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JPS5320777A - Insulated gate field effect transistor - Google Patents

Insulated gate field effect transistor

Info

Publication number
JPS5320777A
JPS5320777A JP9575476A JP9575476A JPS5320777A JP S5320777 A JPS5320777 A JP S5320777A JP 9575476 A JP9575476 A JP 9575476A JP 9575476 A JP9575476 A JP 9575476A JP S5320777 A JPS5320777 A JP S5320777A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
insulated gate
gate field
portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9575476A
Other languages
Japanese (ja)
Other versions
JPS6110990B2 (en
Inventor
Toru Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9575476A priority Critical patent/JPS5320777A/en
Publication of JPS5320777A publication Critical patent/JPS5320777A/en
Publication of JPS6110990B2 publication Critical patent/JPS6110990B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To increase breakdown voltage as a whole and improve the stability at the operating time by dividing gate regions to portions controlling current and a number of portions which maintain drain voltage.
COPYRIGHT: (C)1978,JPO&Japio
JP9575476A 1976-08-10 1976-08-10 Insulated gate field effect transistor Granted JPS5320777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9575476A JPS5320777A (en) 1976-08-10 1976-08-10 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9575476A JPS5320777A (en) 1976-08-10 1976-08-10 Insulated gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS5320777A true JPS5320777A (en) 1978-02-25
JPS6110990B2 JPS6110990B2 (en) 1986-04-01

Family

ID=14146277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9575476A Granted JPS5320777A (en) 1976-08-10 1976-08-10 Insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5320777A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6611457B2 (en) 2001-09-18 2003-08-26 Oki Electric Industry Co., Ltd. Read-only nonvolatile memory
US6780710B2 (en) 2000-11-17 2004-08-24 Oki Electric Industry Co., Ltd. Method of manufacturing non-volatile read only memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6780710B2 (en) 2000-11-17 2004-08-24 Oki Electric Industry Co., Ltd. Method of manufacturing non-volatile read only memory
US6955966B2 (en) 2000-11-17 2005-10-18 Oki Electric Industry Co., Ltd. Method of manufacturing non-volatile read only memory
US6611457B2 (en) 2001-09-18 2003-08-26 Oki Electric Industry Co., Ltd. Read-only nonvolatile memory

Also Published As

Publication number Publication date
JPS6110990B2 (en) 1986-04-01

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