductor device
JPS535580A (en) Field effect type semiconductor device
JPS5354988A (en) Production of semiconductor device
JPS539483A (en) Semiconductor device
JPS52155050A (en) Production of semiconductor device
JPS52139368A (en) Semiconductor device
JPS53135269A (en) Forming method for electrode to semiconductor surface
JPS5289467A (en) Semiconductor device
JPS5361968A (en) Production of semiconductor device
JPS5379461A (en) Semiconductor device and its manufacturing process